C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes

Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
12/2002
12/04/2002	CN1382830A Process for copper-metallizing of polyimide substrate
12/03/2002	US6489254 Method of forming pre-metal dielectric film on a semiconductor substrate including first layer of undoped oxide of high ozone:TEOS volume ratio and second layer of low ozone doped BPSG
12/03/2002	US6489253 Method of forming a void-free interlayer dielectric (ILD0) for 0.18-μm flash memory technology and semiconductor device thereby formed
12/03/2002	US6489241 Apparatus and method for surface finishing a silicon film
12/03/2002	US6489199 Multiple step methods for forming conformal layers
12/03/2002	US6489035 Printed circuit boards; copper surface stabilization with layer of zinc oxide, chromium oxide or nickel oxide; vapor deposition metal, alloy, nitride, silicide or oxide electrical resistance material
12/03/2002	US6489034 Stabilizing copper surface with layer of zinc oxide, chromium oxide or nickel oxide; vapor depositing aluminum, nickel, chromium, copper, iron, indium, zinc, tantalum, vanadium, tin, tungsten, zirconium and/or molybdenum
12/03/2002	US6488995 High frequency plasma chemical vapor deposition from silicon compound containing raw gas containing; low temperature, high deposition rate; i type layer of pin type solar cell
12/03/2002	US6488807 Magnetic confinement in a plasma reactor having an RF bias electrode
12/03/2002	US6488778 Apparatus and method for controlling wafer environment between thermal clean and thermal processing
12/03/2002	US6488777 Semiconductor vacuum deposition system and method having a reel-to-reel substrate cassette
12/03/2002	US6488776 Method and apparatus for forming insitu boron doped polycrystalline and amorphous silicon films
12/03/2002	US6488775 Semiconductor-manufacturing device
12/03/2002	US6488774 Trap apparatus
12/03/2002	US6488745 Trap apparatus and method for condensable by-products of deposition reactions
12/03/2002	US6488384 Light-reflecting layer, preferably an aluminum layer, and another layer placed between the substrate and the light-reflecting layer, the additional layer, which has a high barrier effect to substances which migrate or evolve
12/03/2002	US6488272 Liquid delivery system emulsifier
12/03/2002	US6487986 Device for the plasma deposition of a polycrystalline diamond
12/03/2002	US6487879 Method of making titania-doped fused silica
11/2002
11/28/2002	WO2002095808A1 Smooth multipart substrate support member for cvd
11/28/2002	WO2002095807A2 Silicon fixtures useful for high temperature wafer processing
11/28/2002	WO2002095804A1 Method and device for the thermal treatment of substrates
11/28/2002	WO2002095803A1 Method and device for thermally treating substrates
11/28/2002	WO2002095087A1 Method and device for vacuum treatment
11/28/2002	WO2002095086A1 Cooling mechanism with coolant, and treatment device with cooling mechanism
11/28/2002	WO2002095085A1 Method for producing a layer with a predefined layer thickness profile
11/28/2002	WO2002094458A2 Method for producing a coated synthetic body
11/28/2002	WO2002094456A1 Fabrication of microdevices for separation of biomolecules in an electrical field
11/28/2002	WO2002094455A1 Process for plasma treatment and apparatus
11/28/2002	WO2002074445A3 Atomizer
11/28/2002	WO2002059333A9 Gene promoters isolated from potato and use thereof
11/28/2002	WO2002020864A3 System and method for depositing high dielectric constant materials and compatible conductive materials
11/28/2002	WO2001022478A9 Semiconductor processing equipment having radiant heated ceramic liner
11/28/2002	US20020177283 Method of forming polycrystalline silicon fo liquid crystal display device
11/28/2002	US20020177244 MFOS memory transistor & method of fabricating same
11/28/2002	US20020177055 Charged particle processing for forming pattern boundaries at a uniform thickness
11/28/2002	US20020177001 Plasma processing container internal member and production method thereof
11/28/2002	US20020176947 Heterogeneous structure from amorphous carbon material with a polymer tendency applied as a coating on a substrate of polymer material
11/28/2002	US20020176942 Method for coating substrates with improved substrate preheating
11/28/2002	US20020176938 Introducing a wafer into a chemical vapor deposition chamber, humidifying helium gas with water, depositing a copper seed layer at a flow rate of 5-20 sccm during temperature rise to 150-230 defrees C
11/28/2002	US20020176937 Densification of porous bodies
11/28/2002	US20020176755 Enhanced A12O3-Ti(C,N) multi-coating deposited at low temperature
11/28/2002	US20020175393 Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same
11/28/2002	US20020175160 Pre-heating and load lock pedestal material for high temperature cvd liquid crystal and flat panel display applications
11/28/2002	US20020175145 Method of forming void-free intermetal dielectrics
11/28/2002	US20020174950 Apparatus for manufacturing a semiconductor device
11/28/2002	US20020174885 Method and apparatus for enhanced chamber cleaning
11/28/2002	DE10141084A1 Apparatus for depositing layers having atomic thickness on a substrate used in the semiconductor industry has a chamber wall arranged between two chamber regions to separate the chamber regions
11/28/2002	DE10138657A1 Carbon/graphite product production, used for, e.g. aircraft brake preform, comprises providing coal tar pitch of specified softening point, providing coke flour, mixing coal tar pitch and coke flour, and extruding mixture
11/28/2002	DE10123858A1 Verfahren zum Bilden von Silicium-haltigen Dünnschichten durch Atomschicht-Abscheidung mittels SI2CL6 und NH3 A method of forming silicon-containing thin films by atomic layer deposition using SI2CL6 and NH3
11/28/2002	DE10119571C1 Verfahren zum gleichmäßigen Beschichten von Hohlkörpern und deren Verwendung A method of uniformly coating of hollow bodies, and their use
11/28/2002	CA2349033A1 Initial plasma treatment for vertical dry etching of sio2
11/27/2002	EP1260616A1 Polycrystalline diamond thin film, photocathode and electron tube using it
11/27/2002	EP1260610A2 High temperature resistant object
11/27/2002	EP1260606A2 Low dielectric constant material and method of processing by cvd
11/27/2002	EP1260357A2 Pyrolytic boron nitride crucible and method
11/27/2002	EP1169489B1 Method for increasing the yield in processes of deposition of thin layers onto a substrate
11/27/2002	EP1091965B1 Precursors for growth of heterometal-oxide films by mocvd
11/27/2002	EP0842307B1 System for the plasma treatment of large area substrates
11/27/2002	EP0773166B1 Diamond-like carbon film-coated plastic container
11/27/2002	CN1382303A Vacuum circuit for device for treating receptacle with low pressure plasma
11/27/2002	CN1381875A Method for making insulation layer and semiconductor device and semiconductor device made by it
11/27/2002	CN1381872A Chemical vapour-phase deposition device and chemical vapour-phase deposition method
11/27/2002	CN1381621A Carbon fibre and composite using carbon fibre
11/27/2002	CN1381609A Gas-phase deposition method for preparing TiO2 gel film
11/27/2002	CN1095096C Light receiving member having surface protectiv layer with specific outermost surface and process for production thereof
11/26/2002	US6486083 Semiconductor device manufacturing method and semiconductor manufacturing apparatus
11/26/2002	US6486082 CVD plasma assisted lower dielectric constant sicoh film
11/26/2002	US6486081 Gas distribution system for a CVD processing chamber
11/26/2002	US6486080 Chemical vapor deposition; reacting a precursor such as metal alkoxide, metal alkoxide containing halogen, metal beta-diketonate, metal oxoacid, metal acetate, or metal alkene with oxidant gas, annealing for densification
11/26/2002	US6486077 Silicon nitride film, semiconductor device, and method for fabricating semiconductor device
11/26/2002	US6486076 Thin film deposition apparatus
11/26/2002	US6486061 Post-deposition treatment to enhance properties of Si-O-C low K films
11/26/2002	US6486047 Using an atomic layer deposition tool; provides structures for insulating film of an NDRO-type ferroelectric memory device that has a structure of Metal-film/Ferroelectric-film/Insulating-film/Silicon
11/26/2002	US6486045 Apparatus and method for forming deposited film
11/26/2002	US6486022 Method of fabricating capacitors
11/26/2002	US6485784 Precursors for the growth of strontium tantalum/niobium oxide films
11/26/2002	US6485783 Chemical vapor deposition system
11/26/2002	US6485615 Process of depositing a coating onto a substrate by reactive sputtering
11/26/2002	US6485604 Substrate processing apparatus
11/26/2002	US6485573 Apparatus for reduced-pressure epitaxial growth and method of controlling the apparatus
11/26/2002	US6485564 Thin film forming method
11/26/2002	US6485554 Solution raw material for forming composite oxide type dielectric thin film and dielectric thin film
11/26/2002	CA2079978C Vapour phase carbon deposition process for metal part surfaces and part thus obtained
11/21/2002	WO2002093635A1 Semiconductor integrated circuit device and production method thereof
11/21/2002	WO2002093632A1 Plasma processing device, and method of cleaning the same
11/21/2002	WO2002093631A1 Plasma processor
11/21/2002	WO2002093630A2 Deposition of tungsten silicide films
11/21/2002	WO2002093628A1 Continuous processing chamber
11/21/2002	WO2002093627A1 Doped silicon deposition process in resistively heated single wafer chamber
11/21/2002	WO2002093623A2 Assembly comprising heat distributing plate and edge support
11/21/2002	WO2002092876A1 Method and device for depositing layers
11/21/2002	WO2002092875A1 Silicon oxide membrane
11/21/2002	WO2002092866A2 Composite material covered with a diamond layer and method for production thereof
11/21/2002	WO2002092728A2 Coal tar and hydrocarbon mixture pitch and the preparation and use thereof
11/21/2002	WO2002092242A1 Selective deposition of materials for the fabrication of interconnects and contacts on semiconductors devices
11/21/2002	WO2002081618A3 Adsorbing and non-adsorbing surfaces for biological materials
11/21/2002	WO2002068127A3 Manifolded fluid delivery system
11/21/2002	WO2002061163A3 Chemical vapor deposition devices and methods
11/21/2002	US20020173250 Superhard material article of manufacture

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