C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes

Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
11/2002
11/13/2002	EP1255876A2 Condensation coating method
11/13/2002	CN1379828A Abatement of effluent from chemical vapor deposition processes using ligand exchange resistant metal-organic precursor solutions
11/13/2002	CN1379732A Abatement of effluents from chemical vapor deposition processes using organome tallicsource reagents
11/13/2002	CN1379712A Deposited thin film void-column network materials
11/13/2002	CN1379453A Method suitable for growing zinc sulfide (selenide)-manganese film of broad-band semiconductor
11/13/2002	CN1379439A Plasma treatment
11/13/2002	CN1379437A Manufacturing method of semiconductor device, manufacturing equipment and control method of semiconductor device and control apparatus and semiconductor device
11/13/2002	CN1379121A Method for cleaning gas distributor of chemical gas-phase depositing reaction chamber
11/13/2002	CN1379120A Gas trapping equipment of chemical gas-phase deposition system
11/13/2002	CN1378966A Storage container of liquid high purity substance
11/13/2002	CN1094113C Method of depositing tin oxide and titanium oxide coating on flat glass and resulting coated glass
11/12/2002	US6480074 Method and system for wafer-level tuning of bulk acoustic wave resonators and filters by reducing thickness non-uniformity
11/12/2002	US6479897 Semiconductor device having fluorine-added carbon dielectric film and method of fabricating the same
11/12/2002	US6479835 Radiation image detector
11/12/2002	US6479410 Processing method for object to be processed including a pre-coating step to seal fluorine
11/12/2002	US6479409 Fabrication of a semiconductor device with an interlayer insulating film formed from a plasma devoid of an oxidizing agent
11/12/2002	US6479408 Semiconductor device and method of manufacturing the same
11/12/2002	US6479404 Process for fabricating a semiconductor device having a metal oxide or a metal silicate gate dielectric layer
11/12/2002	US6479373 Method of structuring layers with a polysilicon layer and an overlying metal or metal silicide layer using a three step etching process with fluorine, chlorine, bromine containing gases
11/12/2002	US6479345 Method for manufacturing capacitor in semiconductor device and the capacitor
11/12/2002	US6479304 Iridium composite barrier structure and method for same
11/12/2002	US6479174 Silicon carbide body
11/12/2002	US6479166 Comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress adjacent to one another without an intermediate film or layer
11/12/2002	US6479100 CVD ruthenium seed for CVD ruthenium deposition
11/12/2002	US6479098 Method to solve particle performance of FSG layer by using UFU season film for FSG process
11/12/2002	US6478994 Method for making boron carbide containing ceramics
11/12/2002	US6478923 Vacuum operation apparatus
11/12/2002	US6478877 Gas collector for epitaxial reactors
11/12/2002	US6478872 Method of delivering gas into reaction chamber and shower head used to deliver gas
11/12/2002	US6478843 Anti-adherent coating and method for the production thereof
11/12/2002	US6477980 Flexibly suspended gas distribution manifold for plasma chamber
11/12/2002	CA2254605C Method of preparing porous nickel-aluminum structures
11/11/2002	CA2357237A1 Coal tar and hydrocarbon mixture pitch production using a high efficiency evaporative distillation process
11/07/2002	WO2002089238A2 Abraded fluid diffusion layer for an electrochemical fuel cell
11/07/2002	WO2002089237A2 Method of making fluid diffusion layers and electrodes having reduced surface roughness
11/07/2002	WO2002089228A2 Composite material, methods for the production thereof and its use
11/07/2002	WO2002089223A1 Production method for light emitting element absract:
11/07/2002	WO2002089186A2 Deposition and skipe annealing of tungsten silicide films
11/07/2002	WO2002088692A2 Apparatus for detecting the presence of liquid in a storage container and corresponding method
11/07/2002	WO2002088421A1 Self-renewing coating for plasma enhanced processing systems
11/07/2002	WO2002088420A1 Method and apparatus for sequential plasma treatment
11/07/2002	WO2002088419A1 Method for production of a metallic or metal-containing layer
11/07/2002	WO2002088414A1 Method for producing a coating on a machining tool and a machining tool
11/07/2002	US20020164890 Method of forming silicon containing thin films by atomic layer deposition utilizing s12cl6 and nh3
11/07/2002	US20020164883 Dielectric plates; transmitting microwaves; generating high density plasma
11/07/2002	US20020164863 Plasma enhanced liner
11/07/2002	US20020164429 Methods for forming a low dielectric constant carbon-containing film, and films produced thereby
11/07/2002	US20020164424 Method for fabricating N-type doped polycrystalline silicon
11/07/2002	US20020164423 Plasma vapor deposition; integrated circuits
11/07/2002	US20020164422 Method and device for coating at least one wiper-blade element
11/07/2002	US20020164421 Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
11/07/2002	US20020164420 Overcoating semiconductor substrates; vapor deposition
11/07/2002	US20020164282 Flame synthesis and non-vacuum physical evaporation
11/07/2002	US20020163770 Supercapacitors and method for fabricating the same
11/07/2002	US20020163637 Method for using an in situ particle sensor for monitoring particle performance in plasma deposition processes
11/07/2002	US20020162827 Method for dry cleaning metal etching chamber
11/07/2002	US20020162630 Semiconductor substrate-supporting apparatus
11/07/2002	US20020162507 Self-renewing coating for plasma enhanced processing systems
11/07/2002	US20020162506 Cleaning a semiconductor wafer by mounting on a wafer holding chuck with a rotating motion, a reservoir comprising cleaning chemicals and cylindrical brush
11/07/2002	US20020162505 Method and apparatus for forming insitu boron doped polycrystalline and amorphous silicon films
11/07/2002	US20020162500 Deposition of tungsten silicide films
11/07/2002	CA2446001A1 Abraded fluid diffusion layer for an electrochemical fuel cell
11/07/2002	CA2445996A1 Method of making fluid diffusion layers and electrodes having reduced surface roughness
11/06/2002	EP1255304A2 Photovoltaic element and method of producing same
11/06/2002	EP1254870A2 Photocatalytically active coated substrates
11/06/2002	EP1254867A2 Apparatus comprising a burner for producing silicon dioxide soot
11/06/2002	EP1254845A2 Plastic container coated with carbon film
11/06/2002	EP1254278A2 Method for producing a layer which influences the orientation of liquid crystal and a liquid crystal cell which has at least one layer of this type
11/06/2002	EP1254249A1 Deposited thin films and their use in detection, attachment, and bio-medical applications
11/06/2002	EP1254142A1 Novel aminosilyl borylalkanes, their production and use
11/06/2002	EP1166180A4 Semiconductor wafer processing system with vertically-stacked process chambers and single-axis dual-wafer transfer system
11/06/2002	EP1157143B1 Mt cvd process
11/06/2002	EP1115905B1 Composite material coating and a method for the production thereof
11/06/2002	EP1021588A4 Fluid delivery apparatus and method
11/06/2002	EP0944557B1 Method of depositing tin oxide and titanium oxide coatings on flat glass and the resulting coated glass
11/06/2002	EP0737258B1 Process for deposition of diamondlike, electrically conductive and electron-emissive carbon-based films
11/06/2002	CN1378260A Film thickness monitoring method and substrate temperature detecting method
11/06/2002	CN1378240A Method for producing semiconductor device
11/06/2002	CN1377992A Method for preparing p-type zinc oxide film
11/06/2002	CN1377991A MOCVD equipment and process for growing ZnO film
11/06/2002	CN1377990A Control of abnormal growth in chemical gas phase deposite multiple crystal silicide film based on dichloromethane
11/06/2002	CN1377989A Heating method for preparing metal substrate film
11/06/2002	CN1093854C Method for selective hydrogenation of vinyl oxirane to butylene oxide
11/05/2002	US6476968 Optical element
11/05/2002	US6476247 Processes for the preparation of organoluthenium compounds useful for thin film formation by CVD
11/05/2002	US6475930 UV cure process and tool for low k film formation
11/05/2002	US6475928 Process for depositing a Ta2O5 dielectric layer
11/05/2002	US6475910 Radical-assisted sequential CVD
11/05/2002	US6475902 Chemical vapor deposition of niobium barriers for copper metallization
11/05/2002	US6475854 Method of forming metal electrodes
11/05/2002	US6475814 Method for improved low pressure inductively coupled high density plasma reactor
11/05/2002	US6475813 MOCVD and annealing processes for C-axis oriented ferroelectric thin films
11/05/2002	US6475627 Semiconductor wafer and vapor growth apparatus
11/05/2002	US6475622 Process for forming silicon oxide coating on plastic material
11/05/2002	US6475620 Method for depositing a coating layer on an optical fiber while it is being drawn and device for its implementation
11/05/2002	US6475579 Multi-layer plastic container having a carbon-treated internal surface and method for making the same
11/05/2002	US6475573 Bonding strength
11/05/2002	US6475564 Deposition of a siloxane containing polymer
11/05/2002	US6475563 Container that holds the liquid starting material, pressure reducing means for depressurizing inside the container, heater for boiling; chemical vapor deposition of aluminum films
11/05/2002	US6475359 Thin-film processing electromagnet with modified core for producing low-skew magnetic orientation

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