Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
06/2003
06/10/2003US6576569 Method of plasma-assisted film deposition
06/10/2003US6576565 RTCVD process and reactor for improved conformality and step-coverage
06/10/2003US6576564 Photo-assisted remote plasma apparatus and method
06/10/2003US6576538 Technique for high efficiency metalorganic chemical vapor deposition
06/10/2003US6576534 Method for forming a semiconductor
06/10/2003US6576528 Capacitor for semiconductor memory device and method of manufacturing the same
06/10/2003US6576481 Method of manufacturing semiconductor devices
06/10/2003US6576318 Method to fabricate smooth-surfaced crystalline phase-change layer for atomic resolution storage device
06/10/2003US6576293 Method to improve copper thin film adhesion to metal nitride substrates by the addition of water
06/10/2003US6576292 Method of forming highly adhesive copper thin films on metal nitride substrates via CVD
06/10/2003US6576064 Support apparatus for semiconductor wafer processing
06/10/2003US6576063 Apparatus and method for use in manufacturing a semiconductor device
06/10/2003US6576062 Film forming apparatus and film forming method
06/10/2003US6576060 Protective gas shield apparatus
06/10/2003US6575671 Chromium-containing cemented tungsten carbide body
06/10/2003US6574993 Method of manufacturing a preform exhibiting a precisely defined refractive index profile by means of a chemical vapor deposition (CVD) technique
06/05/2003WO2003046971A1 Method for forming an oxynitride spacer for a metal gate electrode using a pecvd process with a silicon-starving atmosphere
06/05/2003WO2003046970A1 Low temperature compatible wide-pressure-range plasma flow device
06/05/2003WO2003046969A1 Processing device, and gas discharge suppressing member
06/05/2003WO2003046966A1 Susceptor, gaseous phase growing device, device and method for manufacturing epitaxial wafer, and epitaxial wafer
06/05/2003WO2003046957A1 Heated vacuum support apparatus
06/05/2003WO2003046255A1 Field emission device and method of fabricating same
06/05/2003WO2003046254A1 Method for the fabrication of silicon nitride, silicon oxynitride, and silicon oxide films by chemical vapor deposition
06/05/2003WO2003046253A1 Method for depositing silicon nitride films and silicon oxynitride films by chemical vapor deposition
06/05/2003WO2003046252A2 Buffing diamond-like carbon (dlc) to improve scratch resistance
06/05/2003WO2003046248A2 Improved method for coating a support
06/05/2003WO2003046244A2 Generation, distribution, and use of molecular fluorine within a fabrication facility
06/05/2003WO2003045959A1 Hexakis (monohydrocarbylamino) disilanes and method for the preparation thereof
06/05/2003WO2003045860A1 Burner for a vapour deposition process
06/05/2003WO2003008664A3 Method of making a passivated surface
06/05/2003WO2002062111A3 Apparatus and method for atmospheric pressure reactive atom plasma processing for surface modification
06/05/2003WO2002058112A9 Copper diffusion barriers
06/05/2003US20030104708 CVD plasma assisted lower dielectric constant sicoh film
06/05/2003US20030104707 System and method for improved thin dielectric films
06/05/2003US20030104689 Manufacturing method of semiconductor device
06/05/2003US20030104667 Capacitor constructions comprising perovskite-type dielectric materials, and methods of forming capacitor constructions comprising perovskite-type dielectric materials
06/05/2003US20030104664 Silicon film, semiconductor device, and process for forming silicon films
06/05/2003US20030104255 Chemical deposition includes drawing a small amount of chromium from the steel substrate into the vanadium or niobium carbide coating to provide adhesion strength
06/05/2003US20030104254 Substrate after coating is subjected to a dry blast treatment using a granular blast agent that has a maximum diameter of 150 mu m.
06/05/2003US20030104209 Precursor and method of growing doped glass films
06/05/2003US20030104202 Method for inducing controlled cleavage of polycrystalline silicon rod
06/05/2003US20030104185 Method for producing a multi-functional, multi-ply layer on a transparent plastic substrate and a multi-functional multi-ply layer produced according to said method
06/05/2003US20030104158 System and method for thin film protective overcoat
06/05/2003US20030104141 Atmospheric pressure; thin film deposits on silicon surfaces for solar cells
06/05/2003US20030104139 Apparatus for depositing a plasma chemical vapor deposition coating on the inside of an optical fiber preform
06/05/2003US20030104126 Method for depositing refractory metal layers employing sequential deposition techniques
06/05/2003US20030103871 Minimum volume oven for producing uniform pyrolytic oxide coatings on capacitor anodes
06/05/2003US20030102811 Plasma coil
06/05/2003US20030102501 Rhodium-rich integrated circuit capacitor electrode
06/05/2003US20030102085 Chemical plasma cathode
06/05/2003US20030101938 Apparatus for the deposition of high dielectric constant films
06/05/2003US20030101934 Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes
06/05/2003US20030101927 Apparatus and method for growth of a thin film
06/05/2003US20030101869 Washing pretreatment with oil; circulation
06/05/2003US20030101699 Exhaust gas filtration device and auxiliary filtration device
06/05/2003US20030101613 Cleaning efficiency improvement in a high density plasma process chamber using thermally hot gas
06/04/2003EP1316626A2 Transparent conductive layer forming method, transparent conductive layer formed by the method, and material comprising the layer
06/04/2003EP1316110A2 Electrostatic chuck with porous regions
06/04/2003EP1316108A1 Low-dielectric silicon nitride film and method of forming the same, semiconductor device and fabrication process thereof
06/04/2003EP1316107A2 Method of forming a pre-metal dielectric film on a semiconductor substrate
06/04/2003EP1315854A2 Apparatus and method for cleaning a bell jar in a barrel epitaxial reactor
06/04/2003EP1315853A1 Device for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates
06/04/2003EP1092233A4 Method of forming a thin film
06/04/2003EP1007757B1 Plastic containers with an external gas barrier coating
06/04/2003EP0994973B1 Apparatus and method for nucleation and deposition of diamond using hot-filament dc plasma
06/04/2003EP0888213B1 Diamond film deposition
06/04/2003CN1422388A Selective deposition of material on a substrate according to an interference pattern
06/04/2003CN1421543A CVD apparatus
06/04/2003CN1110582C Apparatus for vaporizing and supplying material
06/04/2003CN1110581C Improved hard alloy body for machining cast-iron
06/03/2003US6573211 Perovskite mixed oxide
06/03/2003US6573197 Thermally stable poly-Si/high dielectric constant material interfaces
06/03/2003US6573196 Method of depositing organosilicate layers
06/03/2003US6573185 Manufacture of a semiconductor device
06/03/2003US6573184 Apparatus and method for depositing thin film on wafer using atomic layer deposition
06/03/2003US6573182 Chemical vapor deposition using organometallic precursors
06/03/2003US6573180 PECVD method of forming a tungsten silicide layer on a polysilicon layer
06/03/2003US6573178 Manufacturing method for semiconductor device and semiconductor manufacturing apparatus
06/03/2003US6572991 Deposition of γ-Al2O3 by means of CVD
06/03/2003US6572975 Alternate layers of silicon dioxide and amorphous hydrogenated silicon coated by plasma enhanced chemical vapor deposition on such as aromatic polycarbonate; thermal stability; short wavelength infrared transparent
06/03/2003US6572937 Method for producing fluorinated diamond-like carbon films
06/03/2003US6572936 Hard carbon film-coated substrate and method for fabricating the same
06/03/2003US6572935 Optically transparent, scratch-resistant, diamond-like carbon coatings
06/03/2003US6572933 Combining plasma based implantation and deposition increasing film thickness and reducing stress
06/03/2003US6572925 Doped silica
06/03/2003US6572924 Two exhaust paths and three way flow control valve; reducing contamination of semiconductor wafers
06/03/2003US6572708 Semiconductor wafer support lift-pin assembly
06/03/2003US6572707 Vaporizer for sensitive precursors
06/03/2003US6572706 Integrated precursor delivery system
06/03/2003US6572705 Method and apparatus for growing thin films
06/03/2003US6572371 Gas preheater which allows substantially uniform densification to be achieved without significantly affecting productivity of chemical vapor infiltration substrates
06/03/2003US6571865 Heat transfer surface
06/03/2003US6571729 Apparatus for depositing a thin film on a data recording disk
06/03/2003CA2264371C Thin film deposition method
05/2003
05/30/2003WO2003044843A2 Forming low k dielectric layers
05/30/2003WO2003044839A2 Formation of high-mobility silicon-germanium structures by low-energy plasma enhanced chemical vapor deposition
05/30/2003WO2003044242A2 Atomic layer deposition of copper using a reducing gas and non-fluorinated copper precursors
05/30/2003WO2003016590A3 Device for supplying gas mixtures to a cvd reactor
05/30/2003WO2002089237A3 Method of making fluid diffusion layers and electrodes having reduced surface roughness
05/30/2003WO2002045167A3 Thin films for magnetic devices