Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
05/2002
05/21/2002US6391749 Selective epitaxial growth method in semiconductor device
05/21/2002US6391727 Method of manufacturing a semiconductor device utilizing a(Al2O3)X-(TiO2)1-X gate dielectric film
05/21/2002US6391690 Thin film semiconductor device and method for producing the same
05/21/2002US6391396 Chemical vapor deposition coating of fibers using microwave application
05/21/2002US6391394 Aluminum substrate fitted on substrate holder, film of non-monocrystalline material containing silicon atoms formed by low pressure chemical deposition, cleaned with water with dissolved co2; holder and has ceramics on inner surface
05/21/2002US6391385 Method of abating of effluents from chemical vapor deposition processes using organometallic source reagents
05/21/2002US6391377 Surface treating; controlling timing of process with freely programmable process controller unit
05/21/2002US6391147 Plasma treatment method and apparatus
05/21/2002US6391146 Erosion resistant gas energizer
05/21/2002US6390020 Dual face shower head magnetron, plasma generating apparatus and method of coating substrate
05/21/2002US6390019 Chamber having improved process monitoring window
05/16/2002WO2002039791A1 Atmospheric plasma method for treating sheet electricity conducting materials and device therefor
05/16/2002WO2002039495A1 Plasma processing device and method of assembling the plasma processing device
05/16/2002WO2002039493A1 Plasma processing device and exhaust ring
05/16/2002WO2002038840A1 Method and device for controlling the surface temperatures of substrates in a chemical vapour deposition reactor
05/16/2002WO2002038839A1 Cvd reactor comprising a substrate holder rotatably mounted and driven by a gas flow
05/16/2002WO2002038838A1 Cvd reactor with graphite-foam insulated, tubular susceptor
05/16/2002WO2002038827A1 Plasma electroplating
05/16/2002WO2002038515A2 Solar management coating system including protective dlc
05/16/2002WO2001082368A3 Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module
05/16/2002US20020058843 Suitable for the deposition of a multicomponent metal oxide thin film containing a group IV metal such as titanium; for example, titanium bis(4-(ethoxy)imino-2-pentanoate)
05/16/2002US20020058415 Rough ruthenium layer or a rough ruthenium oxide layer used in conjunction with non-rough ruthenium and/or non-rough ruthenium oxide layers to form integrated circuits, for example, e.g., bottom electrode of a capacitor.
05/16/2002US20020058414 Methods for forming rough ruthenium-containing layers and structures/methods using same
05/16/2002US20020058398 Few-particle-induced low-pressure teos process
05/16/2002US20020058143 Chemical vapor deposition methods for making powders and coatings, and coatings made using these methods
05/16/2002US20020058115 Process for forming silicon oxide coating on plastic material
05/16/2002US20020058108 Pre-treatment of reactor parts for chemical vapor deposition reactors
05/16/2002US20020058106 Process for preparing a bis (alkylcyclopentadienyl) ruthenium, bis (alkylcyclopentadienyl) ruthenium prepared thereby, and chemical vapor deposition of a ruthenium film or ruthenium-compound film
05/16/2002US20020057999 For surface-treating a running substrate, such as crosslinking an ink or varnish surface using ultraviolet radiation or electron beams
05/16/2002US20020056829 Ruthenium and ruthenium dioxide removal method and material
05/16/2002US20020056814 Method and device for irradiating an ion beam, and related method and device thereof
05/16/2002US20020056701 Etching, shaping, or patterning layer or films with ceric ammonium nitrate in fabrication of semiconductor systems
05/16/2002US20020056697 Ruthenium and ruthenium dioxide removal method and material
05/16/2002US20020056416 With calcium carbonate; papermaking; continuous process
05/16/2002US20020056414 Apparatus for perpendicular-type ultra vacuum chemical vapor deposition
05/16/2002US20020056311 Trap apparatus
05/16/2002DE10056029A1 Controlling surface temperature of substrates supported by carriers on dynamic gas cushions in process chamber of CVD reactor comprises varying gas stream producing gas cushions from average value of optically measured surface temperatures
05/16/2002DE10054146A1 Process for determining distance between heater and distributor head involves measuring capacitance of variable capacitor arranged between heater and distribution head
05/16/2002DE10044841A1 Component used as an electronic or micro-electronic component comprises a substrate, an organic light emitting diode arranged on the substrate, and an encapsulation produced using a thin layer process
05/16/2002CA2424891A1 Atmospheric plasma method for treating sheet electricity conducting materials and device therefor
05/15/2002EP1205989A2 Composite material for anode of lithium secondary battery, and lithium secondary battery
05/15/2002EP1205964A1 Plasma process device, electrode structure thereof, and stage structure
05/15/2002EP1205576A1 Method for producing ceramic and apparatus for producing the same, semiconductor device, and piezoelectric device
05/15/2002EP1205575A1 Method for producing ceramic and apparatus for producing the same, semiconductor device, and piezoelectric device
05/15/2002EP1205574A2 Atomic layer deposition of Ta205 and high-K dielectrics
05/15/2002EP1205573A1 Silicon carbide with high thermal conductivity
05/15/2002EP1205569A2 Coated inserts for rough milling
05/15/2002EP1205223A1 Trap apparatus
05/15/2002EP1204987A1 Chemical vapor deposition of silicon oxide films using alkylsiloxane oligomers with ozone
05/15/2002EP1204824A1 Conveyor for treating hollow bodies comprising an advanced pressure distribution circuit
05/15/2002EP1204783A1 A method of forming a silicon nitride layer on a semiconductor wafer
05/15/2002EP1204782A1 Chemical vapor deposition system and method
05/15/2002EP1204622A1 Silicon nitride components with protective coating
05/15/2002EP1204490A1 Coating method on the inner walls of the reaction tubes in a hydrocarbon pyrolysis reactor
05/15/2002CN1349568A Plasma treatment of thermal CVD tan films from tantalum halide precursors
05/15/2002CN1349567A Device for treating a container with microwave plasma
05/15/2002CN1349566A Apparatus for simultaneous deposition by physical vapor deposition and chemical vapor deposition and method therefor
05/15/2002CN1349565A Method and getter devices for use in deposition of thin layers
05/15/2002CN1349253A Method for mfg. semiconductor device, and said seconductor device
05/15/2002CN1349005A Two-step chemical gas-phase deposition process of preparing large-area superconductive magnesium boride film
05/15/2002CN1349004A Prepn process and product of nano silicon film
05/15/2002CN1084674C Glass coating method and glass coated thereby
05/14/2002US6387817 Plasma confinement shield
05/14/2002US6387816 Method and apparatus for controlling the temperature of a gas distribution plate in a process reactor
05/14/2002US6387805 Copper alloy seed layer for copper metallization
05/14/2002US6387802 Memory capacitor; vapor deposition
05/14/2002US6387749 Method of manufacturing a capacitor in a semiconductor device
05/14/2002US6387527 Article comprising metal-based substrate and foil which comprises at least one bond coating fused to substrate by intervening layer of braze material
05/14/2002US6387502 Diamond-coated hard metal member
05/14/2002US6387445 Tungsten layer forming method and laminate structure of tungsten layer
05/14/2002US6387444 Single substrate processing CVD procedure for depositing a metal film using first and second CVD processes in first and second process chambers
05/14/2002US6387208 Inductive coupling plasma processing apparatus
05/14/2002US6387207 Integration of remote plasma generator with semiconductor processing chamber
05/14/2002US6387185 Processing chamber for atomic layer deposition processes
05/14/2002US6387182 Apparatus and method for processing substrate
05/14/2002US6385977 ESRF chamber cooling system and process
05/10/2002WO2002037548A1 Method and apparatus for forming multicomponent metal oxide thin film
05/10/2002WO2002036851A1 Method and device for treating the surface of electrically insulating substrates
05/10/2002WO2002036850A2 Method and device for coating hollow bodies
05/10/2002WO2002036514A2 Method of ion beam milling a glass substrate prior to depositing a coating system thereon, and corresponding system for carrying out the same
05/10/2002WO2002036513A2 Low-e coating system including protective dlc
05/10/2002WO2002036511A2 Method of depositing dlc inclusive coating system on substrate including step of heating substrate during ion beam deposition of dlc inclusive coating system
05/10/2002WO2002036259A1 Excimer uv photo reactor
05/10/2002WO2002014568A3 Chromium-containing cemented carbide body having a surface zone of binder enrichment
05/10/2002WO2002012972A3 Direct temperature control for a component of a substrate processing chamber
05/10/2002WO2001086034B1 Modified susceptor for use in chemical vapor deposition process
05/10/2002CA2361354A1 Diamond-like coating, method of its plating and dental bur with the said diamond-like coating
05/09/2002US20020055275 Dielectric layer for a semiconductor device and method of producing the same
05/09/2002US20020055274 Method of heat-treating nitride compound semiconductor layer and method of producing semiconductor device
05/09/2002US20020055270 Passivating dielectric layer with activated nitrogen atoms, then forming metal nitride film on the nitrogen passivated dielectric layer
05/09/2002US20020055254 Depositing a ruthenium film with excellent homogeneity and film quality, by reacting a ruthenium precursor and oxygen containing gas, controlling oxygen stoichiometry to prevent formation of the ruthenium oxide film
05/09/2002US20020055242 Solutions of metal-comprising materials, methods of forming metal-comprising layers, methods of storing metal-comprising materials, and methods of forming capacitors
05/09/2002US20020055201 Method and device for manufacturing ceramics, semiconductor device and piezoelectric device
05/09/2002US20020055080 Temperature controlling method, thermal treating apparatus, and method of manufacturing semiconductor device
05/09/2002US20020055001 Chemical vapor deposition method and related material
05/09/2002US20020054962 Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers
05/09/2002US20020054956 Integrated dynamic blending apparatus
05/09/2002US20020054794 Cutting tool
05/09/2002US20020053864 Carbon body, process for producing the carbon body, and electric field emission electron source using the carbon body.
05/09/2002US20020053653 Low dielectric constant film having thermal resistance, process for forming the same, insulation film between semiconductor layer using the same, and semiconductor device