Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
10/2002
10/29/2002US6471779 Gas feed ceramic structure for semiconductor-producing apparatus
10/29/2002US6471770 Method of manufacturing semiconductor substrate
10/29/2002US6470823 Apparatus and method for forming a deposited film by a means of plasma CVD
10/24/2002WO2002084729A2 Method for producing a chalcogenide-semiconductor layer of the abc2 type with optical process monitoring
10/24/2002WO2002084726A1 Ultraviolet ray assisted processing device for semiconductor processing
10/24/2002WO2002084717A1 Ceramic heater for semiconductor manufactring/inspecting apparatus
10/24/2002WO2002084715A1 Mushroom stem wafer pedestal for improved conductance and uniformity
10/24/2002WO2002084711A1 Heating system and method for heating an atmospheric reactor
10/24/2002WO2002084710A2 Systems and methods for epitaxially depositing films
10/24/2002WO2002084698A1 Inductively coupled plasma source with controllable power distribution
10/24/2002WO2002083979A2 Process and device for the deposition of an at least partially crystalline silicium layer on a substrate
10/24/2002WO2002083978A1 Device or method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates
10/24/2002WO2002083588A1 Chemical vapor deposition of antimony-doped metal oxide
10/24/2002WO2002083408A1 Laminated body
10/24/2002WO2002083296A1 Fine particles included in ultra-thin membrane in state of primary particles and cosmetic using the same
10/24/2002WO2002083286A1 Titanium alloy vacuum container and vacuum part
10/24/2002WO2002068713A8 Vaporizer
10/24/2002US20020156325 Reacting a beta-yne-one with a primary or secondary amine; used in chemical vapor deposition
10/24/2002US20020155730 Deposition of silicon oxide films
10/24/2002US20020155722 Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
10/24/2002US20020155684 Vapor deposition; amorphous and crystal structure zones
10/24/2002US20020155649 Method for fabricating a nitride film
10/24/2002US20020155644 Method and apparatus for controlling the temperature of a gas distribution plate in a process reactor
10/24/2002US20020155386 Fluorine-containing layers for damascene structures
10/24/2002US20020155325 Vapor deposition; oxidation; nucleation
10/24/2002US20020155312 Diamond coated cutting tools and method of manufacture
10/24/2002US20020155299 Photo-induced hydrophilic article and method of making same
10/24/2002US20020155230 Vapor deposition in vacuum
10/24/2002US20020155219 From titanium chloride and ammonia; aftertreatment with hydrogen gas
10/24/2002US20020155218 Plasma vapor deposition; hermetic sealing; applying vacuum
10/24/2002US20020155217 Overcoating nonmagnetic substrate; polarization
10/24/2002US20020154407 Lamp reflector with a barrier coating of a plasma polymer
10/24/2002US20020153610 Electronic devices with cesium barrier film and process for making same
10/24/2002US20020153579 Semiconductor device with thin film having high permittivity and uniform thickness
10/24/2002US20020153543 Method for manufacturing oxide ferroelectric thin film oxide ferroelectric thin film and oxide ferroelectric thin film element
10/24/2002US20020153351 Substrate processing method and substrate processing unit
10/24/2002US20020153350 Method for preventing contamination in a plasma process chamber
10/24/2002US20020153247 Apparatus and method for coating substrates
10/24/2002US20020153242 Method of manufacturing an object in a vacuum recipient
10/24/2002US20020153103 Plasma treatment apparatus
10/24/2002US20020153102 Apparatus for conditioning the atmosphere in a vacuum chamber
10/24/2002US20020153101 Semiconductor processing system and method
10/24/2002US20020152960 Thin-film disposition apparatus
10/24/2002US20020152959 Cold wall chemical vapor deposition apparatus and cleaning method of a chamber for the same
10/24/2002US20020152809 Liquid level sensor, ampoule, and liquid amount detection method
10/24/2002US20020152603 Method of manufacturing honeycomb extrusion die and die manufactured according to this method
10/24/2002DE10222347A1 Cutting body used for cutting steel workpieces comprises base body having a coating made from titanium boron nitride having a specified boron content
10/24/2002DE10119926A1 Process for optimizing the composition and/or mechanical properties of one or more layers deposited during a PVD, CVD and/or PCVD process comprises depositing layer(s) on vaporizing
10/24/2002DE10119463A1 Production of a chalcogenide halide of the ABC2 type comprises arranging metallic precursor layers, chalcogenizing with simultaneous optical process control, irradiating with light, and surface chalcogenizing to form the ABC2 phase
10/24/2002DE10119348A1 Verfahren zum Herstellen eines Heizkörpers und Heizkörper A method of manufacturing a radiator and radiator
10/24/2002DE10115241A1 Plasma torch for treating surfaces at atmospheric pressure includes a jet pump within torch to provide low pressure region
10/23/2002EP1251192A2 Manufacture process for heating element
10/23/2002EP1251190A1 Process for the uniform coating of hollow bodies
10/23/2002EP0873443B1 Diamond-like-carbon coated aramid fibers having improved mechanical properties
10/23/2002CN1375858A Method and apparatus for reducing diffuseness of perfluoro compound in process of semiconductor mfg.
10/23/2002CN1375575A Chemical vapor depositing apparatus
10/22/2002US6470144 Vaporizer for chemical vapor deposition apparatus, chemical vapor deposition apparatus, and semiconductor device manufactured thereby
10/22/2002US6469448 Inductively coupled RF plasma source
10/22/2002US6469189 Liquid double alkoxide of niobium or tantalum and alkaline earth metal, production method thereof, and production method of complex metal oxide dielectric using it
10/22/2002US6468927 Method of depositing a nitrogen-doped FSG layer
10/22/2002US6468925 Plasma enhanced chemical vapor deposition process
10/22/2002US6468924 Methods of forming thin films by atomic layer deposition
10/22/2002US6468903 Heating to >/= 800 degrees c and exposing to ammonia
10/22/2002US6468886 Reacting silicon with iodine forming silicon iodide; purify by distillation to removal impurities
10/22/2002US6468885 Deposition of device quality, low hydrogen content, hydrogenated amorphous silicon at high deposition rates
10/22/2002US6468642 Fluorine-doped diamond-like coatings
10/22/2002US6468617 Apparatus for fabricating coating and method of fabricating the coating
10/22/2002US6468604 Chemical vapor deposition, tetrakisdialkylamino titanium and ammonia, heating under low pressure of less than 100 pa; gas pressure and temperature being controlled to obtain excellent step coverage in regard to holes of aspect ratio 6 or more
10/22/2002US6468603 Interlayer dielectric film of a semiconductor; filling up a concave portion having a high aspect ratio with a film of fluorine-added carbon, the film-forming process can be conducted while generating less voids with a raised throughput
10/22/2002US6468602 Method of manufacturing a magnetic recording medium
10/22/2002US6468601 Ammonium silicon hexafluoride white powder byproduct from reaction of silane and ammonia and nf3 nitrogen fluoride; flowing plasma cleaning gas into process chamber to react with said white powder
10/22/2002US6468598 Uniform textured structure with micro-waviness having sloped or curved lateral surfaces and a height of less than 20nm.
10/22/2002US6468386 Gas delivery system
10/22/2002US6468354 Semiconductor wafer support
10/22/2002US6467490 Process for using a high nitrogen concentration plasma for fluorine removal from a reactor
10/17/2002WO2002082568A1 Secondary power source and its manufacture method
10/17/2002WO2002082530A2 In-situ thickness measurement for use in semiconductor processing
10/17/2002WO2002082525A1 Semiconductor device and production method therefor
10/17/2002WO2002082524A1 Heat treating device
10/17/2002WO2002082523A1 Heat treating method and heat treating device
10/17/2002WO2002082522A1 Single wafer processing method and system for processing semiconductor
10/17/2002WO2002082521A1 Processing method and processor
10/17/2002WO2002082517A1 Production method for semiconductor substrate and semiconductor element
10/17/2002WO2002082516A1 Gaseous phase growing device
10/17/2002WO2002082515A1 Semiconductor structure and device including a carbon film
10/17/2002WO2002082511A2 Pedestal assembly with enhanced thermal conductivity
10/17/2002WO2002081788A2 Method for h2 recycling in semiconductor processing system
10/17/2002WO2002081772A1 Methods and apparatus for forming precursors
10/17/2002WO2002081771A2 Atomic layer deposition system and method
10/17/2002WO2002081618A2 Adsorbing and non-adsorbing surfaces for biological materials
10/17/2002WO2002081366A1 Process and apparatus for the production of carbon nanotubes
10/17/2002WO2002053800A3 Windows used in thermal processing chambers
10/17/2002WO2002028548A3 Method and apparatus for forming a coating
10/17/2002WO2000036179A3 High temperature chemical vapor deposition chamber
10/17/2002WO2000007215A3 A method of allowing a stable power transmission into a plasma processing chamber
10/17/2002US20020151186 Apparatus and method for detecting an end point of chamber cleaning in semiconductor equipment
10/17/2002US20020151175 Manufacturing method of semiconductor device
10/17/2002US20020151159 Methods, complexes, and system for forming metal-containing films
10/17/2002US20020151142 Thermally stable poly-Si/high dielectric constant material interfaces
10/17/2002US20020151115 Process for production of thin film, semiconductor thin film, semiconductor device, process for production of semiconductor thin film, and apparatus for production of semiconductor thin film