Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
08/2003
08/07/2003US20030148605 Method of forming an oxidation-resistant TiSiN film
08/07/2003US20030148577 Controlled alignment of catalytically grown nanostructures in a large-scale synthesis process
08/07/2003US20030148223 Integrated circuits is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a nitrogen source in the presence of an electric field. The as-deposited silicon carbide layer
08/07/2003US20030148144 Tool has a substrate with a cutting edge. The tool has a lubricous coating which comprises hexagonal boron nitride in a state of residual compressive stress.
08/07/2003US20030148139 Protective and/or diffusion barrier layer
08/07/2003US20030148105 Process for the production of improved boron coatings
08/07/2003US20030148102 Tetrahedral amorphous carbon film and method of making same
08/07/2003US20030148097 Carbon nano-fiber formed in a twisted state at least a part thereof having a fiber outer diameter of 1 nm*1 mu m, a twist pitch of 1 nm*500 nm and a length of 5 nm and above and catalyst CVD method using carbon containing gas as a raw
08/07/2003US20030148041 First partial device comprising a first waveguide for coupling in microwave energy, a first gas supply apparatus and a first apparatus for evacuating a coating chamber; a second partial device comprising a second waveguide for coupling in microwave
08/07/2003US20030148040 Coating method and aperture plate
08/07/2003US20030148027 Method and apparatus for forming coated units
08/07/2003US20030148020 Method of depositing low dielectric constant silicon carbide layers
08/07/2003US20030146709 Half mirror film producing method and optical element comprising a half mirror film
08/07/2003US20030146084 Posiitoning in vacuum; magnetron sputtering ferromagnetic material on wafer
08/07/2003US20030145950 Workpiece holding mechanism
08/07/2003US20030145902 Gas supply apparatus and gas supply method
08/07/2003US20030145876 Pressure sensing method for determining gas clean end point
08/07/2003US20030145790 Metal film production apparatus and metal film production method
08/07/2003US20030145789 Gas supply device for precursors with a low vapor pressure
08/07/2003US20030145788 Plasma CVD apparatus
08/06/2003EP1333475A1 Method for manufacturing semiconductor device, substrate treater, and substrate treatment system
08/06/2003EP1333462A2 Plasma display panel suitable for high-quality display and production method
08/06/2003EP1333224A2 Gas supply apparatus and gas supply method
08/06/2003EP1332650A1 Atmospheric plasma method for treating sheet electricity conducting materials and device therefor
08/06/2003EP1332241A1 Electrostatically clamped edge ring for plasma processing
08/06/2003EP1178873B1 Superhard material article of manufacture
08/06/2003EP0968142A4 Reactive ion etching of silica structures
08/06/2003EP0815586B1 Integrated circuits having mixed layered superlattice materials and precursor solutions for use in a process of making the same
08/06/2003CN2564573Y Gas exhausting pipe for imporved chemical vapor deposition process
08/06/2003CN1434884A Modified susceptor for use in chemical vapor deposition process
08/06/2003CN1434883A Epitaxial silicon wafer free from autodoping and backside halo
08/06/2003CN1434779A Plastic container for liquid containing volatile organic substance
08/06/2003CN1434483A Semiconductor device and making method thereof
08/06/2003CN1117176C PCVD apparatus and method of manufacturing optical filber, preform rod and jacket tube as well as the optical fibre manufactured therewith
08/06/2003CN1117043C Energy-saving efficient process of preparing composite carbon/carbon material by rapid deposition
08/05/2003US6602829 Method for applying a lubricating layer on an object and object with an adhesive lubricating layer
08/05/2003US6602808 Process for manufacturing semiconductor integrated circuit device including treatment of gas used in the process
08/05/2003US6602806 Thermal CVD process for depositing a low dielectric constant carbon-doped silicon oxide film
08/05/2003US6602796 Depositing a metal film at a first set of process conditions; and continuing to deposit the metal film at a second set of process conditions that are different from the first set of conditions.
08/05/2003US6602784 Radical-assisted sequential CVD
08/05/2003US6602783 Deposition of titanium amides
08/05/2003US6602722 Process for fabricating capacitor having dielectric layer with pervskite structure and apparatus for fabricating the same
08/05/2003US6602560 Method for removing residual fluorine in HDP-CVD chamber
08/05/2003US6602549 Indium source reagent composition, and use thereof for deposition of indium-containing films on subtrates and ion implantation of indium-doped shallow junction microelectronic structures
08/05/2003US6602547 Method of coating particles by vapor deposition
08/05/2003US6602356 Generating aluminum halide gas in external gas generator, passing into internal gas generator including reactive metal to produce reactive metal halide gas, passing mixture over platinum plated substrate, codepositing aluminum and metal
08/05/2003US6602347 Apparatus and method for processing a substrate
08/05/2003US6602323 Exhausting perfluoro compounds (PFC's) produced by etching and/or vapor deposition into a common stream then scrubbing
07/2003
07/31/2003WO2003063216A1 Method of forming a thin film using atomic layer deposition(ald)
07/31/2003WO2003062507A2 Method for manufacturing a free-standing substrate made of monocrystalline semi-conductor material
07/31/2003WO2003062490A2 Ald apparatus and method
07/31/2003WO2003062489A1 Motorized chamber lid
07/31/2003WO2003061885A1 Surface-coated cutting tool
07/31/2003WO2003061859A1 Cleaning process residues on a process chamber component
07/31/2003WO2003038145A3 Chemical vapor deposition system
07/31/2003WO2003035927A3 Gas delivery apparatus for atomic layer deposition
07/31/2003WO2003015481A3 Suspended gas distribution manifold for plasma chamber
07/31/2003US20030143867 Method for forming low dielectric constant interlayer insulation film
07/31/2003US20030143865 Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made
07/31/2003US20030143846 Gas compositions for cleaning the interiors of reactors as well as for etching films of silicon- containing compounds
07/31/2003US20030143841 Integration of titanium and titanium nitride layers
07/31/2003US20030143823 Method of operating a processing chamber having multiple stations
07/31/2003US20030143822 Silicon-based film formation process, silicon-based film, semiconductor device, and silicon-based film formation system
07/31/2003US20030143821 Plasma processing method and method for manufacturing semiconductor device
07/31/2003US20030143820 Method for processing semiconductor wafers in an enclosure with a treated interior surface
07/31/2003US20030143770 Method of heat-treating nitride compound semiconductor layer and method of producing semiconductor device
07/31/2003US20030143747 Active pulse monitoring in a chemical reactor
07/31/2003US20030143410 Method for reduction of contaminants in amorphous-silicon film
07/31/2003US20030143402 Superior toughness and adhesive strength ceramic coating of titanium aluminum carbon nitride-amorphous carbon nanocomposite
07/31/2003US20030143398 Carbon nanotube and method for producing the same, electron source and method for producing the same, and display
07/31/2003US20030143384 Coated cemented carbide body and method for use
07/31/2003US20030143334 Method of preventing cracking in optical quality silica layers
07/31/2003US20030143328 For performing single chamber cyclical layer deposition, combined cyclical layer deposition and plasma- enhanced chemical vapor deposition; plasma-enhanced chemical vapor deposition; and/or chemical vapor deposition
07/31/2003US20030143327 Depositing a catalytic material onto the apex of tip of atomic force microscope; subjecting catalytic material to chemical vapor deposition to initiate growth of carbon nanotube such that carbon nanotube extends from the apex of tip
07/31/2003US20030143321 Application of emission layer to elements of addressable field-emission electrode with the aid of a gas-phase synthesis in hydrogen flow and supply of a carbonaceous gas; dielectric backing is made of high-temperature resistant metal
07/31/2003US20030143319 Forming the flat panel display device on a substrate; bringing the flat panel display device into a chamber; injecting precursors of passivation film into chamber; and forming the passivation film by atomic layer deposition
07/31/2003US20030143134 Gas is supplied and exhausted in the same direction of the flow of a substrate coated by plasma polymerizing
07/31/2003US20030141825 Close coupled match structure for RF drive electrode
07/31/2003US20030141285 Inductively coupled plasma apparatus
07/31/2003US20030141178 Applying gas shock waves to substrate; electronics
07/31/2003US20030141017 Plasma processing apparatus
07/31/2003US20030141016 Exhaust system for processing apparatus
07/31/2003US20030140941 CVD apparatus
07/31/2003US20030140857 Apparatus and method for low pressure CVD deposition of tungsten and tungsten nitride
07/31/2003US20030140854 Apparatus for growing thin films
07/31/2003US20030140853 Substrate processing apparatus
07/31/2003US20030140852 Method and device for regulating the differential pressure in epitaxy reactors
07/31/2003US20030140851 Gas distribution showerhead
07/30/2003EP1330846A1 Electrode and electron emission applications for n-type doped nanocrystalline materials
07/30/2003EP1255876B1 Condensation coating method
07/30/2003EP1144719B1 Polycrystalline diamond layer with optimized surface properties
07/30/2003EP1051536B1 Method for deposition of three- dimensional object
07/30/2003EP0832407B1 Passive gas substrate thermal conditioning apparatus and method
07/30/2003EP0693975B2 Hollow containers with inert or impermeable inner surface through plasma-assisted surface reaction or on-surface polymerization
07/30/2003CN1432663A Coated hard alloy body and its usage
07/30/2003CN1116438C Plasma polymerization enhancement of surface of metal for use in refrigerating and air conditioning
07/30/2003CN1116437C Plasma polymerization on surface of material
07/29/2003US6600008 Aliphatic polyester film and gas barrier film
07/29/2003US6599847 Sandwich composite dielectric layer yielding improved integrated circuit device reliability
07/29/2003US6599594 Comprises silicone-free, anti-adherent coating formed by plasma-enhanced chemical vapor deposition