Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
01/2003
01/29/2003EP1088116B1 Method for applying a coating system to surfaces
01/29/2003EP0933803B1 Method of plasma treatment
01/29/2003CN1393907A Method and apparatus for mfg. single crystal silicon carbide
01/29/2003CN1100163C Cold cathode structure of diamond film and its preparing process
01/29/2003CN1100162C Alpha-SiCOF film as insulating medium with low dielectric constant and its preparing process
01/28/2003US6512885 Liquid raw material vaporizer, semiconductor device and method of manufacturing semiconductor device
01/28/2003US6512667 Supercapacitor using iron oxide as active material of electrodes formed on current collector which is portion of peripheral surface of case, chassis, compartment, cover, frame or housing of appliance or vehicle
01/28/2003US6512297 Liquid chemical vapor deposition source material including at least one organometallic compound of platinum group metal dissolved in tetrahydrofuran and having moisture content of not more than 200 ppm
01/28/2003US6512240 Method and apparatus for reading a radiation image that has been stored in a photostimulable screen
01/28/2003US6511924 Method of forming a silicon oxide layer on a substrate
01/28/2003US6511922 Methods and apparatus for producing stable low k FSG film for HDP-CVD
01/28/2003US6511909 Method of depositing a low K dielectric with organo silane
01/28/2003US6511903 Method of depositing a low k dielectric with organo silane
01/28/2003US6511875 Method for making high K dielectric gate for semiconductor device
01/28/2003US6511760 Applying corrosion protective coating; dehydrating and evacuating container; completely covering surface by multiple cycles of heat and pressure reduction of silicon hydride while preventing formation of silicon dust
01/28/2003US6511718 Method and apparatus for fabrication of thin films by chemical vapor deposition
01/28/2003US6511717 Method for coating substrates with improved substrate preheating
01/28/2003US6511706 MOCVD of SBT using tetrahydrofuran-based solvent system for precursor delivery
01/28/2003US6511700 Chemical vapor deposition of thin or thick film directly or as freestanding film on a substrate for later joining to tool stick
01/28/2003US6511577 Reduced impedance chamber
01/28/2003US6511575 Treatment apparatus and method utilizing negative hydrogen ion
01/28/2003US6511539 Apparatus and method for growth of a thin film
01/28/2003US6510888 Substrate support and method of fabricating the same
01/23/2003WO2003007661A1 Ceramic heater and ceramic joined article
01/23/2003WO2003007339A2 Use of deuterated gases for the vapor deposition of thin films for low-loss optical devices and waveguides
01/23/2003WO2003006933A2 System and method for detecting occlusions in a semiconductor manufacturing device
01/23/2003WO2003006707A1 Method for bst deposition by cvd
01/23/2003WO2003006706A1 Method for making diamond-coated composite materials
01/23/2003WO2003006393A1 Visible-light-responsive photoactive coating, coated article, and method of making same
01/23/2003WO2003006218A1 Cutting member with dual profile tip
01/23/2003WO2002035265A3 Using deuterated source gases to fabricate low loss germanium-doped silicon oxy nitride (gestion-sion)
01/23/2003WO2002029861A3 System architecture of semiconductor manufacturing equipment
01/23/2003US20030017684 Method of producing doped polysilicon layers and polysilicon layered structures
01/23/2003US20030017666 Integrated structure comprising a patterned feature substantially of single grain polysilicon
01/23/2003US20030017633 Semiconductor light emitting device and method of fabricating semiconductor light emitting device
01/23/2003US20030017359 Increased stability low concentration gases, products comprising same, and methods of making same
01/23/2003US20030017339 Method for coating ceramic discs and ceramic disc obtained by said method
01/23/2003US20030017297 Panel display device and method for forming protective layer within the same
01/23/2003US20030017268 .method of cvd titanium nitride film deposition for increased titanium nitride film uniformity
01/23/2003US20030017267 Controlling phosphorous dopant deposition profile and/or distance of the phosphorus dopant from nitride surface in order to reduce the silicon nitride layer consumption
01/23/2003US20030017266 Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer
01/23/2003US20030017265 Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers
01/23/2003US20030017087 Process and apparatus for abatement of by products generated from deposition processes and cleaning of deposition chambers
01/23/2003US20030016035 Direct detection of dielectric etch system magnet driver and coil malfunctions
01/23/2003US20030015719 Zinc oxide semiconductor member formed on silicon substrate
01/23/2003US20030015570 Method of joining different metal materials by friction welding
01/23/2003US20030015293 Apparatus for plasma treatment
01/23/2003US20030015292 Apparatus for fabricating a semiconductor device
01/23/2003US20030015291 Semiconductor device fabrication apparatus having multi-hole angled gas injection system
01/23/2003US20030015288 Sealable surface method and device
01/23/2003US20030015287 Inner wall protection member for chamber and plasma procressing apparatus
01/23/2003US20030015142 Apparatus for fabricating a semiconductor device
01/23/2003US20030015141 Wafer supporting device in semiconductor manufacturing device
01/23/2003US20030015138 Substrate processing apparatus and method for manufacturing semiconductor device
01/23/2003US20030015137 Chemical vapor deposition apparatus and chemical vapor deposition method
01/23/2003US20030015136 Workpiece support
01/23/2003CA2453934A1 Method for making diamond-coated composite materials
01/22/2003EP1278244A2 Panel display device and method for forming protective layer within the same
01/22/2003EP1277718A2 Method for coating ceramic discs and ceramic disc obtained by said method
01/22/2003EP1277716A1 Method for fabricating ceramic matrix composite
01/22/2003EP1277233A2 Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module
01/22/2003EP1060301B1 Ceiling arrangement for an epitaxial growth reactor
01/22/2003EP0871796B1 Coated milling insert and method of making it
01/22/2003CN1392595A Chemical vapor deposition equipment and chemical vapor deposition method
01/22/2003CN1392288A Method for forming silicon containing film by using tri(dimethylamino) silicane atomic shell deposition
01/22/2003CN1392285A PCVO plasma impregnation composite reinforced method for precise vane hot forging die
01/21/2003US6509542 Voltage control sensor and control interface for radio frequency power regulation in a plasma reactor
01/21/2003US6509282 Silicon-starved PECVD method for metal gate electrode dielectric spacer
01/21/2003US6509280 Method for forming a dielectric layer of a semiconductor device
01/21/2003US6509268 Thermal densification in the early stages of copper MOCVD for depositing high quality Cu films with good adhesion and trench filling characteristics
01/21/2003US6509239 Method of fabricating a field effect transistor
01/21/2003US6509227 Formation of conductive rugged silicon
01/21/2003US6509124 Method of producing diamond film for lithography
01/21/2003US6509067 Conveying substrate at uniform velocity
01/21/2003US6508990 In situ monitoring and controlling removal of contaminants from semiconductor surface using infrared radiation
01/21/2003US6508911 Diamond coated parts in a plasma reactor
01/21/2003US6508885 Edge sealing structure for substrate in low-pressure processing environment
01/21/2003US6508883 Throughput enhancement for single wafer reactor
01/21/2003US6508197 Apparatus for dispensing gas for fabricating substrates
01/16/2003WO2003005432A1 Method and apparatus for forming film having low dielectric constant, and electronic device using the film
01/16/2003WO2003005429A1 Method for preparing low dielectric films
01/16/2003WO2003005428A1 Method and apparatus for removing a reaction by-product in the semiconductor and the liquid crystal display manufactured field
01/16/2003WO2003005427A1 Processing system and cleaning method
01/16/2003WO2003005396A2 Method and apparatus for scanned instrument calibration
01/16/2003WO2003004724A1 Cvd system comprising a thermally differentiated substrate support
01/16/2003WO2003004723A1 Source chemical container assembly
01/16/2003WO2003004722A1 Method for cleaning reaction container and film deposition system
01/16/2003WO2003004721A1 Feed material for chemical vapor deposition and process for producing ceramic from the same
01/16/2003WO2002074445A8 Atomizer
01/16/2003WO2002058115A3 Method for deposit copper on metal films
01/16/2003WO2002056348A3 Method for incorporating silicon into cvd metal films
01/16/2003WO2002048434A3 Gallium nitride materials and methods for forming layers thereof
01/16/2003US20030013320 Method of forming a thin film using atomic layer deposition
01/16/2003US20030013315 Process chamber used in manufacture of semiconductor device, capable of reducing contamination by particulates
01/16/2003US20030013300 Method and apparatus for depositing tungsten after surface treatment to improve film characteristics
01/16/2003US20030013280 Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device
01/16/2003US20030013212 System and method for removing deposited material from within a semiconductor fabrication device
01/16/2003US20030012890 Method for producing a plasma by microwave irradiation
01/16/2003US20030012877 Reacting a silicon-containing compound and a compound containing peroxide bonding to deposit a short-chain polysiloxane on the surface of the semiconductor substrate.
01/16/2003US20030012875 CVD BST film composition and property control with thickness below 200 A for DRAM capacitor application with size at 0.1mum or below