Patents
Sitemap › C23 - Coating metallic material; Coating material with metallic material; Chemical surface treatment; Diffusion treatment of metallic material; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general; Inhibiting corrosion of metallic material or incrustation in general › C23C - Coating metallic material; Coating material with metallic material; Surface treatment of metallic material by diffusion into the surface, by chemical conversion or substitution; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general › C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes
Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
06/2003
06/26/2003WO2003052807A1 Plasma processor
06/26/2003WO2003052806A1 Plasma treatment apparatus and plasma generation method
06/26/2003WO2003052177A1 Coloured diamond
06/26/2003WO2003052174A2 Boron doped diamond
06/26/2003WO2003052163A1 Cvd or etching process using 02/03 gas mixture
06/26/2003WO2003052162A1 A method of depositing dielectric materials in damascene applications
06/26/2003WO2003052160A1 Vaporiser/delivery vessel for volatile/thermally sensitive solid and liquid compounds
06/26/2003WO2003051946A2 Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin films
06/26/2003WO2003051498A1 Plasma treatment of porous materials
06/26/2003WO2003041132A3 Gas-assisted rapid thermal processing
06/26/2003WO2002065547A3 METHOD OF OBTAINING LOW TEMPERATURE ALPHA-Ta THIN FILMS USING WAFER BIAS
06/26/2003US20030119336 Insulation film on semiconductor substrate and method for forming same
06/26/2003US20030119328 Plasma processing apparatus, and cleaning method therefor
06/26/2003US20030119325 Method of forming a metal line in a semiconductor device
06/26/2003US20030119313 Processes to form a metallic film stack
06/26/2003US20030119312 Floor cleaning with an absorbent pad, which has soaked with a cleaning solution, comprising small concentration of xanthan gum and hydrophobic cleaning solvents; avoidance of build-up or stickiness, easier mopping
06/26/2003US20030119288 Method for fabricating a semiconductor device and a substrate processing apparatus
06/26/2003US20030119283 Vapor-phase epitaxial growth method
06/26/2003US20030119234 Method of filling a concave portion with an insulating material
06/26/2003US20030118905 Silicon dioxide overcoated with vapor deposited carbon
06/26/2003US20030118873 Stabilized zirconia thermal barrier coating with hafnia
06/26/2003US20030118872 Methods of forming nitride films
06/26/2003US20030118859 Diffusion barrier; protective coating of alumina, chromium oxide
06/26/2003US20030118845 Diffusion barrier
06/26/2003US20030118841 Optical materials and optical devices
06/26/2003US20030118827 Mixing the rhenium and tantalum powders to form a homogenous blend, compressing the mixture to form a green compact, sintering the compact so that the tantalum goes into solid solution with the rhenium and cold rolling the sintered alloy
06/26/2003US20030118748 Silicon oxide film formation method
06/26/2003US20030118728 Comprising oven, loading zone, means for heating substrates in loading zone, inlet for admitting reactive gas into oven, gas heating zone situated in oven between reactive gas inlet and loading zone, gas preheating device
06/26/2003US20030118727 Supplying substrate, metal powders, and carbon-containing reactant gas to chemical vapor deposition system under high temperature to form nanotubes having multiple junctions above substrate, exhibiting two- or three-dimensional web structures
06/26/2003US20030118725 Organometallic compounds useful for deposition of a material having a high dielectric constant suitable for application to a capacitor of a high integrated semiconductor element
06/26/2003US20030117233 Surface acoustic wave resonator
06/26/2003US20030116795 Method of manufacturing a tantalum pentaoxide - aluminum oxide film and semiconductor device using the film
06/26/2003US20030116652 Gas injector adapted for ALD process
06/26/2003US20030116425 Electric arc spraying; controlling film thickness, surface roughness
06/26/2003US20030116421 Adsorption; azeotropic distillation
06/26/2003US20030116280 Apparatus and method for insulating a seal in a process chamber
06/26/2003US20030116279 Apparatus for chemical vapor deposition
06/26/2003US20030116278 Gas distributor for vapor coating method and container
06/26/2003US20030116091 Chemical vapor deposition vaporizer
06/26/2003US20030116087 Chamber hardware design for titanium nitride atomic layer deposition
06/26/2003US20030116019 Comprising vaporizer with heaters on the surfaces to promote heat exchange and evaporate the entrained liquid droplets; use in semiconductor
06/26/2003US20030115984 Cemented carbide with binder phase enriched surface zone
06/26/2003DE10212069C1 Arrangement for producing a precursor for a chemical vapor deposition reactor comprises reactor containing starting material body formed as heating body for converting electrical energy into heat, and heating device
06/26/2003CA2469739A1 Plasma treatment of porous materials
06/25/2003EP1321976A2 Method of depositing a barrier insulating layer with low dielectric constant on a copper film
06/25/2003EP1321975A2 Method for plasma depositing an insulating film with low dielectric constant for a semiconductor device
06/25/2003EP1321973A2 CVD deposition of a metal-silicon-oxynitride gate dielectrics
06/25/2003EP1321545A1 Method for producing particles with diamond structure
06/25/2003EP1321538A2 Gas distributor for vapor coating method and apparatus
06/25/2003EP1321469A1 Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane
06/25/2003EP1320879A1 System and method for cleaning semiconductor fabrication equipment parts
06/25/2003EP1320875A1 Gas compositions for cleaning the interiors of reactors as well as for etching films of silicon-containing compounds
06/25/2003EP1320867A2 Reducing deposition of process residues on a surface in a chamber
06/25/2003EP1320636A1 Method and device for depositing especially, organic layers by organic vapor phase deposition
06/25/2003CN1426488A Cemented carbide tool and method of making
06/25/2003CN1426461A Method of producing membrane vesicles
06/25/2003CN1426100A High-K grating oxide with titanium buffering layer used for metal iron electric oxide and silicon single tube unit memory
06/25/2003CN1426090A Inductive coupling type plasma device
06/25/2003CN1425797A Process for chemical vapor phase depositing titaniam nitride containing silicon using titanium containing organic metal material
06/25/2003CN1112463C Plasma chemical vapor deposition filing method and equipment
06/25/2003CN1112462C Deposition process for preparing anti-reflecting film of InSb infrared focus plane array device and its special mask frame
06/24/2003US6583497 Surface treatment of c-doped SiO2 film to enhance film stability during O2 ashing
06/24/2003US6583481 Electrostatic-erasing abrasion-proof coating and method for forming the same
06/24/2003US6583468 Decreased dislocation density of epitaxially grown nitride layer; field effect transistors
06/24/2003US6583071 Ultrasonic spray coating of liquid precursor for low K dielectric coatings
06/24/2003US6583064 Low contamination high density plasma etch chambers and methods for making the same
06/24/2003US6583057 Method of forming a semiconductor device having a layer deposited by varying flow of reactants
06/24/2003US6583048 Chemical vapor deposition from a silyl ether, a silyl ether oligomer, or an organosilicon compound containing one or more reactive groups, to form an interlayer dielectric film having a dielectric constant of 3.5 or less.
06/24/2003US6583026 Process for forming a low k carbon-doped silicon oxide dielectric material on an integrated circuit structure
06/24/2003US6583022 Methods of forming roughened layers of platinum and methods of forming capacitors
06/24/2003US6582834 Overcoating interior passageway with protective coating; gas turbine engines
06/24/2003US6582823 Wear-resistant polymeric articles and methods of making the same
06/24/2003US6582780 Rotating cooler prevents carbonization
06/24/2003US6582779 Silicon nitride components with protective coating
06/24/2003US6582778 Method of treatment with a microwave plasma
06/24/2003US6582777 Exposure to radiation
06/24/2003US6582765 Carbide coated steel articles and method of making them
06/24/2003US6582522 Emissivity-change-free pumping plate kit in a single wafer chamber
06/24/2003US6582481 A mixture of lithium (2,2,6,6-tetramethyl-3,5-heptadionate) and cobalt (III) acetylacetonate dissolved in organic solvent; processing the solution to form a mist; heating solution mist to vapor state; and depositing vapor upon substrate
06/24/2003US6581623 Auto-switching gas delivery system utilizing sub-atmospheric pressure gas supply vessels
06/24/2003US6581612 Chamber cleaning with fluorides of iodine
06/24/2003US6581258 Method of forming electrode film
06/21/2003CA2412455A1 Stabilized zirconia thermal barrier coating with hafnia
06/19/2003WO2003050870A1 Diffusion barrier
06/19/2003WO2003050854A2 Chemical reactor templates: sacrificial layer fabrication and template use
06/19/2003WO2003050853A2 A method of forming a silicon nitride layer on a substrate
06/19/2003WO2003050324A1 Method for forming thin film, substrate having thin film formed by the method, and photoelectric conversion device using the substrate
06/19/2003WO2003050323A1 Cyclical deposition of refractory metal silicon nitride
06/19/2003WO2003049786A2 Metering valve and pharmaceutical metered dose inhaler and methods thereof
06/19/2003WO2003034463A3 Tunable multi-zone gas injection system
06/19/2003WO2003015133A3 Showerhead electrode design for semiconductor processing reactor
06/19/2003US20030114018 Method for fabricating a semiconductor component
06/19/2003US20030114017 Structure and method for fabricating GaN substrates from trench patterned GaN layers on sapphire substrates
06/19/2003US20030113995 Method for depositing a low k dielectric film (k<3.5) for hard mask application
06/19/2003US20030113992 Method of depositing a low dielectric with organo silane
06/19/2003US20030113986 Method of producing semiconductor device
06/19/2003US20030113971 Method of manufacturing semiconductor device
06/19/2003US20030113968 Methods to form electronic devices and methods to form a material over a semiconductive substrate
06/19/2003US20030113480 Method for forming high dielectric layers using atomic layer deposition
06/19/2003US20030113451 Extending the residence time of reactant gases in the reaction region; preferentially depositing species deposit faster on one surface than on the other
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