Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
05/2002
05/09/2002US20020053395 Concentration of the dopant element in the titanium oxide film becomes progressively higher from the surface of the film to the surface of the silicon substrate; film production apparatus; use in making p-n junctions, solar cells
05/09/2002US20020053299 For example, tricarbonyl ((1,2,3,4-pi)-1,3-cyclohexadiene ruthenium, solvent such as hexane, optionally an oxidizer; use in chemical vapor deposition
05/09/2002US20020053191 Method for removing condensable aluminum chloride vapor from aluminum etch effluent
05/08/2002EP1204134A2 RF plasma processor
05/08/2002EP1203834A1 Method for forming multi-phase lead germanate film
05/08/2002EP1203833A2 Organometallic copper complex and preparation of copper thin film by cvd
05/08/2002EP1203441A1 Radio frequency power source for generating an inductively coupled plasma
05/08/2002EP1203394A1 METHOD FOR PREPARING A CsX PHOTOSTIMULABLE PHOSPHOR AND PHOSPHORS THEREFROM
05/08/2002EP1203244A1 Anti-reflection coatings and coated articles
05/08/2002EP1203108A1 Cooled window
05/08/2002EP1202995A1 Group(iii)-metal-hydrides with a guanidino-type ligand
05/08/2002EP1034561B1 Rapid thermal processing (rtp) system with gas driven rotating substrate
05/08/2002DE10150160A1 Verfahren zum Herstellrn einer Metallleitung eines Halbleiterbauteils A method for Herstellrn a metal line of a semiconductor device
05/08/2002DE10055033A1 Device for depositing crystalline layers onto crystalline substrates has a space between a reactor housing wall and a graphite tube filled with a graphite foam notched collar
05/08/2002DE10054653A1 Verfahren und Vorrichtung zum Beschichten von Hohlkörper Method and apparatus for coating hollow body
05/08/2002CN1348552A Semiconductor wafer processing system with vertically-stacked process chambers and single-axis dual-wafer transfer system
05/08/2002CN1348200A Method for producing thin-film, semiconductor thin film and semiconductor device
05/08/2002CN1084443C Rolling bearing with coating layer portion
05/08/2002CN1084236C Coating cutting tip
05/07/2002US6384390 Apparatus for forming thin film using microwave and method therefor
05/07/2002US6383955 Silicone polymer insulation film on semiconductor substrate and method for forming the film
05/07/2002US6383954 Process gas distribution for forming stable fluorine-doped silicate glass and other films
05/07/2002US6383953 Apparatus for fabricating semiconductor device and method for fabricating semiconductor using the same
05/07/2002US6383951 Reacting and depositing methylsilane with hydrogen peroxide to form silicic acid and methylsilanetriol, plasma polymerizing to form polysiloxane and polysilicate, and annealing
05/07/2002US6383949 Tetraethoxysilane (teos); high temperature then low temperature deposition
05/07/2002US6383946 Oxidizing silicon substrate to form silicon dioxide, treating with ammonia to deposit silicon nitride over the substrate and oxide; can deposit different thickness of nitride over substrate and oxide in single step
05/07/2002US6383929 Forming interconnects over silk? polymer interlayer by depositing titanium, titanium nitride, and tantalum or tantalum nitride; nonalloying with copper; eliminates open circuits after heat treatment
05/07/2002US6383915 Depositing titanium and titanium nitride using high density plasma, then depositing aluminum over the surface with a <111> rockwell curve fwhm angle of one degree or less; reduced pitting
05/07/2002US6383897 Apparatus for manufacturing a semiconductor device in a CVD reactive chamber
05/07/2002US6383896 Thin film forming method and thin film forming apparatus
05/07/2002US6383669 Comprising zirconium complexes with a beta-diketonate and alkanol groups; electro-ceramic devices therefrom; use in ferro-electric memories and infra-red detectors; zirconium diisopropoxy bis(tetramethylheptanedioate) for example
05/07/2002US6383642 Transparent substrate provided with hydrophobic/oleophobic coating formed by plasma CVD
05/07/2002US6383576 High frequency generation of plasma to decompose film forming gas; applying self-bias and direct current voltage; controlling incidence of postive ions generated; photovoltaic element with plurality of pin junctions
05/07/2002US6383573 Surface treatment with activated gas comprising noble gas and nitrogen and/or hydrogen; excitation by ultraviolet radiation or plasma discharge; semiconductors, printed circuits
05/07/2002US6383566 Reduction of tungsten- or molybdenum halide or organometallic compound; vapor deposition; glazings, mirrors, emissive screens
05/07/2002US6383555 Misted precursor deposition apparatus and method with improved mist and mist flow
05/07/2002US6383465 Cubic boron nitride and its gas phase synthesis method
05/07/2002US6383334 Method and apparatus for controlling the temperature of a gas distribution plate in a process reactor
05/07/2002US6383333 Protective member for inner surface of chamber and plasma processing apparatus
05/07/2002US6383330 Quartz wafer processing chamber
05/07/2002US6383302 Apparatus and method for manufacturing semiconductor device
05/07/2002US6383300 Heat treatment apparatus and cleaning method of the same
05/07/2002US6383299 Silicon oxide film, method of forming the silicon oxide film, and apparatus for depositing the silicon oxide film
05/07/2002US6383298 Method and apparatus for pressure measurement in a CVI/CVD furnace
05/07/2002US6383288 Method of forming diamond film
05/07/2002US6382951 Al2O3 coated cutting tool
05/07/2002US6382895 Substrate processing apparatus
05/07/2002US6382855 Key sheet and method for manufacturing the same
05/07/2002US6382249 Vacuum exhaust system
05/07/2002US6382129 Semiconductor wafer processor, plasma generating apparatus, magnetic field generator, and method of generating a magnetic field
05/02/2002WO2002035635A1 Apparatus and method for manufacturing thin film electrode of hydrous ruthenium oxide
05/02/2002WO2002035265A2 Using deuterated source gases to fabricate low loss germanium-doped silicon oxy nitride (gestion-sion)
05/02/2002WO2002034960A2 Method for synthesizing diamond
05/02/2002WO2002034669A1 Method and device for electronic cyclotron resonance plasma deposit of single-wall carbon nanotubes and resulting nanotubes
05/02/2002WO2002015649A3 Close coupled match structure for rf drive electrode
05/02/2002WO2001082328A3 Magnetic barrier for plasma in chamber exhaust
05/02/2002WO2001003159A9 Gas distribution apparatus for semiconductor processing
05/02/2002US20020052124 In situ dielectric stacks
05/02/2002US20020052110 Method for forming metal line in a semiconductor device
05/02/2002US20020052109 Method and system for forming copper thin film
05/02/2002US20020052097 Apparatus and method for depositing thin film on wafer using atomic layer deposition
05/02/2002US20020052094 Serial wafer handling mechanism
05/02/2002US20020051887 Coated grooving or parting insert and method of making same
05/02/2002US20020051886 Coated cutting insert
05/02/2002US20020051847 Chemical vapor deposition process for depositing titanium nitride films from an organo-metallic compound
05/02/2002US20020050299 Modular fluid delivery apparatus
05/02/2002EP1202330A2 De-coupled wafer lift and five axis adjustable heater lift system for CVD process chamber
05/02/2002EP1202328A2 Quartz glass wafer support jig and method for producing the same
05/02/2002EP1202321A2 Vaporization of precursors at point of use
05/02/2002EP1201785A1 Method of depositing organosilicate layers
05/02/2002EP1201784A1 Silicon-rich oxide deposition using HDP-CVD
05/02/2002EP1200981A1 Gas distribution apparatus for semiconductor processing
05/02/2002EP1200652A1 Magnesium-doped iii-v nitrides & methods
05/02/2002EP1200639A1 Pyrolytic carbon coating apparatus having feed gas actuator
05/02/2002EP1199991A1 A cutting blade for a surgical instrument
05/02/2002EP1095169B1 Method and device for producing a powder aerosol and use thereof
05/02/2002EP0870072A4 Gas injection system for semiconductor processing
05/02/2002DE10051509A1 Production of a thin layer system comprises introducing power into the plasma in the form of a controlled number of pulses during deposition of extremely thin layers; and adjusting the average power during the pulse-one time
05/02/2002DE10051382A1 Fabrication of stack for emitter windows of bi-complementary metal oxide semiconductor circuits involves depositing silicon nitride and silicon dioxide layers in semiconductor substrate at same temperature and pressure
05/01/2002CN1347566A Method of mfg. semiconductor device and mfg. line thereof
05/01/2002CN1083987C Thermostable polarizers
05/01/2002CN1083865C Plate-like titanium dioxide pigment
04/2002
04/30/2002US6381021 Method and apparatus for measuring reflectivity of deposited films
04/30/2002US6380684 Plasma generating apparatus and semiconductor manufacturing method
04/30/2002US6380612 Thin film formed by inductively coupled plasma
04/30/2002US6380601 Multilayer semiconductor structure with phosphide-passivated germanium substrate
04/30/2002US6380383 Using organoaluminum compounds
04/30/2002US6380081 Method of vaporizing liquid sources and apparatus therefor
04/30/2002US6380080 Methods for preparing ruthenium metal films
04/30/2002US6380013 Method for forming semiconductor device having epitaxial channel layer using laser treatment
04/30/2002US6379873 Method and apparatus for the construction of photosensitive waveguides
04/30/2002US6379798 Hard alloy or cermet surface; aluminum oxide interior layer; colored, decorated exterior layer peeled off by mechanical stress
04/30/2002US6379757 Silicon dioxide deposition by plasma activated evaporation process
04/30/2002US6379756 Plasma treatment method and apparatus
04/30/2002US6379748 Tantalum amide precursors for deposition of tantalum nitride on a substrate
04/30/2002US6379575 Treatment of etching chambers using activated cleaning gas
04/30/2002US6379492 Of magnesium fluoride on the surface of a component part such as heater in a semiconductor processing apparatus; chemical resistance to corrosive fluorine gases
04/30/2002US6379466 Temperature controlled gas distribution plate
04/30/2002US6378600 Thermally conductive chuck with thermally separated sealing structures
04/30/2002US6378378 Wafer to measure pressure at a number of points in a process chamber