Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
02/2003
02/27/2003US20030038112 Optical monitoring and control system and method for plasma reactors
02/27/2003US20030038082 Process for the purification of organometallic compounds or heteroatomic organic compounds with hydrogenated getter alloys
02/27/2003US20030037883 Substrate support with gas feed-through and method
02/27/2003US20030037879 Top gas feed lid for semiconductor processing chamber
02/27/2003US20030037836 Automatic refill system for ultra pure or contamination sensitive chemicals
02/27/2003US20030037802 Semiconductor treating apparatus and cleaning method of the same
02/27/2003US20030037731 Apparatus of manufacturing a semiconductor device
02/27/2003US20030037730 Processing system, evacuating system for processing system, low-pressure CVD system, and evacuating system and trapping device for low-pressure CVD system
02/27/2003US20030037729 Modular injector and exhaust assembly
02/27/2003US20030037723 High throughput epitaxial growth by chemical vapor deposition
02/27/2003US20030037722 Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device
02/26/2003EP1286391A1 Method and apparatus for chucking a substrate
02/26/2003EP1286386A1 Thin film transistor fabrication method
02/26/2003EP1286298A2 Fingerprint detection device and method of its manufacture, and apparatus for forming a protective film
02/26/2003EP1286184A2 Half mirror film producing method and optical element comprising a half mirror film
02/26/2003EP1285977A2 Apparatus and method for insulating a seal in a process chamber
02/26/2003EP1285976A2 Hardware assembly for cvi/cvd processes
02/26/2003EP1285900A2 Method and device for coating silicon carbide fibers
02/26/2003EP1284806A1 Gas cabinet assembly comprising sorbent-based gas storage and delivery system
02/26/2003EP0966409B1 Photocatalytically-activated self-cleaning article and method of making same
02/26/2003EP0689618B1 Method and apparatus for the combustion chemical vapor deposition of films and coatings
02/26/2003CN1399790A Method and apparatus for supercritical processing of multiple workpieces
02/26/2003CN1399502A Plate display and its protecting layer forming process
02/26/2003CN1399006A Prepn of solution maghesium source
02/26/2003CN1398807A Glass with plated zinc oxide film
02/25/2003US6525365 Dielectric films and capacitor structures including same
02/25/2003US6524976 Method of heat-treating nitride compound semiconductor layer and method of producing semiconductor device
02/25/2003US6524975 Combined gate cap or digit line and spacer deposition using HDP
02/25/2003US6524972 Method for forming an interlayer insulating film, and semiconductor device
02/25/2003US6524969 High density plasma chemical vapor deposition (HDP-CVD) processing of gallium arsenide wafers
02/25/2003US6524967 Method for incorporating nitrogen into a dielectric layer using a special precursor
02/25/2003US6524955 Method of forming thin film onto semiconductor substrate
02/25/2003US6524867 Flowing oxidizer while depositing a first layer of platinum-rhodium alloy on substrate; flowing reducer while depositing second layer of platinum-rhodium alloy on first layer; flowing second oxidizer while forming third alloy layer
02/25/2003US6524650 Outside air and a gas-phase backward flow do not enter the inside of a reaction chamber while it is opened to the outside through a substrate carrying-in/carrying-out opening
02/25/2003US6524448 Vapor deposition using electrical fields (magnets) for angular distribution of ionized particles
02/25/2003US6524432 Parallel-plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
02/25/2003US6524402 Vapor depositing protective coating from silicon compound; corrosion and oxidation resistance
02/25/2003US6524363 Heat treatment of tungsten, cobalt carbide; surface roughness
02/25/2003US6523563 Apparatus for providing facilities gas lines to at least one processing chamber, comprising: a rack having an upper air duct and a lower air duct; at least one modular gas control panel comprising at least one gas control device;
02/25/2003US6523494 Apparatus for depositing low dielectric constant oxide film
02/25/2003US6523493 Ring-shaped high-density plasma source and method
02/25/2003US6523382 Free wheeling lock assembly
02/20/2003WO2003015481A2 Suspended gas distribution manifold for plasma chamber
02/20/2003WO2003015184A1 Diamond high brightness ultraviolet ray emitting element
02/20/2003WO2003015136A2 Method and apparatus for vacuum pumping a susceptor shaft
02/20/2003WO2003015133A2 Showerhead electrode design for semiconductor processing reactor
02/20/2003WO2003015130A2 Integrated system for oxide etching and metal liner deposition
02/20/2003WO2003015129A2 Low-k dielectric thin films and chemical vapor deposition method of making same
02/20/2003WO2003015122A1 Device for the coating of objects
02/20/2003WO2003014415A1 Composite material made from a substrate material and a barrier layer material
02/20/2003WO2003014414A1 Rotating susceptor and method of processing substrates
02/20/2003WO2003014412A1 Method and device for the coating and blow moulding of a body
02/20/2003WO2003014411A1 Rapid cycle chamber having a top vent with nitrogen purge
02/20/2003WO2003001590A3 System and method to form a composite film stack utilizing sequential deposition techniques
02/20/2003WO2002100612A3 Ultrasonic cutting tool coated by diamond cvd
02/20/2003WO2002088692A3 Apparatus for detecting the presence of liquid in a storage container and corresponding method
02/20/2003WO2002082511A3 Pedestal assembly with enhanced thermal conductivity
02/20/2003WO2002081788A9 Method for h2 recycling in semiconductor processing system
02/20/2003WO2002041355A3 Plasma processing comprising three rotational motions of an article being processed
02/20/2003WO2002031839A9 N-type doping of nanocrystalline diamond films with nitrogen and electrodes made therefrom
02/20/2003WO2001073883A3 Low-temperature fabrication of thin-film energy-storage devices
02/20/2003US20030036471 The opaque, low resistivity silicon carbide is doped with a sufficient amount of nitrogen to provide the desired properties; product may be machined to form furniture used for holding semi-conductor wafers during processing
02/20/2003US20030036272 Semiconductor device fabrication chamber cleaning method and apparatus with recirculation of cleaning gas
02/20/2003US20030036268 Low temperature load and bake
02/20/2003US20030036243 Dielectric capacitor manufacturing method and semiconductor storage device manufacturing method
02/20/2003US20030036242 Methods of forming metal-comprising materials and capacitor electrodes; and capacitor constructions
02/20/2003US20030036216 Method of depositing silicon thin film and silicon thin film solar cell
02/20/2003US20030036210 Methods of forming capacitor constructions
02/20/2003US20030035905 Carbon nitride coating for optical media discs
02/20/2003US20030035902 Via spraying titanium-based alloy plasma generated in microwave- or radiowave-transparent working tube via ignition of process gas (electrode-free, high-pressure)
02/20/2003US20030035893 Chemical vapor infiltration/deposition (CVI/CVD) by flowing a reactant gas through the center opening of a porous stack and around the exterior; densification of carbon-fiber disc brakes using a hydrocarbon gas; uniformity; microstructure quality
02/20/2003US20030035891 Forming a silicon carbide-fixed coating layer on the surface of ceramic parts, e.g. of, preferably, silcon carbide, to be joined, by chemical vapor deposition; semiconductor jigs e.g., a wafer boat or plasma etching device
02/20/2003US20030035890 Pyrolysis of a chlorinated organotin derivative and a poly-fluoro- and/or a halo polyfluoroalkane; contacting the vapor phase with a hot substrate; thin films; nontoxic; pollution control; visible light transmission; glass substrate
02/20/2003US20030035884 Controlling film deposition in a single-wafer, rapid thermal reactor to form a film of uniform thickness by identifying a growth-rate-limiting reactant; calculating a dilution factor and adjusting the film growth rate
02/20/2003US20030035763 Process for the purification of organometallic compounds or heteroatomic organic compounds with a catalyst based on iron and manganese supported on zeolites
02/20/2003US20030034523 Semiconductor thin-film manufacturing method, semiconductor device manufacturing method, semiconductor device, integrated circuit, electro-optical device, and electronic appliance
02/20/2003US20030034053 Processing and cleaning method
02/20/2003US20030033984 Heated gas line body feedthrough for vapor and gas delivery systems and methods of employing same
02/20/2003US20030033982 Chemical vapor deposition system
02/20/2003US20030033980 CVD apparatuses and methods of forming a layer over a semiconductor substrate
02/20/2003US20030033979 Process chamber having multiple gas distributors and method
02/20/2003US20030033978 High termperature filter
02/20/2003US20030033974 Layered substrates for epitaxial processing, and device
02/20/2003US20030033973 Ammonia for use in manufacture of gan-type compound semiconductor and method for manufacturing gan-type compound semiconductor
02/20/2003US20030033834 Method of depositing a cladding layer
02/19/2003EP1284500A2 Semiconductor device and method of manufacturing the same
02/19/2003EP1284305A2 Copper film vapor phase deposition method and apparatus
02/19/2003EP1283819A1 Method of making a titania-doped fused silica preform
02/19/2003EP1208245B1 Plasma activated cvd method and device for producing a microcristalline si:h layer
02/19/2003EP1002141B1 Component with high temperature resistance and method for producing an anti-oxidation element
02/19/2003EP0946959B1 Diamond fim deposition method
02/19/2003CN2536599Y Vertical multi-layer ceramic film depositors
02/19/2003CN1398305A Method for forming thin film, article having thin film, optical film, dielectric coated electrode, and plasma discharge processor
02/19/2003CN1397991A Sprayer of water processing equipment with gap controller
02/19/2003CN1397755A Gas transportation metering tube
02/19/2003CN1397663A Driver of pulse power supply for plasma aided chemical gas-phase deposition apparatus
02/19/2003CN1397662A Modularized eductor and discharging device
02/18/2003US6521770 Reaction product of organozirconium compound and diketone compound
02/18/2003US6521550 Process for manufacturing semiconductor integrated circuit device including treatment of gas used in the process
02/18/2003US6521546 Forming hardmask by applying electric field to fluoro-organosilane and oxidizing gas