Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
01/2003
01/07/2003US6504983 Optical waveguide and method for fabricating the same
01/07/2003US6504294 Method and apparatus for deposition of diamond-like carbon and silicon-doped diamond-like carbon coatings from a hall-current ion source
01/07/2003US6504228 Semiconductor device and method for manufacturing the same
01/07/2003US6504169 Method for reading a radiation image that has been stored in a photostimulable screen
01/07/2003US6504015 Tetrahydrofuran-adducted group II β-diketonate complexes as source reagents for chemical vapor deposition
01/07/2003US6503843 Multistep chamber cleaning and film deposition process using a remote plasma that also enhances film gap fill
01/07/2003US6503832 Application of controlling gas valves to reduce particles from CVD process
01/07/2003US6503816 Thin film formation by inductively-coupled plasma CVD process
01/07/2003US6503810 Forming storage electrode on semiconductor wafer; nitriding;overcoating with dielectric
01/07/2003US6503579 Plasma CVD method, plasma CVD apparatus, and electrode
01/07/2003US6503563 Method of producing polycrystalline silicon for semiconductors from saline gas
01/07/2003US6503562 Semiconductor fabrication apparatus and fabrication method thereof
01/07/2003US6503561 Liquid precursor mixtures for deposition of multicomponent metal containing materials
01/07/2003US6503557 Process for depositing at least one thin layer based on silicon nitride or oxynitride on a transparent substrate
01/07/2003US6503379 Mobile plating system and method
01/07/2003US6503375 Electroplating apparatus using a perforated phosphorus doped consumable anode
01/07/2003US6503368 Substrate support having bonded sections and method
01/07/2003US6503366 Chemical plasma cathode
01/07/2003US6503347 Surface alloyed high temperature alloys
01/07/2003US6503330 Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition
01/07/2003US6503314 A ferroelectric and dielectric source solution for use in chemical vapor deposition processes includes a ferroelectric/dielectric chemical vapor deposition precursor; and a solvent for carrying the ferroelectric dielectric
01/07/2003US6503079 Substrate processing apparatus and method for manufacturing semiconductor device
01/07/2003US6502530 Design of gas injection for the electrode in a capacitively coupled RF plasma reactor
01/07/2003US6502529 Chamber having improved gas energizer and method
01/07/2003CA2206217C Nickel carbonyl vapour deposition process
01/03/2003WO2003001598A1 Method of making full color display panels
01/03/2003WO2003001590A2 System and method to form a composite film stack utilizing sequential deposition techniques
01/03/2003WO2003001557A1 Electrode member for plasma treating apparatus, plasma treating apparatus and plasma treating method
01/03/2003WO2003001307A1 Safety network system, safety slave, and communication method
01/03/2003WO2003000964A1 METHOD FOR PREPARING GaN BASED COMPOUND SEMICONDUCTOR CRYSTAL
01/03/2003WO2003000952A1 Gas jet deposition apparatus
01/03/2003WO2003000951A1 Grain oriented electric sheet of metal with an electrically insulating coating
01/03/2003WO2003000559A1 Manufacturing device for dlc film coated plastic container, dlc film coated plastic container, and method of manufacturing the dlc film coated plastic container
01/03/2003WO2003000558A1 Moisture and gas barrier plastic container with partition plates, and device and method for manufacturing the plastic container
01/03/2003WO2002077312A3 Method for increasing compression stress or reducing internal tension stress of a layer
01/03/2003WO2002045128A3 Zirconium-doped bst materials and mocvd process for forming same
01/03/2003WO2002043125A3 Ald method to improve surface coverage
01/02/2003US20030003771 Use of a silicon carbide adhesion promoter layer to enhance the adhesion of silicon nitride to low-k fluorinated amorphous carbon
01/02/2003US20030003770 Method for removing foreign matter, method for forming film, semiconductor device and film forming apparatus
01/02/2003US20030003768 Cvd plasma assisted lower dielectric constant sicoh film
01/02/2003US20030003730 Sequential pulse deposition
01/02/2003US20030003729 Method of forming metal wiring and semiconductor manufacturing apparatus for forming metal wiring
01/02/2003US20030003722 Chemical vapor deposition systems including metal complexes with chelating O- and/or N-donor ligands
01/02/2003US20030003696 Method and apparatus for tuning a plurality of processing chambers
01/02/2003US20030003649 Method for forming a capacitor of a semiconductor device
01/02/2003US20030003635 Atomic layer deposition for fabricating thin films
01/02/2003US20030003621 Integrated capacitors fabricated with conductive metal oxides
01/02/2003US20030003604 Method for removing foreign matter, method for forming film, semiconductor device and film forming apparatus
01/02/2003US20030003244 Staggered in-situ deposition and etching of a dielectric layer for HDP CVD
01/02/2003US20030003243 Method for forming film
01/02/2003US20030003230 Method for manufacturing thin film
01/02/2003US20030001528 Ion implanting system
01/02/2003US20030001498 Polycrystal diamond thin film and photocathode and electron tube using the same
01/02/2003US20030001160 Semiconductor wafer and production method therefor
01/02/2003US20030001134 Cleaning gasses and etching gases
01/02/2003US20030000924 Apparatus and method of gas injection sequencing
01/02/2003US20030000921 Mask repair with electron beam-induced chemical etching
01/02/2003US20030000827 System for chemical vapor deposition at ambient temperature using electron cyclotron resonance and method for depositing metal composite film using the same
01/02/2003US20030000825 Plasma polymerization enhancement of surface of metal for use in refrigerating and air conditioning
01/02/2003US20030000648 Process chamber used in manufacture of semiconductor device, capable of reducing contamination by particulates
01/02/2003US20030000647 Substrate processing chamber
01/02/2003US20030000546 Plasma cleaning of deposition chamber residues using duo-step wafer-less auto clean method
01/02/2003US20030000545 Method for cleaning and preconditioning a chemical vapor deposition chamber dome
01/02/2003US20030000476 Substrate processing apparatus, conveying unit thereof, and semiconductor device fabricating Method
01/02/2003US20030000473 Method of delivering gas into reaction chamber and shower head used to deliver gas
01/02/2003US20030000472 Vacuum plate having a symmetrical air-load block
01/02/2003US20030000471 Method and apparatus for manufacturing semiconductor devices
01/02/2003US20030000470 Method and device for forming required gas atmosphere
01/02/2003US20030000469 Chemical enhancer treatment chamber and a Cu, thin film deposition apparatus of a semiconductor device using the same
01/02/2003US20030000467 Microwave plasma film-forming apparatus for forming diamond film
01/02/2003US20030000459 Process chamber used in manufacture of semiconductor device, capable of reducing contamination by particulates
01/02/2003EP1271666A2 Oxide superconductor layer and its production method
01/02/2003EP1271634A2 Methods for forming low-K dielectric films
01/02/2003EP1271607A2 Chemical vapor deposition apparatus and method
01/02/2003EP1271252A2 Process and apparatus for manufacturing electrophotographic photosensitive member
01/02/2003EP1270763A1 Exhaust pipe with reactive by-product adhesion preventing means and method of preventing the adhesion
01/02/2003EP1270762A1 PECVD of optical quality silica films
01/02/2003EP1270761A1 Method for preparing zinc oxide semi-conductor material
01/02/2003EP1270525A1 Devices for handling of liquids comprising biomolecules
01/02/2003EP1269528A1 Method of forming a dielectric film
01/02/2003EP1269526A2 Method for depositing polycrystalline sige suitable for micromachining and devices obtained thereof
01/02/2003EP1269258A1 Organic polymeric antireflective coatings deposited by chemical vapor deposition
01/02/2003EP1269225A1 Selective deposition of material on a substrate according to an interference pattern
01/02/2003EP1268879A1 Supplying and exhausting system in plasma polymerizing apparatus
01/02/2003EP1268878A1 Substrate body coated with multiple layers and method for the production thereof
01/02/2003EP1268877A2 Visibly marked parts and method for using same
01/02/2003EP1268876A1 Method for producing a polycrystalline diamond element and element produced according to said method
01/02/2003EP1268875A2 Method and apparatus for reducing contamination in a loadlock
01/02/2003EP1268186A1 Chemical vapor deposition method and coatings produced therefrom
01/02/2003EP1268039A2 Chamber cleaning mechanism
01/02/2003EP1192294B1 Chamber for chemical vapour deposition
01/02/2003EP0862664B1 Method and apparatus for the deposition of parylene af4 onto semiconductor wafers
01/02/2003EP0764221B1 Apparatus for deposition of thin-film solid state batteries
01/02/2003EP0724772B1 Electric lamp coated with an interference film
01/01/2003CN1388796A Method for imparting hydrophilicity to substrate
01/01/2003CN1097491C Plasma processing method and method for cleaning plasma processing system
12/2002
12/31/2002US6501088 Method and apparatus for reading a radiation image that has been stored in a photostimulable screen
12/31/2002US6500774 Method and apparatus for an increased throughput furnace nitride BARC process
12/31/2002US6500773 Positioning substrate in deposition chamber, providing gas mixture comprising phenyl-based alkoxysilane compound and specified organosilane compound, reacting gas mixture to form organosilicate thin film on substrate
12/31/2002US6500772 Methods and materials for depositing films on semiconductor substrates