C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes

Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
12/2002
12/19/2002	US20020192959 III nitride semiconductor substrate for ELO
12/19/2002	US20020192955 Radical-assisted sequential CVD
12/19/2002	US20020192954 Radical-assisted sequential CVD
12/19/2002	US20020192952 Plasma treatment of tantalum nitride compound films formed by chemical vapor deposition
12/19/2002	US20020192951 Method of manufacturing a semiconductor device
12/19/2002	US20020192947 Focused ion beam deposition
12/19/2002	US20020192899 Fabrication method for semiconductor integrated devices
12/19/2002	US20020192898 Field emission device
12/19/2002	US20020192536 Abraded fluid diffusion layer for an electrochemical fuel cell
12/19/2002	US20020192509 Mixed composition interface layer and method of forming
12/19/2002	US20020192480 Members for semiconductor manufacturing apparatus and method for producing the same
12/19/2002	US20020192475 Placing tetraethoxysilane precursor and oxygen in plasma state, decomposing tetraethoxysilane gas into active species, reacting with oxygen ions or radicals in the plasma, depositing active species on substrate
12/19/2002	US20020192395 Composite and manufacturing method therefor
12/19/2002	US20020192394 Thin polycrystalline silicon film forming method and thin film forming apparatus
12/19/2002	US20020192393 Method of depositing optical films
12/19/2002	US20020192377 Gas distribution system
12/19/2002	US20020192376 High efficiency method for performing a chemical vapordeposition utilizing a nonvolatile precursor
12/19/2002	US20020192375 Method and apparatus for vapor generation and film deposition
12/19/2002	US20020192374 Method of forming CVD titanium film
12/19/2002	US20020192373 Method for growing high quality group-III nitride thin film by metal organic chemical vapor deposition
12/19/2002	US20020192372 Organic film vapor deposition method and a scintillator panel
12/19/2002	US20020192371 Low-E coating system including protective DLC
12/19/2002	US20020192370 Deposition reactor having vaporizing, mixing and cleaning capabilities
12/19/2002	US20020192369 Vapor deposition method and apparatus
12/19/2002	US20020192365 Method for imparting hydrophilicity to substrate
12/19/2002	US20020192359 System for automatic control of the wall bombardment to control wall deposition
12/19/2002	US20020190379 W-CVD with fluorine-free tungsten nucleation
12/19/2002	US20020190303 Methods to form rhodium-rich oxygen barriers
12/19/2002	US20020190294 Semiconductor device having a thin film capacitor and method for fabricating the same
12/19/2002	US20020190275 III nitride film and a III nitride multilayer
12/19/2002	US20020190223 Organic film vapor deposition method and a scintillator panel
12/19/2002	US20020190051 Low profile thick film heaters in multi-slot bake chamber
12/19/2002	US20020190024 Etching method and cleaning method of chemical vapor growth apparatus
12/19/2002	US20020189931 Forming a polymer with hydrophilicity or hydrophobicity on a surface of a material using direct current or radio frequecy discharge plasma
12/19/2002	US20020189762 Semiconductor decive fabricating equipment using radio frequency energy
12/19/2002	US20020189759 Method and apparatus for controlling the temperature of a gas distribution plate in a process reactor
12/19/2002	US20020189709 Bulk chemical delivery system
12/19/2002	US20020189636 Introducing a halogen containing cleaning gas to the process chamber via a section connected to the process chamber; and applying a high power density light beam, which assists dissociation of cleaning gas to acheive cleaning activity
12/19/2002	US20020189545 Heating element cvd system
12/18/2002	EP1267393A2 Group III nitride semiconductor substrate for epitaxial lateral overgrowth (ELO)
12/18/2002	EP1266979A2 Amorphous carbon coated tool and fabrication method thereof
12/18/2002	EP1266054A2 Graded thin films
12/18/2002	EP1266046A1 Method and implementing device for a chemical reaction
12/18/2002	EP1266045A1 Diamond-like glass thin films
12/18/2002	EP1266044A2 Nickel vapour deposition manufacture of aircraft engine parts
12/18/2002	EP1266043A2 Cemented carbide tool and method of making
12/18/2002	EP1027482A4 Apparatus and method for the in-situ generation of dopants
12/18/2002	EP0840551B1 Microwave cvd method for deposition of robust barrier coatings
12/18/2002	CN1386299A Cleaning gas for semiconductor production equipment
12/18/2002	CN1096504C Liquid methyltin halide compositions
12/17/2002	US6495850 Method for reading a radiation image that has been stored in a photostimulable screen
12/17/2002	US6495477 Method for forming a nitridized interface on a semiconductor substrate
12/17/2002	US6495473 Substrate processing apparatus and method of manufacturing semiconductor device
12/17/2002	US6495459 Metal precursor comprises a metal coordinated with at least one Lewis base to form a complex, and also a stoichiometric excess of Lewis base, such as carbon monoxide or ammonia
12/17/2002	US6495458 Method for producing low carbon/oxygen conductive layers
12/17/2002	US6495457 Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organic precursor compounds
12/17/2002	US6495414 Forming a laminated structure composed of a TiON film and a doped silicon film for an upper electrode on the crystallized TaON thin film; depletion of oxygen and a leakage current in a dielectric film can be suppressed.
12/17/2002	US6495378 Ferroelastic lead germanate thin film and deposition method
12/17/2002	US6495271 Spallation-resistant protective layer on high performance alloys
12/17/2002	US6495233 Apparatus for distributing gases in a chemical vapor deposition system
12/17/2002	US6495226 Plastic container having a carbon-treated internal surface
12/17/2002	US6495208 Near-room temperature CVD synthesis of organic polymer/oxide dielectric nanocomposites
12/17/2002	US6495054 Etching method and cleaning method of chemical vapor growth apparatus
12/17/2002	US6494959 Process and apparatus for cleaning a silicon surface
12/17/2002	US6494958 Plasma chamber support with coupled electrode
12/17/2002	US6494957 Vaporizing apparatus
12/17/2002	US6494955 Ceramic substrate support
12/17/2002	US6494100 Circuit and apparatus for verifying a chamber seal, and method of depositing a material onto a substrate using the same
12/12/2002	WO2002099910A1 Atmospheric pressure cvd grown lithium ion-conducting electrolyte
12/12/2002	WO2002099868A1 Method of fabricating semiconductor device
12/12/2002	WO2002099861A1 Rector having a movale shuter
12/12/2002	WO2002099160A1 Gas port sealing for cvd/cvi furnace hearth plates
12/12/2002	WO2002086937B1 Dipole ion source
12/12/2002	WO2002069371A3 SOURCE REAGENT COMPOSITION FOR CVD FORMATION OF Zr/Hf DOPED GATE DIELECTRIC AND HIGH DIELECTRIC CONSTANT METAL OXIDE THIN FILMS AND METHOD OF USING SAME
12/12/2002	WO2002067770A3 Implantable device using ultra-nanocrystalline diamond
12/12/2002	WO2002061807A3 Method and system for rotating a semiconductor wafer in processing chambers
12/12/2002	WO2001085364A9 Combinatorial synthesis of material chips
12/12/2002	US20020188376 Preheating of chemical vapor deposition precursors
12/12/2002	US20020188145 Trialkyl Group VA metal compounds
12/12/2002	US20020187656 Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD
12/12/2002	US20020187655 HDP-CVD deposition process for filling high aspect ratio gaps
12/12/2002	US20020187654 Methods and apparatus for forming a high dielectric film and the dielectric film formed thereby
12/12/2002	US20020187649 Method for producing thin film
12/12/2002	US20020187644 Vapor deposition using organometallic or organosilicon compound
12/12/2002	US20020187635 Cu film deposition equipment of semiconductor device
12/12/2002	US20020187631 Copper interconnect structure having stuffed diffusion barrier
12/12/2002	US20020187605 Multiple deposition of metal layers for the fabrication of an upper capacitor electrode of a trench capacitor
12/12/2002	US20020187578 Method for manufacturing memory device
12/12/2002	US20020187388 Method of making fluid diffusion layers and electrodes having reduced surface roughness
12/12/2002	US20020187371 Plasma vapor deposition
12/12/2002	US20020187356 Reducing stresses; noncracking; semiconductor
12/12/2002	US20020187349 Diamond-like carbon coating for optical media molds
12/12/2002	US20020187327 Overcoating interior passageway with protective coating; gas turbine engines
12/12/2002	US20020187312 Matrix-free desorption ionization mass spectrometry using tailored morphology layer devices
12/12/2002	US20020187280 Method and system for reducing damage to substrates during plasma processing with a resonator source
12/12/2002	US20020187262 Purge heater design and process development for the improvement of low k film properties
12/12/2002	US20020187261 Using an Atomic Layer Deposition
12/12/2002	US20020187256 Atomic Layer Deposition using a boron compound as a reducing agent.
12/12/2002	US20020187084 Such (reagent) gases discharged from atomic layer deposition (ALD), by contacting the reagent gases with a "sacrificial" material having a high surface area kept under the same reaction conditions
12/12/2002	US20020186018 Apparatus and method for measuring substrate biasing during plasma processing of a substrate

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