Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
07/2002
07/25/2002US20020098714 Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device
07/25/2002US20020098713 Clustertool system software using plasma immersion ion implantation
07/25/2002US20020098671 Method of forming silicon-germanium film
07/25/2002US20020098627 Surface preparation prior to deposition
07/25/2002US20020098360 Cutting tool coated with diamond
07/25/2002US20020098346 Reacting substrate having a surface-exposed monolayer with a bifunctional reagent that reacts with exposed reactive group, producing coupling layer having exposed reactive group with which reactive group of selected compound can react
07/25/2002US20020098296 Polypropylene (PP) film whose surface is bonded with chains having, as a main skeleton, an -O-Si-O-; made by activating carbon's of PP with plasma treatment, oxidizing in air and reacting with an organic silane compound
07/25/2002US20020098285 Applying a negative bias to a substrate and immersing in a plasma such as from a gas mixture including acetylene and hexafluoroethane
07/25/2002US20020098083 Low-pressure steam turbine
07/25/2002US20020097512 Method for the coating of substrates made of plastic
07/25/2002US20020097295 Method of surface treatment, device of surface treatment, and head for use in ink jet printer
07/25/2002US20020096999 Inductively coupled RF plasma source
07/25/2002US20020096512 Resistive heaters and uses thereof
07/25/2002US20020096495 Apparatus and method for monitoring backflow vapors
07/25/2002US20020096259 Regenerative thermal oxidizer process and so2 scrubbing
07/25/2002US20020096258 Systems and methods for enhancing plasma processing of a semiconductor substrate
07/25/2002US20020096257 RF power delivery for plasma processing using modulated power signal
07/25/2002US20020096194 To allow use of a strong etchant such as nitrogen trifluoride (NF3) gas to clean selected surfaces in rapid thermal processing (RTP) systems; e.g. selectively clean polysilicon deposits
07/25/2002US20020096188 Chemical vapor deposition (CVD); generating active seeds of cleaning gas by applying high-frequency electric power to plasma-generator, feeding the active species into the processing space through holes in the partition plate
07/25/2002US20020096117 Gas processing apparatus for object to be processed
07/25/2002US20020096115 Method for manufacturing semiconductor device
07/25/2002US20020096114 Series chamber for substrate processing
07/25/2002US20020096113 Apparatus and method for the removal of backflow vapors
07/25/2002US20020096107 Method for manufacturing a diamond cylinder array having dents therein
07/25/2002DE10200279A1 Gasinjektor mit einem Keramikmaterialblock mit Gasinjektionslöchern, die sich durch diesen erstrecken, und ein den Gasinjektor enthaltendes Ätzgerät Gas injector with a ceramic block with gas injection holes extending therethrough, and a gas injector containing etcher
07/24/2002EP1225794A1 Matching device and plasma processing apparatus
07/24/2002EP1225194A2 Method of forming a dielectric interlayer film with organosilicon precursors
07/24/2002EP1224964A1 Method and device for processing pfc
07/24/2002EP1185538A4 Copper source reagent compositions, and method of making and using same for microelectronic device structures
07/24/2002EP1153340B1 Method of regulating a high temperature gaseous phase process and use of said method
07/24/2002EP1068633B1 Method and device for specifically manipulating and depositing particles
07/24/2002EP1015658B1 Vapor deposition apparatus
07/24/2002EP0985056B1 Film or coating deposition on a substrate
07/24/2002EP0815284B1 Method and apparatus for plasma deposition on a double-sided substrate
07/24/2002EP0653499B1 Coated cutting tool and method for producing the same
07/24/2002CN1360681A Narrow-band optical interference filter
07/24/2002CN1088258C Crystal wafer temp. on-situ controler for single wafer tool
07/23/2002US6424800 Bubbler
07/23/2002US6423949 Multi-zone resistive heater
07/23/2002US6423654 Method of manufacturing a semiconductor device having silicon oxynitride passavation layer
07/23/2002US6423593 Semiconductor integrated circuit device and process for manufacturing the same
07/23/2002US6423400 Electrostatic chucks formed by lamination of aluminum nitride with high melting metals and an adhesive layer, for coating silicon wafers; corrosion resistance
07/23/2002US6423384 HDP-CVD deposition of low dielectric constant amorphous carbon film
07/23/2002US6423383 Converting reactive carbon compounds into a gas plasma by resonance using microwaves and magnetic fields, then coating amorphous carbon films on substrates
07/23/2002US6423373 Surface treated aluminum nitride and fabricating method thereof
07/23/2002US6423202 Process for making gold salt for use in electroplating
07/23/2002US6423177 Apparatus for performing plasma process on particles
07/23/2002US6422798 Process and arrangement for continuous treatment of objects
07/23/2002US6422172 Plasma processing apparatus and plasma processing method
07/18/2002WO2002056420A2 Fabrication of high current coated high temperature superconducting tapes
07/18/2002WO2002056395A1 System for the conversion of water into non-oxidizing gases and electronic devices containing said systems
07/18/2002WO2002056357A1 Sheet-fed treating device
07/18/2002WO2002056348A2 Method for incorporating silicon into cvd metal films
07/18/2002WO2002056342A2 Copper vias in low-k technology
07/18/2002WO2002056338A2 Device for the plasma-mediated working of surfaces on planar substrates
07/18/2002WO2002055757A1 Liquid distribution unit for dividing a liquid current into a plurality of partial currents
07/18/2002WO2002055756A1 Apparatus for exhaust whie powder elimination in substrate processing
07/18/2002WO2002055246A2 Coated saw blade
07/18/2002WO2002036850A3 Method and device for coating hollow bodies
07/18/2002WO2001082341B1 Thermal processing system and thermal processing method
07/18/2002WO2001079586A9 A process for the purification of organometallic compounds or heteroatomic organic compounds with a catalyst based on iron and manganese supported on zeolites
07/18/2002WO2001078869A9 A process for the purification of organometallic compounds or heteroatomic organic compounds with a palladium-based catalyst
07/18/2002WO2001067087A3 Fluid handling devices with diamond-like films
07/18/2002WO2001006033A9 Method of coating an article
07/18/2002US20020094689 Apparatus and method for depositing thin film on wafer using atomic layer deposition
07/18/2002US20020094686 Semiconductor processing article
07/18/2002US20020094682 Reactor and a susceptorr is coated with an aluminum gallium indium nitride, which is heated to >/= 1000 degress C to generate chemical vapor deposition between a III and a V raw material gases
07/18/2002US20020094681 In-situ monitoring of chemical vapor deposition process by mass spectrometry
07/18/2002US20020094634 Methods of forming an integrated circuit capacitor in which a metal preprocessed layer is formed on an electrode thereof
07/18/2002US20020094600 Substrate processing apparatus and method for manufacturing a semiconductor device employing same
07/18/2002US20020094502 Substrate processing apparatus and method for manufacturing semiconductor device
07/18/2002US20020094425 Process for depositing a tungsten-based and/or molybdenum-based layer on a rigid substrate, and substrate thus coated
07/18/2002US20020094388 Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS) for stress control and coverage applications
07/18/2002US20020094387 Method for improving chemical vapor deposition of titanium
07/18/2002US20020094383 Immersing in solution, generating waves and collecting image data; varying and controlling frequency to remove particles of different sizes
07/18/2002US20020094380 Abatement of effluents from chemical vapor deposition processes using organometallicsource reagents
07/18/2002US20020094379 Cast diamond tools and formation thereof by chemical vapor deposition
07/18/2002US20020094378 Carbonitride coated component of semiconductor processing equipment and method of manufacturing thereof
07/18/2002US20020094371 Methods of forming coatings on gas-dispersion fixtures in chemical-vapor-deposition systems
07/18/2002US20020093286 Organic EL display and method for producing the same
07/18/2002US20020092840 Reaction chamber for processing a substrate wafer, and method for operating the chamber
07/18/2002US20020092826 Low ceiling temperature process for a plasma reactor with heated source of a polymer-hardening precursor material
07/18/2002US20020092617 Single wafer LPCVD apparatus
07/18/2002US20020092616 Apparatus for plasma treatment using capillary electrode discharge plasma shower
07/18/2002US20020092602 Quartz glass wafer support jig and method for producing the same
07/18/2002US20020092564 Flow control of process gas in semiconductor manufacturing
07/18/2002US20020092471 Semiconductor deposition apparatus and shower head
07/18/2002US20020092281 Residual gas removing device and method thereof
07/18/2002US20020092144 Removable lid and floating pivot
07/18/2002DE10164603A1 Production of an iron nitride thin layer used in the production of magnetic heads comprises forming an iron nitride epitaxial layer on a substrate by reacting a vaporized iron
07/18/2002DE10159702A1 Verfahren und Vorrichtung zur Bearbeitung von Halbleitersubstraten Method and apparatus for processing semiconductor substrates
07/17/2002EP1223231A1 Device for holding an optical element made from a cristalline material during a vapor deposition process
07/17/2002EP1222687A2 IMPROVED PECVD AND CVD PROCESSES FOR WNx DEPOSITION
07/17/2002EP1222679A1 Method and apparatus for controlling wafer uniformity using spatially resolved sensors
07/17/2002EP1222316A1 Coated cemented carbide insert
07/17/2002EP1222196A1 Deposition of films using organosilsesquioxane-precursors
07/17/2002EP1222034A1 Method of forming a thin metal layer on an insulating substrate
07/17/2002EP1047506B1 Spinning disk evaporator
07/17/2002EP0963459B1 Wafer support apparatus
07/17/2002EP0824605B1 Diamond coated body and method of its production