Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
09/2002
09/03/2002US6444478 Barium-strontium-titanate film, preferably having a thickness of less than about 600 .ang.. according to the present invention, the dielectric film is preferably formed using a chemical vapor deposition process in which an interfacial
09/03/2002US6444327 Silicon oxide film, method of forming the silicon oxide film, and apparatus for depositing the silicon oxide film
09/03/2002US6444326 Adjustment physical properties by exposure to silicon hydride
09/03/2002US6444304 Anodic oxide layer and ceramic coating for aluminum alloy excellent in resistance to gas and plasma corrosion
09/03/2002US6444277 Method for depositing amorphous silicon thin films onto large area glass substrates by chemical vapor deposition at high deposition rates
09/03/2002US6444265 Method for producing a titanium monophosphide layer and its use
09/03/2002US6444264 Method for liquid delivery CVD utilizing alkane and polyamine solvent compositions
09/03/2002US6444263 Supplying additional carbon monoxide during vapor deposition
09/03/2002US6444262 Substrate holder; interior vacuum; film forming semiconductor
09/03/2002US6444137 Sputtering, ion etching, vapor deposition
09/03/2002US6444085 Plasma gases generators cells having semiconductors ceillings and side walls connected to power sources, supports and coils
09/03/2002US6444042 Restricts generation of contaminating particles by facilitating temperature control of shower head unit; even injection of gases onto wafers
09/03/2002US6444041 Methods, complexes, and system for forming metal-containing films
09/03/2002US6444040 Gas distribution plate
09/03/2002US6444039 Three-dimensional showerhead apparatus
09/03/2002US6444038 Dual fritted bubbler
09/03/2002US6444037 Can provide high temperature deposition, heating and efficient cleaning, for forming dielectric films having thickness uniformity, good gap fill capability, high density and low moisture
09/03/2002US6444036 Construction of a film on a semiconductor wafer
09/03/2002US6444027 Improved quality semiconductor wafers; complete cleaning and removal of native oxide from back surface; reduced autodoping of front surface; eliminating halo affect; preventing wafer float during loading
09/03/2002US6443435 Vaporization of precursors at point of use
09/03/2002US6443191 Vacuum processing methods
09/03/2002US6443165 Method for cleaning plasma treatment device and plasma treatment system
09/03/2002US6443092 Apparatus for synthesizing diamond film by DC PACVD
08/2002
08/29/2002WO2002067336A1 Memory film, method of manufacturing the memory film, memory element, semiconductor storage device, semiconductor integrated circuit, and portable electronic equipment
08/29/2002WO2002067319A2 Copper interconnect structure having diffusion barrier
08/29/2002WO2002067302A2 Rhodium-rich oxygen barriers
08/29/2002WO2002067285A2 Device and method for discharging dielectric surfaces
08/29/2002WO2002004691A3 Systems and methods for remote plasma clean
08/29/2002WO2001005487A9 Auto-switching gas delivery system utilizing sub-atmospheric pressure gas supply vessels
08/29/2002US20020120296 Implantable device using ultra-nanocrystalline diamond
08/29/2002US20020119673 Method and apparatus for forming material layers from atomic gasses
08/29/2002US20020119660 Film thickness control using spectral interferometry
08/29/2002US20020119657 Bonding copper nucleation layer to barrier undercoatings
08/29/2002US20020119642 Method for fabricating a semiconducting nitride film, susceptor tray, and apparatus for fabricating a semiconducting nitride film
08/29/2002US20020119617 Process for fabricating capacitor having dielectric layer with pervskite structure and apparatus for fabricating the same
08/29/2002US20020119607 Method for manufacturing silicon oxide film, method for manufacturing semiconductor device, semiconductor device, display device and infrared light irradiating device
08/29/2002US20020119327 Silicon based films formed from iodosilane precursors and method of making the same
08/29/2002US20020119326 Process for forming a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material characterized by improved resistance to oxidation
08/29/2002US20020119316 Protective overcoat layer for magnetic recording discs having enhanced corrosion resistance properties
08/29/2002US20020119315 Using fluorinated organosilicon compound
08/29/2002US20020119250 Method of depositing low dielectric constant silicon carbide layers
08/29/2002US20020119243 Parallel deposition, synthesis and screening of an array of diverse materials at known locations on a single substrate surface
08/29/2002US20020119176 Implantable microfluidic delivery system using ultra-nanocrystalline diamond coating
08/29/2002US20020117647 Vapor deposition approach from metalorganic precursors, such as metal ( beta -diketonates)
08/29/2002US20020117472 Cleaning of multicompositional etchant residues
08/29/2002US20020117471 Method of plasma heating and etching a substrate
08/29/2002US20020117399 Barrier composed of highly resistive materials include metal oxides, and tantalum nitride, coated onto the sidewalls and bottom of via hole intented for copper metallization
08/29/2002US20020117262 Chemical vapor deposition chamber lid assembly
08/29/2002US20020117199 Process for producing photovoltaic devices
08/29/2002US20020117114 Method and apparatus for modifying surface of container made of polymeric compound
08/29/2002US20020117112 Vacuum processing apparatus
08/29/2002US20020117102 Iron nitride thin film and methods for production thereof
08/29/2002US20020117082 Process for forming a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material characterized by improved resistance to oxidation
08/28/2002EP1235262A1 Heat treatment device
08/28/2002EP1235257A1 Semiconductor-manufacturing apparatus
08/28/2002EP1234808A1 Transparent mineral bodies having an antireflection layer and method of producing the same
08/28/2002EP1234322A2 Method and apparatus for supercritical processing of multiple workpieces
08/28/2002CN1366334A Method of chemical gaseous phase sedimenting tungsten on semiconductor substrate
08/28/2002CN1365946A Process for directly synthesizing ultra-long single-wall continuous nano carbon tube
08/28/2002CN1089944C Electric lamp coated with interference film
08/27/2002US6441620 Method for fault identification in a plasma process
08/27/2002US6441491 Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device containing the same
08/27/2002US6441393 Semiconductor devices with selectively doped III-V nitride layers
08/27/2002US6441350 Temperature control system for a thermal reactor
08/27/2002US6440878 Plasma enhanced chemical vapor deposition (pecvd) process is provided for depositing one or more dielectric material layers on a substrate for use in interconnect structures of integrated circuits
08/27/2002US6440876 Low-K dielectric constant CVD precursors formed of cyclic siloxanes having in-ring SI—O—C, and uses thereof
08/27/2002US6440866 Plasma reactor with heated source of a polymer-hardening precursor material
08/27/2002US6440785 Method of manufacturing a semiconductor device utilizing a laser annealing process
08/27/2002US6440610 Negative active material comprises a crystalline or amorphous carbon core, a catalyst layer formed on the core, and carbon vapor growing fiber or carbon nanotubes which improve conductivity imrpving rate and cycle life
08/27/2002US6440565 Biocompatible metallic materials grafted with sulfonated poly(ethylene oxide) and preparation thereof
08/27/2002US6440550 Deposition of fluorosilsesquioxane films
08/27/2002US6440505 Methods for forming field emission display devices
08/27/2002US6440504 Vacuum processing apparatus having first means for evacuating vacuum vessel from atmospheric pressure to vacuum and second means for evacuating inside of vacuum vessel during generation of plasma, and vessel is movable between them
08/27/2002US6440495 Chemical vapor deposition of ruthenium films for metal electrode applications
08/27/2002US6440494 Positioning solid source of metal above substrate in chemical vapor deposition chamber, injecting organic gas, heating source to form vapor organometallic precursor, heating substrate to decompose precursor on surface and form film
08/27/2002US6440260 Plasma monitoring method and semiconductor production apparatus
08/27/2002US6440243 Combining materials comprising lead, zirconium, titanium and bismuth together to form a mixture, at least one of the materials being provided densifying the mixture to form the ceramic composition;
08/27/2002US6440220 Method and apparatus for inhibiting infiltration of a reactive gas into porous refractory insulation
08/27/2002US6440219 Replaceable shielding apparatus
08/27/2002US6440202 Metalorganic chemical vapor deposition (mocvd); reduced oxy content, or oxygen-free; for liquid delivery of cvd copper; good adhesion and electroconductivity
08/27/2002US6440150 Medical scissors with wear-reducing coating
08/27/2002US6439155 Remote plasma generator with sliding short tuner
08/22/2002WO2002065820A1 Apparatus for generating low temperature plasma at atmospheric pressure
08/22/2002WO2002065547A2 METHOD OF OBTAINING LOW TEMPERATURE ALPHA-Ta THIN FILMS USING WAFER BIAS
08/22/2002WO2002065531A1 Focus ring for semiconductor treatment and plasma treatment device
08/22/2002WO2002065526A1 Methods of preparing organometallic compounds and novel organometallic dimers
08/22/2002WO2002065525A1 Integration of high k gate dielectric
08/22/2002WO2002065517A2 Deposition method over mixed substrates using trisilane
08/22/2002WO2002065516A2 Improved process for deposition of semiconductor films
08/22/2002WO2002065510A1 Susceptor pocket profile to improve process performance
08/22/2002WO2002065508A2 Dopant precursors and processes
08/22/2002WO2002064853A2 Thin films and methods of making them using trisilane
08/22/2002WO2002050334A3 On-site cleaning gas generation for process chamber cleaning
08/22/2002WO2002045561A3 Surface sealing showerhead for vapor deposition reactor having integrated flow diverters
08/22/2002WO2002043115A3 Surface preparation prior to deposition
08/22/2002WO2002036514A3 Method of ion beam milling a glass substrate prior to depositing a coating system thereon, and corresponding system for carrying out the same
08/22/2002US20020115886 Tantalum tertiary amylimido tris (dimethylamide), a process for producing the same, a solution of starting material for MOCVD using the same, and a method of forming a tantalum nitride film using the same
08/22/2002US20020115306 Method for forming a thin film
08/22/2002US20020115275 Method for forming a dielectric layer of a semiconductor device and a capacitor using the same
08/22/2002US20020115269 Method of depositing amorphous silicon based films having controlled conductivity