C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes

Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
11/2002
11/21/2002	US20020173172 Method for producing hydrogenated silicon oxycarbide films having low dielectric constant
11/21/2002	US20020173169 Two-step flourinated-borophosophosilicate glass deposition process
11/21/2002	US20020173167 Methods and apparatus for producing stable low k FSG film for HDP-CVD
11/21/2002	US20020173164 High speed vapor deposition of dielectric; dry etching patterning
11/21/2002	US20020173147 Thin film semiconductor device and method for producing the same
11/21/2002	US20020173130 Vapor deposition using silane and dopant gas mixture; overcoating with dielectrics and electrodes; controlling concentration of gas mixture
11/21/2002	US20020173127 Doped silicon deposition process in resistively heated single wafer chamber
11/21/2002	US20020173126 Barium strontium titanate annealing process
11/21/2002	US20020173125 CVD-SiC self-supporting membrane structure and method for manufacturing the same
11/21/2002	US20020173124 Vapor deposition using light source
11/21/2002	US20020173113 Vapor deposition; doping
11/21/2002	US20020173078 Method and apparatus for manufacturing semiconductor device
11/21/2002	US20020173054 Materials handling; ruthenium complex is adsorbed on substrate and reductive purge gas is injected into chamber
11/21/2002	US20020172938 Adsorbing and non-adsorbing surfaces for biological materials
11/21/2002	US20020172778 Plasma enhanced chemical deposition with low vapor pressure compounds
11/21/2002	US20020172768 Irradiating alternately an organometal compound as a source material and either of oxygen radicals, nitrogen radicals and a mixture of oxygen radicals and nitrogen radicals as an oxidizing or nitriding agent for depositing monoatomic layer
11/21/2002	US20020172766 Using di(formato)dimethylsilane as oganosilicon presursor to produce porous silicon oxycarbide thin film
11/21/2002	US20020172765 Mouth ring for forming a honeycomb-shaped green product, method for fabricating a mouth ring to form a honeycomb-shaped green product and apparatus for fabricating a mouth ring to form a honeycomb-shaped green product
11/21/2002	US20020170883 Prevents crystal original pits effects during particle measurement.
11/21/2002	US20020170679 Susceptor supporting construction
11/21/2002	US20020170676 Segmented electrode apparatus and method for plasma processing
11/21/2002	US20020170674 Continuous processing chamber
11/21/2002	US20020170673 System and method of processing composite substrates within a high throughput reactor
11/21/2002	US20020170671 Processing apparatus, transferring apparatus and transferring method
11/21/2002	US20020170598 Process gas supply mechanism for ALCVD systems
11/21/2002	US20020170498 Chemical vapor deposition apparatus
11/21/2002	US20020170496 Continuous processing apparatus by plasma polymerization with vertical chamber
11/21/2002	US20020170495 Method for fabricating a thin film and apparatus for fabricating a thin film
11/21/2002	US20020170489 Crystal growth method for nitride semiconductor and formation method for semiconductor device
11/21/2002	US20020170487 Pre-coated silicon fixtures used in a high temperature process
11/21/2002	US20020170486 Silicon fixture with roughened surface supporting wafers in chemical vapor deposition
11/21/2002	US20020170484 Method and system for manufacturing III-V Group compound semiconductor and III-V Group compound semiconductor
11/21/2002	DE10130590A1 Composite material used in the production of metal cutting tools consists of a hard metal or cermet substrate body having a specified carbon content covered with a diamond layer
11/21/2002	DE10124609A1 Device for depositing crystalline active layers on crystalline substrates comprises a process chamber arranged in a reaction housing, a gas inlet
11/21/2002	DE10120865A1 Kompositwerkstoff, Verfahren zu dessen Herstellung und dessen Verwendung Composite material, method for its preparation and its use
11/21/2002	CA2446789A1 Coal tar and hydrocarbon mixture pitch and the preparation and use thereof
11/21/2002	CA2415495A1 Silicon oxide film
11/20/2002	EP1258987A2 Method and system for wafer-level tuning of bulk acoustic wave resonators and filters
11/20/2002	EP1258914A1 Heating element cvd device
11/20/2002	EP1258544A1 Compound crystal and method of manufacturing same
11/20/2002	EP1258541A2 Process gas supply for cvd systems
11/20/2002	EP1258234A1 Plastic container for liquid medicine
11/20/2002	EP1257684A1 Method and apparatus for chemical vapor deposition of polysilicon
11/20/2002	EP1257683A1 Method for removing adsorbed molecules from a chamber
11/20/2002	EP1257681A1 Diamond-like carbon film with enhanced adhesion
11/20/2002	EP1025277B1 Vacuum coating installation and coupling device and process for producing work pieces
11/20/2002	EP1011884B1 Extrusion die and its production
11/20/2002	CN1380685A Plasma treatment device and plasma treatment method
11/20/2002	CN1380442A Improved chemical gas phase deposition equipment
11/20/2002	CN1094524C Process for growing aluminium nitride piezoelectric fiml on substrate of high sound velocity material
11/19/2002	US6483137 Ferroelectricity
11/19/2002	US6482754 Method of forming a carbon doped oxide layer on a substrate
11/19/2002	US6482753 Substrate processing apparatus and method for manufacturing semiconductor device
11/19/2002	US6482752 Substrate processing apparatus and method and a manufacturing method of a thin film semiconductor device
11/19/2002	US6482746 Computer readable medium for controlling a method of cleaning a process chamber
11/19/2002	US6482733 Protective layers prior to alternating layer deposition
11/19/2002	US6482649 Acoustic consumption monitor
11/19/2002	US6482477 Method for pretreating dielectric layers to enhance the adhesion of CVD metal layers thereto
11/19/2002	US6482476 Low temperature plasma enhanced CVD ceramic coating process for metal, alloy and ceramic materials
11/19/2002	US6482331 Method for preventing contamination in a plasma process chamber
11/19/2002	US6482266 Metal organic chemical vapor deposition method and apparatus
11/19/2002	US6482262 Deposition of transition metal carbides
11/19/2002	US6481449 Ultrasonic metal finishing
11/19/2002	US6481368 Device and a method for heat treatment of an object in a susceptor
11/19/2002	CA2071147C Gas pyrolysis forming technique of a mostly oxygen and silicon-based coating
11/14/2002	WO2002091448A1 Gaseous phase growing device
11/14/2002	WO2002091447A1 System and method for heat treating semiconductor
11/14/2002	WO2002091446A1 Vacuum treatment method and vacuum treatment device
11/14/2002	WO2002091445A1 Coating agent, plasma-resistant component having coating film formed by the coating agent, plasma processing device provided with the plasma-resistant component
11/14/2002	WO2002090615A1 Duo-step plasma cleaning of chamber residues
11/14/2002	WO2002090614A1 Method for depositing a coating having a relatively high dielectric constant onto a substrate
11/14/2002	WO2002090461A1 Thermal flux regulator
11/14/2002	WO2002075790A3 Method and apparatus for transferring heat from a substrate to a chuck
11/14/2002	WO2001061071B1 Condensation coating method
11/14/2002	WO2001045134A9 Method and apparatus for producing uniform process rates
11/14/2002	US20020170095 Nucleotide sequences coding polypeptide for use in controlling plant propagation and gene expression
11/14/2002	US20020169078 Method for fabricating an yttrium-based high temperature superconducting tape
11/14/2002	US20020168877 Substrate processing apparatus and method of manufacturing semiconductor device
11/14/2002	US20020168868 First and second surfaces with different morphology, adding trisilane to the chamber under chemical vapor depostion, and depositing a silane containing film
11/14/2002	US20020168867 Semiconductor processing component having low surface contaminant concentration
11/14/2002	US20020168866 Method for fabricating a semiconductor device
11/14/2002	US20020168855 Method of fabricating a MOS device
11/14/2002	US20020168854 Prevent formation of reaction by-products at a cooled metal flange, and can allow a maintenance period of an apparatus to become longer
11/14/2002	US20020168840 Reacting tungsten source with silicon source at a temperature greater than about 600 degrees C
11/14/2002	US20020168836 After film (dopant layer) containing doping elements is formed on surface of substrate a vapor phase synthetic diamond film is formed on dopant layer and dopant layer contains diamond particles which become sources of diamond nuclei
11/14/2002	US20020168553 Vapor deposition
11/14/2002	US20020168483 Method for forming film by plasma
11/14/2002	US20020168480 Epoxy molding materials; blend of surface modified silica in epoxy resin
11/14/2002	US20020168468 Diffusion barrier; protective coatings; reacting titanium nitride with organosilicon compound
11/14/2002	US20020168467 Plasma vacuum substrate treatment process and system
11/14/2002	US20020166581 Silicon-based film, formation method therefor and photovoltaic element
11/14/2002	US20020166574 Method and apparatus for cleaning a heater bellow in a chemical vapor deposition chamber
11/14/2002	US20020166509 Film forming device
11/14/2002	US20020166507 Thin film forming apparatus
11/14/2002	US20020166256 Process and apparatus for cleaning a silicon surface
11/13/2002	EP1256978A2 Method of forming low dielectric constant insulation film for semiconductor device
11/13/2002	EP1256973A1 Heating system and method for heating an atmospheric reactor
11/13/2002	EP1256638A2 Thin film including multi components and method of forming the same
11/13/2002	EP1256637A1 Substrate holder
11/13/2002	EP1256125A1 Electron beam modification of cvd deposited films, forming low dielectric constant materials

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