Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
06/2002
06/20/2002DE10035177C2 Verfahren zur plasmagestützten Behandlung der Innenfläche eines Hohlkörpers und Verwendung desselben Of the same method for the plasma assisted treatment of the inner surface of a hollow body and using
06/19/2002EP1215710A2 Method and apparatus for vacuum processing, semiconductor device manufacturing method and semiconductor device
06/19/2002EP1215709A2 Vacuum processing method
06/19/2002EP1215308A2 A method for fabricating a III-V nitride film and an apparatus for fabricating the same
06/19/2002EP1215307A2 Unibody crucible
06/19/2002EP1214732A1 Semiconductor processing equipment having radiant heated ceramic liner
06/19/2002EP1214731A1 Improved ladder boat for supporting wafers
06/19/2002EP1214462A1 Method for making a metal part coated with diamond and metal part obtained by said method
06/19/2002EP1214461A2 Corrosion-resistant multilayer coatings
06/19/2002EP1214459A1 Pulsed plasma processing method and apparatus
06/19/2002EP0960219B1 Composite body comprising a hard metal, cermet or ceramic substrate body and method of producing the same
06/19/2002EP0950124A4 Flash evaporator
06/19/2002EP0815283B1 Deposition of diffusion blocking layers within a low pressure plasma chamber
06/19/2002CN1354807A CVD method of integrated Ta and TaN films from tantalum halide precursors
06/19/2002CN1354806A Chemical vapor deposition system and method
06/19/2002CN1354732A Process for production of photocatalytic coatings on substrates
06/19/2002CN1354277A Improved chemical vapor-phase deposition method by uisng graphite heating furnace as hot source
06/19/2002CN1354276A Carbon film and its forming method
06/19/2002CN1354275A Electric arc evaporimeter, method for driving electric arc evaporimeter and ion electro plating equipment
06/19/2002CN1354034A Aqueous vapour isolating oil filter capable of preventing oil from returning for lower-pressure chemical gas-phase precipitation system
06/18/2002US6408254 Procedure and device for calibrating the gas pressure in a process vacuum chamber (receiver)
06/18/2002US6407454 Inter-metal dielectric layer
06/18/2002US6407012 Method of producing silicon oxide film, method of manufacturing semiconductor device, semiconductor device, display and infrared irradiating device
06/18/2002US6407003 Fabrication process of semiconductor device with titanium film
06/18/2002US6406978 Using high density hydrogen plasma
06/18/2002US6406776 Surface functionalized diamond crystals and methods for producing same
06/18/2002US6406760 Diamond film deposition on substrate arrays
06/18/2002US6406759 Remote exposure of workpieces using a recirculated plasma
06/18/2002US6406677 Methods for low and ambient temperature preparation of precursors of compounds of group III metals and group V elements
06/18/2002US6406590 Method and apparatus for surface treatment using plasma
06/18/2002US6406545 Semiconductor workpiece processing apparatus and method
06/18/2002US6406544 Uniform vapor distribution for even polyxylene coating; rotary flow pattern obviates need for baffles lessening amount of polymer wasted; modular design is easily detachable from the pyrolysis unit for loading/unloading, cleaning and maintenance
06/18/2002US6406543 Infra-red transparent thermal reactor cover member
06/18/2002US6406540 Process and apparatus for the growth of nitride materials
06/18/2002US6406224 Coated milling insert
06/13/2002WO2002047445A2 Chemical plasma cathode
06/13/2002WO2002047137A1 Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device
06/13/2002WO2002047120A2 Cooling gas delivery system for a rotatable semiconductor substrate support assembly
06/13/2002WO2002046489A1 Method for integrated in-situ cleaning and subsequent atomic layer deposition within a single processing chamber
06/13/2002WO2002046200A1 Mocvd precursors based on organometalloid ligands
06/13/2002WO2002045871A1 System and method for modulated ion-induced atomic layer deposition (mii-ald)
06/13/2002WO2002045561A2 Surface sealing showerhead for vapor deposition reactor having integrated flow diverters
06/13/2002WO2002029849A3 System, apparatus, and method for processing wafer using single frequency rf power in plasma processing chamber
06/13/2002WO2002027061A3 Process chamber lid
06/13/2002WO2002025695A3 Tunable focus ring for plasma processing
06/13/2002WO2002020420A3 Coated article including a dlc inclusive layer(s) and a layer(s) deposited using siloxyne gas, and corresponding method
06/13/2002WO2002009162A3 Heated substrate support assembly and method
06/13/2002WO2002003455A3 Highly conformal titanium nitride deposition process for high aspect ratio structures
06/13/2002WO2001094448A3 Barrier layer for polymers and containers
06/13/2002US20020072252 Process for production of thin film semiconductor thin film, semiconductor device, process for production of semiconductor thin film, and apparatus for production of semiconductor thin film
06/13/2002US20020072249 Vapor deposition of source gases of silicon and carbon under conditions to increase the growth rate of silicon carbide and reducing the defects; controlling the partial pressures and ratios; semiconductors; thin films; ingots
06/13/2002US20020072248 Chemical vapor deposition of a heated mixture of a silane (SinH2n+2 n=1-3) gas and and fluorocarbon (CmF2m+2 m=1-3) gas; reduced RC delay time in integrated circuits; heat resistance
06/13/2002US20020072244 Photo-assisted remote plasma apparatus and method
06/13/2002US20020072241 Multi-position load lock chamber
06/13/2002US20020072220 1,3-dioxa-2-silacyclohydrocarbons and 1-oxa-2-silacyclo-hydrocarbons siloxane precursors react with the surface and forms a film
06/13/2002US20020072211 Method of manufacturing semiconductor devices
06/13/2002US20020072165 Substrate processing apparatus and semiconductor device manufacturing method
06/13/2002US20020072164 Processing chamber with multi-layer brazed lid
06/13/2002US20020071969 Piezoelectric material having a perovskite crystal structure using a hydrothermal processing; piezoelectric material functions as an ink discharge drive source for an on-demand type of ink jet recording head
06/13/2002US20020071949 Diamond-coated body including interface layer interposed between substrate and diamond coating, and method of manufacturing the same
06/13/2002US20020071914 Manufacture of silica waveguides with minimal absorption
06/13/2002US20020071239 09186692 a semiconductor capacitive device
06/13/2002US20020070194 Process for treating solid surface and substrate surface
06/13/2002US20020070106 Interference layer system
06/13/2002US20020069970 Temperature controlled semiconductor processing chamber liner
06/13/2002US20020069969 Method and apparatus for restricting process fluid flow within a showerhead assembly
06/13/2002US20020069968 Suspended gas distribution manifold for plasma chamber
06/13/2002US20020069966 Scanning plasma reactor
06/13/2002US20020069930 Chemical delivery system having purge system utilizing multiple purge techniques
06/13/2002US20020069828 Chemical plasma cathode
06/13/2002US20020069827 Allows the quality of milk supplied by each animal to be accurately monitored and also allows the health of the udders of the milked animals to be monitored
06/13/2002US20020069826 Continuous feed coater
06/13/2002US20020069825 Low-pressure CVD apparatus and method of manufacturing a thin film
06/13/2002US20020069820 Heater with detachable ceramic top plate
06/13/2002DE10150413A1 Diamantbeschichteter Körper einschliesslich zwischen Substrat und Diamantbeschichtung eingefügter Grenzflächenschicht und Verfahren zu dessen Herstellung A diamond-coated body including an inserted between the substrate and diamond coating interface layer, and process for its preparation
06/13/2002DE10134806A1 Dampfphasenreaktionsvorrichtung mit Diaphragma für variable Stromverteilung Vapor phase reaction apparatus with diaphragm for variable power distribution
06/13/2002DE10130240A1 Depositing semiconductor film on wafer used in production of semiconductor device comprises allowing gas to flow approximately horizontally to surface of wafer
06/13/2002DE10059386A1 Verfahren und Vorrichtung zur dosierten Abgabe kleiner Flüssigkeitsvolumenströme Method and device for metered delivery of low volumetric flows of liquid
06/12/2002EP1213767A2 Nitride compound semiconductor element
06/12/2002EP1213759A1 Method for forming a porous silicon dioxide film
06/12/2002EP1213749A1 Plasma processing apparatus and method of plasma processing
06/12/2002EP1212785A1 Apparatus for forming polymer continuously on the surface of metal by dc plasma polymerization
06/12/2002EP1212476A1 Titanium containing dielectric films and methods of forming same
06/12/2002EP1212475A1 Protective gas shield apparatus
06/12/2002EP1082181B1 Process for the preparation of uv protective coatings by plasma-enhanced deposition
06/12/2002EP0948661B1 Low friction coating
06/12/2002EP0931177B1 Post treated diamond coated body
06/12/2002EP0917596B1 Method of manufacturing a semiconductor device and a device for applying such a method
06/12/2002EP0870075B1 Film or coating deposition and powder formation
06/12/2002CN1353859A Apparatus for improving plasmia distribution and performance in inductively coupled plasma
06/12/2002CN1353445A Method and equipment for radiating ion beam, related method and its equipment
06/11/2002US6404982 High density flash evaporator
06/11/2002US6404134 Plasma processing system
06/11/2002US6404028 Adhesion resistant micromachined structure and coating
06/11/2002US6403925 System and method for thermal processing of a semiconductor substrate
06/11/2002US6403501 Method of controlling FSG deposition rate in an HDP reactor
06/11/2002US6403479 Process for producing semiconductor and apparatus for production
06/11/2002US6403414 Method for producing low carbon/oxygen conductive layers
06/11/2002US6403168 Electronics
06/11/2002US6403156 Method of forming an A1203 film in a semiconductor device