Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
12/2002
12/12/2002US20020185711 Graded composite layer and method for fabrication thereof
12/12/2002US20020185669 Epitaxial ferroelectric thin-film device and method of manufacturing the same
12/12/2002US20020185554 Method for treating a gas dispensing device and device treated
12/12/2002US20020185411 Heating a coal tar pitch having a softening point 70-160 degrees C. to 300-600 degrees C. at a pressure of <5 Torr; withdrawing an output coal tar pitch from said processing vessel having a softening point of 140-300 degrees C.
12/12/2002US20020185374 Method and apparatus for the fabrication of ferroelectric films
12/12/2002US20020185227 Plasma processor method and apparatus
12/12/2002US20020185225 Substrate processing method and substrate processing apparatus
12/12/2002US20020185068 Reactor having a movable shutter
12/12/2002US20020185067 Apparatus and method for in-situ cleaning of a throttle valve in a CVD system
12/12/2002US20020185062 Compact process chamber for improved process uniformity
12/12/2002US20020185060 Apparatus for growing thin films
12/12/2002US20020185058 Single crystal silicon carbide thin film fabrication method and fabrication apparatus of the same
12/12/2002DE10126118A1 Modifizierter DLC-Schichtaufbau Modified DLC layer structure
12/12/2002DE10118242A1 Protective coating, for the inner surface of a hollow container, is through detonation of a gas which contains precursors for the coating material
12/11/2002EP1265274A2 Single crystal silicon carbide thin film fabrication method and fabrication apparatus for the same
12/11/2002EP1265235A2 Phase change of a recording layer under a temporary capping layer
12/11/2002EP1264817A1 $g(b)-DIKETONATOCOPPER(I) COMPLEX CONTAINING ALLENE COMPOUND AS LIGAND AND PROCESS FOR PRODUCING THE SAME
12/11/2002EP1264330A1 Method and device for the plasma-activated surface treatment and use of the inventive method
12/11/2002EP1264329A2 Plasma deposition method and system
12/11/2002EP1264005A1 Plasma polymerization system and method for plasma polymerization
12/11/2002EP1264004A1 Method and device for coating substrates
12/11/2002EP1264003A1 Method for substrate thermal management
12/11/2002EP1264002A1 Gas supply device for precursors with a low vapor pressure
12/11/2002CN1384549A Semiconductor device and complementary semiconductor device
12/11/2002CN1384533A Homogeneity improving method and device for hydride gaseous epitaxially groven GaN material
12/11/2002CN1384221A Film including several components and its forming process
12/10/2002US6493086 Chamber effluent monitoring system and semiconductor processing system comprising absorption spectroscopy measurement system, and methods of use
12/10/2002US6492625 Apparatus and method for controlling temperature uniformity of substrates
12/10/2002US6492621 Hot wall rapid thermal processor
12/10/2002US6492613 System for precision control of the position of an atmospheric plasma
12/10/2002US6492268 Method of forming a copper wiring in a semiconductor device
12/10/2002US6492267 Low temperature nitride used as Cu barrier layer
12/10/2002US6492261 Focused ion beam metal deposition
12/10/2002US6492248 Few-particle-induced low-pressure TEOS process
12/10/2002US6492241 Integrated capacitors fabricated with conductive metal oxides
12/10/2002US6491978 Deposition of CVD layers for copper metallization using novel metal organic chemical vapor deposition (MOCVD) precursors
12/10/2002US6491884 In-situ air oxidation treatment of MOCVD process effluent
12/10/2002US6491758 CVD apparatus equipped with moisture monitoring
12/10/2002US6491757 Wafer support system
12/10/2002US6491742 ESRF coolant degassing process
12/10/2002US6490994 Plasma processing apparatus
12/10/2002US6490993 Rotating device for plasma immersion supported treatment of substrates
12/10/2002CA2220354C Method and apparatus using organic vapor phase deposition for the growth of organic thin films
12/05/2002WO2002097870A2 Diffuser and rapid cycle chamber
12/05/2002WO2002097866A2 Method of etching dielectric materials
12/05/2002WO2002097864A2 Low temperature load and bake
12/05/2002WO2002097158A1 Application of dense plasmas generated at atmospheric pressure for treating gas effluents
12/05/2002WO2002097157A2 Modified diamond-like carbon (dlc) layer structure
12/05/2002WO2002097054A2 Shaped microcomponents via reactive conversion of biologically-derived microtemplates
12/05/2002WO2002096956A1 Continuous processing apparatus by plasma polymerization with vertical chamber
12/05/2002WO2002027060A3 Process chamber lid service system
12/05/2002WO2001050498A9 Linear drive system for use in a plasma processing system
12/05/2002US20020183977 Endpoint detection in substrate fabrication processes
12/05/2002US20020182892 Wafer transfer method performed with vapor thin film growth system and wafer support member used for this method
12/05/2002US20020182888 Apparatus and method for forming an oxynitride insulating layer on a semiconductor wafer
12/05/2002US20020182870 Substrate processing apparatus and a method for fabricating a semiconductor device by using same
12/05/2002US20020182865 Plasma processing apparatus and method for forming thin films using the same
12/05/2002US20020182854 Method of manufacturing a semiconductor device with a contact hole
12/05/2002US20020182845 Method of filling a concave portion with an insulating material
12/05/2002US20020182828 Semiconductor film, semiconductor device and method of their production
12/05/2002US20020182825 Method for improving thickness uniformity of deposited ozone-TEOS silicate glass layers
12/05/2002US20020182451 Controlled conversion of metal oxyfluorides into superconducting oxides
12/05/2002US20020182447 Low friction coating
12/05/2002US20020182423 Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD
12/05/2002US20020182394 Pyrolytic boron nitride crucible and method
12/05/2002US20020182385 Atomic layer passivation
12/05/2002US20020182363 Method to fabricate smooth-surfaced crystalline phase-change layer for atomic resolution storage device
12/05/2002US20020182343 Silicon oxide film, method of forming the silicon oxide film, and apparatus for depositing the silicon oxide film
12/05/2002US20020182342 Plasma enhanced chemical vapor deposition in the presence of reactive gases while controlling the total pressure of the gases; film is then subjected to a low temperature treatment between 400-1200 degrees C. to minimize contaminants
12/05/2002US20020182320 Method for preparing metal nitride thin films
12/05/2002US20020182319 Method for depositing a coating on the wall of metallic containers
12/05/2002US20020182131 Heated catalytic treatment of an effluent gas from a substrate fabrication process
12/05/2002US20020181950 Stop changing device for a camera
12/05/2002US20020180449 Method and apparatus for manufacturing semiconductor device, method and apparatus for controlling the same, and method and apparatus for simulating manufacturing process of semiconductor device
12/05/2002US20020180051 Waterproofing, antisoilant
12/05/2002US20020180045 Deposition method for lead germanate ferroelectric structure with multi-layered electrode
12/05/2002US20020180028 Silicon source reagent compositions, and method of making and using same for microelectronic device structure
12/05/2002US20020179603 Container with a coating of barrier effect material, and method and apparatus for manufacturing the same
12/05/2002US20020179586 Process chamber with rectangular temperature compensation ring
12/05/2002US20020179577 Plasma processing method and apparatus for eliminating damages in a plasma process of a substrate
12/05/2002US20020179248 Integrated circuit fabrication dual plasma process with separate introduction of different gases into gas flow
12/05/2002US20020179247 Nozzle for introduction of reactive species in remote plasma cleaning applications
12/05/2002US20020179014 Replaceable shielding apparatus
12/05/2002US20020179012 Film forming apparatus, electron source manufacturing apparatus, and manufacturing methods using the apparatuses
12/05/2002US20020179011 Gas port sealing for CVD/CVI furnace hearth plates
12/05/2002US20020179010 Apparatus and method for forming deposited film
12/05/2002DE10132882A1 Production of a thin layer comprises charging a stack of substrates into a reactor, introducing a gas containing a reactant and chemically absorbing a part of the reactant
12/04/2002EP1262576A1 CVD Al2O3 coated cutting tool
12/04/2002EP1262575A1 Method and apparatus for heating of substrates
12/04/2002EP1262419A1 Plastic container for dry solid food
12/04/2002EP1261864A2 Fluid handling devices with diamond-like films
12/04/2002EP1261755A1 Device and method for carrying out plasma enhanced surface treatment of substrates in a vacuum
12/04/2002EP1261754A2 Methods for preparing ruthenium metal films
12/04/2002EP1261753A1 Machine for coating hollow bodies
12/04/2002EP1261560A1 Radiation-transmissive films on glass articles
12/04/2002EP1261554A1 MATERIAL FOR SiON-OPTICAL WAVEGUIDES AND METHOD FOR FABRICATING SUCH WAVEGUIDES
12/04/2002EP1226285A4 Single crystal tungsten alloy penetrator and method of making
12/04/2002EP0979316B1 Fluidized bed reactor to deposit a material on a surface by chemical vapour deposition, and methods of forming a coated substrate therewith
12/04/2002EP0848223B1 Vertical heat treatment device
12/04/2002CN1383194A Deposition of silicon oxide film