Patents
Sitemap › C23 - Coating metallic material; Coating material with metallic material; Chemical surface treatment; Diffusion treatment of metallic material; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general; Inhibiting corrosion of metallic material or incrustation in general › C23C - Coating metallic material; Coating material with metallic material; Surface treatment of metallic material by diffusion into the surface, by chemical conversion or substitution; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general › C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes
Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
11/2003
11/06/2003US20030207547 Silicon deposition process in resistively heated single wafer chamber
11/06/2003US20030207524 Method for forming a semiconductor
11/06/2003US20030207522 Wafer processing apparatus and wafer processing method using the same
11/06/2003US20030207473 Method of forming ferroelectric thin films on a high-k layer
11/06/2003US20030207472 Method for controlling deposition of dielectric films
11/06/2003US20030207470 Metal insulator semiconductor structure with polarization-compatible buffer layer
11/06/2003US20030207134 Improving the electrical conductivity of a substrate of metal, metal alloy or metal oxide comprising depositing a small or minor amount of metal or metals from Group VIIIA metals (Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt) or from Group IA metals and
11/06/2003US20030207115 Plastic container coated with carbon film
11/06/2003US20030207097 Multilayer structure used especially as a material of high relative permittivity
11/06/2003US20030207093 Transparent conductive layer forming method, transparent conductive layer formed by the method, and material comprising the layer
11/06/2003US20030207058 Plastic container having a carbon-treated internal surface
11/06/2003US20030207042 A coating material is deposited on a substrate by vacuum or low- pressure pulsed detonation coating. A detonation chamber receives a detonable mixture containing a coating precursor. The detonable mixture is ignited to produce detonation
11/06/2003US20030207033 Method and apparatus for deposition of low dielectric constant materials
11/06/2003US20030207032 Electronic and computer products, are generally built layer by layer on a silicon substrate. One common layer-formation technique, known as chemical-vapor deposition (CVD), produces uneven layers and covers vertical surfaces poorly. An emergent
11/06/2003US20030207030 Easily loaded and unloaded getter device for reducing evacuation time and contamination in a vacuum chamber and method for use of same
11/06/2003US20030207021 Deposited-film formation apparatus, deposited-film formation process, vacuum system, leak judgment method, and computer-readable recording medium with recorded leak-judgment- executable program
11/06/2003US20030206574 Temperature measuring method and apparatus in semiconductor processing apparatus, and semiconductor processing method and apparatus
11/06/2003US20030205823 Method for improving nucleation and adhesion of CVD and ALD films deposited onto low-dielectric-constant dielectrics
11/06/2003US20030205744 TaON glue layer over a semiconductor substrate, and a lower electrode on the TaON glue layer; ferroelectric film on the lower electrode, and an upper electrode is on the film
11/06/2003US20030205724 Device comprising substrate, film on substrate consisting essentially of pb3geo5 phase lead germanium oxide, and conductive electrode overlaying film
11/06/2003US20030205711 N-type nitride semiconductor laminate and semiconductor device using same
11/06/2003US20030205553 Process for treating solid surface and substrate surface
11/06/2003US20030205329 Semiconductor wafer support lift-pin assembly
11/06/2003US20030205328 Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system
11/06/2003US20030205327 Apparatus and methods for minimizing arcing in a plasma processing chamber
11/06/2003US20030205326 Semiconductor processing apparatus and a diagnosis method therefor
11/06/2003US20030205324 Wafer holder with stiffening rib
11/06/2003US20030205251 Cleaning of semiconductor processing chambers
11/06/2003US20030205237 Method of cleaning processing chamber of semiconductor processing apparatus
11/06/2003US20030205203 Method and installation for densifying porous substrates by chemical vapour infiltration
11/06/2003US20030205202 Plasma cvd device
11/06/2003US20030205199 Method and apparatus for non-contact, in-situ temperature measurement of a substrate film during chemical vapor deposition of the substrate film
11/06/2003US20030205194 Process for manufacturing a semiconductor device
11/06/2003US20030205192 Film forming method
11/06/2003US20030205168 Chemical vapor deposition method and related material
11/05/2003EP1359611A1 Method and device for plasma cvd
11/05/2003EP1359610A1 Substrate heating device and method of purging the device
11/05/2003EP1358368A1 Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
11/05/2003EP1358364A2 Method and device for the metered delivery of low volumetric flows
11/05/2003EP1358363A2 Diamond coatings on reactor wall and method of manufacturing thereof
11/05/2003EP1198611B9 Device for treating a container with microwave plasma
11/05/2003EP0806126B1 Method and apparatus for generating plasma
11/05/2003CN1454394A Multiphase low dielectric constant material and method of deposition
11/05/2003CN1454391A Method for predicting consumption of consumable part, method for predicting deposited-film thickness, and plasma processor
11/05/2003CN1453833A Silicon nitride film producing method and apparatus for producing silicon nitride film
11/05/2003CN1453832A Gas phase growth method of oxidative dielectric thin film
11/05/2003CN1453095A Ceramic base
11/05/2003CN1126991C Photosensitive member, process for its production image, forming apparatus having photosensitive member and image forming process
11/05/2003CN1126659C Improved hard alloy body for working steel materials
11/04/2003US6643014 Method and a system for identifying gaseous effluents, and a facility provided with such a system
11/04/2003US6642567 Devices containing zirconium-platinum-containing materials and methods for preparing such materials and devices
11/04/2003US6642484 Glass, ceramic plate with recesses; high temperature infrared radiators
11/04/2003US6642401 β-diketonatocopper(I) complex containing allene compounds as ligand and process for producing the same
11/04/2003US6642157 Film forming method and semiconductor device
11/04/2003US6642091 Thin-film semiconductor device and apparatus for fabricating thin-film semiconductor device
11/04/2003US6642066 Integrated process for depositing layer of high-K dielectric with in-situ control of K value and thickness of high-K dielectric layer
11/04/2003US6641937 Transparent conductive film and process for producing the film
11/04/2003US6641867 Methods for chemical vapor deposition of tungsten on silicon or dielectric
11/04/2003US6641863 Forming by vapor deposition thin film made of the inorganic solid electrolyte on base member being heated so that thin film is allowed to have an ionic conductance higher than that of thin film formed on base member without being heated
11/04/2003US6641767 Methods for replication, replicated articles, and replication tools
11/04/2003US6641698 Integrated circuit fabrication dual plasma process with separate introduction of different gases into gas flow
11/04/2003US6641697 Erosion resistant member that may be used in the processing of a substrate in a plasma of a processing gas
11/04/2003US6641673 Fluid injector for and method of prolonged delivery and distribution of reagents into plasma
11/04/2003US6641672 Replaceable shielding apparatus
11/04/2003US6641302 Thermal process apparatus for a semiconductor substrate
11/04/2003US6640840 Delivery of liquid precursors to semiconductor processing reactors
11/04/2003CA2295180C Gas injection disc assembly for cvd applications
10/2003
10/30/2003WO2003090263A1 Silicon parts for plasma reaction chambers
10/30/2003WO2003089696A1 Dislocation reduction in non-polar gallium nitride thin films
10/30/2003WO2003089695A1 Non-polar a-plane gallium nitride thin films grown by metalorganic chemical vapor deposition
10/30/2003WO2003089694A1 NON-POLAR (A1,B,In,Ga) QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES
10/30/2003WO2003089684A2 Method and device for depositing thin layers on a substrate in a height-adjustable process chamber
10/30/2003WO2003089683A1 Apparatus and method for depositing thin film on wafer using remote plasma
10/30/2003WO2003089682A1 System for depositing a film onto a substrate using a low vapor pressure gas precursor
10/30/2003WO2003089681A2 Mixed frequency high temperature nitride cvd process
10/30/2003WO2003089680A2 Process modules for transport polymerization of low dieletric constant thin films
10/30/2003WO2003089679A1 Process of masking cooling holes of a gas turbine component
10/30/2003WO2003089184A1 Thermal flux processing by scanning electromagnetic radiation
10/30/2003WO2003065132A3 Method and apparatus for process monitoring and control
10/30/2003WO2003054911A3 Plasma process apparatus
10/30/2003WO2003044839A3 Formation of high-mobility silicon-germanium structures by low-energy plasma enhanced chemical vapor deposition
10/30/2003WO2003016961A3 Optical materials and optical devices
10/30/2003WO2003009360A3 Method and apparatus for depositing tungsten after surface treatment to improve film characteristics
10/30/2003WO2002065517A3 Deposition method over mixed substrates using trisilane
10/30/2003WO2002043115A8 Surface preparation prior to deposition
10/30/2003US20030203655 Method of forming interlayer insulating film
10/30/2003US20030203654 Method for improving thickness uniformity of deposited ozone-teos silicate glass layers
10/30/2003US20030203652 Method for forming a carbon doped oxide low-k insulating layer
10/30/2003US20030203646 Process for manufacturing semiconductor integrated circuit device including treatment of gas used in the process
10/30/2003US20030203641 Plasma treatment apparatus and method of producing semiconductor device using the apparatus
10/30/2003US20030203637 Method for high aspect ratio HDP CVD gapfill
10/30/2003US20030203626 Apparatus and method for forming thin layers of materials on micro-device workpieces
10/30/2003US20030203616 Atomic layer deposition of tungsten barrier layers using tungsten carbonyls and boranes for copper metallization
10/30/2003US20030203513 Chemical vapor deposition process for fabricating layered superlattice materials
10/30/2003US20030203143 Plastic container coated with carbon film
10/30/2003US20030203139 Free-standing and aligned carbon nanotubes and synthesis thereof
10/30/2003US20030203126 Organometal complex and method of depositing a metal silicate thin layer using same
10/30/2003US20030203125 Plasma treatment method and method of manufacturing optical parts using the same
10/30/2003US20030203124 Heating substrate within chamber with gas flow via forced convection; chemical vapor deposition; for production of integrated circuits, solar cells
10/30/2003US20030203123 Plasma enhanced chemical vapor deposition (PECVD)
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