Patents for C23C 16 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (cvd) processes (71,892)
12/2003
12/24/2003CN1131752C Guide tube and method for forming hard carbon film on internal surface of tube
12/24/2003CA2489544A1 Oxide film forming method and oxide film forming apparatus
12/23/2003USRE38358 Cold cathode ion beam deposition apparatus with segregated gas flow
12/23/2003US6667839 Holding device for an optical element made of a crystalline material
12/23/2003US6667553 H:SiOC coated substrates
12/23/2003US6667248 Low-bias-deposited high-density-plasma chemical-vapor-deposition silicate glass layers
12/23/2003US6667240 Method and apparatus for forming deposited film
12/23/2003US6667075 Method for imparting hydrophilicity to substrate
12/23/2003US6667070 Method of in situ monitoring of thickness and composition of deposited films using raman spectroscopy
12/23/2003US6666924 Reaction chamber with decreased wall deposition
12/23/2003US6666923 Plasma polymerizing apparatus having an electrode with a lot of uniform edges
12/23/2003US6666921 Chemical vapor deposition apparatus and chemical vapor deposition method
12/23/2003US6666920 Gas collector for providing an even flow of gasses through a reaction chamber of an epitaxial reactor
12/23/2003US6666916 Apparatus and method for making free standing diamond
12/23/2003US6666288 Inserts consisting of a tungsten carbide based hard metal with iron-nickel binder and a coating exhibits at least as good performance in machining
12/18/2003WO2003105205A1 Hafnium-aluminum oxide dielectric films
12/18/2003WO2003105199A1 Heater module for semiconductor production system
12/18/2003WO2003104704A1 Connector for expandable downhole tubulars
12/18/2003WO2003104525A1 Processing device and processing method
12/18/2003WO2003104524A1 Processing device and processing method
12/18/2003WO2003104523A1 Method and device for cleaning raw material gas introduction tube used in cvd film forming apparatus
12/18/2003WO2003103940A1 Honeycomb-shaped carbon element
12/18/2003WO2003080893B1 Method for coating a substrate and device for carrying out the method
12/18/2003WO2003079405A3 Method for forming thin film layers by simultaneous doping and sintering
12/18/2003WO2003050854A3 Chemical reactor templates: sacrificial layer fabrication and template use
12/18/2003WO2003046252A3 Buffing diamond-like carbon (dlc) to improve scratch resistance
12/18/2003WO2003019622A3 System and method of fast ambient switching for rapid thermal processing
12/18/2003WO2003018866A9 Protective shield and system for gas distribution
12/18/2003US20030232514 Method for forming a thin film using an atomic layer deposition (ALD) process
12/18/2003US20030232511 ALD metal oxide deposition process using direct oxidation
12/18/2003US20030232506 System and method for forming a gate dielectric
12/18/2003US20030232501 Surface pre-treatment for enhancement of nucleation of high dielectric constant materials
12/18/2003US20030232500 Photo-assisted method for semiconductor fabrication
12/18/2003US20030232495 Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices
12/18/2003US20030232214 Vaporizing chromium hexacaronyl then introducing chromium formed into vapor deposition apparatus; comprises chromium metal-/oxide-/nitride-/ and/or carbide- layer
12/18/2003US20030232200 Monolithic optical fibers with light channels extending along the length; integrated circuits
12/18/2003US20030232150 CVD coating device
12/18/2003US20030232142 Volatile copper(II) complexes for deposition of copper films by atomic layer deposition
12/18/2003US20030232138 System for controlling the sublimation of reactants
12/18/2003US20030232137 Introducing into the vacuum chamber gaseous reagent precursors selected from an organosilane and organosilxoane, and a porogen, heating to deposit a film containing pyrogen, removing porogen to form a porous film with low dielectric
12/18/2003US20030232136 Layer formation method, and substrate with a layer formed by the method
12/18/2003US20030230793 Support for microelectronic, microoptoelectronic or micromechanical devices
12/18/2003US20030230782 Vertical nano-size transistor using carbon nanotubes and manufacturing method thereof
12/18/2003US20030230760 Vertical nano-size transistor using carbon nanotubes and manufacturing method thereof
12/18/2003US20030230386 Magnetic neutral line discharge plasma processing system
12/18/2003US20030230322 Method and apparatus for controlling the movement of CVD reaction byproduct gases to adjacent process chambers
12/18/2003US20030230239 Gas flow division in a wafer processing system having multiple chambers
12/18/2003US20030230235 Dislocation reduction in non-polar gallium nitride thin films
12/18/2003US20030230232 Method of making enhanced CVD diamond
12/18/2003US20030230138 Method and device for in situ layer thickness determination
12/17/2003EP1372160A1 Dielectric constant enhancement of HfO2 comprising compositions
12/17/2003EP1371752A2 Layer formation method, and substrate with a layer formed by the method
12/17/2003EP1371751A1 Film forming device
12/17/2003EP1371750A1 Method of recycling fluorine using an adsorption purification process
12/17/2003EP1371271A1 Plasma installation and method for producing a functional coating
12/17/2003EP1371087A1 A device for epitaxially growing objects by cvd
12/17/2003EP1370709A1 A chemical vapor deposition process and apparatus thereof
12/17/2003EP1370707A1 Chemical vapour infiltration method for densifying porous substrates having a central passage
12/17/2003EP1161574B1 Method and apparatus for arc deposition
12/17/2003CN1462061A Pyrolytic boron nitride coating layer base plate
12/17/2003CN1461821A Process and equipment for coating silicon carblde on carbon fiber surface
12/17/2003CN1461817A Clean aluminium alloy for semiconductor processing equipment
12/17/2003CN1131441C Coatings, methods and apparatus for reducing reflction from optical substrates
12/17/2003CN1131183C Photocatalytic-activated self-cleaning article and method of making the same
12/16/2003US6664636 Cu film deposition equipment of semiconductor device
12/16/2003US6664577 Semiconductor device includes gate insulating film having a high dielectric constant
12/16/2003US6664496 Plasma processing system
12/16/2003US6664202 Mixed frequency high temperature nitride CVD process
12/16/2003US6664192 Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
12/16/2003US6664186 Method of film deposition, and fabrication of structures
12/16/2003US6664160 Gate structure with high K dielectric
12/16/2003US6664119 Chemical vapor deposition method for manufacturing semiconductor devices
12/16/2003US6664116 Seed layer processes for MOCVD of ferroelectric thin films on high-k gate oxides
12/16/2003US6664115 Metal insulator structure with polarization-compatible buffer layer
12/16/2003US6663973 Polysiloxane with a fluoroaromatic silanediol monomer
12/16/2003US6663792 Equipment for UV wafer heating and photochemistry
12/16/2003US6663755 Filtered cathodic arc deposition method and apparatus
12/16/2003US6663753 Method of making coated article including DLC inclusive layer over low-E coating
12/16/2003US6663748 Method of forming a thin film
12/16/2003US6663716 Film processing system
12/16/2003US6663715 Plasma CVD apparatus for large area CVD film
12/16/2003US6663714 CVD apparatus
12/16/2003US6663713 Method and apparatus for forming a thin polymer layer on an integrated circuit structure
12/16/2003US6663706 Raw material compounds for use in CVD, and chemical vapor deposition for producing iridium or iridium compound thin films
12/16/2003US6663025 Reflector is over nozzle arranged to reflect gas while expanding flow; vanes divide and slow velocity; pumping, venting
12/16/2003US6662817 Gas-line system for semiconductor-manufacturing apparatus
12/16/2003CA2162291C Method and apparatus for producing nickel shell molds
12/11/2003WO2003103021A1 Method and apparatus for monitoring film deposition in a process chamber
12/11/2003WO2003103017A2 Method and system of determining chamber seasoning condition by optical emission
12/11/2003WO2003103003A1 Device for production of a plasma sheet
12/11/2003WO2003102266A1 Deposition of copper films
12/11/2003WO2003102265A1 Ald formation of titanium tantalum nitride silicon (tixtaynz(si)) layer
12/11/2003WO2003102264A2 Method for depositing silicon nitride or silicon oxynitride, and corresponding product
12/11/2003WO2003102263A1 Device for manufacturing dlc film-coated plastic container
12/11/2003WO2003101847A1 Dlc film coated plastic container, and device and method for manufacturing the plastic container
12/11/2003WO2003101635A1 Semiconductor device fabrication chamber cleaning method and apparatus with recirculation of cleaning gas
12/11/2003WO2003101593A1 Hydrogen-selective silica-based membrane
12/11/2003WO2003047725A3 Method and installation for treating flue gas containing hydrocarbons
12/11/2003WO2003046248A3 Improved method for coating a support
12/11/2003WO2003028069A3 Method for cyclic cvd