Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
12/2003
12/11/2003WO2003023093A3 Susceptor with epitaxial growth control devices and epitaxial reactor using the same
12/11/2003WO2002073329A3 Valve control system for atomic layer deposition chamber
12/11/2003US20030228989 Method of recycling fluorine using an adsorption purification process
12/11/2003US20030228770 Method of forming a thin film with a low hydrogen content on a semiconductor device
12/11/2003US20030228751 Oxygen based cleaning operation liberates fluorine from the fluorine containing polymer layer to remove a silicon based residue. an apparatus configured to remove chamber deposits between process operations is also provided.
12/11/2003US20030228710 Multilayer dielectric tunnel barrier used in magnetic tunnel junction devices, and its method of fabrication
12/11/2003US20030228510 Separator of a fuel cell and a manufacturing method thereof
12/11/2003US20030228500 Electronic and optical materials
12/11/2003US20030228416 Plasma vapor deposition; supplying gas; high frequency voltage
12/11/2003US20030228415 Coating formation by reactive deposition
12/11/2003US20030228413 Surface treatment method and optical part
12/11/2003US20030227170 Pre-expanded connector for expandable downhole tubulars
12/11/2003US20030227082 Silicon-based thin film forming apparatus, silicon-based thin film forming method and semiconductor element
12/11/2003US20030227033 Atomic layer-deposited HfA1O3 films for gate dielectrics
12/11/2003US20030227015 Vertical nano-size transistor using carbon nanotubes and manufacturing method thereof
12/11/2003US20030226834 Laser annealer and laser thin-film forming apparatus
12/11/2003US20030226505 vaporizer valve that forms a mixture a carrier gas and a pressurized liquid; by controlling the diaphragm position with a feedback control circuit responsive to a liquid flow rate monitor, the liquid flow rate may be controlled independently of the carrier gas flow rate.
12/11/2003US20030226503 Comprises evaporating film, ionizing the film with radio frequency power, then depositing on substrate as bias voltage incorporates halogen ions into the film
12/11/2003US20030226502 Chemical vapor deposition (CVD) method and calibration apparatus providing enhanced uniformity
12/11/2003US20030226366 Double acting cold trap
12/11/2003DE20220591U1 Process for depositing material from supply vessel comprises positioning the substrate and supply material in stack, introducing inert gas and reaction gas, expanding the gas flows, stopping the deposition, and cooling the substrate
12/10/2003EP1369942A2 Separator of a fuel cell and a manufacturing method thereof
12/10/2003EP1369941A2 Low-contact-resistance interface structure between separator and carbon material for fuel cell, separator and carbon material used therein, and production method
12/10/2003EP1369903A2 Liquid vaporizing and gas feeding apparatus
12/10/2003EP1368822A2 Rhodium-rich oxygen barriers
12/10/2003EP1368506A1 Method for the production of a functional coating by means of a high-frequency icp plasma beam source
12/10/2003EP1368505A1 A ccvd method for producing tubular carbon nanofibers
12/10/2003EP1368131A2 Protective cage for coating of medical devices
12/10/2003EP1165855B1 Method for treating polymer surface
12/10/2003CN1461494A 等离子体处理装置及排气环 Plasma processing apparatus, and an exhaust ring
12/10/2003CN1461275A Gas barrier synthetic resin vessel, device for producing the same, and article-received gas-barrier synthetic resin vessel
12/10/2003CN1460729A Preparation f green light fallium nitride base LED epitaxial wafer by adopting multiquantum well
12/10/2003CN1460662A Method for producing golden ceramic products
12/10/2003CN1460639A Carbon base nano tube, its preparation method and application
12/10/2003CN1460638A Flaky carbon nano tube, preparation method and special equipment
12/10/2003CN1130472C Plasma enhanced chemical deposition method for low vapor pressure compounds
12/10/2003CN1130471C Tunable and removable plasma deposited antireflective coatings
12/10/2003CN1130470C Apparatus and method for depositing semiconductor material
12/10/2003CN1130263C Surface modification of solid supports through thermal decomposition and functionalization of silanes
12/09/2003US6660874 Trialkyl Group VA metal compounds
12/09/2003US6660666 Integrated processing system for forming an insulating layer of thin film transistor liquid crystal display
12/09/2003US6660664 Structure and method for formation of a blocked silicide resistor
12/09/2003US6660663 Computer readable medium for holding a program for performing plasma-assisted CVD of low dielectric constant films formed from organosilane compounds
12/09/2003US6660662 Method of reducing plasma charge damage for plasma processes
12/09/2003US6660660 Methods for making a dielectric stack in an integrated circuit
12/09/2003US6660656 Plasma processes for depositing low dielectric constant films
12/09/2003US6660631 Devices containing platinum-iridium films and methods of preparing such films and devices
12/09/2003US6660628 Method of MOCVD Ti-based barrier metal thin films with tetrakis (methylethylamino) titanium with octane
12/09/2003US6660572 Thin film semiconductor device and method for producing the same
12/09/2003US6660535 Barium strontium titanate, (Sr,Ba)TiO3 (BST) by supplying BST sources into a chamber; and inducing textured growth of the film over the substrate in a uniform desired crystal orientation; metal-organic chemical vapor deposition (MOCVD)
12/09/2003US6660391 Polysilazane having alkyl, phenyl and/or fluoroalkyl groups; high thermal stability; reliable; cost effective
12/09/2003US6660375 Gas phase reaction of tetracyanoetheylene or 7,7,8,8-tetra-cyanoquinodimethane with such as vanadium hexacarbonyl or bis(benzene)vanalium; air stable; applicable to wide variety of rigid or flexible substrates
12/09/2003US6660371 Composite material coating and a method for the production thereof
12/09/2003US6660342 Depositing highly adhesive, uniform films with small power consumption; high density plasma chemical vapor deposition
12/09/2003US6660340 Diamond-like carbon film with enhanced adhesion
12/09/2003US6660331 MOCVD of SBT using toluene-based solvent system for precursor delivery
12/09/2003US6660330 Method for depositing metal films onto substrate surfaces utilizing a chamfered ring support
12/09/2003US6660329 Method for making diamond coated cutting tool
12/09/2003US6660328 Powder precursor delivery system for chemical vapor deposition
12/09/2003US6660177 Apparatus and method for reactive atom plasma processing for material deposition
12/09/2003US6660126 Lid assembly for a processing system to facilitate sequential deposition techniques
12/09/2003US6660101 Supplying predetermined quantity of cleaning gas to container, controlling opening degree of automatic pressure regulating valve in vacuum exhaust system to maintain constant pressure, detecting etching end point by change in degree of opening
12/09/2003US6660097 Single-substrate-processing apparatus for semiconductor process
12/09/2003US6660095 Single wafer LPCVD apparatus
12/09/2003US6660094 Apparatus and method for forming deposited film
12/09/2003US6660093 Inner tube for CVD apparatus
12/09/2003US6660090 Film or coating deposition on a substrate
12/09/2003US6660089 Substrate support mechanism and substrate rotation device
12/09/2003US6659161 Molding process for making diamond tools
12/09/2003US6659111 Removing deposits from interior surfaces of metal apparatus used for forming metal or alloy films, by flowing mixtures of hydrogen fluoride and oxygen, then evacuating with inert gases
12/09/2003US6658895 Carbon nitride coating for optical media discs
12/04/2003WO2003100840A1 Vaporizer, various apparatuses including the same and method of vaporization
12/04/2003WO2003100828A2 Method of depositing an oxide film by chemical vapor deposition
12/04/2003WO2003100817A1 Multi-part electrode for a semiconductor processing plasma reactor and method of replacing a portion of a mutli-part electrode
12/04/2003WO2003100249A1 Methods of handling wind turbine blades and mounting said blades on a wind turbine, system and gripping unit for handling a wind turbine blade
12/04/2003WO2003100129A1 Rotary machine for cvd coatings
12/04/2003WO2003100128A1 Coating device comprising a conveying device
12/04/2003WO2003100127A1 Method and device for the plasma treatment of workpieces
12/04/2003WO2003100126A1 Method and device for the plasma treatment of work pieces
12/04/2003WO2003100125A1 Method and device for plasma treating workpieces
12/04/2003WO2003100124A1 Method and device for plasma treating workpieces
12/04/2003WO2003100123A1 Ceramic thin film on various substrates, and process for producing same
12/04/2003WO2003100122A2 Method and device for plasma treating workpieces
12/04/2003WO2003100121A2 Multistation coating device and method for plasma coating
12/04/2003WO2003100120A2 Device and method for treating workpieces
12/04/2003WO2003100119A1 Method and device for plasma treatment of work pieces
12/04/2003WO2003100118A2 Method and device for treating workpieces
12/04/2003WO2003100117A1 Method and device for plasma treating workpieces
12/04/2003WO2003100116A1 Method and device for plasma treating workpieces
12/04/2003WO2003100115A1 Method and device for plasma treating workpieces
12/04/2003WO2003100108A1 Process of masking cooling holes of a gas turbine component
12/04/2003WO2003099688A1 Method and device for handling workpieces
12/04/2003WO2003069668A3 A method of calibrating and using a semiconductor processing system
12/04/2003WO2003049786A3 Metering valve and pharmaceutical metered dose inhaler and methods thereof
12/04/2003WO2003039195A3 Induction heating devices and methods for controllably heating an article
12/04/2003WO2003009360B1 Method and apparatus for depositing tungsten after surface treatment to improve film characteristics
12/04/2003WO2003008323A3 Lifting and supporting device
12/04/2003US20030224622 Insulation film on semiconductor substrate and method for forming same
12/04/2003US20030224615 Method for manufacturing semiconductor device
12/04/2003US20030224600 Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor