Patents
Sitemap › C23 - Coating metallic material; Coating material with metallic material; Chemical surface treatment; Diffusion treatment of metallic material; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general; Inhibiting corrosion of metallic material or incrustation in general › C23C - Coating metallic material; Coating material with metallic material; Surface treatment of metallic material by diffusion into the surface, by chemical conversion or substitution; Coating by vacuum evaporation, by sputtering, by ion implantation or by chemical vapour deposition, in general › C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes
Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
12/2003
12/04/2003US20030224578 Selective deposition of a barrier layer on a dielectric material
12/04/2003US20030224218 Group 3 metal oxide and group 5 element
12/04/2003US20030224217 Metal nitride formation
12/04/2003US20030224188 Clean aluminum alloy for semiconductor processing equipment
12/04/2003US20030224107 Atomic layer deposition; replacing mechanical valves with an improved precursor dosing system.
12/04/2003US20030222360 High throughput vaporizer
12/04/2003US20030222015 Hydrogen-selective silica-based membrane
12/04/2003US20030221950 A plasma polymerizing system including at least one chamber is disclosed. After polymerizing a surface of a sheet by generating plasma of reactive gas in the chamber, mixed gas of oxygen and nitrogen is provided into the chamber for
12/04/2003US20030221780 Clamshell and small volume chamber with fixed substrate support
12/04/2003US20030221779 Substrate processing apparatus
12/04/2003US20030221708 Method of cleaning a semiconductor process chamber
12/04/2003US20030221625 Vaporizer for MOCVD and method of vaporizing raw material solutions for MOCVD
12/04/2003US20030221624 CVD coating device
12/04/2003US20030221623 Fabricating a semiconductor device
12/04/2003US20030221621 Method and apparatus for processing semiconductor substrates with hydroxyl radicals
12/04/2003US20030221617 Gas heating apparatus for chemical vapor deposition process and semiconductor device fabrication method using same
12/04/2003US20030221616 Magnetically-actuatable throttle valve
12/04/2003US20030221611 Fabrication method of semiconductor device and semiconductor device
12/04/2003CA2486590A1 Process of masking cooling holes of a gas turbine component
12/04/2003CA2484844A1 Multistation coating device and method for plasma coating
12/04/2003CA2484824A1 Coating device comprising a conveying device
12/04/2003CA2484023A1 Device and method for treating workpieces
12/03/2003EP1367145A1 CVD apparatus
12/03/2003EP1366647A1 Apparatus for generating low temperature plasma at atmospheric pressure
12/03/2003EP1366508A2 Apparatus and method for atmospheric pressure reactive atom plasma processing for surface modification
12/03/2003EP1366208A1 Method for producing parts and a vacuum processing system
12/03/2003EP1366207A1 Plating method of metal film on the surface of polymer
12/03/2003EP1366000A2 Photo-induced hydrophilic article and method of making same
12/03/2003EP1138055B1 Semiconductor processing equipment having tiled ceramic liner
12/03/2003CN1460289A Plasma processing device and semiconductor mfg. device
12/03/2003CN1460288A Device and method for plasma processing and slow-wave plate
12/03/2003CN1460287A 等离子体处理装置 Plasma processing apparatus
12/03/2003CN1460130A System and method for depositing inorganic/organic dielectric films
12/03/2003CN1459835A Upper pipe treating apparatus applied for silicon oxide layer homogenization technology
12/03/2003CN1459832A Manufacturing method of dielectric layer
12/03/2003CN1129487C Pre-cleaning process of Nd-Fe-B permanent magnet surface to be coated with anticorrosive p-xylene polymer layer
12/02/2003US6657395 Close coupled match structure for RF drive electrode
12/02/2003US6657151 Plasma processing device
12/02/2003US6656855 Deposition method of dielectric films having a low dielectric constant
12/02/2003US6656854 Method of forming a low dielectric constant film with tetramethylcyclotetrasiloxane (TMCTS) and LPCVD technique
12/02/2003US6656853 Enhanced deposition control in fabricating devices in a semiconductor wafer
12/02/2003US6656839 Solutions of metal-comprising materials, and methods of making solutions of metal-comprising materials
12/02/2003US6656838 Process for producing semiconductor and apparatus for production
12/02/2003US6656835 Introducing a rhodium group metal precursor into said reactor chamber to deposit a rhodium monolayer on said substrate; and introducing oxygen into said deposition region to remove carbon from said rhodium monolayer.
12/02/2003US6656831 Plasma-enhanced chemical vapor deposition of a metal nitride layer
12/02/2003US6656788 Method for manufacturing a capacitor for semiconductor devices
12/02/2003US6656592 Carbon film and method of forming the same
12/02/2003US6656591 Diamond-coated body including interface layer interposed between substrate and diamond coating, and method of manufacturing the same
12/02/2003US6656540 Plasma-excited vapor phase growth process, especially using copper and chlorine or hydrogen chloride
12/02/2003US6656539 Irradiating donor compound suspended in carrier gas to photochemically decompose at specified intensity insufficient to cause photolytic breakdown of molecules of donor compound
12/02/2003US6656537 Plasma enhanced chemical deposition with low vapor pressure compounds
12/02/2003US6656444 Plasma deposition of hydrogen and methane
12/02/2003US6656376 Process for cleaning CVD units
12/02/2003US6656322 Plasma processing apparatus
12/02/2003US6656286 Pedestal with a thermally controlled platen
12/02/2003US6656284 Semiconductor device manufacturing apparatus having rotatable gas injector and thin film deposition method using the same
12/02/2003US6656283 Channelled chamber surface for a semiconductor substrate processing chamber
12/02/2003US6656282 Atomic layer deposition apparatus and process using remote plasma
12/02/2003US6656255 Hexafluoroacetylacetonato copper complex with a vinylsilane or a compound with carbon-carbon multiple bond whose p-electrons participate in coordination with the monovalent copper; controlling the amount of water added
12/02/2003US6656233 Having thin films of lithium and a sulfide-based inorganic solid electrolyte; produced without degradation by air
11/2003
11/27/2003WO2003098678A1 Method of treating substrate
11/27/2003WO2003098672A1 Deposition method of insulating layers having low dielectric constant of semiconductor device
11/27/2003WO2003097898A1 Method for introducing gas to treating apparatus having shower head portion
11/27/2003WO2003097897A1 Vapor deposition method of low dielectric insulating film, thin film transistor using the same and preparation method thereof
11/27/2003WO2003097891A2 High-power microwave window
11/27/2003WO2003097651A1 Method of depositing copper on a support
11/27/2003WO2003097532A1 Process for manufacturing a gallium rich gallium nitride film
11/27/2003WO2003097245A2 Atomisation of a precursor into an excitation medium for coating a remote substrate
11/27/2003WO2003067635A3 Reactor assembly and processing method
11/27/2003WO2003025243A3 Metal nitride deposition by ald using gettering reactant
11/27/2003US20030219996 Method of forming a sealing layer on a copper pattern
11/27/2003US20030219985 Method of manufacturing amorphous metal oxide film and methods of manufacturing capacitance element having amorphous metal oxide film and semiconductor device
11/27/2003US20030219981 Process and apparatus for epitaxially coating a semiconductor wafer and epitaxially coated semiconductor wafer
11/27/2003US20030219979 Methods and apparatus for forming a metal layer on an integrated circuit device using a tantalum precursor
11/27/2003US20030219942 Methods of forming capacitors and integrated circuit devices including tantalum nitride
11/27/2003US20030219906 Formation of combinatorial arrays of materials using solution-based methodologies
11/27/2003US20030219634 Aluminum, gallium or indium nitride undercoatings on surfaces of sapphire single crystal substrates, used in semiconductors having light emitting diodes or high speed integrated circuit chips
11/27/2003US20030219632 Electrical and electronic apparatus comprising substrates having oxygen and water vapor impervious multilayers
11/27/2003US20030219601 Electrostatic-erasing abrasion-proof coating and method for forming the same
11/27/2003US20030219547 CVD treatment device
11/27/2003US20030219546 Precleaning chamber by applying helium plasma treatment to chamber; depositing carbon doped oxide film in chamber; semiconductors
11/27/2003US20030219540 Pre-polycoating of glass substrates
11/27/2003US20030219536 Residual gases are purged out by air flow including water to remove fumes; semiconductors; integrated circuits
11/27/2003US20030219528 Comprises purge gases; for thin film deposition
11/27/2003US20030218224 Carbon nanotube sensor and method of producing the same
11/27/2003US20030217698 Plasma chemical vapor deposition apparatus
11/27/2003US20030217697 Liquid material evaporation supply apparatus
11/27/2003US20030217696 Device for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates
11/27/2003US20030217527 Device for holding and vacuum-sealing a container having an opening
11/27/2003CA2486178A1 Process for manufacturing a gallium rich gallium nitride film
11/26/2003EP1365458A1 Barrier layer for an article and method of making said barrier layer by expanding thermal plasma
11/26/2003EP1365047A1 Diamond film and method for producing the same
11/26/2003EP1365045A1 TiBN coating
11/26/2003EP1365043A1 CVD apparatus
11/26/2003EP1365042A1 Method for passivating a semiconductor substrate
11/26/2003EP1365041A1 Purgeable manifold
11/26/2003EP1365039A1 Process of masking colling holes of a gas turbine component
11/26/2003EP1364384A2 Device and method for discharging dielectric surfaces
11/26/2003EP1364076A1 Device and method for supplying a cvd reactor with a liquid starting material entering into a gaseous phase
11/26/2003EP1364075A1 Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof
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