Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892) |
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05/09/2002 | US20020053395 Concentration of the dopant element in the titanium oxide film becomes progressively higher from the surface of the film to the surface of the silicon substrate; film production apparatus; use in making p-n junctions, solar cells |
05/09/2002 | US20020053299 For example, tricarbonyl ((1,2,3,4-pi)-1,3-cyclohexadiene ruthenium, solvent such as hexane, optionally an oxidizer; use in chemical vapor deposition |
05/09/2002 | US20020053191 Method for removing condensable aluminum chloride vapor from aluminum etch effluent |
05/08/2002 | EP1204134A2 RF plasma processor |
05/08/2002 | EP1203834A1 Method for forming multi-phase lead germanate film |
05/08/2002 | EP1203833A2 Organometallic copper complex and preparation of copper thin film by cvd |
05/08/2002 | EP1203441A1 Radio frequency power source for generating an inductively coupled plasma |
05/08/2002 | EP1203394A1 METHOD FOR PREPARING A CsX PHOTOSTIMULABLE PHOSPHOR AND PHOSPHORS THEREFROM |
05/08/2002 | EP1203244A1 Anti-reflection coatings and coated articles |
05/08/2002 | EP1203108A1 Cooled window |
05/08/2002 | EP1202995A1 Group(iii)-metal-hydrides with a guanidino-type ligand |
05/08/2002 | EP1034561B1 Rapid thermal processing (rtp) system with gas driven rotating substrate |
05/08/2002 | DE10150160A1 Verfahren zum Herstellrn einer Metallleitung eines Halbleiterbauteils A method for Herstellrn a metal line of a semiconductor device |
05/08/2002 | DE10055033A1 Device for depositing crystalline layers onto crystalline substrates has a space between a reactor housing wall and a graphite tube filled with a graphite foam notched collar |
05/08/2002 | DE10054653A1 Verfahren und Vorrichtung zum Beschichten von Hohlkörper Method and apparatus for coating hollow body |
05/08/2002 | CN1348552A Semiconductor wafer processing system with vertically-stacked process chambers and single-axis dual-wafer transfer system |
05/08/2002 | CN1348200A Method for producing thin-film, semiconductor thin film and semiconductor device |
05/08/2002 | CN1084443C Rolling bearing with coating layer portion |
05/08/2002 | CN1084236C Coating cutting tip |
05/07/2002 | US6384390 Apparatus for forming thin film using microwave and method therefor |
05/07/2002 | US6383955 Silicone polymer insulation film on semiconductor substrate and method for forming the film |
05/07/2002 | US6383954 Process gas distribution for forming stable fluorine-doped silicate glass and other films |
05/07/2002 | US6383953 Apparatus for fabricating semiconductor device and method for fabricating semiconductor using the same |
05/07/2002 | US6383951 Reacting and depositing methylsilane with hydrogen peroxide to form silicic acid and methylsilanetriol, plasma polymerizing to form polysiloxane and polysilicate, and annealing |
05/07/2002 | US6383949 Tetraethoxysilane (teos); high temperature then low temperature deposition |
05/07/2002 | US6383946 Oxidizing silicon substrate to form silicon dioxide, treating with ammonia to deposit silicon nitride over the substrate and oxide; can deposit different thickness of nitride over substrate and oxide in single step |
05/07/2002 | US6383929 Forming interconnects over silk? polymer interlayer by depositing titanium, titanium nitride, and tantalum or tantalum nitride; nonalloying with copper; eliminates open circuits after heat treatment |
05/07/2002 | US6383915 Depositing titanium and titanium nitride using high density plasma, then depositing aluminum over the surface with a <111> rockwell curve fwhm angle of one degree or less; reduced pitting |
05/07/2002 | US6383897 Apparatus for manufacturing a semiconductor device in a CVD reactive chamber |
05/07/2002 | US6383896 Thin film forming method and thin film forming apparatus |
05/07/2002 | US6383669 Comprising zirconium complexes with a beta-diketonate and alkanol groups; electro-ceramic devices therefrom; use in ferro-electric memories and infra-red detectors; zirconium diisopropoxy bis(tetramethylheptanedioate) for example |
05/07/2002 | US6383642 Transparent substrate provided with hydrophobic/oleophobic coating formed by plasma CVD |
05/07/2002 | US6383576 High frequency generation of plasma to decompose film forming gas; applying self-bias and direct current voltage; controlling incidence of postive ions generated; photovoltaic element with plurality of pin junctions |
05/07/2002 | US6383573 Surface treatment with activated gas comprising noble gas and nitrogen and/or hydrogen; excitation by ultraviolet radiation or plasma discharge; semiconductors, printed circuits |
05/07/2002 | US6383566 Reduction of tungsten- or molybdenum halide or organometallic compound; vapor deposition; glazings, mirrors, emissive screens |
05/07/2002 | US6383555 Misted precursor deposition apparatus and method with improved mist and mist flow |
05/07/2002 | US6383465 Cubic boron nitride and its gas phase synthesis method |
05/07/2002 | US6383334 Method and apparatus for controlling the temperature of a gas distribution plate in a process reactor |
05/07/2002 | US6383333 Protective member for inner surface of chamber and plasma processing apparatus |
05/07/2002 | US6383330 Quartz wafer processing chamber |
05/07/2002 | US6383302 Apparatus and method for manufacturing semiconductor device |
05/07/2002 | US6383300 Heat treatment apparatus and cleaning method of the same |
05/07/2002 | US6383299 Silicon oxide film, method of forming the silicon oxide film, and apparatus for depositing the silicon oxide film |
05/07/2002 | US6383298 Method and apparatus for pressure measurement in a CVI/CVD furnace |
05/07/2002 | US6383288 Method of forming diamond film |
05/07/2002 | US6382951 Al2O3 coated cutting tool |
05/07/2002 | US6382895 Substrate processing apparatus |
05/07/2002 | US6382855 Key sheet and method for manufacturing the same |
05/07/2002 | US6382249 Vacuum exhaust system |
05/07/2002 | US6382129 Semiconductor wafer processor, plasma generating apparatus, magnetic field generator, and method of generating a magnetic field |
05/02/2002 | WO2002035635A1 Apparatus and method for manufacturing thin film electrode of hydrous ruthenium oxide |
05/02/2002 | WO2002035265A2 Using deuterated source gases to fabricate low loss germanium-doped silicon oxy nitride (gestion-sion) |
05/02/2002 | WO2002034960A2 Method for synthesizing diamond |
05/02/2002 | WO2002034669A1 Method and device for electronic cyclotron resonance plasma deposit of single-wall carbon nanotubes and resulting nanotubes |
05/02/2002 | WO2002015649A3 Close coupled match structure for rf drive electrode |
05/02/2002 | WO2001082328A3 Magnetic barrier for plasma in chamber exhaust |
05/02/2002 | WO2001003159A9 Gas distribution apparatus for semiconductor processing |
05/02/2002 | US20020052124 In situ dielectric stacks |
05/02/2002 | US20020052110 Method for forming metal line in a semiconductor device |
05/02/2002 | US20020052109 Method and system for forming copper thin film |
05/02/2002 | US20020052097 Apparatus and method for depositing thin film on wafer using atomic layer deposition |
05/02/2002 | US20020052094 Serial wafer handling mechanism |
05/02/2002 | US20020051887 Coated grooving or parting insert and method of making same |
05/02/2002 | US20020051886 Coated cutting insert |
05/02/2002 | US20020051847 Chemical vapor deposition process for depositing titanium nitride films from an organo-metallic compound |
05/02/2002 | US20020050299 Modular fluid delivery apparatus |
05/02/2002 | EP1202330A2 De-coupled wafer lift and five axis adjustable heater lift system for CVD process chamber |
05/02/2002 | EP1202328A2 Quartz glass wafer support jig and method for producing the same |
05/02/2002 | EP1202321A2 Vaporization of precursors at point of use |
05/02/2002 | EP1201785A1 Method of depositing organosilicate layers |
05/02/2002 | EP1201784A1 Silicon-rich oxide deposition using HDP-CVD |
05/02/2002 | EP1200981A1 Gas distribution apparatus for semiconductor processing |
05/02/2002 | EP1200652A1 Magnesium-doped iii-v nitrides & methods |
05/02/2002 | EP1200639A1 Pyrolytic carbon coating apparatus having feed gas actuator |
05/02/2002 | EP1199991A1 A cutting blade for a surgical instrument |
05/02/2002 | EP1095169B1 Method and device for producing a powder aerosol and use thereof |
05/02/2002 | EP0870072A4 Gas injection system for semiconductor processing |
05/02/2002 | DE10051509A1 Production of a thin layer system comprises introducing power into the plasma in the form of a controlled number of pulses during deposition of extremely thin layers; and adjusting the average power during the pulse-one time |
05/02/2002 | DE10051382A1 Fabrication of stack for emitter windows of bi-complementary metal oxide semiconductor circuits involves depositing silicon nitride and silicon dioxide layers in semiconductor substrate at same temperature and pressure |
05/01/2002 | CN1347566A Method of mfg. semiconductor device and mfg. line thereof |
05/01/2002 | CN1083987C Thermostable polarizers |
05/01/2002 | CN1083865C Plate-like titanium dioxide pigment |
04/30/2002 | US6381021 Method and apparatus for measuring reflectivity of deposited films |
04/30/2002 | US6380684 Plasma generating apparatus and semiconductor manufacturing method |
04/30/2002 | US6380612 Thin film formed by inductively coupled plasma |
04/30/2002 | US6380601 Multilayer semiconductor structure with phosphide-passivated germanium substrate |
04/30/2002 | US6380383 Using organoaluminum compounds |
04/30/2002 | US6380081 Method of vaporizing liquid sources and apparatus therefor |
04/30/2002 | US6380080 Methods for preparing ruthenium metal films |
04/30/2002 | US6380013 Method for forming semiconductor device having epitaxial channel layer using laser treatment |
04/30/2002 | US6379873 Method and apparatus for the construction of photosensitive waveguides |
04/30/2002 | US6379798 Hard alloy or cermet surface; aluminum oxide interior layer; colored, decorated exterior layer peeled off by mechanical stress |
04/30/2002 | US6379757 Silicon dioxide deposition by plasma activated evaporation process |
04/30/2002 | US6379756 Plasma treatment method and apparatus |
04/30/2002 | US6379748 Tantalum amide precursors for deposition of tantalum nitride on a substrate |
04/30/2002 | US6379575 Treatment of etching chambers using activated cleaning gas |
04/30/2002 | US6379492 Of magnesium fluoride on the surface of a component part such as heater in a semiconductor processing apparatus; chemical resistance to corrosive fluorine gases |
04/30/2002 | US6379466 Temperature controlled gas distribution plate |
04/30/2002 | US6378600 Thermally conductive chuck with thermally separated sealing structures |
04/30/2002 | US6378378 Wafer to measure pressure at a number of points in a process chamber |