Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
06/2002
06/27/2002US20020081174 Vacuum processing apparatus and a vacuum processing system
06/27/2002US20020079294 Plasma processing apparatus
06/27/2002US20020078894 Bubbler
06/27/2002US20020078893 Plasma enhanced chemical processing reactor and method
06/27/2002US20020078892 Substrate processing device and through-chamber
06/27/2002US20020078886 Silica glass jig for semiconductor industry and method for producing the same
06/27/2002DE10063492A1 Verfahren zum chemisch-mechanischen Polieren von Isolationsschichten nach der STI-Technik bei erhöhten Temperaturen A method for chemical mechanical polishing of insulating layers after the STI technology at elevated temperatures
06/27/2002CA2431017A1 Injector and method for prolonged introduction of reagents into plasma
06/26/2002EP1217682A2 Method of forming thin film of inorganic solid electrolyte
06/26/2002EP1217648A2 Method of manufacturing an interlayer dielectric layer with low dielectric constant
06/26/2002EP1217093A1 Densification of porous substrate by vapor phase chemical infiltration
06/26/2002EP1217091A2 Packages and packaging aids
06/26/2002EP1216109A1 METHOD AND SYSTEM FOR i IN SITU /i CLEANING OF SEMICONDUCTOR MANUFACTURING EQUIPMENT USING COMBINATION CHEMISTRIES
06/26/2002EP1216106A1 Improved apparatus and method for growth of a thin film
06/26/2002EP1171900A4 Large area atmospheric-pressure plasma jet
06/26/2002EP1129233B1 Method for diamond-coating surfaces
06/26/2002CN1355331A Uniform heat-field array method for growing diamond film tubes
06/26/2002CN1355330A Circulating electrons enhanced hot-wire chemical gas-phase deposition process for preparing diamond film
06/26/2002CN1355329A Photo-hot wire chemical gas-phase deposition method for growing large-area diamond film
06/25/2002US6411490 Integrated power modules for plasma processing systems
06/25/2002US6410889 Method and apparatus for reducing contamination in a wafer loadlock of a semiconductor wafer processing system
06/25/2002US6410463 Method for forming film with low dielectric constant on semiconductor substrate
06/25/2002US6410462 Method of making low-K carbon doped silicon oxide
06/25/2002US6410457 Method for improving barrier layer adhesion to HDP-FSG thin films
06/25/2002US6410454 Using hydrogen free radicals generated by heating hydrogen or nonmetal halides using a hot filament in the presence of a free radical catalyst; forming conductor or insulator films
06/25/2002US6410446 Method for gap filling
06/25/2002US6410434 Low pressure chemical vapor deposition of silane and phosphine; reduced defects; uniform sheet resistance
06/25/2002US6410433 Integrated circuits containing copper films
06/25/2002US6410432 Tantalum (ta); tantalum nitride (tanx); chemical vapor deposition simultaneous nitriding and reduction to metal; integrated circuits containing copper film
06/25/2002US6410408 CVD film formation method
06/25/2002US6410400 Method of manufacturing Ta2O5capacitor using Ta2O5thin film as dielectric layer
06/25/2002US6410383 Method of forming conducting diffusion barriers
06/25/2002US6410381 Ru film is deposited by lpcvd, and re-deposited in situ by pecvd amorphous taon film on the lower electrode crystalled using thermal treatment; upper electrode on the crystallized taon film.
06/25/2002US6410346 Method of forming ferroelastic lead germanate thin films
06/25/2002US6410343 C-axis oriented lead germanate film and deposition method
06/25/2002US6410331 Combinatorial screening of inorganic and organometallic materials
06/25/2002US6410172 Articles coated with aluminum nitride by chemical vapor deposition
06/25/2002US6410102 Plasma process method
06/25/2002US6410090 Method and apparatus for forming insitu boron doped polycrystalline and amorphous silicon films
06/25/2002US6410089 Chemical vapor deposition of copper using profiled distribution of showerhead apertures
06/25/2002US6410088 CVI (chemical vapor infiltration) densification of porous structures
06/25/2002US6410087 Deposition of pyrocarbon
06/25/2002US6410086 Electrophoretically depositing green coating; gas phase deposition of second coating; heat resistance
06/25/2002US6409839 Method and apparatus for vapor generation and film deposition
06/25/2002US6409837 Processing system and method for chemical vapor deposition of a metal layer using a liquid precursor
06/25/2002US6409830 Process for preparing a limo2 type heterometallic oxide film
06/25/2002US6409828 Method and apparatus for achieving a desired thickness profile in a flow-flange reactor
06/25/2002US6409503 Heat treatment method and heat treatment apparatus
06/25/2002US6408786 Semiconductor processing equipment having tiled ceramic liner
06/25/2002US6408653 Apparatus and method for manufacturing optical fiber preform by MCVD
06/25/2002CA2366175A1 Method of treatment with a microwave plasma
06/20/2002WO2002049098A1 Processing method and processing apparatus
06/20/2002WO2002049088A1 Sheet type plasma processing device, method of assembling and disassembling electrode for plasma processing device, and exclusive jig for the method
06/20/2002WO2002048434A2 Gallium nitride materials and methods for forming layers thereof
06/20/2002WO2002048429A1 Manufacture of silica waveguides with minimal absorption
06/20/2002WO2002048428A1 Method for forming thin film, article having thin film, optical film, dielectric coated electrode, and plasma discharge processor
06/20/2002WO2002048427A1 Thin film forming method and thin film forming device
06/20/2002WO2002048423A2 Method for coating substrates and mask holder
06/20/2002WO2002048421A1 Method for regenerating container for plasma treatment, member inside container for plasma treatment, method for preparing member inside container for plasma treatment, and apparatus for plasma treatment
06/20/2002WO2002047829A1 Surface modification process
06/20/2002WO2002019390A3 Cleaning of semiconductor process equipment chamber parts using organic solvents
06/20/2002WO2002015239A3 Dispersion plate for flowing vaporized compounds used in chemical vapor deposition of films onto semiconductor surfaces
06/20/2002WO2002005329A3 Chemical vapor deposition of barrier layers
06/20/2002WO2002005308A3 A plasma reactor having a symmetric parallel conductor coil antenna
06/20/2002WO2001080309A3 A method to enhance the adhesion of silicon nitride to low-k fluorinated amorphous carbon using a silicon carbide adhesion promoter layer
06/20/2002WO2001069642A3 Plasma deposition method and system
06/20/2002WO2001063637A3 Method for producing an addressable field-emission cathode and an associated display structure
06/20/2002WO2001061071A3 Condensation coating method
06/20/2002US20020076947 Combined gate cap or digit line and spacer deposition using HDP
06/20/2002US20020076946 Method for forming Ta2O5 dielectric layer
06/20/2002US20020076944 Applying on semiconductor or integrated circuit surface substituted organosilane compound precursor, wherein precursor reacts with and deposits on surface and dielectric film
06/20/2002US20020076939 High density plasma chemical vapor deposition (HDP-CVD) processing of gallium arsenide wafers
06/20/2002US20020076837 Thin films for magnetic device
06/20/2002US20020076562 Oxide/organic polymer multilayer thin films deposited by chemical vapor deposition
06/20/2002US20020076509 Upper face of the substrate held by the substrate holding device and an upper face of the substrate holding device are almost on one plane; prevents vapor deposition gas from leaking, contacting air
06/20/2002US20020076508 Varying conductance out of a process region to control gas flux in an ALD reactor
06/20/2002US20020076507 Process sequence for atomic layer deposition
06/20/2002US20020076506 Plasma enhanced polymer deposition onto fixtures
06/20/2002US20020076493 Method of manufacturing a preform exhibiting a precisely defined refractive index profile by means of a chemical vapour deposition (CVD) technique
06/20/2002US20020076492 Film processing system
06/20/2002US20020076491 Part of the flow of reactive gas admitted into the enclosure is guided to the inside of the volume defined by a concave inside face of the hollow shaped substrate at pressure equilibrium
06/20/2002US20020076490 Variable gas conductance control for a process chamber
06/20/2002US20020076489 Container that holds the liquid starting material, pressure reducing means for depressurizing inside the container, heater for boiling; chemical vapor deposition of aluminum films
06/20/2002US20020076488 Method for forming metallic-based coating
06/20/2002US20020076485 Dissolving metal compounds in solvent, atomizing metal compound solution, introducing atomized solution into film-forming chamber, forming complex oxide thin film
06/20/2002US20020076481 Introducing first gas into chamber for reacting with surface of substrate to form layer on substrate, first gas creating first pressure, detecting change in pressure, supplying second gas in response to detection of change in pressure
06/20/2002US20020076479 Method of monitoring chemical vapor deposition conditions
06/20/2002US20020076367 Plasma processing apparatus
06/20/2002US20020076316 Wafer boat and boat holder
06/20/2002US20020075625 High temperature electrostatic chuck
06/20/2002US20020074582 Semiconductor device and method of manufacturing thereof
06/20/2002US20020074552 Gallium nitride materials and methods
06/20/2002US20020074324 Heat treatment apparatus and controller for heat treatment apparatus and control method for heat treatment apparatus
06/20/2002US20020074309 Integrated low k dielectrics and etch stops
06/20/2002US20020074013 Converting a non-cleaning feed gas to a cleaning gas by heat, microwave, plasma or electric energy activation in a remote location and then delivering it to process chamber for cleaning
06/20/2002US20020073925 Apparatus and method for exposing a substrate to plasma radicals
06/20/2002US20020073924 Gas introduction system for a reactor
06/20/2002US20020073923 Top end of the exhaust pipe is split into two vents, one of which is used for discharging exhaust gas for forming silicon dioxide and silicon nitride films and other, which is used to discharge hydrogen fluoride for pipe cleaning
06/20/2002US20020073922 Can provide high temperature deposition, heating and efficient cleaning, for forming dielectric films having thickness uniformity, good gap fill capability, high density and low moisture
06/20/2002DE10038800A1 Production of combined direct manufacture of highly active electrodes used for fuel cells and electrolysis cells comprises using carbon carrier