C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes

Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
10/2002
10/10/2002	US20020144980 Plasma processing system
10/10/2002	US20020144787 Supporting structure for a ceramic susceptor
10/10/2002	US20020144786 Substrate temperature control in an ALD reactor
10/10/2002	US20020144784 Wafer processing apparatus having a chamber with an upper wall having gas supply openings formed therein which promote more even processing of a wafer
10/10/2002	US20020144706 Remote plasma cleaning of pumpstack components of a reactor chamber
10/10/2002	US20020144657 ALD reactor employing electrostatic chuck
10/10/2002	US20020144655 Gas valve system for a reactor
10/10/2002	DE10115492A1 Reaction chamber reconditioning method for CVD reactor, etching reactor, involves introducing mixture of hydrogen and nitrogen gas into chamber that reacts with photoresist layer on dummy wafer
10/10/2002	DE10115394A1 Maschinenbauteil und/oder verfahrenstechnische Anlage mit einem Hohlraum und Reinigungsverfahren hierfür Machine component and / or process plant having a cavity and cleaning method therefor
10/09/2002	EP1247876A2 Method for manufacturing a semiconductor device
10/09/2002	EP1247813A2 Trialkyl group va metal compounds
10/09/2002	EP1247789A2 Alpha-alumina coated cutting tool
10/09/2002	EP1247587A2 Process and apparatus for treating and/or coating a surface of an object
10/09/2002	EP1247292A1 Method of forming copper interconnections and thin films using chemical vapor deposition with catalyst
10/09/2002	EP1246694A1 In-situ air oxidation treatment of mocvd process effluent
10/09/2002	EP1129234B1 Dual channel gas distribution plate
10/09/2002	EP0898504B1 Abrasive body
10/08/2002	US6462310 Hot wall rapid thermal processor
10/08/2002	US6461982 Methods for forming a dielectric film
10/08/2002	US6461980 Apparatus and process for controlling the temperature of a substrate in a plasma reactor chamber
10/08/2002	US6461979 LPCVD furnace uniformity improvement by temperature ramp down deposition system
10/08/2002	US6461972 Integrated circuit fabrication dual plasma process with separate introduction of different gases into gas flow
10/08/2002	US6461961 Depositing a ruthenium film with excellent homogeneity and film quality, by reacting a ruthenium precursor and oxygen containing gas, controlling oxygen stoichiometry to prevent formation of the ruthenium oxide film
10/08/2002	US6461960 Method of manufacturing a semiconductor device
10/08/2002	US6461731 Solar management coating system including protective DLC
10/08/2002	US6461692 Forming thin film
10/08/2002	US6461675 Electrodepositing noble metal (platinum, palladium, or iridium) seed layer on substrate, then depositing copper layer on seed layer via chemical vapor deposition; adhesion promotion
10/08/2002	US6461444 Method and apparatus for manufacturing semiconductor device
10/08/2002	US6461439 Apparatus for supporting a semiconductor wafer during processing
10/08/2002	US6461437 Apparatus used for fabricating liquid crystal device and method of fabricating the same
10/08/2002	US6461436 Apparatus and process of improving atomic layer deposition chamber performance
10/08/2002	US6461435 Showerhead with reduced contact area
10/08/2002	US6461434 Quick-change flange
10/08/2002	US6461428 Method and apparatus for controlling rise and fall of temperature in semiconductor substrates
10/08/2002	US6461407 Liquid raw material is deaerated and supplied from a container to a liquid flow control section by the pressure of first inert gas, inside a gas permeable fluoropolymer tube, passing second inert gas with low permeability than first
10/08/2002	US6460482 Gas shower unit for semiconductor manufacturing apparatus and semiconductor manufacturing apparatus
10/08/2002	CA2199305C Sanitary container and production process thereof
10/08/2002	CA2184206C Molded glass plate produced by mold with modified surface
10/03/2002	WO2002078073A1 Method of cleaning cvd device and cleaning device therefor
10/03/2002	WO2002078070A1 A device for epitaxially growing objects by cvd
10/03/2002	WO2002078067A1 Method for growing crystal of gallium nitride compound semiconductor and electronic device having gallium nitride compound semiconductor
10/03/2002	WO2002078042A2 Neutral particle beam processing apparatus
10/03/2002	WO2002078040A2 Neutral particle beam processing apparatus
10/03/2002	WO2002077320A1 Method for producing hydrogenated silicon oxycarbide films
10/03/2002	WO2002077319A1 Diamond film depositing apparatus using microwaves and plasma
10/03/2002	WO2002077312A2 Method for increasing compression stress or reducing internal tension stress of a layer
10/03/2002	WO2002076727A2 Corrosion-stable laminate, method for the production thereof, and its use
10/03/2002	WO2002076581A1 Trap apparatus and method for condensable by-products of deposition reactions
10/03/2002	WO2001017692A9 Improved apparatus and method for growth of a thin film
10/03/2002	US20020143202 Method of depositing a high-adhesive copper thin film on a metal nitride substrate
10/03/2002	US20020143200 Dissolving NbCl5 (niobium chloride) or TaCl5(tantalum chloride) in an alcohol containing ammonia; reacting in low temperature to form niobium(V) alkoxide or the tantalum(V) alkoxide
10/03/2002	US20020142709 Superhard material article of manufacture
10/03/2002	US20020142624 Method of forming dielectric films
10/03/2002	US20020142621 Vapor phase deposition of uniform and ultrathin silances
10/03/2002	US20020142612 Shielding plate in plasma for uniformity improvement
10/03/2002	US20020142611 Corrosion resistant component of semiconductor processing equipment such as a plasma chamber
10/03/2002	US20020142591 Method of synthesizing copper precursors
10/03/2002	US20020142590 Method of barrier metal surface treatment prior to Cu deposition to improve adhesion and trench filling characteristics
10/03/2002	US20020142589 Method of obtaining low temperature alpha-ta thin films using wafer bias
10/03/2002	US20020142588 Mixed composition interface layer and method of forming
10/03/2002	US20020142585 Reacting a mixture comprising an oxidizable siloxane and an oxidizable compound with a tertiarybutyl, tertiarybutoxy, furfuryl, furfuryloxy, or neopentyl group that decomposes to gases that leave voids when the material is annealed
10/03/2002	US20020142579 Chemical vapor deposition from a silyl ether, a silyl ether oligomer, or an organosilicon compound containing one or more reactive groups, to form an interlayer dielectric film having a dielectric constant of 3.5 or less.
10/03/2002	US20020142572 Method for forming metallic film and apparatus for forming the same
10/03/2002	US20020142541 Methods of forming nitrogen-containing masses, silicon nitride layers, and capacitor constructions
10/03/2002	US20020142497 Method of manufacturing a semiconductor device
10/03/2002	US20020142493 In-situ thickness measurement for use in semiconductor processing
10/03/2002	US20020142144 Single c-axis PGO thin film electrodes having good surface smoothness and uniformity and methods for making the same
10/03/2002	US20020142104 Computers
10/03/2002	US20020142095 Method of forming a film by vacuum ultraviolet irradiation
10/03/2002	US20020141477 Thin film thickness monitoring method and substrate temperature measuring method
10/03/2002	US20020141155 Thermal management components
10/03/2002	US20020140102 Multi-layered barrier metal thin films for Cu interconnect by ALCVD
10/03/2002	US20020140098 Semiconductor device and method of manufacturing the same
10/03/2002	US20020140048 Semiconductor integrated circuit device, and method of manufacturing the same
10/03/2002	US20020140005 Semiconductor capacitors having tantalum oxide layers and methods for manufacturing the same
10/03/2002	US20020139914 Locator for a material sheet
10/03/2002	US20020139446 Method of achieving high adhesion of CVD copper thin films on TaN substrates
10/03/2002	US20020139307 Cooling gas delivery system for a rotatable semiconductor substrate support assembly
10/03/2002	US20020139306 Locator for a material sheet
10/03/2002	US20020139304 Semiconductor manufacturing apparatus
10/03/2002	CA2440366A1 A device for epitaxially growing objects by cvd
10/02/2002	EP1246254A2 MFOS memory transistor and method of fabricating same
10/02/2002	EP1246224A2 Plasma processing methods and apparatus
10/02/2002	EP1245896A1 Method and device for forming required gas atmosphere
10/02/2002	EP1245700A1 Kappa and/or gamma A1203 multi-coating deposited by low temperature CVD
10/02/2002	EP1245696A2 Plasma resistant member
10/02/2002	EP1245695A2 Method for depositing a copper film
10/02/2002	EP1245298A1 Process for the production of coated plastic articles
10/02/2002	EP1244823A1 Device for producing a gas mixture
10/02/2002	EP1244822A1 Diamond-like carbon coated pet
10/02/2002	EP1244821A1 Articles coated with aluminum nitride by chemical vapor deposition
10/02/2002	EP1244527A2 Method for depositing a coating on the wall of metallic containers
10/02/2002	EP0876528B1 Capacitively coupled rf diamond-like-carbon reactor
10/02/2002	EP0842532B1 Process for generating a spacer in a structure
10/02/2002	EP0663963B1 Improvements in the method and apparatus of vacuum deposition
10/02/2002	DE10213287A1 Verfahren zur Ausbildung einer Wolframsilizidschicht A method of forming a tungsten silicide
10/02/2002	DE10201992A1 Device for plasma-mediated working of surfaces of planar substrates using HF/VHF low pressure discharge lamps comprises a flat electrode connected to a frequency generator in a chamber containing an electrically insulated tunnel
10/02/2002	DE10152536A1 Verfahren und Vorrichtung zum Reduzieren einer Emission von Perfluorverbindungen (PFC-Emission) während der Halbleiterherstellung Method and apparatus for reducing the emission of perfluorocompounds (PFC emissions) during semiconductor manufacture
10/02/2002	DE10125675C1 Process for heating a substrate comprises placing the substrate onto a heating device covered with a glass ceramic plate, heating from below to the process temperature for the coating, and removing from the heating device, and coating
10/02/2002	DE10123554A1 Verfahren zur Erhöhung der Druckspannung oder zur Erniedrigung der Zugeigenspannung einer CVD-, PCVD- oder PVD-Schicht und Schneideinsatz zum Zerspanen A process for increasing the compressive stress or tensile stress to lower the a CVD, PCVD, or PVD-layer and cutting insert for chip removal

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