Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
10/2003
10/23/2003US20030196996 Thermal flux processing by scanning
10/23/2003US20030196995 Annealing a semiconductor substrate with high ramp-up and ramp-down rates for good control and homogenous heat exposure on the wafer by using a continuous wave electromagnetic radiation source, a stage, optics, and translation mechanism
10/23/2003US20030196993 Thermal flux deposition by scanning
10/23/2003US20030196763 Liquid material evaporation apparatus for semiconductor manufacturing
10/23/2003US20030196754 Plasma processing methods and apparatus
10/23/2003US20030196680 Process modules for transport polymerization of low epsilon thin films
10/23/2003US20030196604 Padded clamp ring with edge exclusion for deposition of thick AlCu/AlSiCu/Cu metal alloy layers
10/23/2003US20030196603 Integrated precursor delivery system
10/23/2003US20030196602 Method and apparatus for neutralization of ion beam using AC ion source
10/23/2003US20030196600 Method and apparatus for pulsed detonation coating of internal surfaces of small diameter tubes and the like
10/23/2003CA2478624A1 Gas driven planetary rotation apparatus and methods for forming silicon carbide layers
10/22/2003EP1355348A2 Method of manufacturing amorphous metal oxide film and methods of manufacturing capacitance element having said film and semiconductor device
10/22/2003EP1354981A2 Film-forming apparatus and film-forming method
10/22/2003EP1354980A1 Method for forming a porous SiOCH layer.
10/22/2003EP1354181A1 Sensor for determining the state of parameters on mechanical components while using amorphous carbon layers having piezoresistive properties
10/22/2003EP1354072A1 Carbonitride coated component of semiconductor processing equipment and method of manufacturing thereof
10/22/2003EP1353693A2 Pharmaceutical combination containing a 4-quinazolineamine and another anti-neoplastic agent for the treatment of cancer
10/22/2003EP1173632B1 Reaction chamber for an epitaxial reactor
10/22/2003EP1153000B1 Method for making a bowl in thermostructural composite material in particular for a monocrystalline silicon producing installation
10/22/2003EP0831963B1 Microfabricated porous membranes with bulk support
10/22/2003EP0819105B1 Chemical vapour infiltration method with variable infiltration parameters
10/22/2003CN1451177A Improved flourine deped silicon dioxide film
10/22/2003CN1451029A Color shifting carbon-containing interference pigments
10/22/2003CN1450981A Adhesive composite coating for diamond and diamond-containing materials and method for producing coating
10/22/2003CN1450847A Plasma process apparatus and method
10/22/2003CN1450610A Method of depositing vapor phase organic matter and apparatus of depositing vapor phose organic matter using same
10/22/2003CN1450598A Nozzle of CVD equipment for mfg of semiconductor device
10/22/2003CN1450198A Vapour deposition device for metal organic compound
10/22/2003CN1125531C Electrostatic chuck assembly
10/22/2003CN1125484C Method for forming protective layer on semiconductor chip
10/22/2003CN1125190C Jet plasma process and apparatus for deposition of coatings and obtd. coating
10/21/2003US6636413 Electrostatic chucks and process for producing the same
10/21/2003US6635589 In a vacuum chamber, radiating an ultraviolet light onto the silicon oxide film heated to 300-700 degrees C. in a hydrogen nitride atmosphere; low temperature; nitriding
10/21/2003US6635583 Silicon carbide deposition for use as a low-dielectric constant anti-reflective coating
10/21/2003US6635575 Methods and apparatus to enhance properties of Si-O-C low K films
10/21/2003US6635571 Depositing aluminum using plasma deposition with organoaluminum as source, repeating to form an aluminum thin film, and further oxidizing using oxygen plasma to form aluminum oxide film thus obtaining aluminum oxide of high
10/21/2003US6635570 PECVD and CVD processes for WNx deposition
10/21/2003US6635569 Method of passivating and stabilizing a Ti-PECVD process chamber and combined Ti-PECVD/TiN-CVD processing method and apparatus
10/21/2003US6635229 Entering gaseous perfluorocarbon into plasma reactor or thermal chamber downstream from use in semiconductor fabrication process, altering to species selected from bromine-containing and iodine-containing carbon species
10/21/2003US6635144 Apparatus and method for detecting an end point of chamber cleaning in semiconductor equipment
10/21/2003US6635117 Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system
10/21/2003US6635116 Residual oxygen reduction system
10/21/2003US6635115 Tandem process chamber
10/21/2003US6635114 High temperature filter for CVD apparatus
10/21/2003US6634882 Susceptor pocket profile to improve process performance
10/21/2003US6634619 Pressure control valve having enhanced durability
10/21/2003US6634314 Atomic layer deposition method and semiconductor device fabricating apparatus having rotatable gas injectors
10/21/2003CA2277394C Plasma jet chemical vapor deposition system having a plurality of distribution heads
10/16/2003WO2003086029A1 Gel and powder making
10/16/2003WO2003085711A1 VAPOR PHASE GROWTH METHOD FOR Al-CONTAINING III-V GROUP COMPOUND SEMICONDUCTOR, AND METHOD AND DEVICE FOR PRODUCING Al-CONTAINING III-V GROUP COMPOUND SEMICONDUCTOR
10/16/2003WO2003085693A1 An atmospheric pressure plasma assembly
10/16/2003WO2003085165A1 Plasma cvd film forming apparatus and method for manufacturing cvd film coating plastic container
10/16/2003WO2003085164A1 Method and apparatus for preparing vaporized reactants for chemical vapor deposition
10/16/2003WO2003085163A1 Component comprising a masking layer
10/16/2003WO2003085162A1 Method for coating a component
10/16/2003WO2003085160A1 Device and method for forming thin-film, and method of manufacturing electronic component using the device
10/16/2003WO2003085153A1 Thermal insulation layer system
10/16/2003WO2003084969A1 Silicon source reagent compositions, and method of making and using same for microelectronic device structure
10/16/2003WO2003058679A3 System and method of processing composite substrate within a high throughput reactor
10/16/2003WO2003029514A3 Method of depositing cvd and ald films onto low-dielectric-constant dielectrics
10/16/2003WO2003027350A9 Amorphous hydrogenated carbon film
10/16/2003WO2003020449A9 System for removing deposited material from within a semiconductor fabrication device
10/16/2003WO2003019619A3 A low-k pre-metal dielectric semiconductor structure
10/16/2003WO2003015136A3 Method and apparatus for vacuum pumping a susceptor shaft
10/16/2003WO2002103782A3 Barrier enhancement process for copper interconnects
10/16/2003WO2002095807A3 Silicon fixtures useful for high temperature wafer processing
10/16/2003WO2002081788A3 Method for h2 recycling in semiconductor processing system
10/16/2003WO2002067302A3 Rhodium-rich oxygen barriers
10/16/2003US20030194881 Process for manufacturing a semiconductor device
10/16/2003US20030194880 Use of cyclic siloxanes for hardness improvement
10/16/2003US20030194862 Chemical vapor deposition methods, and atomic layer deposition method
10/16/2003US20030194861 Reactive gaseous deposition precursor feed apparatus
10/16/2003US20030194829 Semiconductor substrate deposition processor chamber liner apparatus
10/16/2003US20030194825 Deposition of gate metallization for active matrix liquid crystal display (AMLCD) applications
10/16/2003US20030194508 Deposition methods utilizing microwave excitation, and deposition apparatuses
10/16/2003US20030194496 Reacting a hydrogen gas and an oxygen-containing or an oxygen-free organosilicon compound to form a silicon carbide deposit
10/16/2003US20030194495 Crosslink cyclo-siloxane compound with linear bridging group to form ultra low k dielectric
10/16/2003US20030194493 Multi-station deposition apparatus and method
10/16/2003US20030194482 Apparatus and method for processing a substrate
10/16/2003US20030193061 Electronic component and method for producing an electronic component
10/16/2003US20030193010 Method and apparatus for early detection of material accretion and peeling in plasma system
10/16/2003US20030192864 Plasma processing apparatus and method
10/16/2003US20030192645 Method and apparatus for creating circumferential process gas flow in a semiconductor wafer plasma reactor chamber
10/16/2003US20030192569 Fluorine process for cleaning semiconductor process chamber
10/16/2003US20030192568 Striking a plasma; flowing helium or argon; delivering radio frequency (RF) power
10/16/2003US20030192478 Plasma CVD apparatus comprising susceptor with ring
10/16/2003US20030192477 Method of replacing at least a portion of semiconductor substrate deposition process kit hardware, and method of depositing materials over a plurality of semiconductor substrates
10/16/2003US20030192471 Method and device for depositing in particular organic layers using organic vapor phase deposition
10/15/2003EP1352991A1 Method of preventing cracking in optical quality silica layers
10/15/2003EP1352990A1 Apparatus and method for CVD
10/15/2003EP1352989A1 Object having a masking layer
10/15/2003EP1352988A1 Method for coating an object
10/15/2003EP1352985A1 Thermal barrier coating system
10/15/2003EP1352697A2 Coated cutting tool insert
10/15/2003EP1352434A1 System for the conversion of water into non-oxidizing gases and electronic devices containing said systems
10/15/2003EP1352417A2 Device for the plasma-mediated working of surfaces on planar substrates
10/15/2003EP1352107A2 An ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device, a method for fabricating the same, and an electronic device containing the same
10/15/2003EP1352103A1 A surface coating of a carbide or a nitride
10/15/2003EP1202995B1 Group(iii)-metal-hydrides with a guanidino-type ligand
10/15/2003EP1036214B1 Mixed frequency cvd process and apparatus