Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
08/2002
08/14/2002EP1230307A1 Color shifting carbon-containing interference pigments
08/14/2002EP1229990A1 Auto-switching gas delivery system utilizing sub-atmospheric pressure gas supply vessels
08/14/2002EP0958400A4 Method and apparatus for plasma deposition of a thin film onto the interior surface of a container
08/14/2002DE10104615A1 Verfahren zur Erzeugung einer Funktionsbeschichtung mit einer HF-ICP-Plasmastrahlquelle A method for producing a functional coating with a RF ICP plasma beam source
08/14/2002DE10104611A1 Vorrichtung zur keramikartigen Beschichtung eines Substrates An apparatus for ceramic-like coating a substrate
08/14/2002DE10100670A1 Zuführvorrichtung für eine CVD-Anlage Feeding apparatus for a CVD system
08/14/2002CN1364203A Method and apparatus for chemical vapor deposition of polysilicon
08/14/2002CN1364097A Method and device for processing PFC
08/14/2002CN1363722A Process for preparing ultra-thin silicon nitride film by electron cyclone, resonance, microwave and plasma
08/14/2002CN1363721A Processing method and apparatus for plasma
08/14/2002CN1363720A Chemical gas phase depositation of copper film for organic metal copper complex
08/13/2002US6434327 Rapid thermal heating apparatus and method including an infrared camera to measure substrate temperature
08/13/2002US6433435 Multilayer; dielectric layer with aperture overcoating with barrier layer
08/13/2002US6433434 Apparatus having a titanium alloy layer
08/13/2002US6433314 Direct temperature control for a component of a substrate processing chamber
08/13/2002US6432846 Heat resistance, waterproofing; plasma vapor deposition
08/13/2002US6432839 Film forming method and manufacturing method of semiconductor device
08/13/2002US6432838 Process control; gas supply line, sample manifold, gas analyzing
08/13/2002US6432831 Gas distribution apparatus for semiconductor processing
08/13/2002US6432725 Methods for crystallizing metallic oxide dielectric films at low temperature
08/13/2002US6432564 Applying conformation layer of glass before metallization
08/13/2002US6432537 Diamond-like-carbon coated aramid fibers having improved mechanical properties
08/13/2002US6432521 Forming at low temperature
08/13/2002US6432494 Protective coating by high rate arc plasma deposition
08/13/2002US6432493 Method of carrying out plasma-enhanced chemical vapor deposition
08/13/2002US6432492 HF-Plasma coating chamber or PECVD coating chamber, its use and method of plating CDs using the chamber
08/13/2002US6432479 Method for in-situ, post deposition surface passivation of a chemical vapor deposited film
08/13/2002US6432478 Ceramic heat barrier coating having low thermal conductivity, and process for the deposition of said coating
08/13/2002US6432477 Densification of porous bodies
08/13/2002US6432317 Method to produce masking
08/13/2002US6432259 Plasma reactor cooled ceiling with an array of thermally isolated plasma heated mini-gas distribution plates
08/13/2002US6432255 Method and apparatus for enhancing chamber cleaning
08/13/2002US6432208 Plasma processing apparatus
08/13/2002US6432206 Heating element for use in a hot filament chemical vapor deposition chamber
08/13/2002US6432205 Gas feeding system for chemical vapor deposition reactor and method of controlling the same
08/13/2002US6431115 Plasma treatment method and apparatus
08/13/2002US6431114 Method and apparatus for plasma processing
08/13/2002US6431113 Plasma vacuum substrate treatment process and system
08/08/2002WO2002062115A1 Plasma installation and method for producing a functional coating
08/08/2002WO2002062114A1 Plasma unit and method for generation of a functional coating
08/08/2002WO2002062111A2 Apparatus and method for atmospheric pressure reactive atom plasma processing for surface modification
08/08/2002WO2002061819A2 Method for ultra thin film formation
08/08/2002WO2002061818A1 Sheet type heat treating device and method for processing semiconductors
08/08/2002WO2002061815A1 A method of manufacturing a semiconductor structure comprising clusters and/or nanocrystals of silicon and a semiconductor structure of this kind
08/08/2002WO2002061807A2 Method and system for rotating a semiconductor wafer in processing chambers
08/08/2002WO2002061787A2 Method and apparatus having pin electrode for surface treatment using capillary discharge plasma
08/08/2002WO2002061179A1 Method and apparatus for gas injection system with minimum particulate contamination
08/08/2002WO2002061171A1 Method for the production of a functional coating by means of a high-frequency icp plasma beam source
08/08/2002WO2002061170A1 Purification systems, methods and devices
08/08/2002WO2002061165A1 Device for ceramic-type coating of a substrate
08/08/2002WO2002061163A2 Chemical vapor deposition devices and methods
08/08/2002WO2002060834A1 Joining methode for high-purity ceramic parts
08/08/2002WO2002060828A2 Apparatus and method for atmospheric pressure reactive atom plasma processing for shaping of damage free surfaces
08/08/2002WO2002060509A1 Methods for surface modification
08/08/2002WO2001090441A3 Surface alloyed high temperature alloys
08/08/2002WO2001028917A9 Abatement of effluents from chemical vapor deposition processes using organometallicsource reagents
08/08/2002US20020106909 Silicon nitride film forming method, silicon nitride film forming system and silicon nitride film forming system precleaning method
08/08/2002US20020106896 Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitride
08/08/2002US20020106894 Comprises chiral, nonracemic gamma-lactone tail
08/08/2002US20020106846 Formation of a tantalum-nitride layer
08/08/2002US20020106826 Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
08/08/2002US20020106535 Silicon carbide with high thermal conductivity
08/08/2002US20020106500 Plasma curing process for porous low-k materials
08/08/2002US20020106460 Low dielectric constant fluorocarbonated silicon films for integrated circuits and method of preparation
08/08/2002US20020106459 Method of depositing a thick dielectric film
08/08/2002US20020106456 Forming by vapor deposition thin film made of the inorganic solid electrolyte on base member being heated so that thin film is allowed to have an ionic conductance higher than that of thin film formed on base member without being heated
08/08/2002US20020106452 Material fabrication
08/08/2002US20020106451 Process for producing aluminum oxide films at low temperatures
08/08/2002US20020105084 Low dielectric constant material for integrated circuit fabrication
08/08/2002US20020104832 Plasma processing apparatus and method
08/08/2002US20020104821 Reactive ion etching of silica structures
08/08/2002US20020104619 Method and system for rotating a semiconductor wafer in processing chambers
08/08/2002US20020104617 Method and apparatus for supplying gas used in semiconductor processing
08/08/2002US20020104549 Cleaning the reaction chamber by removing high molecular weight micro-particles; inserting a photoresist coated wafer and introducing a mixture of hydrogen and nitrogen; reacting the gases with photoresist on the dummy
08/08/2002US20020104481 System and method for modulated ion-induced atomic layer deposition (MII-ALD)
08/08/2002US20020104477 Method of growing a polycrystalline silicon layer. method of growing a single crystal silicon layer and catalytic CVD apparatus
08/08/2002US20020104467 Accelerated plasma clean
08/08/2002US20020104206 Substrate processing apparatus
08/08/2002CA2435962A1 Methods for surface modification
08/07/2002EP1229574A2 Silicon-based film, formation method therefor and photovoltaic element
08/07/2002EP1229571A1 Hot plate
08/07/2002EP1229570A1 Hot plate
08/07/2002EP1229356A2 Methods and apparatus for the production of optical filters
08/07/2002EP1229145A1 Method of depositing a thick dielectric film
08/07/2002EP1229068A1 Method and apparatus for modifying the inner surface of containers made of polymeric compound
08/07/2002EP1228522A1 Vacuum circuit for a device for treating a receptacle with low pressure plasma
08/07/2002EP1227999A1 Method for producing a nanotube layer on a substrate
08/07/2002EP1088118B1 Method for applying a lubricating layer on an object and object with an adhesive lubricating layer
08/07/2002CN2504276Y Chemical gas phase deposition appts. for heating prepn. of film by inductively coupled plasma auxiliary tungsten filament
08/07/2002CN1362727A Reinforcing deposition control of manufacturing device in semiconductor wafer
08/07/2002CN1362538A Method for forming copper for chrome-plating of printed circuit board
08/07/2002CN1088911C Production method of semiconductor unit
08/07/2002CN1088765C Plasma treatment apparatus
08/06/2002US6430458 Semi-selective chemical vapor deposition
08/06/2002US6429325 B-diketonatocopper (ii) complex liquid at room temperature
08/06/2002US6429152 Method of forming a thin film on a semiconductor wafer
08/06/2002US6429149 Low temperature LPCVD PSG/BPSG process
08/06/2002US6429139 Serial wafer handling mechanism
08/06/2002US6429127 Fabrication of integrated circuits with ruthenium and/or ruthenium oxide conductive layers; increasing capacitance of lower electrode structure without increasing occupation area of capacitor
08/06/2002US6429126 Reduced fluorine contamination for tungsten CVD