| Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892) |
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| 04/25/2002 | WO2002033741A1 Method for forming insulation film and method for manufacturing semiconductor device |
| 04/25/2002 | WO2002033144A1 Manifold for gas supply system |
| 04/25/2002 | WO2002033143A1 Vortex based cvd reactor |
| 04/25/2002 | WO2002032659A1 Barrier film and method for production thereof |
| 04/25/2002 | WO2002032588A1 Coating formation by reactive deposition |
| 04/25/2002 | WO2001085612A3 Process for preparing carbon nanotubes |
| 04/25/2002 | WO2001061069A3 Plasma polymerized primers for metal pretreatment |
| 04/25/2002 | US20020049127 Glass, plasma resisting component, component for electromagnetic wave-transparent window and plasma processing apparatus |
| 04/25/2002 | US20020048971 Manufacturing method of semiconductor integrated circuit device |
| 04/25/2002 | US20020048969 Method of forming film, method of manufacturing semiconductor device, and film forming apparatus |
| 04/25/2002 | US20020048963 Plasma enhanced chemical vapor deposition process |
| 04/25/2002 | US20020048949 Method of forming a metal wiring in a semiconductor device |
| 04/25/2002 | US20020048940 Depositing a metal film at a first set of process conditions; and continuing to deposit the metal film at a second set of process conditions that are different from the first set of conditions. |
| 04/25/2002 | US20020048938 Crystal grains of large grain sizes can be formed by using a gas containing hydrogen and a borane, such as diborane, for forming a tungsten film |
| 04/25/2002 | US20020048926 Method for forming a self-aligned copper capping diffusion barrier |
| 04/25/2002 | US20020048911 Selectively depositing polysilicon via chemical vapor deposition on the crystalline region and not the amorphous region of a substrate; conditions include chlorine gas-free and plasma-free |
| 04/25/2002 | US20020048877 Forming a tantalum oxynitride film with a high dielectric constant on a rubidium film, and further forming an upper electrode |
| 04/25/2002 | US20020048876 Method for fabricating capacitor of semiconductor device |
| 04/25/2002 | US20020048638 Field emission from bias-grown diamond thin films in a microwave plasma |
| 04/25/2002 | US20020048635 A first reactant is chemically adsorbed on the terminated substrate by injecting the first reactant into the reaction chamber; a solid thin film is formed through chemical exchange or reaction with a second reactant |
| 04/25/2002 | US20020048634 And chemical vapor deposition; Group IIA or IVB metallates of Group IVA oxides |
| 04/25/2002 | US20020048531 Deposited thin films and their use in detection, attachment, and bio-medical applications |
| 04/25/2002 | US20020047536 Plasma processing apparatus |
| 04/25/2002 | US20020047203 Semiconductor device having fluorine-added carbon dielectric film and method of fabricating the same |
| 04/25/2002 | US20020047201 Semiconductor device with rare metal electrode |
| 04/25/2002 | US20020047152 Semiconductor integrated circuit device and process for manufacturing the same |
| 04/25/2002 | US20020047122 Polycrystalline silicon layer, its growth method and semiconductor device |
| 04/25/2002 | US20020047095 Method and device for correcting pattern film on a semiconductor substrate |
| 04/25/2002 | US20020047004 System and method for thermal processing of a semiconductor substrate |
| 04/25/2002 | US20020046989 RF matching network with distributed outputs |
| 04/25/2002 | US20020046941 Anode, evaporation source, electrode as a cathode and a current control unit |
| 04/25/2002 | US20020046810 Processing apparatus |
| 04/25/2002 | US20020046808 Plasma processing apparatus |
| 04/25/2002 | US20020046807 Plasma processing apparatus |
| 04/25/2002 | US20020046775 Gas panel |
| 04/25/2002 | US20020046704 Infra-red transparent thermal reactor cover member |
| 04/25/2002 | US20020046693 Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device |
| 04/25/2002 | DE10046973A1 Manufacture of chemical vapor deposition diamond product, e.g. cutting tool, involves depositing chemical vapor deposition diamond to desired thickness at mold interface, dissolving mold, and mounting remaining diamond in holder |
| 04/25/2002 | CA2425838A1 Coating formation by reactive deposition |
| 04/24/2002 | EP1199743A2 Method of fabricating a stack consisting of a layer of Si3N4 topped by a layer of SiO2 on a semiconductor substrate |
| 04/24/2002 | EP1199380A1 Film forming device |
| 04/24/2002 | EP1199379A1 Low friction coefficient carbon film and method of forming the same |
| 04/24/2002 | EP1199378A1 Method for forming metallic film and apparatus for forming the same |
| 04/24/2002 | EP1199109A1 Method for preparation of metal coatings |
| 04/24/2002 | EP1198612A1 Al2O3 COATED CUTTING TOOL |
| 04/24/2002 | EP1198611A1 Device for treating a container with microwave plasma |
| 04/24/2002 | EP1198610A1 Low-temperature compatible wide-pressure-range plasma flow device |
| 04/24/2002 | EP1198431A1 Process for the production of photocatalytic coatings on substrates |
| 04/24/2002 | EP1198283A1 Effluent gas stream treatment system having utility for oxidation treatment of semiconductor manufacturing effluent gases |
| 04/24/2002 | CN2487743Y Pedestal for coating inner wall of device |
| 04/24/2002 | CN1346453A Method of regulating high temperature gaseous phase process and use of said method |
| 04/24/2002 | CN1346413A Compound gas injection system and methods |
| 04/23/2002 | US6377437 High temperature electrostatic chuck |
| 04/23/2002 | US6376808 Heating apparatus |
| 04/23/2002 | US6376796 Plasma processing system |
| 04/23/2002 | US6376781 Low resistance contacts fabricated in high aspect ratio openings by resputtering |
| 04/23/2002 | US6376692 Zirconium alkoxytris (β-Diketonate), process for manufacturing the same, and liquid composition for formation of PZT film |
| 04/23/2002 | US6376392 Forming silicon oxycarbide; antirefelctive coatings |
| 04/23/2002 | US6376391 Pulsed or tailored bias for filling gaps with low dielectric constant material |
| 04/23/2002 | US6376371 Method of forming a semiconductor device |
| 04/23/2002 | US6376349 Forming dielectric; then amorphous metal; siliciding |
| 04/23/2002 | US6376340 Methods for forming polycrystalline silicon film |
| 04/23/2002 | US6376305 Method of forming DRAM circuitry, DRAM circuitry, method of forming a field emission device, and field emission device |
| 04/23/2002 | US6376299 Capacitor for semiconductor memory device and method of manufacturing the same |
| 04/23/2002 | US6376028 Device and method for treating the inside surface of a plastic container with a narrow opening in a plasma enhanced process |
| 04/23/2002 | US6375860 Controlled potential plasma source |
| 04/23/2002 | US6375811 Flexible, highly durable, transparent optical coatings |
| 04/23/2002 | US6375756 Supplying cleaning gas into heated chamber so that gas is decomposed and activated by hot element to generate activated species that converts deposited film into gaseous substance |
| 04/23/2002 | US6375753 Pumping a bulk amount of processing liquid from the processing liquid delivery line; and applying non-thermal energy to the processing liquid delivery line and thereby desorbing processing liquid from processing liquid delivery line |
| 04/23/2002 | US6375750 Plasma enhanced chemical processing reactor and method |
| 04/23/2002 | US6375749 Susceptorless semiconductor wafer support and reactor system for epitaxial layer growth |
| 04/23/2002 | US6375748 Method and apparatus for preventing edge deposition |
| 04/23/2002 | US6375745 Mobile cellular tumble coater |
| 04/23/2002 | US6375744 Sequential in-situ heating and deposition of halogen-doped silicon oxide |
| 04/23/2002 | US6375743 Method for improved chamber bake-out and cool-down |
| 04/23/2002 | US6374859 Manifold system for enabling a distribution of fluids |
| 04/23/2002 | US6374831 Reactive plasma cleaning process using a plasma formed in an astron fluorine source generator from a flow of pure inert-source gas. after formation of the plasma, a flow of a fluorine source gas is introduced to form radicals |
| 04/23/2002 | US6374770 Apparatus for improving film stability of halogen-doped silicon oxide films |
| 04/23/2002 | US6374512 Method for reducing contamination of a substrate in a substrate processing system |
| 04/23/2002 | US6374508 Apparatus and method for aligning a substrate on a support member |
| 04/23/2002 | CA2214276C Cvd diamond burrs for odontological and related uses |
| 04/18/2002 | WO2002031891A1 Electrode and electron emission applications for n-type doped nanocrystalline materials |
| 04/18/2002 | WO2002031875A2 Dielectric interface films and methods therefor |
| 04/18/2002 | WO2002031839A1 N-type doping of nanocrystalline diamond films with nitrogen and electrodes made therefrom |
| 04/18/2002 | WO2002031219A1 Electrostatically clamped edge ring for plasma processing |
| 04/18/2002 | WO2002012585A3 Processing apparatus and cleaning method |
| 04/18/2002 | WO2002007194A3 Cleaning gas for semiconductor production equipment |
| 04/18/2002 | WO2002001608A3 METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES |
| 04/18/2002 | WO2001082958A3 Methods of producing membrane vesicles |
| 04/18/2002 | WO2000074932A9 Deposited thin film void-column network materials |
| 04/18/2002 | US20020045966 Chemical vapor deposition process and apparatus for performing the same |
| 04/18/2002 | US20020045362 Method of forming a silicon nitride layer on a semiconductor wafer |
| 04/18/2002 | US20020045361 Plasma processes for depositing low dielectric constant films |
| 04/18/2002 | US20020045359 Fluorine-containing materials and processes |
| 04/18/2002 | US20020045357 Deliberate semiconductor film variation to compensate for radial processing differences, determine optimal device characteristics, or produce small production runs |
| 04/18/2002 | US20020045322 Method of depositing tungsten nitride using a source gas comprising silicon |
| 04/18/2002 | US20020045146 Batch-type heat treatment apparatus and control method for the batch-type heat treatment apparatus |
| 04/18/2002 | US20020045053 Where the surface has an original chemical composition that varies with depth and at least a portion of the surface is missing from the substrate |
| 04/18/2002 | US20020045009 Method of chemically growing a thin film in a gas phase on a silicon semiconductor substrate |
| 04/18/2002 | US20020043937 Magnetron having a lowered oscillation frequency and processing equipment employing the same |