Patents
Sitemap › C23 - Coating metallic material; Coating material with metallic material; Chemical surface treatment; Diffusion treatment of metallic material; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general; Inhibiting corrosion of metallic material or incrustation in general › C23C - Coating metallic material; Coating material with metallic material; Surface treatment of metallic material by diffusion into the surface, by chemical conversion or substitution; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general › C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes
Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
10/2003
10/30/2003US20030203113 Method for atomic layer deposition (ALD) of silicon oxide film
10/30/2003US20030203112 Chemical vapor deposition method and related material
10/30/2003US20030203111 Copper metal precursor
10/30/2003US20030203109 Comprises chamber with vacuum exhaust line extending therefrom in which effluent product is deposited over internal walls; semiconductors/integrated circuits
10/30/2003US20030203106 Pyrolytic carbon coating; for use with heart valves
10/30/2003US20030203102 Raw material compounds for use in CVD, and chemical vapor depsoition of ruthenium compound thin films
10/30/2003US20030201586 Apparatus and method for supplying cesium using injector
10/30/2003US20030201541 Method for fabricating metal electrode with atomic layer deposition (ALD) in semiconductor device
10/30/2003US20030201540 Insulating layers in semiconductor devices having a multi-layer nanolaminate structure of SiNx thin film and BN thin film and methods for forming the same
10/30/2003US20030201485 Using tantalum pentoxide and niobium pentoxide as dielectric between electrodes; simplification, accuracy
10/30/2003US20030201264 Ceramic susceptor
10/30/2003US20030201240 Maintenance method and system for plasma processing apparatus
10/30/2003US20030201162 Monitoring optical emission; determination power spectra
10/30/2003US20030201069 Tunable focus ring for plasma processing
10/30/2003US20030201068 Apparatus associatable with a deposition chamber to enhance uniformity of properties of material layers formed on semiconductor substrates therein
10/30/2003US20030201034 Chemisorption layer
10/30/2003US20030200984 Highly efficient remote clean process for process chambers in deposition tools
10/30/2003US20030200929 Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
10/30/2003US20030200928 Shadow frame with cross beam for semiconductor equipment
10/30/2003US20030200926 Chemical vapor deposition apparatus
10/30/2003US20030200925 Methods for forming phosphorus- and/or boron-containing silica layers on substrates
10/30/2003US20030200924 System and method for real time deposition process control based on resulting product detection
10/30/2003US20030200917 Atomic layer deposition methods and chemical vapor deposition methods
10/30/2003US20030200916 Vapor phase growth method of oxide dielectric film
10/30/2003US20030200914 Diamond film and method for producing the same
10/29/2003EP1357587A1 Process for catalytic chemical vapor deposition
10/29/2003EP1357586A2 Vapor phase growth method of oxide dielectric film
10/29/2003EP1357583A1 Sheet-fed treating device
10/29/2003EP1357202A1 Silicon nitride film forming apparatus and film forming method
10/29/2003EP1357042A1 Production device for dlc film-coated plastic container and production method therefor
10/29/2003EP1356503A2 Method and system for rotating a semiconductor wafer in processing chambers
10/29/2003EP1356501A2 Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof
10/29/2003EP1356499A2 Wafer chuck with interleaved heating and cooling elements
10/29/2003EP1356133A1 Method for depositing thin layers on a porous substrate, fuel cell and fuel cell comprising such a thin layer
10/29/2003EP1356132A2 Volatile organometallic complexes of lowered reactivity suitable for use in chemical vapor deposition of metal oxide films
10/29/2003EP1355864A2 Pre-polycoating of glass substrates
10/29/2003EP1355686A1 Methods for surface modification
10/29/2003CN1452778A E-beam/microwave gas jet PECVD method and apparatus for depositing and/or surface modification of thin film material
10/29/2003CN1452507A Gas cabinet assembly comprising sorbent-based gas storage and delivery system
10/29/2003CN1452232A Workpiece fixer for machining apparatus and machining apparatus using said fixer
10/29/2003CN1452222A Method for mfg. semiconductor device
10/29/2003CN1451781A Device and method for reinforcing organic metal chemical vapor deposition film
10/29/2003CN1451780A Feed stock compound for CVD and process for CVD of ruthenium or ruthenium compound film
10/29/2003CN1126155C Improved silica insulation film with reduced dielectric constant and method of forming same
10/29/2003CN1125890C Apparatus and method for nucleotion and deposition of diamond using hot filament DC plasma
10/29/2003CN1125719C Diamond coated tools and process for making
10/28/2003US6639196 Having cooling element and closed circuit for self contained circulation of gas over refractory composites
10/28/2003US6639080 Reacting bis(trifluoromethyl)pyrazole with a stoichiometric excess of copper oxide(Cu2O) and recovering bis(trifluoromethyl)pyrazolyl copper, or adding Lewis base ligand to form an adduct of above and Lewis base
10/28/2003US6638886 Plasma fluorine resistant alumina ceramic material and method of making
10/28/2003US6638880 Substrate holder, a blow inlet for source gas, exhaust outlets for source gas; where direction of flow of source gas relative the substrate is varied with time using valves; barium strontium titanate films
10/28/2003US6638879 Method for forming nitride spacer by using atomic layer deposition
10/28/2003US6638876 Method of forming dielectric films
10/28/2003US6638862 Radical-assisted sequential CVD
10/28/2003US6638860 Method and apparatus for processing substrates and method for manufacturing a semiconductor device
10/28/2003US6638859 Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition
10/28/2003US6638839 Hot-filament chemical vapor deposition chamber and process with multiple gas inlets
10/28/2003US6638810 Tantalum nitride CVD deposition by tantalum oxide densification
10/28/2003US6638609 Coated inserts for rough milling
10/28/2003US6638580 Apparatus and a method for forming an alloy layer over a substrate using an ion beam
10/28/2003US6638571 Coated cemented carbide cutting tool member and process for producing the same
10/28/2003US6638569 Apparatus and method for coating substrates with vacuum depositable materials
10/28/2003US6638474 method of making cemented carbide tool
10/28/2003US6638392 Plasma process apparatus
10/28/2003US6638359 Deposited film forming apparatus and deposited film forming method
10/28/2003US6637643 Attaching a foil which comprises the bond coating to the substrate surface, and then fusing the foil to the substrate surface, so that the bond coating adheres to the substrate.
10/28/2003US6637475 Bulk chemical delivery system
10/23/2003WO2003088342A1 Method for producing material of electronic device
10/23/2003WO2003088339A1 Vertical thermal treatment equipment
10/23/2003WO2003088338A1 Plasma processing device and plasma processing method
10/23/2003WO2003088334A2 Deposition of gate metallization and passivation layers for active matrix liquid crystal display (amlcd) applications
10/23/2003WO2003088328A2 Method for production of a capacitive structure above a metallisation level of an electronic component
10/23/2003WO2003088327A2 Deposition of silicon layers for active matrix liquid crystal displays
10/23/2003WO2003088326A2 Method of loading a wafer onto a wafer holder to reduce thermal shock
10/23/2003WO2003088325A1 Gas driven planetary rotation apparatus and methods for forming silicon carbide layers
10/23/2003WO2003088314A2 Remote monitoring system for chemical liquid delivery
10/23/2003WO2003087431A2 Deposition methods utilizing phased array microwave excitation, and deposition apparatuses
10/23/2003WO2003087430A1 Processing system, processing method and mounting member
10/23/2003WO2003087429A1 Automatic valve control system in plasma chemical vapor deposition system and chemical vapor deposition system for deposition of nano-scale multilayer film
10/23/2003WO2003087428A1 Source gas delivery
10/23/2003WO2003087427A2 Laser drilled surfaces for substrate processing chambers
10/23/2003WO2003086960A1 Microfluidic devices with new inner surfaces
10/23/2003WO2003086878A1 System and method for forming dlc film on inner surface of plastic container
10/23/2003WO2003086615A1 Submerged plasma generator, method of generating plasma in liquid and method of decomposing toxic substance with plasma in liquid
10/23/2003WO2003043066A3 Layered structures
10/23/2003WO2002097157A3 Modified diamond-like carbon (dlc) layer structure
10/23/2003WO2002004691A9 Systems and methods for remote plasma clean
10/23/2003US20030199704 Reacting a Group VA metal trihalide with a reagent selected from an (C1-C10)alkyl lithium compound and a compound RnM1X3-n wherein each R is (C1-C10)alkyl, M1 is a Group IIIA metal, X is halogen, n=1-3 , in an organic solvent
10/23/2003US20030199175 Mixed frequency high temperature nitride cvd process
10/23/2003US20030199146 Insulating layer, semiconductor device and methods for fabricating the same
10/23/2003US20030198910 Susceptor pocket profile to improve process performance
10/23/2003US20030198837 Comprises sapphire substrate with low temperature nucleation layer as buffer; polarization-induced electric fields have minimal effects
10/23/2003US20030198817 Oxidation of organosilicon compound under radio frequency power source; multilayer; liquid crystals between glass substrates
10/23/2003US20030198755 Scanning ion beams; filling aperture; process control
10/23/2003US20030198754 Cylinder enclosure with covering; vapor deposition of alumina
10/23/2003US20030198743 Vapor deposition; process control
10/23/2003US20030198742 Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
10/23/2003US20030198741 Film-forming apparatus and film-forming method
10/23/2003US20030198740 Apparatus and method for evenly flowing processing gas onto a semiconductor wafer
10/23/2003US20030198587 Using tungsten carbonyl compound in vapor phase
10/23/2003US20030198578 Multi-stage-heating thermal reactor for transport polymerization
1 ... 467 468 469 470 471 472 473 474 475 476 477 478 479 480 481 482 483 484 485 486 487 ... 719