| Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892) |
|---|
| 05/30/2002 | US20020064606 Magnetic recording medium, and manufacturing method for the same |
| 05/30/2002 | US20020064598 Method of depositing a thick titanium nitride film |
| 05/30/2002 | US20020064594 Cleaning mechanism which, before the magnetic film is formed, cleans either one or both of the film-forming face and reverse face of the substrate. |
| 05/30/2002 | US20020063265 Bis(2,2,6,6-tetramethyl-3.5-heptanedionato)lead and germanium tetraethoxide; metal oxide chemical vapor deposition; capacitors; homogeneity of film grain size |
| 05/30/2002 | US20020063084 Apparatus and method for reducing contamination in a wafer transfer chamber |
| 05/30/2002 | US20020063053 Method of producing a thin-film system |
| 05/30/2002 | US20020062846 Method for cleaning tungsten from deposition wall chambers |
| 05/30/2002 | US20020062845 Semiconductor manufacturing system and method for cleaning the same |
| 05/30/2002 | US20020062837 Cleaning method for vapor phase deposition apparatus, and vapor phase deposition apparatus |
| 05/30/2002 | US20020062792 Wafer support device and reactor system for epitaxial layer growth |
| 05/30/2002 | US20020062789 Apparatus and method for multi-layer deposition |
| 05/29/2002 | EP1209728A2 Method of depositing organosilicate layers |
| 05/29/2002 | EP1209726A2 Semiconductor device using a polysilicon thin film and method for fabrication thereof |
| 05/29/2002 | EP1209255A2 Oxide coated cutting tool |
| 05/29/2002 | EP1209254A2 Cutting tool |
| 05/29/2002 | EP1209252A2 Continuous coating apparatus |
| 05/29/2002 | EP1209251A2 Temperature control system for wafer |
| 05/29/2002 | EP1209250A1 Apparatus for cleaning a semiconductor process chamber |
| 05/29/2002 | EP1209249A2 Semiconductor manufacturing system and method for cleaning the same |
| 05/29/2002 | EP1209247A1 CVD aluminiding process for producing a modified platinum aluminide bond coat for improved high temperature performance |
| 05/29/2002 | EP1208002A1 Deposited thin film void-column network materials |
| 05/29/2002 | EP1207911A2 Improved container composition for radiopharmaceutical agents |
| 05/29/2002 | EP1127176B1 Device for producing and processing semiconductor substrates |
| 05/29/2002 | EP0996972B1 Method for targeted production on n-type conductive areas in diamond layers by ion implantation |
| 05/29/2002 | EP0988406B1 Method for making a non-sticking diamond like nanocomposite |
| 05/29/2002 | DE10101548C1 Reaction chamber used for processing a substrate wafer in the semiconductor industry comprises a wafer holder, a convection plate above the holder, a gas distribution plate arranged on one side surface of chamber and a flow plate |
| 05/29/2002 | DE10055182A1 CVD-Reaktor mit von einem Gasstrom drehgelagerten und -angetriebenen Substrathalter CVD reactor with a rotationally supported by a gas stream and substrate holder -angetriebenen |
| 05/29/2002 | CN1351677A PECVD of TaN films from tantalum halide precursors |
| 05/29/2002 | CN1351676A DLC film, DLC-coated plastic container, and method and apparatus for manufacturing DLC-coated plastic container |
| 05/29/2002 | CN1351675A Protective gas shield apparatus |
| 05/29/2002 | CN1351374A Method for forming metal wires in semiconductor device |
| 05/29/2002 | CN1350959A Method and equipment for high-speed gas-phase carbon deposition of braking carbon disk for aircraft |
| 05/28/2002 | US6396387 Thin films resistors |
| 05/28/2002 | US6396094 Oriented rhombohedral composition of PbZr1-xTixO3 thin films for low voltage operation ferroelectric RAM |
| 05/28/2002 | US6395650 Oxidation; applying radiation; reduce concentration of impurities |
| 05/28/2002 | US6395643 Gas manifold for uniform gas distribution and photochemistry |
| 05/28/2002 | US6395347 Vapor spraying |
| 05/28/2002 | US6395344 Method for producing a magnesia based deposit |
| 05/28/2002 | US6395150 High density plasma (hdp) chemical vapor deposition (cvd); gas mixture of silicon-containing and oxygen-containing components and replacing argon with helium so the sidewall sputtering and redeposition effect is greatly reduced |
| 05/28/2002 | US6395128 RF powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition |
| 05/28/2002 | US6395100 Method of improving vacuum quality in semiconductor processing chambers |
| 05/28/2002 | US6395099 Cleaning surfaces of semicanductors with heating |
| 05/28/2002 | US6395093 Self contained, independent, in-vacuum spinner motor |
| 05/28/2002 | US6395092 Apparatus for depositing high deposition rate halogen-doped silicon oxide layer |
| 05/28/2002 | US6395085 Purity silicon wafer for use in advanced semiconductor devices |
| 05/28/2002 | US6394755 Enhanced coating system for turbine airfoil applications |
| 05/28/2002 | US6394138 Manifold system of removable components for distribution of fluids |
| 05/28/2002 | US6394107 Use of fluorinated ketones as wet cleaning agents for vapor reactors and vapor reactor components |
| 05/28/2002 | US6394026 Low contamination high density plasma etch chambers and methods for making the same |
| 05/28/2002 | US6394025 Vacuum film growth apparatus |
| 05/28/2002 | US6394023 Process kit parts and method for using same |
| 05/23/2002 | WO2002041379A1 Method of forming metal wiring and semiconductor manufacturing apparatus for forming metal wiring |
| 05/23/2002 | WO2002041377A1 Cvd thin film manufacturing apparatus |
| 05/23/2002 | WO2002041376A1 Method for cleaning of processing chamber in semiconductor processing apparatus |
| 05/23/2002 | WO2002041355A2 Plasma processing comprising three rotational motions of an article being processed |
| 05/23/2002 | WO2002040742A1 Method and device for atmospheric plasma processing |
| 05/23/2002 | WO2002040741A1 Gas injection device and treatment furnace equipped with same |
| 05/23/2002 | WO2002040740A1 Device for multiple-zone injection of gas in a reactor |
| 05/23/2002 | WO2002040739A1 Device and method for supplying a cvd reactor with a liquid starting material entering into a gaseous phase |
| 05/23/2002 | WO2002040738A2 Installation wherein is performed an operation requiring control of atmosphere inside a chamber |
| 05/23/2002 | WO2002040734A1 A surface coating of a carbide or a nitride |
| 05/23/2002 | WO2002040733A1 Sputtering target producing few particles, backing plate or sputtering apparatus and sputtering method producing few particles |
| 05/23/2002 | WO2002027060A8 Process chamber lid service system |
| 05/23/2002 | WO2002003415A3 Switched uniformity control |
| 05/23/2002 | WO2002002842A3 Low temperature cvd bst deposition |
| 05/23/2002 | WO2001098556A3 Temperature controlled gas feedthrough |
| 05/23/2002 | WO2001096407A3 Apparatus and process for plasma treatment of particulate matter |
| 05/23/2002 | WO2001075188A3 Method of and apparatus for gas injection |
| 05/23/2002 | WO2001046498A3 Chemical vapor deposition reactor and process chamber for said reactor |
| 05/23/2002 | US20020062037 Method of fabricating iridium-based materials and structures on substrates, and iridium source reagents therefor |
| 05/23/2002 | US20020061659 Setting pressure of reactive gases containing ammonia and silane or silicon fluorides or trifluorosilane in a reaction chamber; forming a silicon nitride film on the surface of a pattern |
| 05/23/2002 | US20020061656 RF powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition |
| 05/23/2002 | US20020061655 Method for fabricating a III nitride film |
| 05/23/2002 | US20020061633 Depositing a first component of film on a substrate at a first temperature; depositing a second component of film on substrate at a second temperature higher than first temperature; anealing to form strontium ruthenite |
| 05/23/2002 | US20020061612 Exposing substrate to adherent material to form initiation layer; reacting with reactive materials |
| 05/23/2002 | US20020061605 Apparatus that is able to shorten the time required for purging treatment after performing maintenance |
| 05/23/2002 | US20020060360 Integrated fluid supply apparatus, sealing device used there, and semiconductor manufacturing system using it |
| 05/23/2002 | US20020060319 Crystal thin film and production method therefor |
| 05/23/2002 | US20020059981 Lower electrode design for higher uniformity |
| 05/23/2002 | US20020059905 Thermal flux regulator |
| 05/23/2002 | US20020059904 Surface sealing showerhead for vapor deposition reactor having integrated flow diverters |
| 05/23/2002 | US20020059882 Single crystal tungsten alloy penetrator and method of making |
| 05/23/2002 | DE10057491A1 Process for introducing a liquid starting material brought into gas form into a chemical vapour deposition (CVD) reactor comprises forming an aerosol, vaporizing the heat supply and removing the heat of vaporization |
| 05/23/2002 | DE10057134A1 Process for depositing crystalline layers onto crystalline substrates in a process chamber of a CVD reactor comprises adjusting the kinematic viscosity of the carrier gas mixed |
| 05/23/2002 | DE10056241A1 Low pressure turbine comprises an assembly of stationary guide vanes having a hydrophobic coating with a smooth surface and rotating blades |
| 05/23/2002 | DE10055609A1 Process for coating a substrate surface with amorphous carbon having properties similar to diamond comprises producing a plasma cloud at a distance from the substrate surface, and depositing the carbon ions onto the surface of the substrate |
| 05/23/2002 | CA2435852A1 A method for plasma treatment under the atmospheric pressure and an equipment therefor |
| 05/22/2002 | EP1207546A2 Apparatus and method for plasma-treating of a substrate |
| 05/22/2002 | EP1207217A1 Method of forming an interlayer insulating film |
| 05/22/2002 | EP1207216A1 Coated hard alloy |
| 05/22/2002 | EP1207215A2 A method for fabricating a III-V nitride film and an apparatus for fabricating the same |
| 05/22/2002 | EP1206908A1 Microwave cvd method for deposition of robust barrier coatings |
| 05/22/2002 | EP1206799A1 Method for bottomless deposition of barrier layers in integrated circuit metallization schemes |
| 05/22/2002 | EP1034233B1 Diamond-like carbon coatings on inorganic phosphors |
| 05/22/2002 | CN1350603A Sequential hydride vapor-phase epitaxy |
| 05/22/2002 | CN1350322A Laser machining device irradiating semiconductor layer with laser beam |
| 05/21/2002 | US6392350 Plasma processing method |
| 05/21/2002 | US6391828 Construction with high Tc superconductor material and process for producing the construction |
| 05/21/2002 | US6391803 Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane |
| 05/21/2002 | US6391785 Method for bottomless deposition of barrier layers in integrated circuit metallization schemes |