C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes

Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
10/2002
10/17/2002	US20020150823 Atmospheric pressure CVD grown lithium ion-conducting electrolyte
10/17/2002	US20020150695 Method of forming a thin film
10/17/2002	US20020150687 Multilayer protective coatings
10/17/2002	US20020150684 Vapor deposition; heating; applying bias voltage
10/17/2002	US20020150682 High pressure plasma vapor deposition
10/17/2002	US20020150395 Heat treatment apparatus using a lamp for rapidly and uniformly heating a wafer
10/17/2002	US20020149317 Performance evaluation method for plasma processing apparatus for continuously maintaining a desired performance level
10/17/2002	US20020149028 Semiconductor light-emitting element
10/17/2002	US20020149011 Semiconductor component and corresponding fabrication method
10/17/2002	US20020148812 Method and apparatus for performing plasma process on particles
10/17/2002	US20020148565 Mushroom stem wafer pedestal for improved conductance and uniformity
10/17/2002	US20020148561 Plasma processing apparatus and method of processing
10/17/2002	US20020148560 Apparatus and method for atmospheric pressure reactive atom plasma processing for shaping of damage free surfaces
10/17/2002	US20020148406 Atomizer
10/17/2002	DE10143587A1 Verfahren und Vorrichtung zum Behandeln und/oder Beschichten einer Fläche eines Gegenstandes Method and apparatus for treating and / or coating a surface of an object
10/17/2002	DE10118130A1 Device for depositing crystalline layers on crystalline substrates in the gas phase comprises a heated reaction chamber with substrate holders arranged in a circular manner on a support, heated sources, and a hydride feed line
10/17/2002	DE10114956A1 Semiconductor component used in DRAMs comprises a binary metal oxide dielectric layer arranged on a substrate
10/16/2002	EP1249865A2 Multi-layered barrier metal thin films for Cu interconnect by ALCVD
10/16/2002	EP1249860A2 Method to improve copper thin film adhesion to metal nitride substrates by the addition of water
10/16/2002	EP1249859A2 Substrate processing apparatus
10/16/2002	EP1249522A2 Oxygen doping method for a gallium nitride single crystal substrate and oxygen-doped N-type gallium nitride freestanding single crystal substrate
10/16/2002	EP1249514A1 Surface coated sintered alloy member
10/16/2002	EP1249033A1 Electrode assembly
10/16/2002	EP1248866A1 A method for depositing layers on a substrate
10/16/2002	EP1248865A1 Atomic-layer-chemical-vapor-deposition of films that contain silicon dioxide
10/16/2002	EP1181095A4 The surface modification of solid supports through the thermal decomposition and functionalization of silanes
10/16/2002	EP1071834B1 Method of passivating a cvd chamber
10/16/2002	EP1042544B1 Growth of very uniform silicon carbide epitaxial layers
10/16/2002	EP0981655B1 Chemical vapour deposition precursors
10/16/2002	EP0773167B1 Carbon film-coated plastic container manufacturing apparatus and method
10/16/2002	CN1375111A Chemical vapor deposition of siliconoxide films using alkylsiloxane oilgomers with ozone
10/16/2002	CN1374890A Method and system for in situ cleaning of semiconductor manufacturing equipment using combination chemistries
10/16/2002	CN1374474A Module fluid transportation apparatus
10/16/2002	CN1092717C Constraining apparatus for constraining discharge in interaction space
10/16/2002	CN1092716C Growing method for antimony induced carbon 60 film and carbon 60 film
10/15/2002	WO2002064854A1 Method of forming silicon thin film and silicon thin film solar cell
10/15/2002	US6466881 Method for monitoring the quality of a protective coating in a reactor chamber
10/15/2002	US6466124 Thin film resistor and method for forming the same
10/15/2002	US6465840 Integrated structure comprising a patterned feature substantially of single grain polysilicon
10/15/2002	US6465761 Heat lamps for zone heating
10/15/2002	US6465669 Organometallic compounds for use in metal-organic vapor-phase epitaxy
10/15/2002	US6465374 Method of surface preparation
10/15/2002	US6465373 Combines depositing a dichlorosilane nitride seeding layer with depositing a tetrachlorosilane nitride layer on a silicon-comprising substrate to improve the thickness of a dielectric silicon nitride layer deposited
10/15/2002	US6465372 Thermal chemical vapor deposition using an organosilane to form carbon-doped silicon oxide layer which is subsequently cured and densified
10/15/2002	US6465371 Atomic layer deposition (ald) using zirconium tetra-tert-butoxide as a zirconium source material instead of conventional zrcl4, so resulting film is chlorine-free
10/15/2002	US6465366 Dual frequency plasma enhanced chemical vapor deposition of silicon carbide layers
10/15/2002	US6465347 Tungsten film forming method
10/15/2002	US6465057 Rf power and a dc power and the dc power is applied to an electrode carrying the deposition target object; carbon nitride layer formed at the surface portion of the carbon film
10/15/2002	US6465051 Cleaning a plasma reactor by creating a vacuum in the chamber while introducing an etchant gas and applying rf energy to a ceiling electrode in the chamber while not necessarily applying rf energy to the coil antenna
10/15/2002	US6465049 Method for preparation of diamond film
10/15/2002	US6465045 Low stress polysilicon film and method for producing same
10/15/2002	US6465044 Chemical vapor deposition of silicon oxide films using alkylsiloxane oligomers with ozone
10/15/2002	US6465043 Between deposition of said first and second layers, maintaining pressure within the chamber at a pressure that is sufficiently high that particles dislodged by introduction of the second process do not impact the wafer
10/15/2002	US6465042 Crystalline orientation film oriented at right angles to a surface of a crystal forming film; produced by spraying a vaporized titanium alkoxide onto a heated surface at atmospheric pressure; antimicrobial activity
10/15/2002	US6464948 Airtight process chamber with substrate support; exhaust system; oxygen supplied, ozone generator connected to the process chamber via gas supply line; ozone concentration set using feedback from ozone densitometer
10/15/2002	US6464930 Furnace of apparatus for manufacturing a semiconductor device having a heat blocker for preventing heat loss during the unloading of wafers
10/15/2002	US6464912 Method for producing near-net shape free standing articles by chemical vapor deposition
10/15/2002	US6464843 Silicon carbide (sic) as a consumable chamber surface material which reduces metal and/or particle contamination; plasma etching an oxide layer on a semiconductor wafer
10/15/2002	US6464825 Substrate processing apparatus including a magnetically levitated and rotated substrate holder
10/15/2002	US6464795 Substrate support member for a processing chamber
10/15/2002	US6464794 Process chamber used in manufacture of semiconductor device, capable of reducing contamination by particulates
10/15/2002	US6464793 Semiconductor crystal growth apparatus
10/15/2002	US6464792 Process chamber with downstream getter plate
10/15/2002	US6464791 Low-pressure apparatus for carrying out steps in the manufacture of a device, a method of manufacturing a device making use of such an apparatus, and a pressure control valve
10/15/2002	US6464790 Substrate support member
10/15/2002	US6464782 Apparatus for vaporization sequence for multiple liquid precursors used in semiconductor thin film applications
10/15/2002	US6464779 Copper atomic layer chemical vapor desposition
10/15/2002	US6464778 Tungsten deposition process
10/15/2002	US6464466 Trap apparatus
10/15/2002	US6463992 Method of manufacturing seamless self-supporting aerodynamically contoured sheet metal aircraft engine parts using nickel vapor deposition
10/15/2002	US6463874 Linear applicator for using microwave enhanced cvd to uniformly deposit a thin film of material over an elongated substrate; microwaves entering the first portion are prevented from entering the second portion
10/15/2002	CA2049441C Method of coating glass
10/11/2002	CA2381113A1 Substrate processing apparatus
10/11/2002	CA2343915A1 Three dimensionally periodic structural assemblies on nanometer and longer scales
10/10/2002	WO2002080632A1 Device and control method for micro wave plasma processing
10/10/2002	WO2002080260A1 Deposition method, deposition apparatus, insulating film and semiconductor integrated circuit
10/10/2002	WO2002080259A1 Film forming method and film forming device
10/10/2002	WO2002080258A1 Integrated circuit structure
10/10/2002	WO2002080257A1 Film forming method and film forming device
10/10/2002	WO2002080256A1 Film forming method and film forming device
10/10/2002	WO2002080254A1 Microwave plasma process device, plasma ignition method, plasma forming method, and plasma process method
10/10/2002	WO2002080253A1 Device and method for plasma processing, and slow-wave plate
10/10/2002	WO2002080252A1 Plasma processing device
10/10/2002	WO2002080251A1 Plasma processing device
10/10/2002	WO2002080248A1 Plasma processing device
10/10/2002	WO2002080244A2 Improved process for deposition of semiconductor films
10/10/2002	WO2002080228A2 Structure including cubic boron nitride films
10/10/2002	WO2002079538A1 Cerium oxide containing ceramic components and coatings in semiconductor processing equipment
10/10/2002	WO2002079537A2 W-cvd with fluorine-free tungsten nucleation
10/10/2002	WO2002079211A1 Metalloamide and aminosilane precursors for cvd formation of dielectric thin films
10/10/2002	WO2002067285A3 Device and method for discharging dielectric surfaces
10/10/2002	WO2002027063A3 Vapor deposition of oxides, silicates and phosphates
10/10/2002	WO2001073157A9 Method and apparatus for reducing contamination in a loadlock
10/10/2002	US20020146916 Semiconductor device having a high-dielectric gate insulation film and fabrication process thereof
10/10/2002	US20020146903 Deformation-susceptible substrate holder for low-pressure MOCVD and process for use thereof
10/10/2002	US20020146513 Cvd ruthenium seed for cvd ruthenium deposition
10/10/2002	US20020146512 Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput
10/10/2002	US20020146511 Chemisorption technique for atomic layer deposition
10/10/2002	US20020146506 Introducing vapor-phase chemicals into a reactor with sufficiently supplied energy to cause a reaction; exhausting gases; separating first gas from exhausted gases; purifying first gas; introducing first gas into reactor
10/10/2002	US20020145210 Bubbler for use in vapor generation systems

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