Patents
Sitemap › C23 - Coating metallic material; Coating material with metallic material; Chemical surface treatment; Diffusion treatment of metallic material; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general; Inhibiting corrosion of metallic material or incrustation in general › C23C - Coating metallic material; Coating material with metallic material; Surface treatment of metallic material by diffusion into the surface, by chemical conversion or substitution; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general › C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes
Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
10/2003
10/02/2003WO2003081956A1 Device and method for forming film for organic el element using inductive coupling cvd
10/02/2003WO2003081659A1 Substrate processing device and substrate processing method, fast rotary valves, cleaning method
10/02/2003WO2003081652A1 Cvd apparatus and method of cleaning the cvd apparatus
10/02/2003WO2003081651A1 Cvd apparatus and method of cleaning the cvd apparatus
10/02/2003WO2003081650A1 Plasma processing device and production method of thin-film forming substrate
10/02/2003WO2003081647A1 Material supply system in semiconductor device manufacturing plant
10/02/2003WO2003081216A2 Process monitoring using infrared optical diagnostics
10/02/2003WO2003080893A1 Method for coating a substrate and device for carrying out the method
10/02/2003WO2003080892A1 Low contamination components for semiconductor processing apparatus and methods for making components
10/02/2003WO2003080887A2 Methods and apparatus for annealing in physical vapor deposition systems
10/02/2003WO2003080530A1 Glass substrate and process for producing the same
10/02/2003WO2003052174A3 Boron doped diamond
10/02/2003US20030187248 Using an aromatic isothiocyanate; forming adduct
10/02/2003US20030186561 Deposition of film layers
10/02/2003US20030186560 Gaseous phase growing device
10/02/2003US20030186541 Gradient barrier layer for copper back-end-of-line technology
10/02/2003US20030186517 Method of and apparatus for manufacturing semiconductor device
10/02/2003US20030186516 Method for fabricating semiconductor device
10/02/2003US20030186515 Methods for simultaneously depositing layers over pluralities of discrete semiconductor substrate
10/02/2003US20030186512 In a two-dimensional or three-dimensional lattice; coulomb blocking devices using quantum dots.
10/02/2003US20030186495 Process for growing metal or metal carbide thin films utilizing boron-containing reducing agents
10/02/2003US20030186087 Gradient barrier layer for copper back-end-of-line technology
10/02/2003US20030186000 Depositing a low dielectric constant film comprising silicon, carbon, and hydrogen; treating the deposited film with a plasma of helium, hydrogen, or a mixture thereof at conditions sufficient to increase the hardness of film
10/02/2003US20030185999 Method for forming dielectric layers
10/02/2003US20030185998 Growing an amorphous carbon- based membrane on a porous substrate at a low temperature, performing a surface modification by bombarding membrane with energized gas; baking so that a membrane having a gas separation effect is formed
10/02/2003US20030185985 Depositing a block copolymer on a substrate to form an ordered meso- scale structured array of the polymer materials, forming catalytic metal dots based on meso-scale structure, and growing nano-scale objects on dots to form an ordered array
10/02/2003US20030185983 Particles are exposed in location-selective manner to external adjustment forces and/or plasma conditions are subjected to location-selective change to apply particles onto a substrate surface mask-free and/ or subject it to plasma treatment
10/02/2003US20030185982 Method and device for treating surfaces using a glow discharge plasma
10/02/2003US20030185981 Chemical vapor deposition method using alcohol for forming metal oxide thin film
10/02/2003US20030185980 Supplying a compound containing at least one kind of metal element onto a substrate, irradiating substrate with energy particles in order to introduce metal element into substrates
10/02/2003US20030185979 For preparing vaporized reactants for chemical vapor deposition with a magnetically driven, seal-less motor
10/02/2003US20030185966 Detecting chemiluminescent radiation in the cleaning of a substrate processing chamber
10/02/2003US20030185965 Evaluating textured coating on structure by: directing a beam of electrons onto surface grains of textured coating causing electrons to be backscattered, detecting backscattered electrons and generating a signal image, evaluating signal
10/02/2003US20030183567 For tuning an a.c. voltage component of the electric field, in crossed electric and magnetic fields
10/02/2003US20030183341 Fixing structures and supporting structures of ceramic susceptors, and supporting members thereof
10/02/2003US20030183340 Fixing structures and supporting structures of ceramic susceptors, and supporting members thereof
10/02/2003US20030183244 Method of cleaning a semiconductor processing chamber
10/02/2003US20030183243 Cleaning residues from surfaces in a chamber by sputtering sacrificial substrates
10/02/2003US20030183171 Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
10/02/2003US20030183169 Internal electrode type plasma processing apparatus and plasma processing method
10/02/2003US20030183156 Chemical vapor deposition methods, atomic layer deposition methods, and valve assemblies for use with a reactive precursor in semiconductor processing
10/02/2003US20030183121 Copper source liquid for mocvd processes and method for the preparation thereof
10/01/2003EP1348779A1 Coated cutting tool for turning of steel
10/01/2003EP1348778A1 Method for obtaining high quality InGaAsN semiconductor
10/01/2003EP1348483A1 Excimer uv photo reactor
10/01/2003EP1348230A1 Susceptor pocket profile to improve process performance
10/01/2003EP1348041A1 Plasma electroplating
10/01/2003EP1348040A2 Windows used in thermal processing chambers
10/01/2003EP1348039A2 Installation wherein is performed an operation requiring control of atmosphere inside a chamber
10/01/2003EP1242656B1 Method and apparatus for delivering precursors to a plurality of epitaxial reactor sites
10/01/2003CN1446374A Low-dielectric silicon nitride film and method of making the same, seimiconductor device and fabrication process thereof
10/01/2003CN1446373A Device and method for processing substrate
10/01/2003CN1446270A Barrier coating
10/01/2003CN1446269A Plasma coating method
10/01/2003CN1446124A Plasma Deposited barrier coating comprising and interface layer, method for obtaining same and container coated therewith
10/01/2003CN1445865A Light generating device and manufacturing method thereof
10/01/2003CN1445827A Electric liquid processing device
10/01/2003CN1445826A Method for cleaning plasma processing device
10/01/2003CN1445817A Method and device for epitaxial coating semiconductor chip, and semiconductor chip opitaxial coated
10/01/2003CN1445233A ALkyl VA group metal compound
10/01/2003CN1445230A 有机铟化合物 Organic indium compound
10/01/2003CN1445164A Technique for preparing ceramic powder of titanium carbide by using plasma chemical gas phase synthesis method
10/01/2003CN1445163A Technique for preparing ceramic powder of titanium carbide by using plasma chemical gas phase synthesis method
10/01/2003CN1445161A Technique for preparing silicon nitride powders with high alpha phase by using plasma chemical vapor phase process
09/2003
09/30/2003US6627973 Void-free interlayer dielectric (ILD0) for 0.18-micron flash memory semiconductor device
09/30/2003US6627859 Method and apparatus for temperature control of heater
09/30/2003US6627560 Method of manufacturing semiconductor device
09/30/2003US6627559 Coating film
09/30/2003US6627545 Method of forming silicon oxide layer and method of manufacturing thin film transistor thereby
09/30/2003US6627538 Focused ion beam deposition
09/30/2003US6627535 Methods and apparatus for forming a film on a substrate
09/30/2003US6627533 Method of manufacturing an insulation film in a semiconductor device
09/30/2003US6627532 Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition
09/30/2003US6627462 Semiconductor device having a capacitor and method for the manufacture thereof
09/30/2003US6627335 Improved cutting ability due to the co-presence of particles having large particle diameters in a direction horizontal to the base material and particles having small diameters are in the same direction
09/30/2003US6627268 Sequential ion, UV, and electron induced chemical vapor deposition
09/30/2003US6627267 Flash evaportaion; glow discharges
09/30/2003US6627260 Deposition methods
09/30/2003US6627049 Method of making grooving or parting insert
09/30/2003US6627039 Plasma processing methods and apparatus
09/30/2003US6627038 Processing chamber
09/30/2003US6626999 Vapor forming devices
09/30/2003US6626998 Plasma generator assembly for use in CVD and PECVD processes
09/30/2003US6626997 Continuous processing chamber
09/30/2003US6626188 Introducing hydrogen gas into chamber; generating a reactive plasma of hydrogen gas in chamber; introducing mixture of hydrogen gas and nitrogen gas into chamber; generating reactive plasma of mixture of hydrogen gas and nitrogen gas
09/30/2003US6626187 Cleaning the reaction chamber by removing high molecular weight micro-particles; inserting a photoresist coated wafer and introducing a mixture of hydrogen and nitrogen; reacting the gases with photoresist on the dummy
09/30/2003US6626186 Method for stabilizing the internal surface of a PECVD process chamber
09/30/2003US6626185 Removal deposits in vapor deposition enclosures
09/30/2003US6625862 Method of manufacturing a processing apparatus
09/25/2003WO2003079422A1 Vaporizer, various devices using the same, and vaporizing method
09/25/2003WO2003079421A1 Method of depositing cvd thin film
09/25/2003WO2003079405A2 Method for forming thin film layers by simultaneous doping and sintering
09/25/2003WO2003079404A2 An improved substrate holder for plasma processing
09/25/2003WO2003078874A2 Coated microfluidic delivery system
09/25/2003WO2003078681A1 Device for depositing thin layers on a substrate
09/25/2003WO2003078680A1 Method of surface texturizing
09/25/2003WO2003078679A1 Apparatus and method for applying diamond-like carbon coatings
09/25/2003WO2003078678A1 Method for forming interconnection metal layer, method for selectively forming metal, apparatus for selectively forming metal, and substrate apparatus
09/25/2003WO2003009318A3 Support with getter-material for microelectronic, microoptoelectronic or micromechanical device
09/25/2003WO2003009317A3 Support with integrated deposit of gas absorbing material for manufacturing microelectronic, microoptoelectronic or micromechanical devices
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