Patents
Sitemap › C23 - Coating metallic material; Coating material with metallic material; Chemical surface treatment; Diffusion treatment of metallic material; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general; Inhibiting corrosion of metallic material or incrustation in general › C23C - Coating metallic material; Coating material with metallic material; Surface treatment of metallic material by diffusion into the surface, by chemical conversion or substitution; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general › C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes
Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
03/2003
03/25/2003US6537422 Single-substrate-heat-processing apparatus for semiconductor process
03/25/2003US6537420 Method and apparatus for restricting process fluid flow within a showerhead assembly
03/25/2003US6537419 Gas distribution plate assembly for providing laminar gas flow across the surface of a substrate
03/25/2003US6537353 Abatement of effluents from chemical vapor deposition processes using organometallic source reagents
03/25/2003US6537012 Vacuum processing apparatus and a vacuum processing system
03/20/2003WO2003023880A2 Thin-film electrochemical devices on fibrous or ribbon-like substrates and method for their manufacture and design
03/20/2003WO2003023842A1 Method and apparatus for forming low permittivity film and electronic device using the film
03/20/2003WO2003023835A1 Plasma enhanced atomic layer deposition (peald) equipment and method of forming a conducting thin film using the same thereof
03/20/2003WO2003023093A2 Susceptor with epitaxial growth control devices and epitaxial reactor using the same
03/20/2003WO2003023085A1 Spiral gas flow plasma reactor
03/20/2003WO2003008666B1 Electrostatic chuck with dielectric coating
03/20/2003WO2003002456A3 Method for the selective production of ordered carbon nanotubes in a fluidised bed
03/20/2003WO2002069065A3 Flow controller
03/20/2003WO2002017359B1 High carrier concentration p-type transparent conducting oxide films
03/20/2003WO2002012587A3 Processing apparatus and cleaning method
03/20/2003US20030054671 Method for forming insulation film and method for manufacturing semiconductor device
03/20/2003US20030054667 Method of improving moisture resistance of low dielectric constant films
03/20/2003US20030054666 Silicone polymer insulation film on semiconductor substrate
03/20/2003US20030054657 Semiconductor manufacturing apparatus
03/20/2003US20030054638 Isolation of the cis and trans isomers of tris(2,4-octadion-ato)ruthenium using liquid chromatography with adsorption by alumina; solvent elution; purity; electrodes; smooth surface; consistant morphology; high density; capacitors etc,
03/20/2003US20030054636 Method for manufacturing a semiconductor device and method for processing substrate
03/20/2003US20030054631 Protective layers prior to alternating layer deposition
03/20/2003US20030054606 Low temperature vapor deposition; integrated circuits, semiconductors
03/20/2003US20030054159 Coated body with nanocrystalline CVD coating for enhanced edge toughness and reduced friction
03/20/2003US20030054115 Ultraviolet curing process for porous low-K materials
03/20/2003US20030054102 Reacting a organometallic compound and organosilicon compound dissolving in solvent; vapor deposition
03/20/2003US20030054101 Method and apparatus for preparing alpha-dialuminum trioxide nanotemplates
03/20/2003US20030054099 Condensation coating process
03/20/2003US20030053893 Performing sequential processes in a highly clean surface condition while preventing a deterioration of throughput or an increase in cost; substrates simultaneously transferred in one batch process; thin films of oxides, nitrides or metals
03/20/2003US20030053799 Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition
03/20/2003US20030053784 Optical and optoelectronic articles
03/20/2003US20030052392 Support for microelectronic, microoptoelectronic or micromechanical devices
03/20/2003US20030052376 Semiconductor device with high-k dielectric layer and method for manufacturing the same
03/20/2003US20030052374 Semiconductor device and method for fabricating the same
03/20/2003US20030052356 Platinum-rhodium stack as an oxygen barrier in an integrated circuit capacitor
03/20/2003US20030052083 Treatment and evaluation of a substrate processing chamber
03/20/2003US20030052011 Plasma electroplating
03/20/2003US20030051811 Plasma resistant member
03/20/2003US20030051666 Impedance adapted microwave energy coupling device
03/20/2003US20030051665 High temperature ceramic heater assembly with rf capability
03/20/2003US20030051664 Apparatus for the synthesis of layers, coatings or films
03/20/2003US20030051662 Thermal reactor for transport polymerization of low epsilon thin film
03/20/2003DE20121634U1 Multiple chamber plant used for degassing, coating or etching substrates comprises an evacuating system connected to chambers
03/19/2003EP1293588A1 Plasma cvd apparatus and method
03/19/2003EP1293509A2 Ruthenium complex, process for producing the same and process for producing thin film
03/19/2003EP1292992A2 Methods for forming rough ruthenium-containing layers and structures/methods using same
03/19/2003EP1292970A1 Thin film forming method
03/19/2003EP1292726A1 Single crystal diamond prepared by cvd
03/19/2003EP1292720A2 Surface alloyed high temperature alloys
03/19/2003EP1292390A2 Apparatus and process for plasma treatment of particulate matter
03/19/2003EP1097111B1 Heating a substrate support in a substrate handling chamber
03/19/2003EP1060288B1 Pcvd apparatus and a method of manufacturing an optical fiber, a preform rod and a jacket tube as well as the optical fiber manufactured therewith
03/19/2003EP1044288B1 Method for forming a three-component nitride film containing metal and silicon
03/19/2003EP1036209B1 PROCESS FOR PREPARING A LiMO2 TYPE HETEROMETALLIC OXIDE FILM
03/19/2003EP0797838B1 Method and apparatus for plasma processing
03/19/2003CN1404584A Organic polymeric antireflective coatings deposited by chemical vapor deposition
03/19/2003CN1404456A Plastic container for dry solid food
03/19/2003CN1404381A Plastic container for liquid medicine
03/19/2003CN1403627A High-density plasma chemical vapour-phase deposition equipment
03/19/2003CN1403626A Vacuum exhaust system and monitoring and controlling method thereof
03/19/2003CN1403625A Combined microwave plasma exciter
03/19/2003CN1403214A Decision system during dry cleaning for semiconductor manufacture equipment, dry cleaning method and dry cleaning system
03/19/2003CN1103382C Plasma chemical vapour phase deposition apparatus
03/19/2003CN1103381C Coated cutter
03/18/2003US6535288 Machine readable code to trigger data collection
03/18/2003US6534749 Thermal process apparatus for measuring accurate temperature by a radiation thermometer
03/18/2003US6534616 Precursors for making low dielectric constant materials with improved thermal stability
03/18/2003US6534424 Method of forming silicon nitride on a substrate
03/18/2003US6534423 Use of inductively-coupled plasma in plasma-enhanced chemical vapor deposition reactor to improve film-to-wall adhesion following in-situ plasma clean
03/18/2003US6534409 Silicon oxide co-deposition/etching process
03/18/2003US6534400 Method for depositing a tungsten silicide layer
03/18/2003US6534395 Method of forming graded thin films using alternating pulses of vapor phase reactants
03/18/2003US6534334 Method of manufacturing a non-single-crystal thin film solar cell
03/18/2003US6534133 Methodology for in-situ doping of aluminum coatings
03/18/2003US6534131 Method for treating carbon film, carbon film and component with carbon film
03/18/2003US6534007 Optoelectronic detector; completion of plasma cleaning chemical vapor deposition chamber
03/18/2003US6533910 Carbonitride coated component of semiconductor processing equipment and method of manufacturing thereof
03/18/2003US6533894 RF powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition
03/18/2003US6533869 Apparatus and method for making free standing diamond
03/18/2003US6533867 Surface sealing showerhead for vapor deposition reactor having integrated flow diverters
03/18/2003US6533534 Manufacturing flat active display screens by increased rate of plasma enhanced chemical vapor deposition method and thereby lowering for coating treatment exposure to ion impact
03/18/2003US6532796 Method of substrate temperature control and method of assessing substrate temperature controllability
03/13/2003WO2003021690A2 Method of depositing an oxide layer on a substrate and a photovoltaic cell using said substrate
03/13/2003WO2003021653A1 Plasma cleaning gas and plasma cleaning method
03/13/2003WO2003021650A1 Film forming method
03/13/2003WO2003021649A1 Apparatus and method for producing semiconductor device, and method for cleaning semiconductor producing apparatus
03/13/2003WO2003021647A1 Heat treatment device, and heat treatment method
03/13/2003WO2003021646A1 Treatment system
03/13/2003WO2003021644A1 Chamber shields for a plasma chamber
03/13/2003WO2003021003A1 Reduction of electrostatic charge on a substrate during pecvd process
03/13/2003WO2003020997A1 Coated multiphase bodies
03/13/2003WO2003020497A1 Free-standing (al, ga, in)n and parting method for forming same
03/13/2003WO2003020449A1 System for removing deposited material from within a semiconductor fabrication device
03/13/2003WO2002092866A3 Composite material covered with a diamond layer and method for production thereof
03/13/2003WO2002080260A9 Deposition method, deposition apparatus, insulating film and semiconductor integrated circuit
03/13/2003WO2002061787A3 Method and apparatus having pin electrode for surface treatment using capillary discharge plasma
03/13/2003WO2002058112A3 Copper diffusion barriers
03/13/2003WO2002054467A3 Semiconductor structure including a monocrystalline conducting layer
03/13/2003WO2002043119A3 An ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device, a method for fabricating the same, and an electronic device containing the same
03/13/2003WO2002019366A3 Cold cathode ion beam deposition apparatus with segregated gas flow
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