C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes

Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
11/2002
11/05/2002	US6475336 Electrostatically clamped edge ring for plasma processing
11/05/2002	US6475286 Seal means for separable closing elements, such as separable elements of chemical vapor deposition chamber and deposition reactor apparatus
11/05/2002	US6475284 Gas dispersion head
11/05/2002	US6475276 Production of elemental thin films using a boron-containing reducing agent
11/05/2002	US6474987 Wafer holder
11/05/2002	US6474700 Gas panel
11/05/2002	US6474570 Flexible nozzle system for gas distribution plate of plasma reaction chamber
11/05/2002	US6474562 Gas injector and gas injection direction adjusting method
11/05/2002	US6474258 Apparatus and method for improving plasma distribution and performance in an inductively coupled plasma
11/05/2002	US6474257 High density plasma chemical vapor deposition chamber
11/05/2002	US6474077 Vapor delivery from a low vapor pressure liquefied compressed gas
11/04/2002	EP1125003A4 Excess cvd reactant control
10/2002
10/31/2002	WO2002086952A1 Mixed-signal semiconductor structure
10/31/2002	WO2002086943A1 Apparatus and method for improving plasma distribution and performance in an inductively coupled plasma
10/31/2002	WO2002086937A1 Dipole ion source
10/31/2002	WO2002086932A1 Magnetic mirror plasma source
10/31/2002	WO2002086193A1 Plasma treatment apparatus
10/31/2002	WO2002086192A1 Use of perfluoroketones as vapor reactor cleaning, etching, and doping gases
10/31/2002	WO2002086191A1 Use of fluorinated ketones as wet cleaning agents for vapor reactors
10/31/2002	WO2002086190A1 Method for preparing thin porous layers of inorganic oxides
10/31/2002	WO2002086189A1 Substituted cycloalkene new copper precursors for chemical vapor deposition of copper metal thin films
10/31/2002	WO2002086185A1 Penning discharge plasma source
10/31/2002	WO2002085809A2 Photo-induced hydrophilic article and method of making same
10/31/2002	WO2002085717A1 Gas-barrier synthetic resin vessel, device for producing the same, and article-received gas-barrier synthetic resin vessel
10/31/2002	WO2002075801A3 Method of fabricating oxides with low defect densities
10/31/2002	WO2002061815A9 A method of manufacturing a semiconductor structure comprising clusters and/or nanocrystals of silicon and a semiconductor structure of this kind
10/31/2002	US20020160627 Method and device for treating and/or coating a surface of an object
10/31/2002	US20020160626 Vaporizing a dialkoxydialkylsilicon for chemical vapor deposition on a semiconductor and introducing oxygen and an inert gas to activate plasma polymerisation; low dielectric constant; humidity and heat resistance
10/31/2002	US20020160622 Methods of heat treatment and heat treatment apparatus for silicon oxide films
10/31/2002	US20020160620 Method for producing coated workpieces, uses and installation for the method
10/31/2002	US20020160605 Method for producing semiconductor crystal
10/31/2002	US20020160585 Thin film deposition method
10/31/2002	US20020160566 Semiconductor integrated circuit device and process for manufacturing the same
10/31/2002	US20020160565 Capacitor for semiconductor devices and a method of fabricating such capacitors
10/31/2002	US20020160553 Method and apparatus for forming a thin semiconductor film, method and apparatus for producing a semiconductor device, and electro-opitcal apparatus
10/31/2002	US20020160542 FeRAM having BLT ferroelectric layer and method for forming the same
10/31/2002	US20020160125 Pulsed plasma processing method and apparatus
10/31/2002	US20020160124 Vacuum processing method
10/31/2002	US20020160113 Deposition chamber and method for depositing low dielectric constant films
10/31/2002	US20020160112 Chemical vapor deposition apparatus and chemical vapor deposition method
10/31/2002	US20020160111 Method for fabrication of field emission devices using carbon nanotube film as a cathode
10/31/2002	US20020159217 Electrostatic chuck and substrate processing apparatus
10/31/2002	US20020158714 Method and system for wafer-level tuning of bulk acoustic wave resonators and filters by reducing thickness non-uniformity
10/31/2002	US20020158258 Buffer layer of light emitting semiconductor device and method of fabricating the same
10/31/2002	US20020157793 Toroidal plasma source for plasma processing
10/31/2002	US20020157688 Method for cleaning a substrate in selective epitaxial growth process
10/31/2002	US20020157687 Method of cleaning a chamber of a CVD machine and elements within
10/31/2002	US20020157611 ALD reactor and method with controlled wall temperature
10/31/2002	US20020157610 Method for forming a copper thin film
10/31/2002	US20020157608 Performance evaluation method for plasma processing apparatus
10/31/2002	DE10123427A1 Coating for the surface of a cutting tool, is a cladding of structured metal components in a thin layer with strong bonding and low abrasion, with increased resistance to corrosion
10/31/2002	DE10121132A1 Verfahren zum Erzeugen einer metallischen oder metallhaltigen Schicht unter Verwendung eines Präkursors auf einer silizium- oder germaniumhaltigen Schicht, insbesondere eines elektronischen Bauelements A method of producing a metallic or metal-containing layer using a precursor on a silicon-or germanium-containing layer, in particular an electronic component
10/30/2002	EP1253630A1 Chemical vapor deposition of silicon oxide films
10/30/2002	EP1253216A1 Method and apparatus for sequential plasma treatment
10/30/2002	EP1253111A1 Flame synthesis and non-vacuum physical evaporation
10/30/2002	EP1252822A2 Microwave CVD method for deposition of robust barrier coatings
10/30/2002	EP1252647A1 Impedance adapted microwave energy coupling device
10/30/2002	EP1252365A1 Method for producing functional layers with a plasma jet source
10/30/2002	EP1252364A1 Apparatus and method for epitaxially processing a substrate
10/30/2002	EP1252363A1 Device and method for depositing one or more layers onto a substrate
10/30/2002	EP1252362A2 Method and device for depositing a precursor on a substrate, said precursor being present in the liquid form
10/30/2002	EP1252361A1 Method of cleaning and conditioning plasma reaction chamber
10/30/2002	EP1252360A2 High yield vapor phase deposition method for large scale single walled carbon nanotube preparation
10/30/2002	EP1252359A1 Improved reactor with heated and textured electrodes and surfaces
10/30/2002	EP1252358A1 System and method for depositing inorganic/organic dielectric films
10/30/2002	EP1251975A2 Protective and/or diffusion barrier layer
10/30/2002	EP1251973A1 Plasma-deposited coatings, devices and methods
10/30/2002	EP1204987A4 Chemical vapor deposition of silicon oxide films using alkylsiloxane oligomers with ozone
10/30/2002	EP1114442B1 Method for reducing particle emission or absorption on a surface
10/30/2002	CN1377568A Multi-zone resistance heater
10/30/2002	CN1377457A Method and apparatus for in-situ monitoring of plasma etch and deposition processes using a pulsed broadband light source
10/30/2002	CN1377246A Cutting blade for a surgical instrument
10/30/2002	CN1377064A Method for forming layer of tungsten silicate
10/30/2002	CN1377060A Process for preparing SiO2 medium film on micron-class strip mesa
10/30/2002	CN1377057A Silicone substrate film, its forming method and photocell
10/30/2002	CN1093568C Method for growth of semispherical silicon crystal
10/30/2002	CN1093453C Manufacture of diamond film cutter and tool
10/29/2002	US6473563 Vaporizer and apparatus for vaporizing and supplying
10/29/2002	US6472756 Method of forming titanium silicide and titanium by chemical vapor deposition and resulting apparatus
10/29/2002	US6472337 Precursors for zirconium and hafnium oxide thin film deposition
10/29/2002	US6472336 Forming an encapsulating layer after deposition of a dielectric comprised of corrosive material
10/29/2002	US6472334 Film forming method, semiconductor device manufacturing method, and semiconductor device
10/29/2002	US6472326 Reliable particle removal following a process chamber wet clean
10/29/2002	US6472323 Method of depositing tungsten nitride using a source gas comprising silicon
10/29/2002	US6472320 Method of producing rough polysilicon by the use of pulsed plasma chemical vapor deposition and products produced by the same
10/29/2002	US6472299 Method and apparatus for treating a substrate with hydrogen radicals at a temperature of less than 40 K
10/29/2002	US6472296 Fabrication of photovoltaic cell by plasma process
10/29/2002	US6472088 A composite comprising a base and a film mainly formed of amorphous titanium oxide (partially has a structure in which a network of titanium-oxygen-titanium bond is broken to give titanium hydroxide bond terminals) on the base
10/29/2002	US6472076 Semiconductor dielectric thin films
10/29/2002	US6472062 Method for making a non-sticking diamond-like nanocomposite
10/29/2002	US6472060 Significantly smaller grain size and concomitant hardness; layer of ti(c,n,o) having a grain size of 25 nm or less; dopant addition of co and/or co2 during nitriding and carbiding; titanium carbonitrides
10/29/2002	US6472057 Vapor deposition at high temperature, high pressure
10/29/2002	US6472018 Diffusion aluminide bondcoat has higher concentration of al and lower concentration of refractory metal at outermost region, abrasion, heat treated to thermally grow a stable alumina layer, ceramic layer; insulation for gas turbine
10/29/2002	US6472017 Method of making coated article including diamond-like carbon (DLC) and FAS
10/29/2002	US6472014 Multilayer protective coatings
10/29/2002	US6471925 Using oxidation catalysts to purging carbon monoxide and ozone obtained from vapor deposition or reactive ion etching, to form carbon dioxide and oxygen; pollution control
10/29/2002	US6471837 Vacuum coating installation and coupling device
10/29/2002	US6471782 Precursor deposition using ultrasonic nebulizer
10/29/2002	US6471781 Method of depositing titanium nitride thin film and CVD deposition apparatus
10/29/2002	US6471780 Process for fabricating films of uniform properties on semiconductor devices

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