Patents
Sitemap › C23 - Coating metallic material; Coating material with metallic material; Chemical surface treatment; Diffusion treatment of metallic material; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general; Inhibiting corrosion of metallic material or incrustation in general › C23C - Coating metallic material; Coating material with metallic material; Surface treatment of metallic material by diffusion into the surface, by chemical conversion or substitution; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general › C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes
Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
11/2003
11/26/2003EP1363859A1 Apparatus and method for atmospheric pressure reactive atom plasma processing for shaping of damage free surfaces
11/26/2003EP1363745A2 Atomizer
11/26/2003EP1118880B1 Method of organic film deposition
11/26/2003CN2587886Y Apparatus for preparing nano ceramic film on surface of work piece
11/26/2003CN2587885Y Horizontal multi-layer ceramic film vapour deposition apparatus
11/26/2003CN1459126A Method for forming dielectric film
11/26/2003CN1458669A Gasifier and gasifying supply device
11/26/2003CN1458668A Batched atom layer depositing device
11/26/2003CN1458298A Method for preparing film by liquid phase source atomizing and microwave plasma chemical gaseous deposition
11/26/2003CN1458129A Method for oriented growth of diamond film on aluminium oxide ceramic
11/26/2003CN1457950A Cutting blade with coating
11/26/2003CN1129349C Zone heating system with feedback control
11/26/2003CN1129168C Process for preparing carbon nano tube film cathode by forming catalyst particles
11/26/2003CN1129037C Light-receiving member, image forming apparatus and image forming method
11/25/2003US6653792 Ion implanting system
11/25/2003US6653791 Method and apparatus for producing uniform process rates
11/25/2003US6653788 Magnetron having a lowered oscillation frequency and processing equipment employing the same
11/25/2003US6653719 Controlling gas flow; plasma polymerization
11/25/2003US6653384 Water-soluble acrylic acid-based polymer, metal nitrate, hydrofluoroic acid-based compound and organic reducing agent; corrosion resistance
11/25/2003US6653247 Dielectric layer for a semiconductor device and method of producing the same
11/25/2003US6653246 High dielectric constant materials
11/25/2003US6653222 Plasma enhanced liner
11/25/2003US6653212 Method and apparatus for thin-film deposition, and method of manufacturing thin-film semiconductor device
11/25/2003US6653197 Method for fabricating capacitor of semiconductor device
11/25/2003US6653185 Method of providing trench walls by using two-step etching processes
11/25/2003US6652969 Carbon film method for formation thereof and article covered with carbon film and method for preparation thereof
11/25/2003US6652924 Sequential chemical vapor deposition
11/25/2003US6652913 Method of forming a coated body having a nanocrystalline CVD coating of Ti(C,N,O)
11/25/2003US6652655 Method to isolate multi zone heater from atmosphere
11/25/2003US6652650 Modified susceptor for use in chemical vapor deposition process
11/25/2003US6652069 Method of surface treatment, device of surface treatment, and head for use in ink jet printer
11/25/2003US6651582 Method and device for irradiating an ion beam, and related method and device thereof
11/25/2003CA2119852C Process and apparatus for continuously coating a moving metallic material with a composition gradient polymer deposit, and product obtained by said process
11/21/2003CA2428949A1 Tibn-coating
11/20/2003WO2003096765A2 Apparatus and methods for minimizing arcing in a plasma processing chamber
11/20/2003WO2003096411A1 A method for forming conformal nitrified tantalum silicide films by thermal cvd followed by nitridation
11/20/2003WO2003096400A1 Plasma processing equipment and plasma processing method
11/20/2003WO2003096396A1 Process and system for heating semiconductor substrates in a processing chamber containing a susceptor
11/20/2003WO2003095702A2 Method for curing low dielectric constant film by electron beam
11/20/2003WO2003095701A1 Volatile copper(ii) complexes for deposition of copper films by atomic layer deposition
11/20/2003WO2003095700A1 Method for high purity purification of high functional material and method for deposition of high functional material by mass separation method
11/20/2003WO2003095695A2 Sputter coating apparatus including ion beam source(s), and corresponding method
11/20/2003WO2003095239A1 In-situ thermal chamber cleaning
11/20/2003WO2003058644A3 Superhard dielectric compounds and methods of preparation
11/20/2003WO2003041124A3 Method of fabricating a gate stack at low temperature
11/20/2003WO2003012840A3 Method and device for the production of thin epiatctic semiconductor layers
11/20/2003WO2002064853A3 Thin films and methods of making them using trisilane
11/20/2003US20030216054 Method of manufacturing semiconductor device
11/20/2003US20030216041 In-situ thermal chamber cleaning
11/20/2003US20030216027 Method of forming insulating layer in semiconductor device
11/20/2003US20030216006 Method of improving HDP fill process
11/20/2003US20030215996 Process for producing oxide thin films
11/20/2003US20030215995 Chemical vapor deposition of silicate high dielectric constant materials
11/20/2003US20030215994 Method for forming ruthenium film of a semiconductor device
11/20/2003US20030215970 Deposition method of insulating layers having low dielectric constant of semiconductor device
11/20/2003US20030215963 Plasma etch resistant coating and process
11/20/2003US20030215652 Transmission barrier layer for polymers and containers
11/20/2003US20030215643 Plasma-resistant articles and production method thereof
11/20/2003US20030215570 Nitriding with each pulse of the silicon precursor and the nitrogen precursor at a time cycle between about 0.01 seconds and about 2.0 seconds
11/20/2003US20030215569 Chemical vapor deposition apparatus and deposition method
11/20/2003US20030214044 Sandwich composite dielectric layer yielding improved integrated circuit device reliability
11/20/2003US20030213966 Deposition method of insulating layers having low dielectric constant of semiconductor device, a thin film transistor substrate using the same and a method of manufacturing the same
11/20/2003US20030213800 High-power microwave window
11/20/2003US20030213793 Wafer chuck having thermal plate with interleaved heating and cooling elements, interchangeable top surface assemblies and hard coated layer surfaces
11/20/2003US20030213562 High density plasma CVD chamber
11/20/2003US20030213560 Tandem wafer processing system and process
11/20/2003US20030213436 Batch type atomic layer deposition apparatus
11/20/2003US20030213435 Vertical type semiconductor device producing apparatus
11/20/2003US20030213434 Upper chamber for high density plasma CVD
11/20/2003US20030213433 Incorporation of an impurity into a thin film
11/19/2003EP1363320A1 Ferroelectric thin film, metal thin film or oxide thin film, and method and apparatus for preparation thereof, and electric or electronic device using said thin film
11/19/2003EP1363316A2 Ceramic susceptor
11/19/2003EP1362931A1 Method and apparatus for fabrication of a DLC layer system
11/19/2003EP0980445B1 Processing insert, and production of same
11/19/2003EP0938596B1 Apparatus for reducing polymer deposition on substrate support
11/19/2003CN1457509A Method for depositing selected thickness of interlevel dielectric material to achieve optimum global planarity on semiconductor wafer
11/19/2003CN1457374A Method of forming silicon thin film and silicon thin film solar cell
11/19/2003CN1456704A Method for on-the-spot determining membrane thickness
11/19/2003CN1456703A Reinforced alumina layer produced by chemical gas-phase precipitinogen
11/19/2003CN1456702A Implement grade nano silicon film and its preparation
11/19/2003CN1456498A Synthesis of double walled carbon nano-tubes
11/19/2003CN1128465C Method for forming conductive layer using atomic layer deposition process
11/18/2003WO2005049226A1 Method and device for continuous treatment of the surface of an elongate object
11/18/2003US6649732 Aliphatic polyester film and gas barrier film
11/18/2003US6649559 For separation of hydrogen from reformate gas for supplying fuel cells with fuel gas
11/18/2003US6649545 Photo-assisted remote plasma apparatus and method
11/18/2003US6649543 Methods of forming silicon nitride, methods of forming transistor devices, and transistor devices
11/18/2003US6649541 Method for preventing or reducing delamination of deposited insulating layers
11/18/2003US6649540 Applying on semiconductor or integrated circuit surface substituted organosilane compound precursor, wherein precursor reacts with and deposits on surface and dielectric film
11/18/2003US6649502 Methods of forming multilayer dielectric regions using varied deposition parameters
11/18/2003US6649496 Production method for semiconductor crystal
11/18/2003US6649495 Manufacturing method of semiconductor device
11/18/2003US6649493 Method for fabricating a III nitride film, and underlayer for fabricating a III nitride film and a method for fabricating the same underlayer
11/18/2003US6649413 Synthesis and screening combinatorial arrays of zeolites
11/18/2003US6649287 Transistor, few or no cracks
11/18/2003US6649278 Process for fabricating films of uniform properties on semiconductor devices
11/18/2003US6649224 Method for applying a coating to a substrate
11/18/2003US6649223 Non-conductive hollow substrate material inside of which a plasma is generated from a process gas by producing a magnetic field perpendicular to a driection of a substrate depth
11/18/2003US6649222 Modulated plasma glow discharge treatments for making superhydrophobic substrates
11/18/2003US6649219 Reacting one or more organofluorosilanes with an oxidizing agent
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