Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
06/2002
06/11/2002US6403151 Forming an inorganic antireflective coating layer above the first layer by introducing at least two gases at a first preselected ratio into said semiconductor processing tools; silane and nitrous oxide form silicon oxynitride
06/11/2002US6402850 Depositing polysilicon films having improved uniformity and apparatus therefor
06/11/2002US6402849 Process tube having slit type process gas injection portion and hole type waste gas exhaust portion, and apparatus for fabricating semiconductor device
06/11/2002US6402848 Single-substrate-treating apparatus for semiconductor processing system
06/11/2002US6402847 Dry processing apparatus and dry processing method
06/11/2002US6402844 Substrate processing method and substrate processing unit
06/11/2002US6402836 Method for epitaxial growth on a substrate
06/11/2002US6402806 Method for unreacted precursor conversion and effluent removal
06/11/2002US6402479 Apparatus for pumping out transfer chambers for transferring semiconductor equipment
06/11/2002US6402126 Method and apparatus for vaporizing liquid precursors and system for using same
06/11/2002US6401359 Vacuum processing method and apparatus
06/06/2002WO2002045167A2 Thin films for magnetic devices
06/06/2002WO2002045147A2 Method for pretreating dielectric layers to enhance the adhesion of cvd metal layers thereto
06/06/2002WO2002045128A2 Zirconium-doped bst materials and mocvd process for forming same
06/06/2002WO2002044769A1 Silica-based optical device fabrication
06/06/2002WO2002044765A2 Multilayered optical structures
06/06/2002WO2002044445A1 Method for depositing especially, crystalline layers and device for carrying out the method
06/06/2002WO2002044441A2 Method and device for the metered delivery of low volumetric flows
06/06/2002WO2002044437A2 High strength alloys and methods for making same
06/06/2002WO2002044079A1 Method and apparatus for manufacturing ultra fine three-dimensional structure
06/06/2002WO2002027059A3 System and method for controlling movement of a workpiece in a thermal processing system
06/06/2002WO2002023594A3 Apparatus and method for reducing contamination on thermally processed semiconductor substrates
06/06/2002WO2002020881A3 Apparatus and method for cleaning a bell jar in a barrel epitaxial reactor
06/06/2002WO2002005321A3 Method to isolate multi zone heater from atmosphere
06/06/2002WO2001073866A3 Method and apparatus for integrated-battery devices
06/06/2002US20020069025 Heat treatment apparatus, calibration method for temperature measuring system of the apparatus, and heat treatment system
06/06/2002US20020068467 Simultaneously flowing a plurality of reaction gases SiH4, N2, NH3, N2O into a chamber; and turning on a high frequency radio frequency power after some of said simultaneous flowing.
06/06/2002US20020068466 Chemisorbing a first reactant adsorption layer combined with a halogen on a semiconductor substrate; removing the halogen with activated hydrogen gas; chemisorbing a second reactant into the first reactant adsorption layer
06/06/2002US20020068463 Rapid chemical vapor deposition for spherical semiconductor processing
06/06/2002US20020068458 Method for integrated in-situ cleaning and susequent atomic layer deposition within a single processing chamber
06/06/2002US20020068448 Electron emitter substrate comprising emitters having at least a partial covering comprising aluminum nitride; and an electrode collector substrate spaced from the electron emitter substrate.
06/06/2002US20020068427 Single step process for blanket-selective cvd aluminum deposition
06/06/2002US20020068371 Temperature measuring method and apparatus in semiconductor processing apparatus, and semiconductor processing method and apparatus
06/06/2002US20020068201 Providing expitaxially compatible sacrificial template, depositing single crystal aluminum, gallium indium nitride material on template to form composite sacrificial template/nitride article, parting
06/06/2002US20020068178 Formed by varying temperature within reaction chamber while layer of material is formed
06/06/2002US20020068129 MOCVD of SBT using toluene-based solvent system for precursor delivery
06/06/2002US20020068128 Mixing a substance liquid at the room temperature under the atmospheric pressure and a pressurized gas, causing resultant mixture to spout as a gas from a nozzle to generate a cluster which is a lumpy group of atoms or molecules
06/06/2002US20020067917 Vaporizer and apparatus for vaporizing and supplying
06/06/2002US20020066726 Wafer chuck having thermal plate with interleaved heating and cooling elements, interchangeable top surface assemblies and hard coated layer surfaces
06/06/2002US20020066536 Plasma processing apparatus
06/06/2002US20020066535 Exhaust system for treating process gas effluent
06/06/2002US20020066534 Process for fabricating films of uniform properties on semiconductor devices
06/06/2002US20020066532 Corrosion-resistant protective coating for an apparatus and method for processing a substrate
06/06/2002US20020066466 Immersing into an organic solvent, removing, inspecting for visible contaminants and testing for non-visible ones, repeating if necessary
06/06/2002US20020066412 Wafer carrier and semiconductor apparatus for processing a semiconductor substrate
06/06/2002US20020066411 Method and apparatus for improved temperature control in atomic layer deposition
06/06/2002US20020066409 Fiber coating method and reactor
06/06/2002US20020066408 Domed wafer reactor vessel window with reduced stress at atmospheric and above atmospheric pressures
06/06/2002US20020066403 Growing areas using a mask patterned on a substrate surface and growing a nitride in the growing areas, while forming facet structures
06/06/2002DE10151724A1 Verfahren und Vorrichtung zum Korrigieren eines Musterfilms auf einem Halbleitersubstrat Method and apparatus for correcting a pattern film on a semiconductor substrate
06/06/2002DE10058803A1 Schneidwerkzeug zum Zerspanen Cutting tool for machining
06/06/2002CA2427103A1 Multilayered optical structures
06/05/2002EP1211715A2 A method for fabricating a IIIV nitride film
06/05/2002EP1211695A1 Apparatus and methods for protecting a jet pump nozzle assembly and inlet-mixer
06/05/2002EP1211333A2 Vaporizer for CVD apparatus
06/05/2002EP1210468A1 Method and device for cleaning a pvd or cvd reactor and waste-gas lines of the same
06/05/2002EP0889976B1 Apparatus for uniform distribution of plasma
06/05/2002EP0850266B1 Method for obtaining a floor covering and product thus obtained
06/04/2002US6399922 Single-substrate-heat-treating apparatus for semiconductor process system
06/04/2002US6399921 System and method for thermal processing of a semiconductor substrate
06/04/2002US6399772 Vapor deposition
06/04/2002US6399522 Vapor deposition using plasma gases; pretreatment using nitrogen and nitrogen oxide gas flow
06/04/2002US6399514 High temperature silicon surface providing high selectivity in an oxide etch process
06/04/2002US6399510 Bi-directional processing chamber and method for bi-directional processing of semiconductor substrates
06/04/2002US6399491 Method of manufacturing a barrier metal layer using atomic layer deposition
06/04/2002US6399490 Highly conformal titanium nitride deposition process for high aspect ratio structures
06/04/2002US6399489 Barrier layer deposition using HDP-CVD
06/04/2002US6399484 Semiconductor device fabricating method and system for carrying out the same
06/04/2002US6399411 Method for forming non-single-crystal semiconductor thin film, and method for producing photovoltaic device
06/04/2002US6399402 Passivation of ink jet print heads
06/04/2002US6399225 Silicon-and-nitrogen-containing luminescent substance, method for forming the same, and light emitting device using the same
06/04/2002US6399213 Surface treated vacuum material and a vacuum chamber having an interior surface comprising same
06/04/2002US6399208 Vapor deposition thin film zirconium hafnium silicate barriers
06/04/2002US6399177 Deposited thin film void-column network materials
06/04/2002US6399151 For depositing a diamond thick film on a large substrate such as a silicon wafer; direct current plasma assisted chemical vapor deposition; includes holder for fixing the cathode to the chamber and has a cooling line for the cathode
06/04/2002US6398873 Method and apparatus for forming an HSG-Si layer on a wafer
06/04/2002US6398872 Circuit forming apparatus of semiconductor device
06/04/2002US6398846 Gas purifier equipped with dual temperature detector which signals onset of exothermic reaction when high concentrations of impurities are present, inhibits formation of eutectic and shuts down column before breach of vessel
06/04/2002US6397861 Processing chamber with a showerhead and a chuck, such as chemical vapor deposition chambers, is cleaned using an injection of a gaseous cleaning agent positioned below a showerhead having a porous face plate
06/04/2002US6397776 Apparatus for large area chemical vapor deposition using multiple expanding thermal plasma generators
06/04/2002US6397775 Deposited film forming system and process
06/04/2002CA2043987C Process for coating finely divided material with titania and moisture insensitive zinc sulfide luminescent materials made therefrom
05/2002
05/30/2002WO2002043125A2 Ald method to improve surface coverage
05/30/2002WO2002043119A2 An ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device, a method for fabricating the same, and an electronic device containing the same
05/30/2002WO2002043115A2 Surface preparation prior to deposition
05/30/2002WO2002043114A2 Plasma enhanced pulsed layer deposition
05/30/2002WO2002043080A1 Transparent conductive film and its manufacturing method, and photoelectric transducer comprising it
05/30/2002WO2002043079A1 Conductive film, production method therefor, substrate provided with it and photoelectric conversion device
05/30/2002WO2002042515A1 Method of making coated cemented carbide cutting tools
05/30/2002WO2002007194A8 Cleaning gas for semiconductor production equipment
05/30/2002WO2002002843A3 Carbide coated steel articles and method of making them
05/30/2002WO2001073957A3 Battery-operated wireless-communication apparatus and method
05/30/2002WO2001070005A3 Method of forming a low temperature metal bond for use in the transfer of bulk and thin film materials
05/30/2002US20020065427 Organometallic compounds for chemical vapor deposition and their preparing processes, and processes for chemical vapor deposition of precious-metal films and precious-metal compound films
05/30/2002US20020064970 Chemical vapor deposition; reacting a precursor such as metal alkoxide, metal alkoxide containing halogen, metal beta-diketonate, metal oxoacid, metal acetate, or metal alkene with oxidant gas, annealing for densification
05/30/2002US20020064948 Preparation method of bis (alkylcyclopentadienyl) ruthenium
05/30/2002US20020064927 Apparatus for forming strontium-tantalum-oxide thin film and a method thereof
05/30/2002US20020064897 Silica-based optical device fabrication
05/30/2002US20020064658 Carbon film and method of forming the same
05/30/2002US20020064657 Skin-contact portion of the object to be in contact with the human's skin when used is coated with a carbon film that suppresses irritation of the human's skin; used to prevent bedsores and irritation from eyeglasses