Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
09/2003
09/18/2003US20030172713 Trap apparatus
09/18/2003US20030172508 Rapid cycle chamber having a top vent with nitrogen purge
09/17/2003EP1345260A1 Vapor growth method, semiconductor producing method, and production method for semiconductor device
09/17/2003EP1345255A2 Multilevel pedestal for furnace
09/17/2003EP1345213A1 Magnetic recording medium and method and apparatus for manufacturing the same
09/17/2003EP1344843A2 Film forming method and substrate
09/17/2003EP1344842A2 Method and apparatus for production of metal film
09/17/2003EP1344841A1 Base material for forming diamond film
09/17/2003EP1344247A2 Surface preparation prior to deposition
09/17/2003EP1344243A1 Method and device for treating semiconductor substrates
09/17/2003EP1343927A2 Gallium nitride materials and methods for forming layers thereof
09/17/2003EP1343926A1 Method for depositing especially crystalline layers
09/17/2003EP1343596A1 Surface modification process
09/17/2003EP0996767B1 Reflective surface for cvd reactor walls
09/17/2003CN2573509Y 热处理装置 Heat treatment device
09/17/2003CN1443366A Formation of boride barrier layers using chemisorption techniques
09/17/2003CN1442507A Method of preparing (001) high orientation diamond film using H cation etching diamond nuclear
09/17/2003CN1121511C Apparatus and process for controlled atmosphere chemical vapor deposition
09/17/2003CN1121510C Method of coating edges with diamond like carbon
09/16/2003US6622104 Heat treatment apparatus, calibration method for temperature measuring system of the apparatus, and heat treatment system
09/16/2003US6620971 Reacting a beta-yne-one with a primary or secondary amine; used in chemical vapor deposition
09/16/2003US6620739 Method of manufacturing semiconductor device
09/16/2003US6620723 Formation of boride barrier layers using chemisorption techniques
09/16/2003US6620670 Process conditions and precursors for atomic layer deposition (ALD) of AL2O3
09/16/2003US6620525 Thermal barrier coating with improved erosion and impact resistance and process therefor
09/16/2003US6620520 Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof
09/16/2003US6620498 Coated body with nanocrystalline CVD coating for enhanced edge toughness and reduced friction
09/16/2003US6620481 Magnetic recording medium, magnetic recording medium manufacture method, and information regeneration apparatus
09/16/2003US6620290 Plasma process apparatus
09/16/2003US6620289 Method and apparatus for asymmetric gas distribution in a semiconductor wafer processing system
09/16/2003US6620288 Substrate treatment apparatus
09/16/2003US6620256 Efficient; generates less hazardous waste materials
09/16/2003US6620254 Planetary system workpiece support and method for surface treatment of workpieces
09/16/2003US6620253 Engagement mechanism for semiconductor substrate deposition process kit hardware
09/16/2003US6620252 Metallization module for cathode-ray tube (CRT) applications
09/16/2003US6620247 Thin polycrystalline silicon film forming apparatus
09/16/2003CA2269862C Apparatus and process for controlled atmosphere chemical vapor deposition
09/16/2003CA2206464C Gas removal device
09/12/2003WO2003075309A2 Light source
09/12/2003WO2003074759A1 Apparatus for manufacturing semiconductor or liquid crystal
09/12/2003WO2003074758A1 Method of forming a diamond coating on an iron-based substrate and use of such an iron-based substrate for hosting a cvd diamond coating
09/12/2003WO2003074757A1 Method for selectively removing hydrogen from molecules
09/12/2003WO2003033761A3 Multi-chamber installation for treating objects under vacuum, method for evacuating said installation and evacuation system therefor
09/12/2003WO2003031675A3 Method for diamond coating substrates
09/12/2003WO2002044441A3 Method and device for the metered delivery of low volumetric flows
09/11/2003US20030171005 Semiconductor device and manufacturing method thereof
09/11/2003US20030171004 Deposition method of dielecrtric films having a low dielectric constant
09/11/2003US20030171002 Method of manufacturing a semiconductor device and method of forming a film
09/11/2003US20030170983 Plasma enhanced chemical vapor deposition methods of forming titanium silicide comprising layers over a plurality of semiconductor substrates
09/11/2003US20030170982 Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layers
09/11/2003US20030170981 Method for forming film
09/11/2003US20030170975 Method for forming a metal extrusion free via
09/11/2003US20030170472 Layer forming method, product comprising the layer, optical film, dielectric-coated electrode and plasma discharge apparatus
09/11/2003US20030170464 Heat treating a glass substrate coated with at least a layer comprising diamond-like carbon then, a protective layer is formed on the substrate over the DLC inclusive layer
09/11/2003US20030170458 Base material for forming diamond film and diamond film
09/11/2003US20030170407 Structures and method for producing thereof
09/11/2003US20030170403 Atomic layer deposition apparatus and method
09/11/2003US20030170402 Method of cleaning CVD equipment processing chamber
09/11/2003US20030170390 Comprises reacting titanium chloride and silane
09/11/2003US20030170389 Atomic layer deposition with point of use generated reactive gas species
09/11/2003US20030170388 Method for forming thin film and appatus for forming thin film
09/11/2003US20030170153 Method and apparatus for generating H20 to be used in a wet oxidation process to form SiO2 on a silicon surface
09/11/2003US20030168743 Wiring-inclusive structure and forming method thereof
09/11/2003US20030168736 Method and system for selectively coupling a conductive material to a surface of a semiconductor device
09/11/2003US20030168707 Semiconductor device and method for manufacturing the same
09/11/2003US20030168697 Semiconductor device and method for fabricating the same
09/11/2003US20030168578 Photovoltaic device and manufacturing method thereof
09/11/2003US20030168427 Maintaining an exfoliative oil film on the surface of the drum drier to prevent contamination
09/11/2003US20030168174 Gas cushion susceptor system
09/11/2003US20030168001 ALD method and apparatus
09/11/2003DE3123754C1 Camouflage material for military applications has infrared transparent layer formed on reflecting layer which reflects infrared radiation
09/10/2003EP1343203A2 Method for forming a metal extrusion free via
09/10/2003EP1343177A1 Transparent conductive film and its manufacturing method, and photoelectric transducer comprising it
09/10/2003EP1343176A1 Conductive film, production method therefor, substrate provided with it and photoelectric conversion device
09/10/2003EP1342811A1 Method of forming a film
09/10/2003EP1342810A1 Method for forming thin film, article having thin film, optical film, dielectric coated electrode, and plasma discharge processor
09/10/2003EP1342809A1 Method of forming a low dialectric constant insulation film
09/10/2003EP1341718A1 Method and device for electronic cyclotron resonance plasma deposit of single-wall carbon nanotubes and resulting nanotubes
09/10/2003EP1266045B1 Diamond-like glass thin films
09/10/2003EP1252363B1 Device and method for depositing one or more layers onto a substrate
09/10/2003EP1017613B1 Bulk chemical delivery system
09/10/2003EP0981502B1 Method for depositing a coating layer on an optical fibre while it is being drawn and device for its implementation
09/10/2003CN1441860A Single crystal diamond prepared by CVD
09/10/2003CN1441859A Method for making thick signal crystal diamond layer and gemstones produced from layer
09/10/2003CN1441464A Fluid heating and injecting device for gaseous fluid conveying system
09/10/2003CN1441083A Surface processer
09/10/2003CN1120901C Electronically cyclic resonating, microwave plasma reinforcing metal organic chemically vapor-phase depositing epitaxial system and process
09/10/2003CN1120900C Process for preparing large-area superconductive magnesium boride film two-step chemical gas-phase deposition
09/10/2003CN1120756C Method and apparatus for gas phase coating complex internal surface of hollow articles
09/09/2003US6618561 Stop changing device for a camera
09/09/2003US6618173 Method for automatic prevention of vertical streaks by selectively applying gains to the output signals of optical sensor elements
09/09/2003US6617266 Barium strontium titanate annealing process
09/09/2003US6617261 Structure and method for fabricating GaN substrates from trench patterned GaN layers on sapphire substrates
09/09/2003US6617256 Method for controlling the temperature of a gas distribution plate in a process reactor
09/09/2003US6617248 Method for forming a ruthenium metal layer
09/09/2003US6617231 Method for forming a metal extrusion free via
09/09/2003US6617175 Infrared thermopile detector system for semiconductor process monitoring and control
09/09/2003US6617060 Gallium nitride materials and methods
09/09/2003US6617059 Method of forming silicon carbide film on aluminum nitride, film structure and silicon carbide film
09/09/2003US6617010 Semiconductor thin film and thin film device