Patents
Sitemap › C23 - Coating metallic material; Coating material with metallic material; Chemical surface treatment; Diffusion treatment of metallic material; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general; Inhibiting corrosion of metallic material or incrustation in general › C23C - Coating metallic material; Coating material with metallic material; Surface treatment of metallic material by diffusion into the surface, by chemical conversion or substitution; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general › C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes
Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
08/2003
08/28/2003US20030160956 Method and a system for identifying gaseous effluents, and a facility provided with such a system
08/28/2003US20030159919 Multilayer stacks of magnetic disks; adjusting disk carrier
08/28/2003US20030159781 Device for applying electromagnetic microwave radiation in a plasma cavity
08/28/2003US20030159780 Interfacial structure for semiconductor substrate processing chambers and substrate transfer chambers and for semiconductor substrate processing chambers and accessory attachments, and semiconductor substrate processor
08/28/2003US20030159711 Detecting the endpoint of a chamber cleaning
08/28/2003US20030159657 Elements having erosion resistance
08/28/2003US20030159656 Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD
08/28/2003US20030159655 Apparatus for depositing an insulation layer in a trench
08/28/2003US20030159654 Apparatus for plasma treatment of dielectric bodies
08/28/2003US20030159653 Manifold assembly for feeding reactive precursors to substrate processing chambers
08/28/2003US20030159652 Heating injection apparatus for vapor liquid delivery system
08/28/2003US20030159307 Substrate processing apparatus
08/28/2003DE10205167C1 Inline vacuum deposition device used for treating substrates has a buffer chamber having an inlet side and an outlet side in the region of a discontinuous transport
08/27/2003EP1338674A1 Metal film production apparatus and method
08/27/2003EP1338576A1 Highly tetrahedral amorphous carbon coating on glass
08/27/2003EP1337700A1 Cvd reactor comprising a substrate holder rotatably mounted and driven by a gas flow
08/27/2003EP1337683A1 Method for automatic organisation of microstructures or nanostructures and related device obtained
08/27/2003EP1337489A2 Method of ion beam milling a glass substrate prior to depositing a coating system thereon, and corresponding system for carrying out the same
08/27/2003EP1171645A4 Apparatus for the simultaneous deposition by physical vapor deposition and chemical vapor deposition and method therefor
08/27/2003CN2568672Y Photochemical gas phase deposition appts.
08/27/2003CN1439062A Surface alloyed high temperature alloys
08/27/2003CN1438676A Semiconductor making system
08/27/2003CN1438359A Method for coating SIC protection layer on surface of carbon fiber weaved article
08/27/2003CN1438358A Low-wst technology for quickly growing silicon-base film
08/27/2003CN1438357A Surface treatment source
08/27/2003CN1119614C Wafer carrier and semiconductor apparatus for processing semiconductor substrate
08/27/2003CA2420308A1 Electronic microcomponent incorporating a capacitive structure and development process
08/26/2003US6610968 System and method for controlling movement of a workpiece in a thermal processing system
08/26/2003US6610873 Method for recycling organometallic compound for MOCVD
08/26/2003US6610611 Method of removing diamond coating and method of manufacturing diamond-coated body
08/26/2003US6610428 Controlled conversion of metal oxyfluorides into superconducting oxides
08/26/2003US6610375 Exposed to a plasma beam of nuclear fusion reactors or the like, such as an electron beam, a tungsten layer is formed by the use of a CVD method and has a thickness of 500 micron meters or more. The tungsten layer may be overlaid on a
08/26/2003US6610374 Method of annealing large area glass substrates
08/26/2003US6610373 Magnetic film-forming device and method
08/26/2003US6610362 Chemical vapor deposition apparatus a source of carbon, silicon, boron, and oxygen. That apparatus is then operated under conditions that cause a boron containing carbon doped oxide layer to form on the substrate.
08/26/2003US6610361 Predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin films may be produced that has a stress level of zero, or substantially so.
08/26/2003US6610360 Scratch resistance (SR) of a coated article is improved by buffing the coated article after deposition of the layer(s) of the coating. For example, in certain embodiments a diamond-like carbon (DLC) inclusive layer(s) is deposited on a
08/26/2003US6610211 Method of processing internal surfaces of a chemical vapor deposition reactor
08/26/2003US6610181 Method of controlling the formation of metal layers
08/26/2003US6610169 Semiconductor processing system and method
08/26/2003US6610150 Semiconductor wafer processing system with vertically-stacked process chambers and single-axis dual-wafer transfer system
08/26/2003US6609632 Removable lid and floating pivot
08/21/2003WO2003069668A2 A method of calibrating and using a semiconductor processing system
08/21/2003WO2003069659A1 Cleaning gas and etching gas
08/21/2003WO2003069655A2 Electronic micro component including a capacitive structure
08/21/2003WO2003069029A1 A susceptor provided with indentations and an epitaxial reactor which uses the same
08/21/2003WO2003069022A1 Coil for induction heating
08/21/2003WO2003069021A1 Induction heating coil
08/21/2003WO2003069020A1 System for processing substrate and method for processing substrate
08/21/2003WO2003069018A1 Process for synthesizing uniform nanocrystalline films
08/21/2003WO2003069017A1 Method for modifying surface of solid material, surface-modified solid material and device for modifying surface of solid material
08/21/2003WO2003068699A1 Group iii nitride semiconductor crystal, production method thereof and group iii nitride semiconductor epitaxial wafer
08/21/2003WO2003068383A1 Method for carrying out homogeneous and heterogeneous chemical reactions using plasma
08/21/2003WO2003049172B1 Lanthanide series layered superlattice materials for integrated circuit applications
08/21/2003WO2003031679A3 Method for depositing metal layers employing sequential deposition techniques
08/21/2003WO2003018860A3 Atmospheric pressure wafer processing reactor having an internal pressure control system and method
08/21/2003WO2002067770B1 Implantable device using ultra-nanocrystalline diamond
08/21/2003WO2002054453A9 Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof
08/21/2003US20030158705 Method for avoiding irregular shutoff of production equipment and system for avoiding irregular shutoff
08/21/2003US20030157812 Method and apparatus for modifying the profile of narrow, high-aspect-ratio gaps using RF power
08/21/2003US20030157765 Capacitor with stoichiometrically adjusted dielectric and method of fabricating same
08/21/2003US20030157760 Deposition of tungsten films for dynamic random access memory (DRAM) applications
08/21/2003US20030157746 Composite structure for electronic microsystems and method for production of said composite structure
08/21/2003US20030157744 Method of producing an integrated circuit with a carbon nanotube
08/21/2003US20030157453 Boat for heat treatment and vertical heat treatment apparatus
08/21/2003US20030157378 Film forming method and substrate
08/21/2003US20030157347 Methods for replication, replicated articles, and replication tools
08/21/2003US20030157345 Depositing on substrate an interface layer obtained by converting to plasma mixture that includes at least an organosilicon compound and a nitrogen compound, and depositing on interface layer a barrier layer composed of silicon oxide
08/21/2003US20030157267 Providing a porous dielectric material; plasma curing the porous dielectric material with a fluorine-free plasma gas to produce fluorine-free plasma cured porous dielectric material
08/21/2003US20030157242 Method and apparatus for plasma processing
08/21/2003US20030155404 Filled diamond foam material and method for forming same
08/21/2003US20030155080 Microchip fabrication chamber wafer detection
08/21/2003US20030155076 Semiconductor processing system
08/21/2003US20030155000 Removing water, desorption by feeding second polar gas molecules, inert gas, nitrogen, or ammonia; processing semiconductor and microelectronics
08/21/2003US20030154922 C-chuck insulator strip
08/21/2003US20030154921 Contains flax pulp; no increase in loading material promoting combustion
08/21/2003US20030154880 Solvated ruthenium precursors for direct liquid injection of ruthenium and ruthenium oxide
08/21/2003DE10214973C1 Contact layer system used as an electrical contact comprises three individual metal or alloy layers arranged on a substrate
08/21/2003CA2475589A1 Method for carrying out homogeneous and heterogeneous chemical reactions using plasma
08/21/2003CA2472400A1 Method for modifying surface of solid material, surface-modified solid material and device for modifying surface of solid material
08/20/2003EP1336668A1 Method for forming insulation film
08/20/2003EP1336667A1 Apparatus for coating of hollow articles
08/20/2003EP1336189A1 Device, set and method for carrying a gas or a liquid to a surface through a tube
08/20/2003EP1335997A1 Method and device for controlling the surface temperatures of substrates in a chemical vapour deposition reactor
08/20/2003EP1335829A2 Multilayered optical structures
08/20/2003EP1185722B1 Pecvd of tan films from tantalum halide precursors
08/20/2003EP1183405B1 Method for vacuum treatment of workpieces and vacuum treatment facility
08/20/2003EP1056594A4 A-site and/or b-site modified pbzrtio3 materials and films
08/20/2003EP1049820B1 Method for epitaxial growth on a substrate
08/20/2003CN2567234Y Luminous window device for light chemical vapour deposition equipment
08/20/2003CN1437764A Holding device for treated body
08/20/2003CN1437759A 电极组件 The electrode assembly
08/20/2003CN1437433A Inductance coupling plasma processing apparatus
08/20/2003CN1437228A Material for insulation film containing organic silane compound its producing method and semiconductor device
08/20/2003CN1437226A Manufacture of carbon-containing dielectric layer
08/20/2003CN1437220A Shower nozzle type gas supply device and semiconductor device manufacturing equipment with nozzle type gas supply device
08/20/2003CN1437219A Filling container for solid organic metal compound use and its filling method
08/20/2003CN1437191A Tetrahedral amorphous carbon film and producing method thereof
08/20/2003CN1436876A Chemical Vapor deposition process of tungsten atom layer
08/20/2003CN1436602A Nozzle and its using method
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