Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
05/2003
05/01/2003US20030082313 Method for surface treatment of metal enclosure
05/01/2003US20030082307 Integration of ALD tantalum nitride and alpha-phase tantalum for copper metallization application
05/01/2003US20030082301 Enhanced copper growth with ultrathin barrier layer for high performance interconnects
05/01/2003US20030082300 Vapor deposition using silane compound; uniform thickness
05/01/2003US20030082296 Vapor deposition using metal halide; removal by-products; using scavenger
05/01/2003US20030080363 Electronic device with electrode and its manufacture
05/01/2003US20030080325 Chemical vapor deposition method of making layered superlattice materials using trimethylbismuth
05/01/2003US20030080112 System of controlling the temperature of a processing chamber
05/01/2003US20030080110 Hot plate
05/01/2003US20030080109 Heater assembly for manufacturing a semiconductor device
05/01/2003US20030080090 Method and apparatus for restricting process fluid flow within a showerhead assembly
05/01/2003US20030080085 Coated microfluidic delivery system
05/01/2003US20030079853 Substrate support and method of fabricating the same
05/01/2003US20030079837 Semiconductor processing apparatus for continuously forming semiconductor film on flexible substrate
05/01/2003US20030079834 Shielding system for plasma chamber
05/01/2003US20030079757 Method of cleaning cvd device and cleaning device therefor
05/01/2003US20030079690 Metallization module for cathode-ray tube (CRT) applications
05/01/2003US20030079689 Induction heating devices and methods for controllably heating an article
05/01/2003US20030079686 Gas delivery apparatus and method for atomic layer deposition
04/2003
04/30/2003CN1415115A Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
04/30/2003CN1414636A Electron device with electrode and its manufacture
04/30/2003CN1414615A Manufacturing method of semiconductor device
04/30/2003CN1414604A Manufacturing method of semiconductor
04/30/2003CN1414603A Method of forming TiN barrier by chemical rapour phase deposition
04/30/2003CN1107124C Modification of surfaces of polymers, polymers with modified surface
04/29/2003USRE38097 In situ removal of deposits from gas apparatus; maintenance
04/29/2003US6555845 Method for manufacturing group III-V compound semiconductors
04/29/2003US6555701 CVD material compound and method for manufacturing the same and CVD method of ruthenium or ruthenium compound thin film
04/29/2003US6555454 Semiconductor memory device incorporating therein ruthenium electrode and method for the manufacture thereof
04/29/2003US6555421 Method and apparatus for manufacturing semiconductor device
04/29/2003US6555394 Methods of fabricating capacitors including Ta2O5 layers in a chamber including changing a Ta2O5 layer to heater separation or chamber pressure
04/29/2003US6555257 Corrosion-resistant member, method of manufacturing the same and apparatus for heating corrosive substance
04/29/2003US6555183 Plasma treatment of a titanium nitride film formed by chemical vapor deposition
04/29/2003US6555167 Method for growing high quality group-III nitride thin film by metal organic chemical vapor deposition
04/29/2003US6555166 Identifying a growth-rate-limiting reactant, calculating a dilution factor, and adjusting the film growth rate and/or the dilution factor to satisfy a numerical criterion for reducing the microloading effect; use in a single-wafer reactor
04/29/2003US6555165 Method for forming a thin film and a thin film forming apparatus therefor
04/29/2003US6554970 Undercoat of non-evaporating getter deposited on the whole surface of the metal wall defining the chamber; and a thin film of catalyst is on this undercoat
04/29/2003US6554910 Treatment gas interacts with the metal-based residue to form a removable treatment product that is substantially stable when exposed to air as compared with the metal-based residue; and opening the processing chamber to remove the product
04/29/2003US6554907 Susceptor with internal support
04/29/2003US6554879 Trap apparatus
04/29/2003US6554548 Hard refractory coated insert with tungsten carbide substrate containing a binder alloy of cobalt and chromium
04/29/2003US6553933 Apparatus for injecting and modifying gas concentration of a meta-stable species in a downstream plasma reactor
04/29/2003US6553932 Reduction of plasma edge effect on plasma enhanced CVD processes
04/29/2003US6553811 Trap apparatus
04/24/2003WO2003034477A1 Method and apparatus for chemical vapor ddeposition capable of preventing contamination and enhancing film growth rate
04/24/2003WO2003034474A1 Semiconductor manufacturing apparatus and method for manufacturing semiconductor device
04/24/2003WO2003034463A2 Tunable multi-zone gas injection system
04/24/2003WO2003033973A1 Heating medium circulating device and thermal treatment equipment using the device
04/24/2003WO2003033763A1 Method and device for monitoring a cvd process
04/24/2003WO2003033762A1 Atomic layer deposition apparatus and process
04/24/2003WO2003033761A2 Multi-chamber installation for treating objects under vacuum, method for evacuating said installation and evacuation system therefor
04/24/2003WO2003033169A1 Method of titanium and titanium nitride layer deposition
04/24/2003WO2002083979A3 Process and device for the deposition of an at least partially crystalline silicium layer on a substrate
04/24/2003US20030077921 Carbon doped oxide deposition
04/24/2003US20030077920 Method for fabricating a semiconductor device and a substrate processing apparatus
04/24/2003US20030077917 Method of fabricating a void-free barrier layer
04/24/2003US20030077888 Reduced thickness variation in a material layer deposited in norrow and wide integrated circuit trenches
04/24/2003US20030077883 Deposition method, deposition apparatus, and semiconductor device
04/24/2003US20030077857 Post-deposition treatment to enhance properties of SI-O-C low films
04/24/2003US20030077477 Article protected by thermal barrier coating having a sintering inhibitor, and its fabrication
04/24/2003US20030077400 Gas barriers for plastic containers; carbonated beverages
04/24/2003US20030077388 Method and apparatus for chemical vapor deposition capable of preventing contamination and enhancing film growth rate
04/24/2003US20030075925 Source chemical container assembly
04/24/2003US20030075535 Heat treating device
04/24/2003US20030075527 Method and apparatus for supplying gas used in semiconductor processing
04/24/2003US20030075522 Procedure and device for the production of a plasma
04/24/2003US20030075434 Storage plate support for receiving disk-shaped storage plates
04/24/2003US20030075387 Wafer loading device
04/24/2003US20030075274 Wafer support system
04/24/2003US20030075273 Atomic layer deposition reactor
04/24/2003US20030075109 Vapor phase growth apparatus
04/24/2003US20030075107 Apparatus and method for manufacturing semiconductor
04/23/2003EP1304748A2 Method for producing a solar cell
04/23/2003EP1304731A1 Method of cleaning cvd device and cleaning device therefor
04/23/2003EP1304397A2 Article protected by thermal barrier coating having a sintering inhibitor, and its fabrication
04/23/2003EP1303869A2 Heated substrate support assembly and method
04/23/2003EP1303644A1 Production of carbon and carbon-based materials
04/23/2003EP1042528B1 Method for deposition of ferroelectric thin films
04/23/2003CN1413363A Method for producing electrode for lithium secondary cell
04/23/2003CN1413355A Method of manufacturing electrode for plasma reactor and such electrode
04/23/2003CN1413261A Deposited thin films and their use in detection, attachment and bio-medical application
04/23/2003CN1412350A Working platform for deposition process
04/23/2003CN1412347A Surface treatment method related to plasma polymerization reaction
04/23/2003CN1412346A Method for preparing diamond film by using UV photon composite glow discharge chemical gas phase deposition process
04/23/2003CN1412344A Gate switch equipment of continuous polymerization system using plasma
04/23/2003CN1412339A Electrode for plasma polymerization treatment equipment
04/23/2003CN1106670C Plasma generator
04/23/2003CN1106456C Preparation process of diamond film suitable for inkage technology on silicon substrate
04/23/2003CN1106455C Large area diamond film material growth technology of nanometer diamond powder pretreatment
04/22/2003US6553170 Method and system for a combination of high boron and low boron BPSG top clad fabrication process for a planar lightwave circuit
04/22/2003US6552403 Binary non-crystalline oxide analogs of silicon dioxide for use in gate dielectrics
04/22/2003US6552297 RF matching network with distributed outputs
04/22/2003US6551949 Vapor deposition; overcoating semiconductor substrate
04/22/2003US6551932 Method for forming metal line in a semiconductor device
04/22/2003US6551929 Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
04/22/2003US6551718 Low friction coating
04/22/2003US6551665 Flowing a mixture of a diamagnetic ozone or hydrogen peroxide and diatomic oxygen over the silicate glass; tetraethoxysilane (teos)
04/22/2003US6551447 Inductive plasma reactor
04/22/2003US6551444 Plasma processing apparatus and method of processing
04/22/2003US6551406 Apparatus for growing thin films