Patents
Sitemap › C23 - Coating metallic material; Coating material with metallic material; Chemical surface treatment; Diffusion treatment of metallic material; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general; Inhibiting corrosion of metallic material or incrustation in general › C23C - Coating metallic material; Coating material with metallic material; Surface treatment of metallic material by diffusion into the surface, by chemical conversion or substitution; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general › C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes
Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
04/2003
04/02/2003CN1407604A Gasification supplying method
04/02/2003CN1407591A Method and apparatus for absorbing matrix
04/02/2003CN1407135A Surface treatment devices
04/02/2003CN1407131A Film forming method, optical film, polarized film and image display method
04/02/2003CN1406694A Surface coated super hard alloy cutting device
04/02/2003CN1104511C Temp. controlling method and apparatus for plasma processing chamber
04/01/2003US6541401 Wafer pretreatment to decrease rate of silicon dioxide deposition on silicon nitride compared to silicon substrate
04/01/2003US6541400 Process for CVD deposition of fluorinated silicon glass layer on semiconductor wafer
04/01/2003US6541399 SABPSG process real temperature monitor
04/01/2003US6541398 Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device containing the same
04/01/2003US6541369 Method and apparatus for reducing fixed charges in a semiconductor device
04/01/2003US6541367 Very low dielectric constant plasma-enhanced CVD films
04/01/2003US6541344 Substrate processing apparatus and semiconductor device manufacturing method
04/01/2003US6541331 Method of manufacturing high dielectric constant material
04/01/2003US6541282 Plasma processes for depositing low dielectric constant films
04/01/2003US6541278 Method of forming film for semiconductor device with supercritical fluid
04/01/2003US6541067 Tricarbonyl(1,2,3,4- eta )-1,3-cyclohexadiene ruthenium dissolved in a solubilizing solvent, vaporizing and directing toward a semiconductor substrate
04/01/2003US6540930 Use of perfluoroketones as vapor reactor cleaning, etching, and doping gases
04/01/2003US6540840 Vaporizer for MOCVD and method of vaporizing raw material solutions for MOCVD
04/01/2003US6540839 Apparatus and method to passivate magnets and magnetic materials
04/01/2003US6540838 Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
04/01/2003US6540837 Quartz wafer processing chamber
04/01/2003US6540509 Heat treatment system and method
04/01/2003US6540469 Substrate processing apparatus
04/01/2003US6540465 Substrate processing apparatus
04/01/2003US6539953 Cleaning a heater bellow by using a plug and a plug base for filling the bellow with an oxidizing fluid, rinsing the bellow with water and then blow dry the bellow with an inert gas
04/01/2003US6539891 Chemical deposition reactor and method of forming a thin film using the same
04/01/2003US6539890 Multiple source deposition plasma apparatus
04/01/2003US6539796 Liquid level sensor, ampoule, and liquid amount detection method
03/2003
03/27/2003WO2003025994A1 Ultraviolet curing process for porous low-k materials
03/27/2003WO2003025993A1 Plasma curing process for porous low-k materials
03/27/2003WO2003025988A1 Method for the production of iii-v- nitride-conductor-based semiconductor layers
03/27/2003WO2003025978A2 Method for separating two joined layers of material
03/27/2003WO2003025631A1 Optical and optoelectronic articles
03/27/2003WO2003025249A1 Method of forming nitride films
03/27/2003WO2003025248A1 Method for the deposition of silicon nitride
03/27/2003WO2003025243A2 Metal nitride deposition by ald using gettering reactant
03/27/2003WO2003000964B1 METHOD FOR PREPARING GaN BASED COMPOUND SEMICONDUCTOR CRYSTAL
03/27/2003WO2002089186A3 Deposition and skipe annealing of tungsten silicide films
03/27/2003WO2002045147A3 Method for pretreating dielectric layers to enhance the adhesion of cvd metal layers thereto
03/27/2003WO2002025696A9 Reducing deposition of process residues on a surface in a chamber
03/27/2003US20030060302 Highly durable and abrasion resistant composite diamond-like carbon decorative coatings with controllable color for metal substrates
03/27/2003US20030059615 Particles with vapor deposition coating
03/27/2003US20030059568 Opaque low resistivity silicon carbide
03/27/2003US20030059556 Method of depositing an optical quality silica film by PECVD
03/27/2003US20030059538 Integration of barrier layer and seed layer
03/27/2003US20030059536 Lanthanum complex and process for the preparation of a BLT layer using same
03/27/2003US20030059535 Cycling deposition of low temperature films in a cold wall single wafer process chamber
03/27/2003US20030059530 Method of coating particles by vapor deposition
03/27/2003US20030057845 Plasma processing apparatus
03/27/2003US20030057662 Guide bush and method of forming hard carbon film over the inner surface of the guide bush
03/27/2003US20030057527 Integration of barrier layer and seed layer
03/27/2003US20030057495 P-type transparent copper-aluminum-oxide semiconductor
03/27/2003US20030057434 Semiconductor device having improved buffer layers
03/27/2003US20030056901 Plasma processing apparatus and plasma processing system with reduced feeding loss, and method for stabilizing the apparatus and system
03/27/2003US20030056900 Deposition chamber and method for depositing low dielectric constant films
03/27/2003US20030056728 Method and device for depositing at least one precursor, which is in liquid or dissolved form, on at least one substrate
03/27/2003US20030056727 Method of depositing thin films and apparatus for depositing the same
03/27/2003US20030056726 Abatement of effluent from chemical vapor deposition processes using ligand exchange resistant metal-organic precursor solutions
03/27/2003US20030056720 Spherical; carbon concentration of less than 1 wt.-ppm; pore volume of 0.5 cm3 or less per 1 gram; mean pore diameter of 50 nm or less; specific surface area of 100 m2/g or less; bulk density of 0.7 g/cm3 or higher.
03/27/2003US20030056718 Method of manufacturing single crystal substrate
03/27/2003US20030056388 Cleaning gas for semiconductor production equipment
03/27/2003CA2399481A1 Method of coating particles by vapor deposition
03/26/2003EP1296364A1 Method for forming thin film and apparatus for forming thin film
03/26/2003EP1296353A2 Apparatus for surface modification of polymer, metal and ceramic materials using ion beam
03/26/2003EP1295963A2 Method of depositing an optical quality silica film by PECVD
03/26/2003EP1295332A2 Highly conformal titanium nitride deposition process for high aspect ratio structures
03/26/2003EP1295331A2 Formation of boride barrier layers using chemisorption techniques
03/26/2003EP1295318A2 Crystal structure control of polycrystalline silicon in a single wafer chamber
03/26/2003EP1295317A2 Semiconductor processing equipment having improved particle performance
03/26/2003EP1295309A2 Switched uniformity control
03/26/2003EP1294961A2 Carbide coated steel articles and method of making them
03/26/2003EP1294959A1 Method for producing a multi-functional, multi-ply layer on a transparent plastic substrate and a multi-functional multi-ply layer produced according to said method
03/26/2003EP1294640A1 Method and apparatus for production of high purity silicon
03/26/2003EP1135218A4 Superalloy component with abrasive grit-free coating
03/26/2003EP0946461B1 Densification of substrates arranged in ring-shaped stacks by chemical infiltration in vapour phase with temperature gradient
03/26/2003CN1405863A Method and apparatus for isolating air-tight packing in reaction chamber
03/26/2003CN1405857A Plasma etching device using plasma confining device
03/26/2003CN1405840A Semiconductor device manufacture method
03/26/2003CN1405580A Method for forming semi-transparent reflection mirror film and optical element with said film
03/25/2003US6538387 Substrate electrode plasma generator and substance/material processing method
03/25/2003US6538271 Semiconductor device and method of manufacturing the same
03/25/2003US6538147 Organocopper precursors for chemical vapor deposition
03/25/2003US6537929 CVD plasma assisted low dielectric constant films
03/25/2003US6537928 Apparatus and method for forming low dielectric constant film
03/25/2003US6537925 Method for forming Ta2O5 dielectric layer using plasma enhanced atomic layer deposition
03/25/2003US6537924 Method of chemically growing a thin film in a gas phase on a silicon semiconductor substrate
03/25/2003US6537911 Chemical vapor deposition method
03/25/2003US6537910 Forming metal silicide resistant to subsequent thermal processing
03/25/2003US6537901 Method of manufacturing a transistor in a semiconductor device
03/25/2003US6537830 Method of making ferroelectric FET with polycrystalline crystallographically oriented ferroelectric material
03/25/2003US6537733 Method of depositing low dielectric constant silicon carbide layers
03/25/2003US6537677 Process for fabricating films of uniform properties on semiconductor devices
03/25/2003US6537626 CVD-coated glass container
03/25/2003US6537623 Manufacture of silica waveguides with minimal absorption
03/25/2003US6537621 Method of forming a titanium film and a barrier film on a surface of a substrate through lamination
03/25/2003US6537613 Process for metal metalloid oxides and nitrides with compositional gradients
03/25/2003US6537462 Ruthenium and ruthenium dioxide removal method and material
03/25/2003US6537461 Process for treating solid surface and substrate surface
03/25/2003US6537429 Diamond coatings on reactor wall and method of manufacturing thereof
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