Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
09/2002
09/24/2002US6453543 Transport and transfer device
09/19/2002WO2002073679A1 Vapor growth method for metal oxide dielectric film and pzt film
09/19/2002WO2002073676A1 Plasma treatment device
09/19/2002WO2002073675A1 Cleaning method for substrate treatment device and substrate treatment device
09/19/2002WO2002073654A1 Plasma chamber support having dual electrodes
09/19/2002WO2002073329A2 Valve control system for atomic layer deposition chamber
09/19/2002WO2002073257A1 Silica-based optical device fabrication
09/19/2002WO2002072914A1 Coating of substrates
09/19/2002WO2002072502A1 Method for producing sic fiber/sic composite material having high strength
09/19/2002WO2002072278A2 Protective cage for coating of medical devices
09/19/2002WO2002060828A3 Apparatus and method for atmospheric pressure reactive atom plasma processing for shaping of damage free surfaces
09/19/2002WO2002050875A3 Heating configuration for use in thermal processing chambers
09/19/2002WO2000034550A3 Cvd processes using bi aryl
09/19/2002WO2000034549A3 Cvd process using bi alcoxides
09/19/2002US20020133258 Nitrogen doping of FSG layer
09/19/2002US20020132497 Substrate processing apparatus and method for manufacturing semiconductor device
09/19/2002US20020132495 Flash CVD process for synthesis of carbon nanotrees
09/19/2002US20020132487 Wafer processing apparatus and wafer processing method using the same
09/19/2002US20020132481 Tungsten deposition process
09/19/2002US20020132475 Chemistry for chemical vapor deposition of titanium containing films
09/19/2002US20020132455 Method for forming crystalline silicon layer and crystalline silicon semiconductor device
09/19/2002US20020132411 Semiconducting devices and method of making thereof
09/19/2002US20020132386 Silica-based optical device fabrication
09/19/2002US20020132380 Graphic user interface, which is based on the html/xml page format, is implemented in the at least one display/operator control unit and/or the computing unit
09/19/2002US20020132374 Method for controlling deposition of dielectric films
09/19/2002US20020132101 Deposited thin film void-column network materials
09/19/2002US20020132051 Film or coating deposition and powder formation
09/19/2002US20020132048 Enables zirconium- and/or hafnium-containing films to be readily formed, exhibiting good electrical properties and low current leakages
09/19/2002US20020130385 Method of manufacturing insulating layer and semiconductor device including insulating layer, and semiconductor device formed thereby
09/19/2002US20020130032 Method and apparatus for the fabrication of ferroelectric films
09/19/2002US20020129904 Plasma treatment apparatus and method of producing semiconductor device using the apparatus
09/19/2002US20020129902 Low-temperature compatible wide-pressure-range plasma flow device
09/19/2002US20020129769 Chemical vapor deposition apparatus
09/19/2002US20020129768 Chemical vapor deposition apparatuses and deposition methods
09/19/2002US20020129475 Pedestal assembly with enhanced thermal conductivity
09/19/2002EP1144716A3 Cvd process using bi alcoxides
09/19/2002DE10113030A1 Plasma coating process, especially plasma-assisted chemical vapor deposition process, for coating a substrate with a metallic coating, comprises exposing substrate in reaction chamber to process gas flowing through chamber
09/19/2002CA2434713A1 Protective cage for coating of medical devices
09/18/2002EP1240660A1 Method of manufacturing an electrode for a plasma reactor and such electrode
09/18/2002EP1240659A1 Arrangement for coupling microwave energy into a treatment chamber
09/18/2002EP1240366A2 Chemical vapor deposition reactor and process chamber for said reactor
09/18/2002EP1088332B1 Focus ring arrangement for substantially eliminating unconfined plasma in a plasma processing chamber
09/18/2002EP0826131B1 Unibody crucible
09/18/2002EP0740757B1 Chemical refill system for high purity chemicals
09/18/2002CN1370329A Appts. for forming polymer continuously on surface of metal by DC plasma
09/18/2002CN1370325A Plasma reaction chamber component having improved temp uniformity
09/18/2002CN1369465A Ceramic parts formed micro crowning on its surface and its mfg. method
09/18/2002CN1091171C Method for preapring metal-base composite material reinforced by non-continuous ceramics reinforcing agent
09/17/2002US6452017 Thermally stable trispyrazolylmethanate metal complexes; chemical vapor deposition of such as barium strontium titanate thin films on random access memory devices
09/17/2002US6451713 Semiconductors
09/17/2002US6451695 Depositing a monolayer of metal on the substrate surface by flowing a molecular precursor gas or vapor bearing the metal over a surface, flowing at least one radical species into the chamber and over the surface
09/17/2002US6451692 Preheating of chemical vapor deposition precursors
09/17/2002US6451686 Control of semiconductor device isolation properties through incorporation of fluorine in peteos films
09/17/2002US6451390 Plasma enhanced chemical vapor deposition; silicon dioxide film from tetraethyl silicate
09/17/2002US6451388 Method of forming titanium film by chemical vapor deposition
09/17/2002US6451214 Etching, shaping, or patterning layers or films with ceric ammonium nitrate in fabrication of semiconductor systems
09/17/2002US6451178 Interference layer system
09/17/2002US6451160 Plasma generation apparatus with a conductive connection member that electrically connects the power source to the electrode
09/17/2002US6451159 Grounded centering ring for inhibiting polymer build-up on the diaphragm of a manometer
09/17/2002US6451157 Gas distribution apparatus for semiconductor processing
09/17/2002US6451119 Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
09/17/2002US6450200 Flow control of process gas in semiconductor manufacturing
09/17/2002US6450117 Directing a flow of gas in a substrate processing chamber
09/17/2002US6450116 Apparatus for exposing a substrate to plasma radicals
09/17/2002US6449871 Semiconductor process chamber having improved gas distributor
09/17/2002US6449844 Heat exchanger apparatus for a semiconductor wafer support and method of fabricating same
09/12/2002WO2002071464A1 System and method for forming film
09/12/2002WO2002071463A1 Shower head gas injection apparatus with secondary high pressure pulsed gas injection
09/12/2002WO2002070779A1 Apparatus and method for sequential deposition of films
09/12/2002WO2002070775A1 Chemical vapour infiltration method for densifying porous substrates having a central passage
09/12/2002WO2002070142A1 Method and apparatus for improved temperature control in atomic layer deposition
09/12/2002WO2002054454A3 Diamond coatings on reactor wall and method of manufacturing thereof
09/12/2002WO2002023588A3 Capacitively coupled plasma reactor
09/12/2002WO2002011190A3 Precursors for incorporating nitrogen into a dielectric layer
09/12/2002US20020127954 Process for the chemical-mechanical polishing of isolation layers produced using the STI technology, at elevated temperatures
09/12/2002US20020127883 Bis (tertiarybutylamino) silane and ozone based doped and undoped oxides
09/12/2002US20020127875 Point of use mixing and aging system for chemicals used in a film forming apparatus
09/12/2002US20020127874 Method of fabricating low dielectric constant film
09/12/2002US20020127872 Apparatus and method for forming an oxynitride insulating layer on a semiconductor wafer
09/12/2002US20020127869 Semiconductor device and semiconductor device manufacturing method
09/12/2002US20020127852 Method of manufacturing semiconductor integrated circuit device and semiconductor manufacturing apparatus
09/12/2002US20020127851 Method of producing semiconductor device
09/12/2002US20020127828 Method of processing wafer
09/12/2002US20020127807 Semiconductor device, semiconductor wafer, and methods of producing the same device and wafer
09/12/2002US20020127764 Thin-film solar cells and method of making
09/12/2002US20020127745 By irradiating the test liquid with ultraviolet radiation and measuring the change in conductivity due to the produced organic acids and carbon dioxide
09/12/2002US20020127508 Emissivity-change-free pumping plate kit in a single wafer chamber
09/12/2002US20020127416 For forming dielectric film
09/12/2002US20020127405 Diamond semiconductor and method for the fabrication thereof
09/12/2002US20020127352 Irradiating focused ion beam and depositing a film on a narrowly limited strip shape region from ends of sample; sequentially shifting irradiation region in a tip end direction to cause a thin deposition layer to extend
09/12/2002US20020127350 Forming plasma in chamber; flowing gas suitable for depositing layer on substrate into process chamber; limiting sputter nonuniformity by attenuating magnetic field having a strength less than about 0.5 gauss within chamber
09/12/2002US20020127338 Adding to a gas stream including materials to be deposited an effective amount of nitroxyl radicals for depositing thin layers by chemical vapor deposition
09/12/2002US20020127336 Method for growing thin films by catalytic enhancement
09/12/2002US20020127333 Plastic container having a carbon-treated internal surface
09/12/2002US20020127112 Enhanced coating system for turbine airfoil applications
09/12/2002US20020126283 Method for real-time control of the fabrication of a thin-film structure by ellipsometric measurement
09/12/2002US20020125491 Semiconductor element
09/12/2002US20020125240 Heating device, method for producing same and film forming apparatus
09/12/2002US20020125239 Multi-zone resistive heater
09/12/2002US20020125223 Radio frequency power source for generating an inductively coupled plasma