Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
12/2002
12/31/2002US6500771 Method of high-density plasma boron-containing silicate glass film deposition
12/31/2002US6500761 Method for improving the adhesion and durability of CVD tantalum and tantalum nitride modulated films by plasma treatment
12/31/2002US6500752 Semiconductor device and semiconductor device manufacturing method
12/31/2002US6500742 Construction of a film on a semiconductor wafer
12/31/2002US6500734 Gas inlets for wafer processing chamber
12/31/2002US6500686 Hot plate and method of manufacturing semiconductor device
12/31/2002US6500678 Methods of preventing reduction of IrOx during PZT formation by metalorganic chemical vapor deposition or other processing
12/31/2002US6500501 Chemical vapor deposition process for depositing titanium silicide films from an organometallic compound
12/31/2002US6500500 Method for forming a deposited film by plasma chemical vapor deposition
12/31/2002US6500499 Chemical vapor deposition from metal precursors such as alkyls, alkoxides, halides, hydrides, amides, imides, azides, cyclopentadienyls, carbonyls, carboxylates, thiolates, nitrates, phosphates, diketonates and an oxygen source
12/31/2002US6500489 Chemical vapor deposition of bismuth oxide, strontium oxide and tantalum oxide from the metal alkoxides
12/31/2002US6500488 Improving nucleation, growth, adhesion and oxidation resistance of polycrystalline diamond on such as cemented carbide without pretreating by incorporation of fluorine
12/31/2002US6500487 Abatement of effluent from chemical vapor deposition processes using ligand exchange resistant metal-organic precursor solutions
12/31/2002US6500350 Formation of thin film resistors
12/31/2002US6500299 Chamber having improved gas feed-through and method
12/31/2002US6500266 Heater temperature uniformity qualification tool
12/31/2002US6500265 Apparatus for electrostatically maintaining subtrate flatness
12/31/2002US6500263 Semiconductor substrate processing chamber having interchangeable lids actuating plural gas interlock levels
12/31/2002US6500250 Organometallic complexes
12/31/2002US6499427 Plasma CVD apparatus
12/31/2002US6499426 System and method for coating non-planar surfaces of objects with diamond film
12/31/2002US6499425 Quasi-remote plasma processing method and apparatus
12/27/2002WO2002103782A2 Barrier enhancement process for copper interconnects
12/27/2002WO2002103781A1 Wafer supporter
12/27/2002WO2002103079A1 Plasma cvd apparatus
12/27/2002WO2002102903A2 Direct synthesis and deposition of luminescent films
12/27/2002WO2002102712A1 Ceramic and method for preparation thereof, and dielectric capacitor, semiconductor and element
12/27/2002WO2002102709A1 Ceramics film and production method therefor, and ferroelectric capacitor, semiconductor device, other elements
12/27/2002WO2002090615A9 Duo-step plasma cleaning of chamber residues
12/27/2002WO2002085809A3 Photo-induced hydrophilic article and method of making same
12/27/2002WO2002076727A3 Corrosion-stable laminate, method for the production thereof, and its use
12/27/2002WO2002058858A9 Non-plasma $m(f)i$m(g)in situ$m(f)/i$m(g) cleaning of processing chambers using static flow methods
12/27/2002WO2002047120A3 Cooling gas delivery system for a rotatable semiconductor substrate support assembly
12/27/2002WO2002036511A3 Method of depositing dlc inclusive coating system on substrate including step of heating substrate during ion beam deposition of dlc inclusive coating system
12/26/2002US20020197890 Semiconductor device manufacturing method and semiconductor manufacturing apparatus
12/26/2002US20020197878 Film forming method and film forming apparatus
12/26/2002US20020197870 High speed stripping for damaged photoresist
12/26/2002US20020197864 Radical-assisted sequential CVD
12/26/2002US20020197863 System and method to form a composite film stack utilizing sequential deposition techniques
12/26/2002US20020197854 Selective deposition of materials for the fabrication of interconnects and contacts on semiconductor devices
12/26/2002US20020197851 Focused ion beam deposition
12/26/2002US20020197849 Very low dielectric constant plasma-enhanced CVD films
12/26/2002US20020197831 comprising forming a protective film on a surface of a lower-layer interconnection, forming a multilayer-structured film by stacking two porous films, two non-porous films on a surface of the protective film , and forming a via hole
12/26/2002US20020197830 Method and apparatus for producing group III nitride compound semiconductor
12/26/2002US20020197828 Method and apparatus for manufacturing a semiconductor device and processing a substrate
12/26/2002US20020197814 Process for low temperature atomic layer deposition of Rh
12/26/2002US20020197793 Low thermal budget metal oxide deposition for capacitor structures
12/26/2002US20020197785 Process for manufacturing a semiconductor device
12/26/2002US20020197760 Substrate processing apparatus and method and a manufacturing method of a thin film semiconductor device
12/26/2002US20020197417 Method for producing DNA chip, and DNA chip obtained thereby
12/26/2002US20020197416 Gas jet deposition with multiple ports
12/26/2002US20020197403 Methods for chemical vapor deposition of titanium-silicon-nitrogen films
12/26/2002US20020197402 System for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
12/26/2002US20020197145 Substrate processing apparatus and a method for fabricating a semiconductor device by using same
12/26/2002US20020196591 Method of depositing thin films for magnetic heads
12/26/2002US20020196531 Amplifier gain error
12/26/2002US20020195950 Barrier coatings produced by atmospheric glow discharge
12/26/2002US20020195929 Method of making full color display panels
12/26/2002US20020195710 Preheating of chemical vapor deposition precursors
12/26/2002US20020195438 Method for substrate thermal management
12/26/2002US20020195202 Electrode member for plasma treating apparatus, plasma treating apparatus and plasma treating method
12/26/2002US20020195201 Apparatus and method for thermally isolating a heat chamber
12/26/2002US20020195124 Cleaning apparatus of a high density plasma chemical vapor deposition chamber and cleaning method thereof
12/26/2002US20020195058 Apparatus for holding a wafer for use in a process chamber for fabricating a semiconductor device
12/26/2002US20020195056 Versatile atomic layer deposition apparatus
12/26/2002US20020195055 Vortex based CVD reactor
12/26/2002US20020195054 Method and apparatus for depositing semiconductor film and method for fabricating semiconductor device
12/25/2002CN2527572Y Multilayer helerogenous epitaxial growth film on silicon base universal liner
12/25/2002CN1387673A Method and apparatus for supercritical processing of multiple workpieces
12/25/2002CN1387233A Method and system for mfg. group III-V compound semiconductor, and group III-V compound semiconductor
12/25/2002CN1386899A In-situ hot-wire chemical gas-phase deposition process for preparing MgB2 superconductor film
12/25/2002CN1386898A Horizontal reacting furnace for mfg. semiconductor compound
12/25/2002CN1386897A Superthin diamond X-ray without winow supporter and its preparing process
12/25/2002CN1386701A Process for preparing carbon nano-tube film on stainless steel substrate
12/25/2002CN1097316C Process for preparing thin-film transistor, process for preparing active matrix substrate, and liquid crystal display
12/25/2002CN1097308C Process for producing semiconductor device having hemispherical grains
12/25/2002CN1097300C Method for making semiconductor device, display device and electronic apparatus
12/25/2002CN1097037C Method for chemical vapour infiltration and composite material, brake block and prothesis obtained thereby
12/24/2002US6498898 Uniform heat trace and secondary containment for delivery lines for processing system
12/24/2002US6498112 Graded oxide caps on low dielectric constant (low K) chemical vapor deposition (CVD) films
12/24/2002US6498104 Method of in-situ cleaning for LPCVD TEOS pump
12/24/2002US6497963 Silicon oxycarbides and films having low dielectric constants and heat resistance, used as joints in integrated circuit chips
12/24/2002US6497767 Thermal processing unit for single substrate
12/19/2002WO2002101821A1 Method for manufacture of semiconductor integrated circuit device
12/19/2002WO2002101805A1 Thin film forming apparatus cleaning method
12/19/2002WO2002101784A1 Plasma processor
12/19/2002WO2002101114A1 Mocvd method for tungsten deposition
12/19/2002WO2002100797A1 Method for densification and anticorrosive treatment of a thermostructural composite material
12/19/2002WO2002100612A2 Ultrasonic cutting tool coated by diamond cvd
12/19/2002WO2002095085A8 Method for producing a layer with a predefined layer thickness profile
12/19/2002WO2002086932B1 Magnetic mirror plasma source
12/19/2002WO2002079537A3 W-cvd with fluorine-free tungsten nucleation
12/19/2002WO2002078040A3 Neutral particle beam processing apparatus
12/19/2002WO2001073883A9 Low-temperature fabrication of thin-film energy-storage devices
12/19/2002WO2001073868A9 Device enclosures and devices with integrated battery
12/19/2002US20020193034 Method of processing substrate, method of forming film, and method and apparatus for manufacturing electron source
12/19/2002US20020192984 Method for manufacturing semiconductor device, method for processing substrate, and substrate processing apparatus
12/19/2002US20020192982 Introducing into chemical vapor deposition apparatus precursor gas having formula (CH3)xSi(OCH3)4-x; simultaneously introducing a background gas, oxygen and nitrogen; operating apparatus to cause a carbon doped oxide layer to form
12/19/2002US20020192980 Methods for forming low-k dielectric films
12/19/2002US20020192972 Plasma processing