Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
07/2002
07/17/2002CN1359531A Gas distribution apparatus for semiconductor processing
07/17/2002CN1359310A Effluent gas stream treatment system having utility for oxidation treatment of semiconductor manufacturing effluent gases
07/17/2002CN1359165A Method for forming inorganic solid electrolyte film
07/17/2002CN1359143A Plasma working equipment
07/16/2002US6420740 Lead germanate ferroelectric structure with multi-layered electrode
07/16/2002US6420582 Alkylcyclopentadienyl(cyclopentadienyl)ruthenium for manufacturing a ruthenium film or a ruthenium compound film by chemical vapor deposition
07/16/2002US6420279 Coating thin films of hafnium and zirconium oxide on silicon semiconductors, by purging a chamber of hafnium and zirconium nitrate with nitrogen, then hydrating with water vapor
07/16/2002US6420276 Semiconductor device and semiconductor device manufacturing method
07/16/2002US6420274 Method for conditioning process chambers
07/16/2002US6420179 Combinatorial sythesis of organometallic materials
07/16/2002US6419997 Vacuum deposition
07/16/2002US6419994 Using organometallic compound; electrode and plasma generator surfaces
07/16/2002US6419993 Production process for magnetic recording medium
07/16/2002US6419985 Method for producing insulator film
07/16/2002US6419984 Low pressure chemical vapor deposition with reduced particulate contamination
07/16/2002US6419849 Perovskite crystal structure
07/16/2002US6419752 Structuring device for processing a substrate
07/16/2002US6418960 Ultrasonic enhancement for solvent purge of a liquid delivery system
07/16/2002US6418874 Toroidal plasma source for plasma processing
07/11/2002WO2002054484A2 Metal ion diffusion barrier layers
07/11/2002WO2002054469A1 Substrate heating device and method of purging the device
07/11/2002WO2002054467A2 Semiconductor structure including a monocrystalline conducting layer
07/11/2002WO2002054454A2 Diamond coatings on reactor wall and method of manufacturing thereof
07/11/2002WO2002054453A1 Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof
07/11/2002WO2002053800A2 Windows used in thermal processing chambers
07/11/2002WO2002053799A1 Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof
07/11/2002WO2002053798A1 Method for depositing thin layers on a porous substrate, fuel cell and fuel cell comprising such a thin layer
07/11/2002WO2002053797A1 Fullerene coated component of semiconductor processing equipment
07/11/2002WO2002053794A1 Carbonitride coated component of semiconductor processing equipment and method of manufacturing thereof
07/11/2002WO2002040738A3 Installation wherein is performed an operation requiring control of atmosphere inside a chamber
07/11/2002WO2002012589A3 Barrier layer structure for copper metallization and method of forming the structure
07/11/2002WO2001046999A3 Method and apparatus for supercritical processing of a workpiece
07/11/2002US20020091268 Pyrazolate copper complexes, and MOCVD of copper using same
07/11/2002US20020090835 Methods and materials for depositing films on semiconductor substrates
07/11/2002US20020090834 Method for depositing silicon dioxide on a substrate surface using hexamethyldisiloxane (HMDSO) as a precursor gas
07/11/2002US20020090829 ALD method to improve surface coverage
07/11/2002US20020090818 Apparatus and method for surface finishing a silicon film
07/11/2002US20020090815 Method for forming a deposited film by plasma chemical vapor deposition
07/11/2002US20020090802 Safe arsenic gas phase doping
07/11/2002US20020090521 Silica layers and antireflection film using same
07/11/2002US20020090467 High and low radio frequency power is used to generate the plasma
07/11/2002US20020090455 Plasma generation chamber is divided from a deposition chamber, radicals are extracted plasma generation chamber to the deposition chamber and caused to react with a process gas
07/11/2002US20020090454 Contacting resist with cleaning composition comprising a homogeneous solution of propylene glycol alkyl ether acetate and at least one alcohol having an alkyl group of 2 to 3 carbon atoms
07/11/2002US20020090450 Method for fabricating a precious-metal electrode
07/11/2002US20020090310 Vacuum exhaust apparatuses and vacuum exhaust methods
07/11/2002US20020089677 Apparatus for monitoring intentional or unavoidable layer depositions and method
07/11/2002US20020088707 Method for improving thermal stability of fluorinated amorphous carbon low dielectric constant materials
07/11/2002US20020088547 Plasma treatment method and apparatus
07/11/2002US20020088545 Gas injector comprising block of ceramic material having gas injection holes extending therethrough, and etching apparatus incorporating the same
07/11/2002US20020088508 High strength alloys and methods for making same
07/11/2002US20020088400 Plasma processing apparatus including a plurality of plasma processing units having reduced variation
07/11/2002US20020088399 Processing apparatus and method for processing workpiece
07/11/2002US20020088398 Teos deposition apparatus for semiconductor manufacture processes
07/11/2002US20020088389 High throughput epitaxial growth by chemical vapor deposition
07/11/2002DE10108717C1 Apparatus for removing electric charge from a plastic sheet, paper web or polymer fibers, comprises a plasma generator producing plasma containing charged particles and rollers which feed sheet through the region containing plasma
07/11/2002DE10100328A1 Device for receiving an optical element made from crystalline calcium fluoride comprises an intermediate element arranged between a unit for holding the optical element and the optical element
07/10/2002EP1221711A2 Plasma display panel suitable for high-quality display and production method
07/10/2002EP1221709A2 Plasma display panel suitable for high-quality display and production method
07/10/2002EP1221708A2 Plasma display panel suitable for high-quality display and production method
07/10/2002EP1221583A1 Method of measuring the thickness of an ultra-thin oxide layer
07/10/2002EP1221178A1 Method for depositing nanolaminate thin films on sensitive surfaces
07/10/2002EP1221177A1 Conformal lining layers for damascene metallization
07/10/2002EP1220955A1 Method of coating an article
07/10/2002CN1357550A Organic metal compound for chemical vapor deposition and its prepn and chemical vapor deposition method of noble metal film and noble metal compound film
07/10/2002CN1087221C Method for preserving precision edges using diamond-like nanocomposite film
07/09/2002US6417626 Immersed inductively—coupled plasma source
07/09/2002US6417369 Pyrazolate copper complexes, and MOCVD of copper using same
07/09/2002US6417111 Plasma processing apparatus
07/09/2002US6417079 Discharge electrode, high-frequency plasma generator, method of power feeding, and method of manufacturing semiconductor device
07/09/2002US6417071 Sub-atmospheric pressure thermal chemical vapor deposition (SACVD) trench isolation method with attenuated surface sensitivity
07/09/2002US6417052 Fabrication process for semiconductor device
07/09/2002US6416889 Anti-corrosion ceramic member
07/09/2002US6416870 Corrosion-resistant multilayer coatings
07/09/2002US6416865 Hard carbon film and surface acoustic-wave substrate
07/09/2002US6416824 Placing a porous body in a varying magnetic field flux loop to heat a localized area, creating a thermal gradient, and exposing heated area to decomposable gas to deposit a carbon containing substance in the pores; aircraft brakes
07/09/2002US6416823 Improvement includes a second process gas distributor having a second process gas exit spaced apart from the substrate support, and an oxygen-supplying gas distributor have a third exit spaced above the substrate support
07/09/2002US6416822 Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
07/09/2002US6416816 Diamond-like carbon; antireflectivity
07/09/2002US6416618 Wafer processing apparatus
07/09/2002US6416584 Apparatus for forming a film on a substrate
07/09/2002US6416578 Silicon carbide film and method for manufacturing the same
07/09/2002US6416577 Method for coating inner surfaces of equipment
07/09/2002US6416292 Method for transporting at least one vaporous substance through the wall of a vacuum chamber and into the vacuum chamber and a device for executing and utilizing the method
07/04/2002WO2002052636A2 Method and apparatus for measuring reflectivity of deposited films
07/04/2002WO2002052617A1 Method and device for treating semiconductor substrates
07/04/2002WO2002052069A1 Method for depositing especially crystalline layers
07/04/2002WO2002052062A1 Treating device
07/04/2002WO2002052061A1 Radiation-induced self-terminating protective coatings
07/04/2002WO2002052054A1 Coated cutting tool insert with iron-nickel based binder phase
07/04/2002WO2002051707A1 Production device for dlc film-coated plastic container and production method therefor
07/04/2002WO2002038515A3 Solar management coating system including protective dlc
07/04/2002WO2002036513A3 Low-e coating system including protective dlc
07/04/2002WO2002017359A3 High carrier concentration p-type transparent conducting oxide films
07/04/2002WO2001094657A3 Bearing with amorphous boron carbide coating
07/04/2002WO2001078117A3 Gaseous process for surface preparation
07/04/2002WO2001073864A3 Thin-film battery having ultra-thin electrolyte and associated method
07/04/2002WO2000070658A9 Multi-zone resistive heater
07/04/2002US20020086557 Method and apparatus for depositing a thin film, and semiconductor device having a semiconductor-insulator junction
07/04/2002US20020086554 Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof
07/04/2002US20020086553 Fullerene coated component of semiconductor processing equipment and method of manufacturing thereof