Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
07/2003
07/29/2003US6599588 Method for surface treatment of metal enclosure
07/29/2003US6599581 Method of fabricating jig for vacuum apparatus
07/29/2003US6599580 Method for improving electrical conductivity of a metal oxide layer on a substrate utilizing high energy beam mixing
07/29/2003US6599574 Forming smoother, more uniform, higher deposition borophos-phosilicate glass layer with superior gap fill and reflow capability
07/29/2003US6599572 Process for growing metalloid thin films utilizing boron-containing reducing agents
07/29/2003US6599569 Plastic containers with an external gas barrier coating, method and system for coating containers using vapor deposition, method for recycling coated containers, and method for packaging a beverage
07/29/2003US6599447 Zirconium-doped BST materials and MOCVD process forming same
07/29/2003US6599368 System architecture of semiconductor manufacturing equipment
07/29/2003US6599367 Vacuum processing apparatus
07/29/2003US6599178 Diamond cutting tool
07/29/2003US6598610 Method of depositing a thick dielectric film
07/29/2003US6598559 Temperature controlled chamber
07/24/2003WO2003060978A1 Cvd method and device for forming silicon-containing insulation film
07/24/2003WO2003060976A1 Contamination suppression in chemical fluid deposition
07/24/2003WO2003060970A1 Semiconductor integrated circuit device manufacturing method
07/24/2003WO2003060969A1 Processing device and processing method
07/24/2003WO2003060968A1 Boat for heat treatment and vertical heat treatment equipment
07/24/2003WO2003060967A1 Susceptor for epitaxial growth and epitaxial growth method
07/24/2003WO2003060189A1 Emissivity-change-free pumping plate kit in a single wafer chamber
07/24/2003WO2003060188A1 Showerhead assembly for a processing chamber
07/24/2003WO2003060187A1 Process chamber having component with yttrium-aluminum coating
07/24/2003WO2003060186A1 Chamber hardware design for titanium nitride atomic layer deposition
07/24/2003WO2003060185A1 Anti-corrosive metal reaction chamber for chemical vapour deposition or rapid thermal annealing process
07/24/2003WO2003060184A2 Method and apparatus for forming silicon containing films
07/24/2003WO2003060183A1 Method and installation for the densification of substrates by means of chemical vapour infiltration
07/24/2003WO2003059816A1 HIGHLY PURE ULTRA-FINE SiOX POWDER AND METHOD FOR PRODUCTION THEREOF
07/24/2003WO2003009364A3 Low dielectric constant layers
07/24/2003WO2002093630A3 Deposition of tungsten silicide films
07/24/2003WO2002093623A3 Assembly comprising heat distributing plate and edge support
07/24/2003WO2002055246A3 Coated saw blade
07/24/2003US20030139835 System for determining dry cleaning timing, method for determining dry cleaning timing, dry cleaning method, and method for manufacturing semiconductor device
07/24/2003US20030139064 Method for forming dielectric thin film and dielectric thin film formed thereby
07/24/2003US20030139062 Method for fabricating an ultralow dielectric constant material
07/24/2003US20030139035 Reacting a gas mixture containing hydrogen, argon, an aliphatic unsaturated hydrocarbon with double or triple bond, and an organosilicon compound in a plasma to deposit silicon carbide on a substrate
07/24/2003US20030139026 Methods of forming binary noncrystalline oxide analogs of silicon dioxide
07/24/2003US20030139005 Process conditions and precursors for atomic layer deposition (ald) of al2o3
07/24/2003US20030138999 Laser irradiation apparatus
07/24/2003US20030138645 Condensation copolymerization to form a polyethersiloxane biocompatible coatings for medical implants; gas phase polymerization
07/24/2003US20030138619 Plasma treatment of porous materials
07/24/2003US20030138611 Multilayer structure used especially as a material of high relative permittivity
07/24/2003US20030138562 Methods for silicon oxide and oxynitride deposition using single wafer low pressure CVD
07/24/2003US20030138367 System and method for the abatement of toxic constituents of effluent gases
07/24/2003US20030138242 Vapor flow controller
07/24/2003US20030137737 Color shifting carbon-containing interference pigments and foils
07/24/2003US20030137736 Color shifting carbon-containing interference pigments and foils
07/24/2003US20030137250 Segmented electrode apparatus and method for plasma processing
07/24/2003US20030136670 Mobile plating system and method
07/24/2003US20030136520 Ceramic substrate support
07/24/2003US20030136517 Vacuum-processing apparatus and method for vacuum-processing an object
07/24/2003US20030136514 Method of supercritical processing of a workpiece
07/24/2003US20030136428 Solution of hydrogen fluoride and nitric acid; then inert gas flow
07/24/2003US20030136365 Exhaust pipe with reactive by-product adhesion preventing means and method of preventing the adhesion
07/24/2003US20030136332 In situ application of etch back for improved deposition into high-aspect-ratio features
07/24/2003US20030136265 Abatement of effluents from chemical vapor deposition processes using organometallic source reagents
07/24/2003CA2471596A1 Contamination suppression in chemical fluid deposition
07/24/2003CA2445501A1 Method and installation for the densification of substrates by means of chemical vapour infiltration
07/23/2003EP1329540A2 An apparatus for the delivery of precursors in the vapour phase to epitaxial reactor sites
07/23/2003EP1329534A2 Combination CVI/CVD and heat treat susceptor lid
07/23/2003EP1328982A2 Device enclosures and devices with integrated battery
07/23/2003EP1251973A4 Plasma-deposited coatings, devices and methods
07/23/2003EP1131838A4 Self-oriented bundles of carbon nanotubes and method of making same
07/23/2003CN1432147A Flow control of process gas in semiconductor mfg.
07/23/2003CN1432071A Visibly marked parts and method for using same
07/23/2003CN1432035A Barrier layer for polymers and containers
07/23/2003CN1431716A Semiconductor device and mfg. method of semiconductor device
07/23/2003CN1115717C Mfg. Process for semiconductor device
07/23/2003CN1115596C Light receiving member and its prodn. tech, electrophotographic appts. and electrophotographic method
07/23/2003CN1115426C Appts. for mfg. silica film and method for mfg. silica film using same
07/23/2003CN1115425C Gas injection system for semiconductor processing
07/22/2003US6597117 Plasma coil
07/22/2003US6597029 Nonvolatile semiconductor memory device
07/22/2003US6596968 Method of producing through-hole in aromatic polyimide film
07/22/2003US6596655 Silicon oxide layer produced by plasma assisted chemical vapor deposition of an organosilane, using RF or microwave power to generate reactive oxygen atoms
07/22/2003US6596654 Gap fill for high aspect ratio structures
07/22/2003US6596653 Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD
07/22/2003US6596652 Method of fabricating low dielectric constant film
07/22/2003US6596649 Method and apparatus for supplying gas used in semiconductor processing
07/22/2003US6596636 ALD method to improve surface coverage
07/22/2003US6596627 Very low dielectric constant plasma-enhanced CVD films
07/22/2003US6596344 Method of depositing a high-adhesive copper thin film on a metal nitride substrate
07/22/2003US6596343 Tetraethylorthosilicate Si(OC2H5)4, as a suitable organometallic compound which, when coming in contact with hydroxyl radicals, decomposes or breaks down into SiO2
07/22/2003US6596340 Method of regulating a high temperature gaseous phase process and use of said method
07/22/2003US6596339 Method and apparatus for non-contact, in-situ temperature measurement of a substrate film during chemical vapor deposition of the substrate film
07/22/2003US6596187 Method of forming a nano-supported sponge catalyst on a substrate for nanotube growth
07/22/2003US6596186 Mask for the selective growth of a solid, a manufacturing method for the mask, and a method for selectively growing a solid using the mask
07/22/2003US6596133 Thin film material layers; microelectronics; PVD target is offset from the central axis to provide material to the substrate at an angle; processing efficiency; copper
07/22/2003US6596123 Method and apparatus for cleaning a semiconductor wafer processing system
07/22/2003US6596095 Epitaxial silicon wafer free from autodoping and backside halo and a method and apparatus for the preparation thereof
07/22/2003US6596091 Method for sweeping contaminants from a process chamber
07/22/2003US6596086 Apparatus for thin film growth
07/22/2003US6596085 Methods and apparatus for improved vaporization of deposition material in a substrate processing system
07/22/2003US6596084 Pyrolytic carbon coating apparatus having feed gas actuator
07/22/2003US6596080 Silicon carbide and method for producing the same
07/22/2003US6595623 Plastic base material and method for the manufacture thereof; and head for ink-jet printer and method for the manufacture thereof
07/22/2003US6595370 Particle filter
07/17/2003WO2003058680A2 Supercritical fluid-assisted deposition of materials on semiconductor substrates
07/17/2003WO2003058679A2 System and method of processing composite substrate within a high throughput reactor
07/17/2003WO2003058644A2 Superhard dielectric compounds and methods of preparation
07/17/2003WO2003057942A1 Methods for silicon oxide and oxynitride deposition using single wafer low pressure cvd
07/17/2003WO2003057706A1 Ruthenium compounds, process for their preparation, and ruthenium-containing thin films made by using the compounds