| Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892) |
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| 07/04/2002 | US20020086546 Plasma processing system in which wafer is retained by electrostatic chuck, plasma processing method and method of manufacturing semiconductor device |
| 07/04/2002 | US20020086541 Method of forming silicon nitride on a substrate |
| 07/04/2002 | US20020086529 Actively cooled dispenser system for improved resistivity and phase control in metal CVD from organometallic precursors |
| 07/04/2002 | US20020086526 Apparatus and a method for forming an alloy layer over a substrate |
| 07/04/2002 | US20020086508 Focused ion beam metal deposition |
| 07/04/2002 | US20020086504 Method of manufacturing semiconductor devices |
| 07/04/2002 | US20020086501 Diamond coatings on reactor wall and method of manufacturing thereof |
| 07/04/2002 | US20020086486 Method of manufacturing semiconductor device and the semiconductor device |
| 07/04/2002 | US20020086480 Method of manufacturing a capacitor in a semiconductor device |
| 07/04/2002 | US20020086476 Depositing a silicon oxide layer having a low dielectric constant, a high oxide content, and sufficient carbon content to provide barrier properties |
| 07/04/2002 | US20020086211 Composite material for anode of lithium secondary battery, and lithium secondary battery |
| 07/04/2002 | US20020086153 Coated with lightly crosslinked copolymers of vinyl pyrrolidone (VP) and dimethylaminopropyl methacrylamide (DMAPMA) |
| 07/04/2002 | US20020086147 Coated cemented carbide cutting tool member and process for producing the same |
| 07/04/2002 | US20020086111 Chemisorbing monolayers of a hydrazine-based compound and one or more refractory metal compounds on a substrate to form refractory metal nitride layer |
| 07/04/2002 | US20020086110 Method for tungsten chemical vapor deposition on a semiconductor substrate |
| 07/04/2002 | US20020086109 Chemical vapor deposition wherein at least one kind of organic substance including benzene nucleuses is used as a benzene nucleus source so that insulator includes benzene nucleuses |
| 07/04/2002 | US20020086108 Platinum-rhodium stack as an oxygen barrier |
| 07/04/2002 | US20020086106 Apparatus and method for thin film deposition |
| 07/04/2002 | US20020085973 Preparing metal nitride thin film employing amine-adduct single-source precursor |
| 07/04/2002 | US20020085214 Measurement technique for ultra-thin oxides |
| 07/04/2002 | US20020084424 Windows used in thermal processing chambers |
| 07/04/2002 | US20020084352 Flexible nozzle system for gas distribution plate of plasma reaction chamber |
| 07/04/2002 | US20020084257 Intergrated low k dielectrics and etch stops |
| 07/04/2002 | US20020084192 Depositing a phosphorus doped seed layer on a conductive substrate, and then depositing a conductive metal layer on the phosphorus doped seed layer to form a conductive film. |
| 07/04/2002 | US20020084036 Susceptor with internal support |
| 07/04/2002 | US20020084033 Apparatus having platforms positioned for precise centering of semiconductor wafers during processing |
| 07/04/2002 | US20020083959 Method for removing foreign matter, method for forming film, semiconductor device and film forming apparatus |
| 07/04/2002 | US20020083899 Film-forming device with a substrate rotating mechanism |
| 07/04/2002 | US20020083898 Susceptor with bi-metal effect |
| 07/04/2002 | US20020083897 Full glass substrate deposition in plasma enhanced chemical vapor deposition |
| 07/04/2002 | US20020083896 Vacuum deposition apparatus |
| 07/04/2002 | DE10064942A1 Verfahren zum Abscheiden insbesondere kristalliner Schichten A method for depositing in particular crystalline layers |
| 07/04/2002 | DE10064262A1 Coating a high temperature resistant component with a thermal protective layer comprises providing the surface of the component to be coated with a cooling channel opening |
| 07/04/2002 | DE10064096A1 Permanent hydrophilization of contact lenses involves forming a surface coating of diamond-like carbon in a reducing plasma containing a carbon source followed by treatment in oxidizing, oxygen-containing plasma |
| 07/03/2002 | EP1220305A1 CVD process |
| 07/03/2002 | EP1220281A2 Method of treatment with a microwave plasma |
| 07/03/2002 | EP1219725A1 Method for tungsten chemical vapor deposition on a semiconductor substrate |
| 07/03/2002 | EP1219141A1 Multi-zone resistance heater |
| 07/03/2002 | EP1218916A1 Electron beam plasma formation for surface chemistry |
| 07/03/2002 | EP1218689A1 Method and apparatus for in-situ monitoring of plasma etch and deposition processes using a pulsed broadband light source |
| 07/03/2002 | EP1218573A1 Method and device for depositing materials with a large electronic energy gap and high binding energy |
| 07/03/2002 | EP1218558A1 Coated milling insert |
| 07/03/2002 | EP1218557A1 Coated grooving or parting insert |
| 07/03/2002 | EP1218113A2 Nanostructure coatings |
| 07/03/2002 | EP1068032B1 Container with material coating having barrier effect and method and apparatus for making same |
| 07/03/2002 | EP1038047B1 Chemical deposition method using catalyst on surface |
| 07/03/2002 | EP0966552B1 Rotating device for plasma immersion supported treatment of substrates |
| 07/03/2002 | CN1356926A Surface modification of solid supports through thermal decomposition and functionalization of silanes |
| 07/03/2002 | CN1356921A Organic acid scrubber and methods |
| 07/03/2002 | CN1356718A Gasifier and gasifying supply equipment |
| 07/03/2002 | CN1356181A Multi-component container assembly for washing super-punity solvent |
| 07/02/2002 | US6415431 Repair of phase shift materials to enhance adhesion |
| 07/02/2002 | US6414834 Dielectric covered electrostatic chuck |
| 07/02/2002 | US6414338 n-Type diamond and method for producing same |
| 07/02/2002 | US6414276 Method for substrate thermal management |
| 07/02/2002 | US6413887 Method for producing silicon nitride series film |
| 07/02/2002 | US6413886 Filling recesses using high pressure plasma vapor deposition |
| 07/02/2002 | US6413867 Film thickness control using spectral interferometry |
| 07/02/2002 | US6413860 PECVD of Ta films from tanatalum halide precursors |
| 07/02/2002 | US6413853 Method of forming a tungsten plug in a semiconductor device |
| 07/02/2002 | US6413844 Heating; exposure to arsenic doping gases; termination; cooling |
| 07/02/2002 | US6413681 Microwave plasma vapor deposition |
| 07/02/2002 | US6413628 Titanium carbonitride coated cemented carbide and cutting inserts made from the same |
| 07/02/2002 | US6413592 Apparatus for forming a deposited film by plasma chemical vapor deposition |
| 07/02/2002 | US6413583 Oxidizing methylsilanes with water, oxygen, and ozone and curing; forms uniform deposits of silicon oxides containing hydroxyl groups and having low dielectric constants; gap fillers for semiconductor devices |
| 07/02/2002 | US6413582 Method for forming metallic-based coating |
| 07/02/2002 | US6413581 Photocatalytically-activated self-cleaning article and method of making same |
| 07/02/2002 | US6413321 Method and apparatus for reducing particle contamination on wafer backside during CVD process |
| 07/02/2002 | US6413312 P-type nitride iii-v, such as gallium nitride; metal organic chemical vapor deposition using an arylalkyl hydrazine nitrogen source which does not release hydrogen; high carrier concentration; no annealing; light emitting diodes; lasers |
| 07/02/2002 | US6413307 Introducing a vaporizable gold compound, and another metal compound together with reaction gas oxygen and inert gas into first microwave plasma whereby cores covered with gold clusters are formed, tempering the clustered core for color |
| 07/02/2002 | US6412438 Downstream sapphire elbow joint for remote plasma generator |
| 07/02/2002 | US6412437 Plasma enhanced chemical vapor deposition reactor and plasma enhanced chemical vapor deposition process |
| 06/27/2002 | WO2002050875A2 Heating configuration for use in thermal processing chambers |
| 06/27/2002 | WO2002050337A1 Coated cemented carbide cutting tool insert |
| 06/27/2002 | WO2002050335A1 Injector and method for prolonged introduction of reagents into plasma |
| 06/27/2002 | WO2002050334A2 On-site cleaning gas generation for process chamber cleaning |
| 06/27/2002 | WO2002050333A1 Hot wire chemical vapor deposition method and apparatus using graphite hot rods |
| 06/27/2002 | WO2002050204A1 Method for the chemical-mechanical polishing of isolation layers based on sti technology at elevated temperatures |
| 06/27/2002 | WO2002049925A1 Apparatus for manufacturing dlc-film-coated plastic container, method of manufacturing the same, and method for cleaning inner electrode |
| 06/27/2002 | WO2002014569A3 Chromium-containing cemented tungsten carbide body |
| 06/27/2002 | WO2002003474A3 N-type nitride semiconductor laminate and semiconductor device using same |
| 06/27/2002 | WO2001095376A3 Methods for forming rough ruthenium-containing layers and structures/methods using same |
| 06/27/2002 | US20020081864 Dichlorosilane and ammonia gases are deposit on a silicon substrate and exposing the surface to silicon tetrachloride and a nitrogen containing gas for a second layer of thickness |
| 06/27/2002 | US20020081858 Process for manufacturing a semiconductor device |
| 06/27/2002 | US20020081856 Reducing the oxidized interface with a hydrogen containing plasma and introducing second-layer-forming compounds |
| 06/27/2002 | US20020081844 Method of manufacturing a barrier metal layer using atomic layer deposition |
| 06/27/2002 | US20020081811 Forming insulating layers in bipolar transistors by low pressure chemical vapor deposition in a single vacuum sequence of silicon nitride then silicon dioxide using as precursor bistertiarybutylaminosilane |
| 06/27/2002 | US20020081794 Enhanced deposition control in fabricating devices in a semiconductor wafer |
| 06/27/2002 | US20020081778 Thin-film heat sink and method of manufacturing same |
| 06/27/2002 | US20020081759 Method and apparatus for reducing fixed charges in a semiconductor device |
| 06/27/2002 | US20020081441 Deposition of silicon dioxide and other oxide dielectric materials using near room temperature thermal chemical vapor deposition process; good chemical, physical, optical, and electrical properties, food packaging |
| 06/27/2002 | US20020081433 Tungsten, tantalum or titanium carbide exposed to decarburizing and then carburizing atmosphere to create carbide grains on cemented carbide substrate; diamond film formed by chemical vapor deposition |
| 06/27/2002 | US20020081432 A tungsten-cobalt cemented carbide tool with a chemical vapor deposited layered coating of titanium carbonitride followed by alumina and a top layer of titanium nitride; for wet milling grey cast iron |
| 06/27/2002 | US20020081396 Turbomachines and similar apparatus having components formed of silicon nitride ceramic and includes an outer layer formed of an oxide compound, preferably tantalum oxide |
| 06/27/2002 | US20020081395 Magnesium fluoride coating of high density and purity as protective coating against fluorine ion bombardment of aluminum or aluminum nitride substrate used in vapor chemical deposition chamber |
| 06/27/2002 | US20020081394 Depositing aluminum using plasma deposition with organoaluminum as source, repeating to form an aluminum thin film, and further oxidizing using oxygen plasma to form aluminum oxide film thus obtaining aluminum oxide of high |
| 06/27/2002 | US20020081381 Atomic layer deposition of cobalt from cobalt metallorganic compounds |
| 06/27/2002 | US20020081378 Method of ion beam milling a glass substrate prior to depositing a coating system thereon, and corresponding system for carrying out the same |
| 06/27/2002 | US20020081374 Method of epitaxy on a silicon substrate comprising areas heavily doped with arsenic |
| 06/27/2002 | US20020081175 Vacuum processing apparatus and a vacuum processing system |