Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
04/2003
04/22/2003US6551399 Fully integrated process for MIM capacitors using atomic layer deposition
04/22/2003US6550158 Substrate handling chamber
04/17/2003WO2003032380A1 Device and method for processing substrate
04/17/2003WO2003031680A1 Methods for the production of components and ultra high vacuum cvd reactor
04/17/2003WO2003031679A2 Method for depositing metal layers employing sequential deposition techniques
04/17/2003WO2003031678A1 Apparatus and method for evenly flowing processing gas onto a semiconductor wafer
04/17/2003WO2003031677A1 Method and device for depositing a plurality of layers on a substrate
04/17/2003WO2003031676A1 Method for making carbon doped oxide film
04/17/2003WO2003031675A2 Method for diamond coating substrates
04/17/2003WO2003031674A1 Method of depositing a material layer
04/17/2003WO2002075011A3 Thin film forming method and apparatus
04/17/2003WO2002067319A3 Copper interconnect structure having diffusion barrier
04/17/2003WO2002056420A3 Fabrication of high current coated high temperature superconducting tapes
04/17/2003WO2002056338A3 Device for the plasma-mediated working of surfaces on planar substrates
04/17/2003WO2002044437A8 High strength alloys and methods for making same
04/17/2003WO2001073868A3 Device enclosures and devices with integrated battery
04/17/2003US20030073860 Vapor deposition of an organometallic compound; forming silicide
04/17/2003US20030073322 Ashing apparatus, ashing methods, and methods for manufacturing semiconductor devices
04/17/2003US20030073308 Low selectivity deposition methods
04/17/2003US20030073294 Depositing a component of film on a substrate at a first temperature; depositing a second component of film on substrate at a second temperature higher than first temperature; annealing to form strontium ruthenite film
04/17/2003US20030073293 In situ growth of oxide and silicon layers
04/17/2003US20030073278 Oxide film forming method
04/17/2003US20030072975 Incorporation of nitrogen into high k dielectric film
04/17/2003US20030072973 Corrosion-resistant member, method of manufacturing the same and apparatus for heating corrosive substance
04/17/2003US20030072947 Uniform pore distribution thus retain high rigidity thus are suitable for manufacturing of integrated circuits
04/17/2003US20030072930 Ceramic laminated article, a method of producing the same and a ceramic laminate
04/17/2003US20030072892 Placing a substrate within a plasma-enhanced chemical vapor deposition chamber, admitting vapor-phase tertiary-butyltris-dimethylamido-titanium; admitting a vapor phase silicon containing compound; heating to deposit
04/17/2003US20030072891 Transporting substrate to gap formed between electrodes; subjecting the first surface of substrate to plasma discharge treatment to form the layer at atmospheric pressure while supplying reactive gas
04/17/2003US20030072885 Fabrication method of metallic nanowires
04/17/2003US20030072884 Method of titanium and titanium nitride layer deposition
04/17/2003US20030072883 Enhancing the deposition of titanium containing materials on a substrate from a titanium containing precursor by the addition of organic amines to the titanium containing precursor
04/17/2003US20030072882 Method of depositing rare earth oxide thin films
04/17/2003US20030072881 Seposition in an expanding thermal plasma system to coat large areas of a substrate; uniformity
04/17/2003US20030072880 Method of controlling the initial growth of CVD copper films by surface treatment of barrier metals films
04/17/2003US20030072879 Gaseous precursor comprising aluminum compound, is brought into contact with the surfaces of the part placed in an enclosure by means of a carrier gas comprising helium or argon, pressurizing for aluminization by vapor deposition
04/17/2003US20030072878 Gaseous precursor comprising aluminum compound, is brought into contact with the surfaces of the part placed in an enclosure by means of a carrier gas comprising helium or argon, pressurizing for aluminization by vapor deposition
04/17/2003US20030072877 Apparatus and method for making free standing diamond
04/17/2003US20030072875 Delivery of solid chemical precursors
04/17/2003US20030072869 Real-time process control for optical component fabrication
04/17/2003US20030072695 Method of removing oxidized portions at an interface of a metal surface and capping layer in a semiconductor metallization layer
04/17/2003US20030071358 Low temperature nitride used as cu barrier layer
04/17/2003US20030071260 Susceptor with built-in electrode and manufacturing method therefor
04/17/2003US20030070911 Plasma polymerization enhancement of surface of metal for use in refrigerating and air conditioning
04/17/2003US20030070761 RF plasma reactor
04/17/2003US20030070759 Plasma processing method and apparatus
04/17/2003US20030070620 Tunable multi-zone gas injection system
04/17/2003US20030070619 In situ wafer heat for reduced backside contamination
04/17/2003US20030070618 Apparatus and process of improving atomic layer deposition chamber performance
04/17/2003US20030070617 Atomic layer deposition apparatus and process using remote plasma
04/17/2003US20030070616 Comprising tetraalkylammonium F(HF)x salts and a nitrile solvent, wherein alkyl groups are of 1-4 carbon atoms; useful in short term, high energy applications such as electric vehicles or cellular communication
04/17/2003US20030070609 Apparatus and process of improving atomic layer deposition chamber performance
04/17/2003US20030070608 Method for producing components and ultrahigh vacuum CVD reactor
04/17/2003US20030070451 Method of reducing stress-induced mechanical problems in optical components
04/17/2003US20030070247 Chamber cleaning mechanism
04/16/2003EP1302967A2 Method for producing an addressable field-emission cathode and an associated display structure
04/16/2003EP1302792A2 Method of reducing stress-induced mechanical problems in optical-quality thin films
04/16/2003EP1302561A1 Method and apparatus for forming a layer on a substrate by high-density plasma chemical vapor deposition (HDP-CVD)
04/16/2003EP1302560A1 Silicon oxide membrane
04/16/2003EP1302559A1 Process of protection by aluminization of metallic parts constituted at least partially of a honeycomb structure
04/16/2003EP1302558A1 Process of protection by aluminization of metallic parts of turbomachines having holes and cavities
04/16/2003EP1302248A2 Method and appartus for plasma deposition
04/16/2003EP1301938A2 A plasma reactor having a symmetric parallel conductor coil antenna
04/16/2003EP1151155B1 Cdv method of and reactor for silicon carbide monocrystal growth
04/16/2003CN1411516A Supplying and exhausting system in plasma polymerizing apparatus
04/16/2003CN1411515A Method and device for coating substrates
04/16/2003CN1411514A Method of cleaning and conditioning plasma reaction chamber
04/16/2003CN1411080A Nickel titanium memory alloy and piezoelectric ceramic hetero three step compounding technology
04/16/2003CN1410589A Technique and equipment for making film by chemical vapour deposition process
04/16/2003CN1410375A Structure and manufacturing method of elliptical jacket type premade stick and light bias fiber
04/16/2003CN1105927C Fabrication method for uniform planer optical waveguide
04/16/2003CA2408179A1 Aluminization protection process for metal parts having at least one part with a honeycomb structure
04/16/2003CA2408162A1 Aluminization protection process for turbomachine metal parts having holes and cavities
04/15/2003US6548899 Decontaminated, demoisturized cured dielectric films
04/15/2003US6548892 Low k dielectric insulator and method of forming semiconductor circuit structures
04/15/2003US6548685 Dissolving NbCl5 (niobium chloride) or TaCl5(tantalum chloride) in an alcohol containing ammonia; reacting in low temperature to form niobium(V) alkoxide or the tantalum(V) alkoxide
04/15/2003US6548683 Methods, complexes and system for forming metal-containing films
04/15/2003US6548424 Process for producing oxide thin films
04/15/2003US6548405 Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitride
04/15/2003US6548404 Method and apparatus for manufacturing semiconductor devices
04/15/2003US6548402 Method of depositing a thick titanium nitride film
04/15/2003US6548398 Production method of semiconductor device and production device therefor
04/15/2003US6548380 Semiconductor thin film, semiconductor device employing the same, methods for manufacturing the same and device for manufacturing a semiconductor thin film
04/15/2003US6548378 Method of boron doping wafers using a vertical oven system
04/15/2003US6548173 Method of produce ultra-low friction carbon films
04/15/2003US6548172 Diamond-like carbon coatings on inorganic phosphors
04/15/2003US6548130 Fiber coating method
04/15/2003US6548123 For coating external surface of plastic containers; provides for low permeability to gases and vapors; for food, beverage containers
04/15/2003US6548112 Liquid precursor such as copper or other metal-organic precursor is atomized at entry of high flow-conductance vaporizer, preferably with assistance of inert sweep gas
04/15/2003US6547979 Methods of enhancing selectivity of etching silicon dioxide relative to one or more organic substances; and plasma reaction chambers
04/15/2003US6547922 Vacuum-processing apparatus using a movable cooling plate during processing
04/15/2003US6547921 Method and apparatus for processing semiconductor substrates
04/15/2003US6547863 Having stability and concentration fit for solution chemical vapor deposition by utilizing cyclohexane based compounds which disolve said metal compound
04/15/2003US6547844 Exhaust gas filtration device, auxiliary filtration device and trap device
04/15/2003US6547494 Diamond coated tool and method of manufacturing the diamond coated tool
04/10/2003WO2003030251A1 Silicon monocrystal wafer processing device, and method of manufacturing silicon monocrystal wafer and silicon epitaxial wafer
04/10/2003WO2003030243A1 Incorporation of nitrogen into high k dielectric film
04/10/2003WO2003030242A1 Method of forming dielectric films
04/10/2003WO2003030241A1 Plasma processing apparatus
04/10/2003WO2003030224A2 Barrier formation using novel sputter-deposition method
04/10/2003WO2003030222A2 Tool for handling wafers and epitaxial growth station