Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
07/2003
07/08/2003US6589869 Film thickness control using spectral interferometry
07/08/2003US6589868 Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput
07/08/2003US6589822 Manufacturing method for top-gate type and bottom-gate type thin film transistors
07/08/2003US6589619 Recycling method
07/08/2003US6589611 Forming a material along the sidewalls during the forming of the deposit over the substrate; impacting the material along the sidewalls with the activated species to treat the material and thereby decrease flaking
07/08/2003US6589610 Deposition chamber and method for depositing low dielectric constant films
07/08/2003US6589599 Easily loaded and unloaded getter device for reducing evacuation time and contamination in a vacuum chamber and method for use of same
07/08/2003US6589362 Light emitting element
07/08/2003US6589352 Self aligning non contact shadow ring process kit
07/08/2003US6589350 Vacuum processing chamber with controlled gas supply valve
07/08/2003US6589329 Composition and process for production of copper circuitry in microelectronic device structures
07/03/2003WO2003054949A1 Substrate processing method and substrate processing apparatus
07/03/2003WO2003054941A1 Plasma treatment apparatus and control method thereof
07/03/2003WO2003054940A1 Plasma treatment apparatus, matching box, impedance matching device, and coupler
07/03/2003WO2003054911A2 Plasma process apparatus
07/03/2003WO2003054257A1 Method for producing particles with diamond structure
07/03/2003WO2003054248A1 Plasma chamber insert ring
07/03/2003WO2003054247A2 Cleaning gas composition for semiconductor production equipment and cleaning method using the gas
07/03/2003WO2003054246A1 Method for monitoring the course of a process using a reactive gas containing one or several hydrocarbons
07/03/2003WO2003054245A1 Device for producing pcvd coated glass tubes for the drawing of optical fibers
07/03/2003WO2003053801A1 System for forming carbon film on inner surface of plastic container and method for producing plastic container having inner surface coated with carbon film
07/03/2003WO2003053673A1 Semiconductor with coordinatively irregular structures
07/03/2003US20030124877 Method of heat-treating nitride compound semiconductor layer and method of producing semiconductor device
07/03/2003US20030124876 Apparatus and method for use in manufacturing a semiconductor device
07/03/2003US20030124875 Method for forming dielectric film of capacitor
07/03/2003US20030124873 Method of annealing an oxide film
07/03/2003US20030124872 Combined gate cap or digit line and spacer deposition using HDP
07/03/2003US20030124870 Forming low k dielectric layers
07/03/2003US20030124863 Method of forming insulating layer and method of fabricating thin film transistor using the same
07/03/2003US20030124859 Fiber materials of the present invention have been found to be able exhibit superior softness
07/03/2003US20030124842 Dual-gas delivery system for chemical vapor deposition processes
07/03/2003US20030124820 Systems and methods for epitaxially depositing films on a semiconductor substrate
07/03/2003US20030124819 Method of manufacturing photovoltaic element and apparatus therefor
07/03/2003US20030124818 Method and apparatus for forming silicon containing films
07/03/2003US20030124799 Formation of conductive rugged silicon
07/03/2003US20030124798 Method of manufacturing a semiconductor device using a two-step deposition process
07/03/2003US20030124794 Electronic component incorporating an integrated circuit and planar microcapacitor
07/03/2003US20030124785 Supercritical fluid-assisted deposition of materials on semiconductor substrates
07/03/2003US20030124761 Method for depositing polycrystalline sige suitable for micromachining and devices obtained thereof
07/03/2003US20030124760 Method for forming thin films of semiconductor devices
07/03/2003US20030124717 Method of manufacturing carbon cylindrical structures and biopolymer detection device
07/03/2003US20030124449 Process and apparatus for manufacturing electrophotographic photosensitive member
07/03/2003US20030124394 Multilayer structure used especially as a material of high relative permittivity
07/03/2003US20030124393 Method for fabricating a III nitride film, substrate for epitaxial growth, III nitride film, epitaxial growth substrate for III nitride element and III nitride element
07/03/2003US20030124363 Hard metal wearing part with mixed oxide coating
07/03/2003US20030124267 CVD method without using reaction gas at low deposition temperature; metal (particularly iridium, cobalt or rhodium) compound having a neutral ligand in addition to an anion; may be performed in the absence of oxygen or hydrogen
07/03/2003US20030124262 Depositing a refractory metal containing crystalline barrier layer that inhibits atomic migration on a metal layer by alternately introducing pulses of a metal-containing compound and pulses of a nitrogen- containing compound; seed layer
07/03/2003US20030124252 Method of forming thin ruthenium-containing layer
07/03/2003US20030124251 Process of forming thin film and precursor for chemical vapor deposition
07/03/2003US20030124250 Device for producing PCVD coated glass tubes for the drawing of optical fibers
07/03/2003US20030124229 Plastic container for dry solid food
07/03/2003US20030121898 For semiconductor wafers; uniform temperature distribution
07/03/2003US20030121891 Ruthenium and ruthenium dioxide removal method and material
07/03/2003US20030121796 In situ generation of nitrogen fluoride
07/03/2003US20030121777 Components for vacuum deposition apparatus and vacuum deposition apparatus therewith , and target apparatus
07/03/2003US20030121776 Mobile plating system and method
07/03/2003US20030121608 Gas delivery apparatus for atomic layer deposition
07/03/2003US20030121469 Method and apparatus of growing a thin film
07/02/2003EP1324381A1 Workpiece holding mechanism
07/02/2003EP1324379A1 Multilayer structure and material with high permitivity
07/02/2003EP1324378A1 Mehrlagige Struktur, verwendet für Materialine mit hoher Permitivität
07/02/2003EP1324376A1 Electronic component comprising an integrated circuit and a planar micro capacitor
07/02/2003EP1324374A2 Etching System for an insulation-film
07/02/2003EP1324371A1 Plasma processing apparatus
07/02/2003EP1323851A2 Method for fabricating a III nitride film and products and elements obtained therefrom
07/02/2003EP1323847A2 Coated cemented carbide body and method for use
07/02/2003EP1323845A1 Multilayer structure
07/02/2003EP1323783A2 Conductive silicon oxide powder, preparation thereof, and negative electrode material for non-aqueous electrolyte secondary cell
07/02/2003EP1323671A1 Process for the fabrication of at least one nanotube between two electrically conductive elements and device for carrying out this process
07/02/2003EP1323182A2 Apparatus and method for reducing contamination on thermally processed semiconductor substrates
07/02/2003EP1323180A2 System, apparatus, and method for processing wafer using single frequency rf power in plasma processing chamber
07/02/2003EP1322901A2 System and method for controlling movement of a workpiece in a thermal processing system
07/02/2003EP1322801A1 Gas inlet mechanism for cvd-method and device
07/02/2003EP1322797A1 Method of growing a thin film onto a substrate
07/02/2003EP1246694A4 In-situ air oxidation treatment of mocvd process effluent
07/02/2003EP1198611B1 Device for treating a container with microwave plasma
07/02/2003CN1427749A Deposited thin film and their use in separation and sarcrificial layer applications
07/02/2003CN1426712A Diamond film watch band and its production method
07/02/2003CN1113400C Formation method of aluminium film for wiring
07/02/2003CN1113399C Method for mfg. Bi layer structure strong electrolyte thin-film
07/02/2003CN1113397C Plasma processing method and apparatus
07/02/2003CN1113391C Method for boron contamination reduction between silicon substrate and epitaxial Si or Si1-x Gex layer
07/02/2003CN1113113C Process for growing gallium nitride and its compound film
07/02/2003CN1112954C Gas purification system with safety device and method for purifying gases
07/01/2003US6586349 Integrated process for fabrication of graded composite dielectric material layers for semiconductor devices
07/01/2003US6586344 Mixing zirconium/hafnium chloride with zirconium/hafnium-tetramethylheptanedione complex and benzene, refluxing in argon atmosphere, removing solvents, then sublimating; chemical vapor deposition; semiconductors
07/01/2003US6586340 Wafer processing apparatus and wafer processing method using the same
07/01/2003US6586330 Method for depositing conformal nitrified tantalum silicide films by thermal CVD
07/01/2003US6586285 Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layers
07/01/2003US6586260 Integrated circuits
07/01/2003US6586056 Silicon based films formed from iodosilane precursors and method of making the same
07/01/2003US6586055 Method for depositing functionally gradient thin film
07/01/2003US6585830 Method for cleaning tungsten from deposition wall chambers
07/01/2003US6585828 Process chamber lid service system
07/01/2003US6585823 Atomic layer deposition
07/01/2003US6584987 Method for improved cleaning in HDP-CVD process with reduced NF3 usage
06/2003
06/30/2003CA2415324A1 Multilayer structure, used in particular as a material with high relative permittivity
06/30/2003CA2415312A1 Multilayer structure, used in particular as a material with high relative permittivity
06/30/2003CA2415309A1 Multilayer structure, used in particular as a material with high relative permittivity
06/30/2003CA2414400A1 Electronic component incorporating an integrated circuit and a planar microcondenser