| Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892) |
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| 07/17/2003 | WO2002031891A9 Electrode and electron emission applications for n-type doped nanocrystalline materials |
| 07/17/2003 | US20030135061 Volatile precursors for deposition of metals and metal-containing films |
| 07/17/2003 | US20030135020 Aliphatic polyester film and gas barrier film |
| 07/17/2003 | US20030134749 Oxide superconducting conductor and its production method |
| 07/17/2003 | US20030134511 Method for depositing metal film through chemical vapor deposition process |
| 07/17/2003 | US20030134508 Controlled conformality with alternating layer deposition |
| 07/17/2003 | US20030134484 Method for forming capacitor of semiconductor device |
| 07/17/2003 | US20030134466 Methods of forming nitrogen-containing masses, silicon nitride layers, and capacitor constructions |
| 07/17/2003 | US20030134465 Solutions of metal-comprising materials |
| 07/17/2003 | US20030134443 Methods Of Forming A Field Emission Device |
| 07/17/2003 | US20030134089 Polymer arrays from the combinatorial synthesis of novel materials |
| 07/17/2003 | US20030134060 Glass container for medicinal purposes |
| 07/17/2003 | US20030134051 Substrate has been coated so as to be conducting by means of gas placed in region of an electric discharge; process is especially suitable for treating band-shaped and continuously supplied substrates |
| 07/17/2003 | US20030134039 Reduction of dielectric constant of chemical vapor deposited films which are useful for production of microelectronic devices |
| 07/17/2003 | US20030134038 Depositing material on substrate by atomic layer processing including injecting series of gases sequentially into reactant chamber without purging one gas from chamber prior to injection of another gas |
| 07/17/2003 | US20030132509 High dielectric constant materials |
| 07/17/2003 | US20030132319 Showerhead assembly for a processing chamber |
| 07/17/2003 | US20030131795 Heating element CVD system and heating element CVD method using the same |
| 07/17/2003 | US20030131794 Motorized chamber lid |
| 07/17/2003 | US20030131792 Pressure control apparatus and method of establshing a desired level of pressure within at least one processing chamber |
| 07/17/2003 | US20030131469 Method of manufacturing an electrode for a plasma reactor and an electrode |
| 07/16/2003 | EP1327170A2 Using deuterated source gases to fabricate low loss germanium-doped silicon oxynitride (gesion-sion) waveguides |
| 07/16/2003 | EP1327010A2 Vapor deposition of oxides, silicates and phosphates |
| 07/16/2003 | EP1326718A2 Method and apparatus for forming a coating |
| 07/16/2003 | EP1297396A4 Flow control of process gas in semiconductor manufacturing |
| 07/16/2003 | EP1264330B1 Method and device for the plasma-activated surface treatment and use of the inventive method |
| 07/16/2003 | EP1255874B1 Tumble coater |
| 07/16/2003 | CN1430789A Method and apparatus for thermally processing wafers |
| 07/16/2003 | CN1430245A Method for forming film of semiconductor device |
| 07/16/2003 | CN1429927A Stablizing agent for stopping substituted cyclotetrasiloxane polymerizing |
| 07/16/2003 | CN1114937C Method of forming dielectric films with reduced metal contamination |
| 07/16/2003 | CN1114902C Thin film magnetic head |
| 07/15/2003 | US6593748 Electrical measuring instruments, data processors and analyzers for controlling coatings formed on semiconductor substrates; efficiency |
| 07/15/2003 | US6593655 Method for producing hydrogenated silicon oxycarbide films having low dielectric constant |
| 07/15/2003 | US6593615 Dielectric gap fill process that effectively reduces capacitance between narrow metal lines using HDP-CVD |
| 07/15/2003 | US6593548 Heating element CVD system |
| 07/15/2003 | US6593484 Forming tantalum nitride film as barrier film by chemical vapor deposition |
| 07/15/2003 | US6593248 Method for producing hydrogenated silicon oxycarbide films having low dielectric constant |
| 07/15/2003 | US6593247 Method of depositing low k films using an oxidizing plasma |
| 07/15/2003 | US6593236 Method of forming a metal wiring in a semiconductor device with copper seed |
| 07/15/2003 | US6592956 Plastic container having a carbon-treated internal surface |
| 07/15/2003 | US6592942 Method for vapour deposition of a film onto a substrate |
| 07/15/2003 | US6592839 Tailoring nanocrystalline diamond film properties |
| 07/15/2003 | US6592817 Monitoring an effluent from a chamber |
| 07/15/2003 | US6592707 Corrosion-resistant protective coating for an apparatus and method for processing a substrate |
| 07/15/2003 | US6592675 Rotating susceptor |
| 07/15/2003 | US6592674 Chemical vapor deposition apparatus and chemical vapor deposition method |
| 07/10/2003 | WO2003056619A2 Selective deposition of a barrier layer on a dielectric material |
| 07/10/2003 | WO2003056066A2 Apparatus for the generation and supply of fluorine gas |
| 07/10/2003 | WO2003056060A1 Method of tisin deposition using a chemical vapor deposition process |
| 07/10/2003 | WO2003056059A1 Method and installation for densifying porous substrate by gas-phase chemical infiltration |
| 07/10/2003 | WO2003055793A1 A method for manufacturing a nanostructure in-situ, and in-situ manufactured nanostructure devices |
| 07/10/2003 | WO2003012841A3 Semiconductor structures and devices not lattice matched to the substrate |
| 07/10/2003 | WO2002097866A3 Method of etching dielectric materials |
| 07/10/2003 | WO2002014578B1 Chromium-containing cemented tungsten carbide coated cutting insert |
| 07/10/2003 | US20030129852 Method for improving thickness uniformity of deposited ozone-TEOS silicate glass layers |
| 07/10/2003 | US20030129851 Plasma deposition method and system |
| 07/10/2003 | US20030129848 Pre-cleaning method of substrate for semiconductor device |
| 07/10/2003 | US20030129835 Efficient cleaning by secondary in-situ activation of etch precursor from remote plasma source |
| 07/10/2003 | US20030129827 Method of depositing dielectric materials in damascene applications |
| 07/10/2003 | US20030129826 Graded thin films |
| 07/10/2003 | US20030129811 Method of depositing silicon with high step coverage |
| 07/10/2003 | US20030129446 Multilayer structure used especially as a material of high relative permittivity |
| 07/10/2003 | US20030129328 Method for producing a layer which influences the orientation of a liquid crystal and a liquid crystal cell having at least on layer of this type |
| 07/10/2003 | US20030129309 Chemical vapor deposition of metal oxynitride, phosphonitride and boronitride; thin film has high barrier and low resistance |
| 07/10/2003 | US20030129308 Atomic layer deposition of copper using a reducing gas and non-fluorinated copper precursors |
| 07/10/2003 | US20030129307 Forming flexibible thin films via chemical vapor deposition, pulse-laser deposition, molecular beam epitaxy, and sputtering; acoustics; telecommunications |
| 07/10/2003 | US20030129306 Chemical vapor deposition of ruthenium films for metal electrode applications |
| 07/10/2003 | US20030129117 Synthesis and characterization of a highly stable amorphous silicon hydride as the product of a catalytic hydrogen plasma reaction |
| 07/10/2003 | US20030129106 Semiconductor processing using an efficiently coupled gas source |
| 07/10/2003 | US20030127640 Multilayer semiconductors; substrate overcoated by dielectric and silicide |
| 07/10/2003 | US20030127428 Method for separating chips from diamond wafer |
| 07/10/2003 | US20030127118 Cleaning gas |
| 07/10/2003 | US20030127052 Liquid delivery system having safe unit and operating method thereof |
| 07/10/2003 | US20030127050 Partition wall with apertures for dividing a chamber into a first space for the substrate and a second space for a source gas |
| 07/10/2003 | US20030127049 Anodizing a yttrium aluminum alloy by ion implantation of oxygen to form a yttrium aluminum oxide |
| 07/10/2003 | US20030127045 Alternating current with fixed or variable high frequency in of 2-800 kHz to concentrate >/= 70% of the current in an annular region for a skin effect |
| 07/10/2003 | US20030127043 Reacting pulses of a tungsten-containing precursor and a reducing gas |
| 07/10/2003 | US20030126945 Cemented carbide tool and method of making |
| 07/09/2003 | EP1326271A1 Method for film formation of gate insulator, apparatus for film formation of gate insulator, and cluster tool |
| 07/09/2003 | EP1325509A1 Method and device for treating surfaces using a glow discharge plasma |
| 07/09/2003 | EP1325177A1 Method for depositing, in particular, crystalline layers, a gas inlet element, and device for carrying out said method |
| 07/09/2003 | EP1325170A2 Fabrication of high current coated high temperature superconducting tapes |
| 07/09/2003 | EP1240366B1 Chemical vapor deposition reactor and process chamber for said reactor |
| 07/09/2003 | EP1093664A4 Temperature control system for a thermal reactor |
| 07/09/2003 | CN2559654Y High-speed centrifugal functional material film forming device |
| 07/09/2003 | CN1429398A Linear drive system for use in plasma processing system |
| 07/09/2003 | CN1428880A Conductive silicon oxide powder, its mfg. method and negative electrode material of nonaqueous electrolyte secodary battery |
| 07/09/2003 | CN1428825A Method for mfg. silicon oxide film |
| 07/09/2003 | CN1114226C Vacuum treating apparatus |
| 07/09/2003 | CN1113978C Dual frequency excitation of plasma for film deposition |
| 07/09/2003 | CN1113977C Method for supplying gas for epitaxial growth and its apparatus |
| 07/09/2003 | CN1113826C Method for depositing coating layer on optical fibre while it is being drawn and device for its implementation |
| 07/08/2003 | US6590344 Selectively controllable gas feed zones for a plasma reactor |
| 07/08/2003 | US6590251 Semiconductor devices having metal layers as barrier layers on upper or lower electrodes of capacitors |
| 07/08/2003 | US6590243 Ferroelastic lead germanate thin film and deposition method |
| 07/08/2003 | US6590179 Plasma processing apparatus and method |
| 07/08/2003 | US6589888 Dual frequency plasma enhanced chemical vapor deposition of silicon carbide layers |
| 07/08/2003 | US6589886 Method for manufacturing aluminum oxide film for use in a semiconductor device |
| 07/08/2003 | US6589873 Process for manufacturing a semiconductor device |