Patents
Sitemap › C23 - Coating metallic material; Coating material with metallic material; Chemical surface treatment; Diffusion treatment of metallic material; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general; Inhibiting corrosion of metallic material or incrustation in general › C23C - Coating metallic material; Coating material with metallic material; Surface treatment of metallic material by diffusion into the surface, by chemical conversion or substitution; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general › C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes
Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
05/2003
05/08/2003WO2003038144A1 Method and device for depositing especially crystalline layers onto especially crystalline substrates
05/08/2003WO2003038143A1 Fluorocarbon-organosilicon copolymers and coatings prepared by hot-filament chemical vapor deposition
05/08/2003WO2003037993A1 Pigment with a metallic lustre
05/08/2003WO2003003404A3 Process chamber components having textured internal surfaces and method of manufacture
05/08/2003WO2002089228A3 Composite material, methods for the production thereof and its use
05/08/2003WO2002032588A9 Coating formation by reactive deposition
05/08/2003US20030088116 A specific example of which is (2,4-dimethyl-pentadienyl) (ethylcyclopentadienyl) ruthenium
05/08/2003US20030087749 Cubic boron nitride composition, coating and articles made therefrom, methods of making and using said composition, coating and articles
05/08/2003US20030087530 Apparatus and method for reactive atom plasma processing for material deposition
05/08/2003US20030087521 Low-resistive tungsten silicide layer strongly adhered to lower layer and semiconductor device using the same
05/08/2003US20030087472 Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organic precursor compounds
05/08/2003US20030087215 Gas flow through interior cavities; heat exchanging; semiconductors
05/08/2003US20030087110 Vaporization, decomposition a silicide
05/08/2003US20030087043 Plasma vapor deposition
05/08/2003US20030087033 Systems and methods for an angle limiting deposition mask
05/08/2003US20030086840 To apply plasma processing on a substrate such as a semiconductor
05/08/2003US20030085436 Contacting gate stack with a gaseous mixture comprising bistertiarybutylaminosilane (BTBAS), at least one nitrogen-containing compound, and oxygen (O2) to form deposited silicon oxynitride spacer film; controlling the contact conditions
05/08/2003US20030085408 Oxygen-doped silicon carbide etch stop layer
05/08/2003US20030084850 Cathode electrode for plasma sources and plasma source of a vacuum coating device, in particular for the application of coating layers on optical substrates
05/08/2003US20030084849 Apparatus for chemical vapor deposition
05/08/2003US20030084848 Gas temperature control for a plasma process
05/08/2003US20030084839 Apparatus and method for diamond production
05/08/2003US20030084587 Substrate processing system
05/08/2003DE10210045C1 Light source, used as a gas discharge lamp, comprises a discharge vessel filled with a gas and an electron beam source located in a vacuum or in a region of low pressure
05/08/2003CA2464855A1 Induction heating devices and methods for controllably heating an article
05/07/2003EP1308993A2 High-K gate oxides with buffer layers of titanium for mfos single transistor memory applications
05/07/2003EP1308992A1 Device and method for processing substrate
05/07/2003EP1308989A2 Improved low mass wafer support system
05/07/2003EP1308537A2 System and method for preferential chemical vapor deposition
05/07/2003EP1308419A1 Precursors for zirconium and hafnium oxide thin film deposition
05/07/2003EP1307606A1 Barrier coating
05/07/2003EP1307605A2 Chromium-containing cemented tungsten carbide coated cutting insert
05/07/2003EP1307602A2 Chromium-containing cemented tungsten carbide body
05/07/2003EP1307340A1 Reduced grain boundary crystalline thin films
05/07/2003EP1307298A1 Plasma deposited barrier coating comprising an interface layer, method for obtaining same and container coated therewith
05/07/2003EP1192291B1 Device for monitoring intended or unavoidable layer deposits and corresponding method
05/07/2003EP1007763A4 Method of reducing metal contamination during semiconductor processing in a reactor having metal components
05/07/2003EP0935590B1 Densification of a porous structure (ii)
05/07/2003EP0912459B1 Densification of a porous structure (i)
05/07/2003EP0786819B1 Process for preparing thin-film transistor, process for preparing active matrix substrate, and liquid crystal display
05/07/2003EP0731751B1 Diamond-coated tools and process for making
05/07/2003CN1416477A Plasma polymerization system and method for plasma polymerization
05/07/2003CN1416153A Combination of heating furnace and loading tool of semiconductor substrate and mfg. method of semiconductor devic
05/07/2003CN1415782A Precursor body for zirconia and Hf Oxide thin film deposition
05/07/2003CN1415781A Method for producing material of base plate for encapsulating integrated circuit
05/07/2003CN1107877C Specular surface body
05/07/2003CN1107742C Guide bush and method of forming film on guide bush
05/06/2003US6559520 Vaporizing a dialkoxydialkylsilicon for chemical vapor deposition on a semiconductor and introducing oxygen and an inert gas to activate plasma polymerisation; low dielectric constant; humidity and heat resistance
05/06/2003US6559472 Film composition
05/06/2003US6559469 Ferroelectric and high dielectric constant transistors
05/06/2003US6559424 Heat treatment and radiation of semiconductors; passageway with coolant
05/06/2003US6559328 Metallic complex
05/06/2003US6559074 Method of forming a silicon nitride layer on a substrate
05/06/2003US6559070 Mesoporous silica films with mobile ion gettering and accelerated processing
05/06/2003US6559052 Deposition of amorphous silicon films by high density plasma HDP-CVD at low temperatures
05/06/2003US6559039 Doped silicon deposition process in resistively heated single wafer chamber
05/06/2003US6559037 Process for producing semiconductor device having crystallized film formed from deposited amorphous film
05/06/2003US6559026 Trench fill with HDP-CVD process including coupled high power density plasma deposition
05/06/2003US6559000 Method of manufacturing a capacitor in a semiconductor device
05/06/2003US6558995 Holographic, laser-induced fabrication of indium nitride quantum wires and quantum dots
05/06/2003US6558756 From organosilicon compound
05/06/2003US6558742 Method of hot-filament chemical vapor deposition of diamond
05/06/2003US6558736 Vapor deposition in vacuum
05/06/2003US6558517 Physical vapor deposition methods
05/06/2003US6558507 Plasma processing apparatus
05/06/2003US6558505 Method and apparatus for processing semiconductor substrates
05/06/2003US6558100 Vacuum processing apparatus and a vacuum processing system
05/06/2003US6557593 Refillable ampule and method re same
05/06/2003US6557569 Method of manufacturing an electrophotographic photosensitive member including multiple liquid cleaning steps and machining step
05/06/2003US6557248 Method of fabricating an electrostatic chuck
05/02/2003EP1306893A1 Plasma processing apparatus
05/02/2003EP1306889A2 Electronic device with electrode and its manufacture
05/02/2003EP1306888A2 Semiconductor processing apparatus for continuously forming semiconductor film on flexible substrate
05/02/2003EP1306858A1 Ultraviolet-transparent conductive film and process for producing the same
05/02/2003EP1306464A1 Graded material and method for synthesis thereof and method for processing thereof
05/02/2003EP1306463A1 Holder for plates
05/02/2003EP1306144A1 Method for the continuous surface treatment of an aluminium profile
05/02/2003EP1305838A2 Low-temperature fabrication of thin-film energy-storage devices
05/02/2003EP1305823A1 Process for growing a magnesium oxide film on a silicon (100) substrate coated with a cubic silicon carbide buffer layer
05/02/2003EP1305820A1 Method for heating a semiconductor wafer in a process chamber, and process chamber
05/02/2003EP1305453A1 Ring-shaped high-density plasma source and method
05/02/2003EP1305161A1 Electronic and optical materials
05/02/2003EP1227999B1 Method for producing a nanotube layer on a substrate
05/02/2003EP1135335B1 Thin hafnium oxide film and method for depositing same
05/01/2003WO2003036700A1 Device and method for microwave plasma processing, and microwave power supply device
05/01/2003WO2003036657A1 Substrate with transparent conductive oxide film and production method therefor, and photoelectric conversion element
05/01/2003WO2003036376A1 A thin film transistor substrate of using insulating layers having low dielectric constant and a method of manufacturing the same
05/01/2003WO2003035928A2 Mechanically and thermodynamically stable amorphous carbon layers for temperature-sensitive surfaces
05/01/2003WO2003035927A2 Gas delivery apparatus for atomic layer deposition
05/01/2003WO2003035926A2 Improved precursors for chemical vapour deposition
05/01/2003WO2003035922A1 Method for press working, plated steel product for use therein and method for producing the steel product
05/01/2003WO2002068712A3 Removal of etchant residues
05/01/2003WO2002041355B1 Plasma processing comprising three rotational motions of an article being processed
05/01/2003WO2002036514A9 Method of ion beam milling a glass substrate prior to depositing a coating system thereon, and corresponding system for carrying out the same
05/01/2003WO2002036513A9 Low-e coating system including protective dlc
05/01/2003US20030082927 Precursors for zirconium and hafnium oxide thin film deposition
05/01/2003US20030082924 Method of making a semiconductor device by converting a hydrophobic surface of a dielectric layer to a hydrophilic surface
05/01/2003US20030082909 High-k gate oxides with buffer layers of titanium for MFOS single transistor memory applications
05/01/2003US20030082884 Method of forming low-leakage dielectric layer
05/01/2003US20030082412 Method for forming thin film, article having thin film, optical film, dielectric coated electrode, and plasma discharge processor
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