Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
02/2003
02/18/2003US6521544 Method of forming an ultra thin dielectric film
02/18/2003US6521349 Tool with a molybdenum sulfide coating and method for producing the same
02/18/2003US6521302 Method of reducing plasma-induced damage
02/18/2003US6521295 Uniform, vaporized reactant mixture containing an organotin compound, an organoantimony compound, water and oxygen
02/18/2003US6521292 JMF type wafers
02/18/2003US6521291 Process for the production of improved boron coatings
02/18/2003US6521149 Solid chemical vapor deposition diamond microchannel plate
02/18/2003US6521081 Deposition shield for a plasma reactor
02/18/2003US6521048 For delivering gases to a substrate or wafer for processing of said substrate or wafer; vapor deposition
02/18/2003US6521047 Process and apparatus for liquid delivery into a chemical vapor deposition chamber
02/18/2003US6520650 Lamp reflector with a barrier coating of a plasma polymer
02/18/2003US6520189 CVD apparatus
02/17/2003CA2398085A1 Process and device for coating silicon carbide fibres
02/13/2003WO2003012849A1 Heat treatment apparatus
02/13/2003WO2003012843A1 Method and apparatus for cleaning and method and apparatus for etching
02/13/2003WO2003012841A2 Semiconductor structures and devices not lattice matched to the substrate
02/13/2003WO2003012840A2 Method and device for the production of thin epiatctic semiconductor layers
02/13/2003WO2003012835A2 Substrate support and method of fabricating the same
02/13/2003WO2003012165A1 Gas treating device and gas treating method
02/13/2003WO2003012164A1 Method for the production of coated substrates
02/13/2003WO2003012163A2 Integral blocks, chemical delivery systems and methods for delivering an ultrapure chemical
02/13/2003WO2003012162A1 Electrochemically roughened aluminum semiconductor processing apparatus surfaces
02/13/2003WO2003011696A1 Device for forming carbon film on inner surface of plastic vessel, and method of producing inner surface carbon film coated plastic vessel
02/13/2003WO2002097054A3 Shaped microcomponents via reactive conversion of biologically-derived microtemplates
02/13/2003WO2002054484A3 Metal ion diffusion barrier layers
02/13/2003US20030033116 Method for characterizing the performance of an electrostatic chuck
02/13/2003US20030032306 Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications
02/13/2003US20030032305 Method of depositing low dielectric constant carbon doped silicon oxide
02/13/2003US20030032301 Showerhead electrode design for semiconductor processing reactor
02/13/2003US20030032289 Solution also containing an ester
02/13/2003US20030032283 Preheating of chemical vapor deposition precursors
02/13/2003US20030032282 Barrier layer deposition using HDP-CVD
02/13/2003US20030032281 Graded thin films
02/13/2003US20030032265 Novel hot-filament chemical vapor deposition chamber and process with multiple gas inlets
02/13/2003US20030032235 Method of manufacturing high dielectric constant material
02/13/2003US20030032234 Semiconductor integrated circuit device and method of manufacturing the same
02/13/2003US20030031974 Heating furnace and semiconductor wafer-holding jig assembly and process of manufacturing semiconductor devices
02/13/2003US20030031957 Depositing an antireflective compound in a layer on said substrate surface by chemical vapor deposition; and applying a photoresist layer to said antireflective compound layer to yield the circuit precursor.
02/13/2003US20030031807 Deposition of transition metal carbides
02/13/2003US20030031794 Method of forming titanium film by CVD
02/13/2003US20030031793 Substrate is subjected to one or more reaction cycles of an organometallic gas precursor and an oxidizing gas to the heated substrate such as semiconductor wafer
02/13/2003US20030031792 Plasma enhanced chemical vapor deposition (PECVD); by depositing a conductive layer onto a top surface of a susceptor support plate within a deposition chamber to dissipate electrostatic charge on bottom of the substrate
02/13/2003US20030031791 Exposing high-purity copper to a plasma of a chlorine gas to etch the high-purity copper, and form copper chlorides, transporting said copper chlorides onto the surface of a substrate to be coated; efficiency, purity
02/13/2003US20030031790 Method of forming highly adhesive copper thin films on metal nitride substrates via CVD
02/13/2003US20030031787 Chemisorption; for production of integrated circuits and semiconductor wafers
02/13/2003US20030030961 Method and apparatus for chucking a substrate
02/13/2003US20030030082 Method of forming an ultra thin dielectric film and a semiconductor device incorporating the same
02/13/2003US20030030057 Silicon carbide deposition for use as a low-dielectric constant anti-reflective coating
02/13/2003US20030029715 An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
02/13/2003US20030029610 Thermally conductive chuck for vacuum processor
02/13/2003US20030029571 Self-centering wafer support system
02/13/2003US20030029569 Substrate processing apparatus
02/13/2003US20030029566 Remote exposure of workpieces using a plasma
02/13/2003US20030029565 Method and apparatus for processing semiconductor substrates
02/13/2003US20030029563 Corrosion resistant coating for semiconductor processing chamber
02/13/2003US20030029475 Multistep remote plasma clean process
02/13/2003US20030029473 Chamber cleaning via rapid thermal process during a cleaning period
02/13/2003US20030029384 Rotating susceptor and method of processing substrates
02/13/2003US20030029381 Vertical chemical vapor deposition system
02/13/2003DE20217306U1 Light plate made from transparent material used in an illuminating device, especially a vehicle head lamp, is provided with a silicon hydroxide hydrophilic layer
02/12/2003EP1283613A1 Receiver and inverse-spreading code generating method
02/12/2003EP1283544A2 Reaction chamber for processing semiconducter wafers
02/12/2003EP1283279A2 Modular injector and exhaust assembly
02/12/2003EP1133499B1 Complex compound of an element of sub-group iv or v
02/12/2003CN1397151A Plasma processing system and method
02/12/2003CN1396638A Method for dipositing high-dielectric constant material on chip using atomic layer diposition method
02/12/2003CN1396636A Process for depositing film on surface of semiconductor chip
02/12/2003CN1396042A Adhesive film recovery device and method
02/12/2003CN1101287C Cutting tool blade and its preparation method
02/11/2003US6518775 At least one variable capacitor is placed between the heater and the showerhead, such that the spacing between the heater and the showerhead is in a predetermined relationship to the capacitance of the variable capacitor. Then, the capacitance
02/11/2003US6518626 Method of forming low dielectric silicon oxynitride spacer films highly selective of etchants
02/11/2003US6518610 Rhodium-rich oxygen barriers
02/11/2003US6518203 Passivating dielectric layer with activated nitrogen atoms, then forming metal nitride film on the nitrogen passivated dielectric layer
02/11/2003US6518200 Graded composite layer and method for fabrication thereof
02/11/2003US6518195 Plasma reactor using inductive RF coupling, and processes
02/11/2003US6518193 Substrate processing system
02/11/2003US6518170 Multilayer dielectric
02/11/2003US6518168 Self-assembled monolayer directed patterning of surfaces
02/11/2003US6518117 Methods of forming nitrogen-containing masses, silicon nitride layers, and capacitor constructions
02/11/2003US6517913 Pumping etching exhaust gases from processing chamber to fluid conduit containing oxidizing agent; forming a plasma for conversion to less hazardous gaseous products and byproducts
02/11/2003US6517908 Method for making a test wafer from a substrate
02/11/2003US6517763 Scale of optical wavelengths; by the self-assembly of spheres, followed by one or more structure modification, infiltration, and extraction processes; eliminating the coloration; heating above the melting point
02/11/2003US6517691 Substrate processing system
02/11/2003US6517688 Using electric arc plating device; applying negative bias voltage
02/11/2003US6517687 Ultraviolet filters with enhanced weatherability and method of making
02/11/2003US6517670 Etching and cleaning apparatus
02/11/2003US6517634 Chemical vapor deposition chamber lid assembly
02/11/2003US6517616 Solvated ruthenium precursors for direct liquid injection of ruthenium and ruthenium oxide
02/11/2003US6517592 For semiconductor processing chamber comprising a conduit for exhaust gases having at least one heater and one temperature sensor attached thereto and a cold trap connected to conduit
02/11/2003US6517249 Bearing with amorphous boron carbide coating
02/11/2003US6516742 Apparatus for improved low pressure inductively coupled high density plasma reactor
02/11/2003CA2178805C A method of densifying porous substrates by chemical vapor infiltration of silicon carbide
02/06/2003WO2003010809A1 Plasma treating device and substrate mounting table
02/06/2003WO2003010804A1 Method of producing semiconductor thin film, method of producing semiconductor device, semiconductor device, integrated circuit, electrooptical device and electronic apparatus
02/06/2003WO2003010800A1 Processing apparatus and processing method
02/06/2003WO2003010355A1 Method for cvd of bpsg films
02/06/2003WO2003010354A2 Reactive polymer coatings
02/06/2003WO2002084710A3 Systems and methods for epitaxially depositing films
02/06/2003WO2002069380A3 Atomically thin highly resistive barrier layer in a copper via
02/06/2003WO2002059936A3 Resistive heaters and uses thereof