Patents
Sitemap › C23 - Coating metallic material; Coating material with metallic material; Chemical surface treatment; Diffusion treatment of metallic material; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general; Inhibiting corrosion of metallic material or incrustation in general › C23C - Coating metallic material; Coating material with metallic material; Surface treatment of metallic material by diffusion into the surface, by chemical conversion or substitution; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general › C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes
Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
08/2003
08/20/2003CN1118867C Method and equipment for producing semiconductor device
08/20/2003CN1118588C Gas-phase deposition method for preparing TiO2 gel film
08/19/2003US6608287 Process chamber with rectangular temperature compensation ring
08/19/2003US6607992 Used to prevent the exposure light for exposing the resist from reflecting at a film lying under the resist
08/19/2003US6607987 Method for improving uniformity in batch processing of semiconductor wafers
08/19/2003US6607973 Preparation of high-k nitride silicate layers by cyclic molecular layer deposition
08/19/2003US6607963 Method for forming capacitor of semiconductor device
08/19/2003US6607850 Hard steel articles
08/19/2003US6607846 Covering substrates surfaces with platinum, palladium and/or alloys by plating, welding or vapor deposition to improve chemical resistance
08/19/2003US6607790 Plasma-enhanced vapor deposition of halogen and silicon dioxide from tetraethoxysilane and halogen compound
08/19/2003US6607785 Bubbler
08/19/2003US6607782 Depositing solid particles comprising nitrides, carbides, carbonitrides, borides, oxides, sulfides, and/or silicides; infiltration with gas to form composite
08/19/2003US6607673 Method for manufacturing a diamond cylinder array having dents therein
08/19/2003US6607605 Cleaning of semiconductor process equipment chamber parts using organic solvents
08/19/2003US6607598 Device for protecting medical devices during a coating process
08/19/2003US6606802 Cleaning efficiency improvement in a high density plasma process chamber using thermally hot gas
08/19/2003CA2205221C Plasma cvd method and apparatus
08/14/2003WO2003067671A1 Process for producing photovoltaic devices
08/14/2003WO2003067638A1 Method for manufacturing silicon nitride film using chemical vapor deposition apparatus of single chamber type
08/14/2003WO2003067635A2 Reactor assembly and processing method
08/14/2003WO2003067353A1 Processing device and method of maintaining the device
08/14/2003WO2003066933A1 Method for depositing inorganic/organic films
08/14/2003WO2003066932A1 Corona-generated chemical vapor deposition on a substrate
08/14/2003WO2003066931A1 A method of producing a tin oxide coating
08/14/2003WO2003066930A1 Diamond electrode
08/14/2003WO2003066540A1 Method for coating the quartz burner of an hid lamp
08/14/2003WO2003066521A1 Method and apparatus for producing fine carbon material
08/14/2003WO2003066516A2 Hydrogen power, plasma, and reactor for lasing, and power conversion
08/14/2003WO2003066237A1 Method and apparatus for forming coated units
08/14/2003WO2003025978A3 Method for separating two joined layers of material
08/14/2003WO2003015130A3 Integrated system for oxide etching and metal liner deposition
08/14/2003WO2002063677A8 Formation of a tantalum-nitride layer
08/14/2003WO2002044437A3 High strength alloys and methods for making same
08/14/2003WO2002009155A3 Wafer chuck having with interleaved heating and cooling elements
08/14/2003US20030153186 Apparatus and method using a remote RF energized plasma for processing semiconductor wafers
08/14/2003US20030153181 Improving imaging resolution; coating with hydrophobic material that overcomes water condensation interference
08/14/2003US20030153177 Variable flow deposition apparatus and method in semiconductor substrate processing
08/14/2003US20030153165 Method of forming silicon-based thin film, method of forming silicon-based semiconductor layer, and photovoltaic element
08/14/2003US20030153100 Process for producing PZT films by chemical vapor deposition method
08/14/2003US20030152813 Lanthanide series layered superlattice materials for integrated circuit appalications
08/14/2003US20030152773 Diamond integrated heat spreader and method of manufacturing same
08/14/2003US20030152714 Plasma thin-film deposition method
08/14/2003US20030152702 Method of forming a silica layer for optical waveguide
08/14/2003US20030152701 Method of on-line coating of a film on the inner walls of the reaction tubes in a hydrocarbon pyrolysis reactor
08/14/2003US20030152700 Process for synthesizing uniform nanocrystalline films
08/14/2003US20030152445 Semiconductor processing apparatus comprising chamber partitioned into reaction and transfer sections
08/14/2003US20030151733 Method of calibrating and using a semiconductor processing system
08/14/2003US20030151372 RF plasma processing method and RF plasma processing system
08/14/2003US20030151083 Semiconductor device
08/14/2003US20030151065 Semiconductor element
08/14/2003US20030150858 Plasma coating method
08/14/2003US20030150562 Apparatus and method to control the uniformity of plasma by reducing radial loss
08/14/2003US20030150560 Reactor assembly and processing method
08/14/2003US20030150559 Apparatus for supercritical processing of a workpiece
08/14/2003US20030150476 Removing deposits from silicon electrode plates includes radiating ultrasonic waves toward a surface of the plate having openings of the plurality of gas nozzles from a horn connected to an ultrasonic vibrator
08/14/2003US20030150386 Apparatus for fabricating a semiconductor device
08/14/2003US20030150385 Apparatus for fabrication of thin films
08/14/2003CA2466953A1 Hydrogen power, plasma, and reactor for lasing, and power conversion
08/13/2003EP1335416A1 Preparation of monoalkyl group 15 metal dihalides and dihydrides
08/13/2003EP1335415A1 Organoindium compounds for use in chemical vapour deposition processes
08/13/2003EP1335414A2 Semiconductor processing apparatus
08/13/2003EP1335037A2 Plasma cvd apparatus
08/13/2003EP1334222A1 Cvd reactor with graphite-foam insulated, tubular susceptor
08/13/2003EP1333935A1 Coating formation by reactive deposition
08/13/2003EP1242647B1 Method of depositing transition metal nitride thin films
08/13/2003EP1192292B1 Plasma treatment of thermal cvd tan films from tantalum halide precursors
08/13/2003CN1436360A Method for fault identification in plasma process
08/13/2003CN1436036A Screen protection cover of portable electronic device and mfg. method thereof
08/13/2003CN1435589A Gas supply device and method
08/13/2003CN1118086C Plasma processing apparatus and method for chamber etching of same
08/13/2003CN1117890C Nozzle-injector for arc plasma deposition apparatus
08/13/2003CN1117889C Plasma intensified chemical vapour deposition device
08/13/2003CN1117887C Chemical vapor deposition apparatus for mfg. semiconductor device and its driving method
08/12/2003US6606234 Electrostatic chuck and method for forming an electrostatic chuck having porous regions for fluid flow
08/12/2003US6605848 Semiconductor device with metal gate electrode and silicon oxynitride spacer
08/12/2003US6605735 Ruthenium complex, process for producing the same and process for producing thin film
08/12/2003US6605549 Method for improving nucleation and adhesion of CVD and ALD films deposited onto low-dielectric-constant dielectrics
08/12/2003US6605531 Hole-filling technique using CVD aluminum and PVD aluminum integration
08/12/2003US6605520 Method of forming silicon-germanium film
08/12/2003US6605352 Corrosion and erosion resistant thin film diamond coating and applications therefor
08/12/2003US6605319 Use of integrated polygen deposition and RTP for microelectromechanical systems
08/12/2003US6605312 Depositing ultra-thin film by introducing power output into plasma of plasma chemical vapor deposition or plasma physical vapor deposition in form of a controlled number of power pulses
08/12/2003US6605177 Substrate support with gas feed-through and method
08/12/2003US6605160 Where the surface has an original chemical composition that varies with depth and at least a portion of the surface is missing from the substrate
08/12/2003US6604555 Automatic refill system for ultra pure or contamination sensitive chemicals
08/12/2003US6604493 Liquid material vaporizing and feeding apparatus
08/12/2003US6604492 Vaporizer
08/07/2003WO2003065766A2 Heating in a vacuum atmosphere in the presence of a plasma
08/07/2003WO2003065462A1 Tandem thin-film photoelectric transducer and its manufacturing method
08/07/2003WO2003065424A2 Apparatus for cyclical deposition of thin films
08/07/2003WO2003065386A1 Method of forming transparent conductive film, transparent conductive film, glass substrate having the same and photoelectric transduction unit including the glass substrate
08/07/2003WO2003065132A2 Method and apparatus for process monitoring and control
08/07/2003WO2003064725A1 Gas distribution showerhead
08/07/2003WO2003064724A1 Process for tungsten deposition by pulsed gas flow cvd
08/07/2003WO2003064718A2 Method for selectively coating a portion of a substrate with a gas-carried substance
08/07/2003WO2003064437A1 Copper complexes and process for formation of copper-containing thin films by using the same
08/07/2003WO2003064059A2 Integration of titanium and titanium nitride layers
08/07/2003WO2002044445A9 Method for depositing especially, crystalline layers and device for carrying out the method
08/07/2003US20030149213 Providing a neutral to weakly acidic polymerization inhibitor; used in a chemical vapor deposition process for silicon oxides in electronic material fabrication
08/07/2003US20030148623 Plasma processing device
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