Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
08/2002
08/22/2002US20020115252 Dielectric interface films and methods therefor
08/22/2002US20020114981 Coated cemented carbide cutting tool insert
08/22/2002US20020114949 Process for controlled introduction of defects in elongated nanostructures
08/22/2002US20020114945 Photocatalytically-activated self-cleaning article and method of making same
08/22/2002US20020114898 Installation and method for vacuum treatment or powder production
08/22/2002US20020114897 Intermittently generating plasma; securing at least 10 mu sec as an off time of the plasma generation after the plasma-off period for processing a substrate by controlling generation of plasma
08/22/2002US20020114887 Placing a liquid containing a raw material for the thin film on substrate; vaporizing the raw material for the thin film from the liquid so as to be fed to a part or a plurality of parts of a surface for forming the thin film
08/22/2002US20020114886 Method of tisin deposition using a chemical vapor deposition process
08/22/2002US20020114756 Tailoring nanocrystalline diamond film properties
08/22/2002US20020113316 Semiconductor device and method of manufacturing the same
08/22/2002US20020113260 Rhodium-rich oxygen barriers
08/22/2002US20020113249 Semiconductor element
08/22/2002US20020112896 Coated cutting tool insert with iron-nickel based binder phase
08/22/2002US20020112819 Remote plasma generator with sliding short tuner
08/22/2002US20020112666 High density plasma chemical vapor deposition chamber
08/22/2002DE10104614A1 Plasmaanlage und Verfahren zur Erzeugung einer Funktionsbeschichtung Plasma system and method for generating a functional coating
08/22/2002DE10104613A1 Plasmaanlage und Verfahren zur Erzeugung einer Funktionsbeschichtung Plasma system and method for generating a functional coating
08/22/2002DE10103340A1 Verfahren zum Wachsen von Kohlenstoff-Nanoröhren oberhalb einer elektrisch zu kontaktierenden Unterlage sowie Bauelement A method for growing carbon nanotubes above a electrically contacting pad and component
08/21/2002EP1171644A4 Method and apparatus for controlling polymerized teos build-up in vacuum pump lines
08/21/2002EP1034146B1 Improvements in coating glass
08/21/2002EP0996766B1 Method for producing a magnesia based deposit
08/21/2002CN1365534A Radio frequency power source for genrating an inducively coupled plasma
08/21/2002CN1365515A Method for producing semiconductor crystal
08/21/2002CN1365512A Improved ladder boat for supporting wafers
08/21/2002CN1365400A Method for producing ceramic and apparatus for producing the same, semicondcutor device and piezoelectric device
08/21/2002CN1365399A Method for producing ceramic and apparatus for producing the same, semiconductor device and piezoelectric device
08/21/2002CN1365139A Method for removing oxide on silicon surface under low temperature and epitaxial growth
08/21/2002CN1365138A Gas projector and etching device comprising said projector
08/21/2002CN1364946A Electronically cyclic resonating, microwave plasma reinforcing and metal and organic chemically vapor-phase depositing epitaxial system and technology
08/21/2002CN1364945A Process for preparing selective diamond film
08/21/2002CN1089320C Method and device for coating glass
08/20/2002US6437290 Heat treatment apparatus having a thin light-transmitting window
08/20/2002US6436837 Domed wafer reactor vessel window with reduced stress at atmospheric and above atmospheric pressures
08/20/2002US6436826 Chemical enhancer layer formed on damascene pattern which is filled with copper using mocvd; enhancer exposed to plasma or radical plasma process so that it remains only within a bottom portion of damascene pattern.
08/20/2002US6436822 Method for making a carbon doped oxide dielectric material
08/20/2002US6436820 Method for the CVD deposition of a low residual halogen content multi-layered titanium nitride film having a combined thickness greater than 1000 Å
08/20/2002US6436797 Apparatus and method for forming a deposited film on a substrate
08/20/2002US6436796 Systems and methods for epitaxial processing of a semiconductor substrate
08/20/2002US6436739 Thick adherent dielectric films on plastic substrates and method for depositing same
08/20/2002US6436519 Cutting tool with multilayer, wear-resistant coating
08/20/2002US6436488 Defining a plasma volume in a process chamber, defining a total flow rate of a mixture of gases introduced into the process chamber, the mixture of gases including a silicon containing precursor; wherein the total flow rate is the sum
08/20/2002US6436487 Film deposition process wherein a plasma generation chamber is divided from a deposition chamber, radicals are extracted from the plasma
08/20/2002US6436361 Silicon carbide and process for its production
08/20/2002US6436304 Plasma processing method
08/20/2002US6436303 Film removal employing a remote plasma source
08/20/2002US6436230 Process device
08/20/2002US6436204 Diamond coated cutting tools and method of manufacture
08/20/2002US6436203 CVD apparatus and CVD method
08/20/2002US6436196 Apparatus and method for forming an oxynitride insulating layer on a semiconductor wafer
08/20/2002US6436195 Method of fabricating a MOS device
08/20/2002US6436193 Gas processing apparatus baffle member, and gas processing method
08/20/2002US6436192 Apparatus for aligning a wafer
08/20/2002US6435869 Quartz window having reinforcing ribs
08/20/2002US6435865 Apparatus and method for positioning gas injectors in a vertical furnace
08/20/2002US6435798 Semiconductor processing apparatus with substrate-supporting mechanism
08/20/2002US6435797 Method and device for loading a susceptor
08/20/2002US6435428 Showerhead apparatus for radical-assisted deposition
08/20/2002US6435229 Bulk chemical delivery system
08/20/2002US6435215 Gas panel
08/20/2002US6435197 Method of cleaning a semiconductor fabricating apparatus
08/20/2002US6435131 Ion flow forming method and apparatus
08/20/2002US6435130 Plasma CVD apparatus and plasma processing method
08/15/2002WO2002063677A1 Formation of a tantalum-nitride layer
08/15/2002WO2002063666A1 A chemical vapor deposition method for depositing copper film using hydrogen plasma and surfactant
08/15/2002WO2002063074A1 Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
08/15/2002WO2002063065A1 Film forming device
08/15/2002WO2002047445A3 Chemical plasma cathode
08/15/2002WO2002025696A3 Reducing deposition of process residues on a surface in a chamber
08/15/2002WO2001045135A9 Plasma reactor cooled ceiling with an array of thermally isolated plasma heated mini-gas distribution plates
08/15/2002WO2001023636A9 Method and apparatus for controlling chamber surfaces in a semiconductor processing reactor
08/15/2002WO2001004376A9 A method of forming a silicon nitride layer on a semiconductor wafer
08/15/2002US20020111042 Method of depositing a low K dielectric with organo silane
08/15/2002US20020111040 Method and apparatus for manufacturing a semiconductor device
08/15/2002US20020111039 Method of forming low dielectric silicon oxynitride spacer films highly selective to etchants
08/15/2002US20020111020 Application of controlling gas valves to reduce particles from CVD process
08/15/2002US20020110998 Chemical vapor deposition method
08/15/2002US20020110991 Sequential pulse deposition
08/15/2002US20020110769 Heat treatment method and heat treatment apparatus
08/15/2002US20020110695 Multilayer article and method of making by arc plasma deposition
08/15/2002US20020110648 Diamond film depositing apparatus and method thereof
08/15/2002US20020109954 Electrostatic chucks and process for producing the same
08/15/2002US20020109199 Transistor devices
08/15/2002US20020109121 Corrosion-resistive members
08/15/2002US20020108928 Holding device for an optical element made of a crystalline material
08/15/2002US20020108714 Processing chamber for atomic layer deposition processes
08/15/2002US20020108711 Gas distribution apparatus of semiconductor equipment
08/15/2002US20020108573 Using pickling solution comprising nitric acid and oxidizing agents; lower cost
08/15/2002US20020108570 Method and apparatus of growing a thin film onto a substrate
08/15/2002US20020108560 Method for manufacturing a diamond cylinder array having dents therein
08/14/2002EP1231295A2 Hard wearing metal part coated with mixed oxides
08/14/2002EP1231293A2 Method of rapid chemical vapor deposition of copper metal thin films
08/14/2002EP1230668A2 Method and apparatus for producing uniform process rates
08/14/2002EP1230667A2 Method and apparatus for controlling the volume of a plasma
08/14/2002EP1230666A1 Plasma processing systems and method therefor
08/14/2002EP1230664A1 Materials and gas chemistries for processing systems
08/14/2002EP1230422A1 Process and composition for treating metals
08/14/2002EP1230421A1 Method of modifying source chemicals in an ald process
08/14/2002EP1230420A1 Abatement of effluent from chemical vapor deposition processes using ligand exchange resistant metal-organic precursor solutions
08/14/2002EP1230419A1 COMPOSITION AND METHOD FOR CVD DEPOSITION OF Zr/Hf SILICATE FILMS
08/14/2002EP1230311A1 Deposition of fluorosilsesquioxane films